IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Datasheet

IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
60
RDS(on) ()
VGS = 10 V
Qg (Max.) (nC)
0.050
46
Qgs (nC)
11
Qgd (nC)
22
Configuration
Single
D2PAK
(TO-262)
G
G
D
S
Available
Available
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
D
I2PAK
Advanced process technology
Surface mount
Low-profile through-hole (IRFZ34L, SiHFZ34L)
175 °C operating temperature
Fast switching
Material categorization: for definitions of
compliance
please
see
www.vishay.com/doc?99912
(TO-263)
DESCRIPTION
G
D
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2 W in a typical surface mount application.
The through-hole version (IRFZ34L, SiHFZ34L) is available
for low-profile applications.
S
S
N-Channel MOSFET
ORDERING INFORMATION
D2PAK (TO-263)
D2PAK (TO-263)
Lead (Pb)-free and halogen-free
SiHFZ34S-GE3
SiHFZ34STRL-GE3
SiHFZ34L-GE3
Lead (Pb)-free
IRFZ34SPbF
IRFZ34STRLPbF a
IRFZ34LPbF
Package
I2PAK (TO-262)
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
VDS
VGS
60
± 20
30
21
120
0.59
200
88
3.7
4.5
-55 to +175
300
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Current a, e
Linear Derating Factor
Single Pulse Avalanche Energy b, e
Maximum Power Dissipation
Peak Diode Recovery dV/dt c, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
ID
IDM
EAS
TC = 25 °C
TA = 25 °C
PD
dV/dt
TJ, Tstg
for 10 s
UNIT
V
A
W/°C
mJ
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25 °C, L = 260 μH, Rg = 25 , IAS = 30 A (see fig. 12).
c. ISD  30 A, dI/dt  200 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.
e. Uses IRFZ34, SiHFZ34 data and test conditions.
S15-1659-Rev. D, 20-Jul-15
Document Number: 90368
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient 
(PCB mount) a
PARAMETER
RthJA
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
1.7
UNIT
°C / W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material). 
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
VDS
VGS = 0 V, ID = 250 μA
MIN.
TYP.
MAX.
UNIT
60
-
-
V
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS/TJ
-
0.065
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
-
-
25
VDS = 48 V, VGS = 0 V, TJ = 150 °C
-
-
250
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
Reference to 25 °C, ID = 1 mA
c
ID = 18 A b
VGS = 10 V
VDS = 25 V, ID = 18 A b
μA
-
-
0.05

9.3
-
-
S
-
1200
-
-
600
-
-
100
-
-
-
46
-
-
11
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5c
VGS = 10 V
ID = 30 A, VDS = 48 V,
see fig. 6 and 13 b, c
Gate-Drain Charge
Qgd
-
-
22
Turn-On Delay Time
td(on)
-
13
-
-
100
-
-
29
-
-
52
-
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 30 V, ID = 30 A,
Rg = 12 , RD = 1.0 , see fig. 10 b, c
Fall Time
tf
Internal Source Inductance
LS
Between lead, and center of die contact
-
7.5
-
IS
MOSFET symbol
showing the 
integral reverse
p - n junction diode
-
-
30
-
-
120
pF
nC
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
Body Diode Voltage
ISM
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
D
A
G
TJ = 25 °C, IS = 30 A, VGS = 0
S
Vb
TJ = 25 °C, IF = 30 A, dI/dt = 100 A/μs b, c
-
-
1.6
V
-
120
230
ns
-
700
1400
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Uses IRFZ34, SiHFZ34 data and test conditions.
S15-1659-Rev. D, 20-Jul-15
Document Number: 90368
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
S15-1659-Rev. D, 20-Jul-15
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90368
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
www.vishay.com
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S15-1659-Rev. D, 20-Jul-15
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 90368
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
www.vishay.com
Vishay Siliconix
RD
VDS
VGS
D.U.T.
Rg
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
Rg
D.U.T.
+
-
I AS
V DD
VDS
10 V
tp
0.01 W
Fig. 12a - Unclamped Inductive Test Circuit
S15-1659-Rev. D, 20-Jul-15
IAS
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 90368
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
www.vishay.com
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
S15-1659-Rev. D, 20-Jul-15
Fig. 13b - Gate Charge Test Circuit
Document Number: 90368
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
+
-
-
Rg
•
•
•
•
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel










Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90368.
S15-1659-Rev. D, 20-Jul-15
Document Number: 90368
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
(Datum A)
3
A
4
4
L1
B
A
E
c2
H
Gauge
plane
4
0° to 8°
5
D
B
Detail A
Seating plane
H
1
2
C
3
C
L
L3
L4
Detail “A”
Rotated 90° CW
scale 8:1
L2
B
A1
B
A
2 x b2
c
2xb
E
0.010 M A M B
± 0.004 M B
2xe
Plating
5
b1, b3
Base
metal
c1
(c)
D1
4
5
(b, b2)
Lead tip
MILLIMETERS
DIM.
MIN.
MAX.
View A - A
INCHES
MIN.
4
E1
Section B - B and C - C
Scale: none
MILLIMETERS
MAX.
DIM.
MIN.
INCHES
MAX.
MIN.
MAX.
A
4.06
4.83
0.160
0.190
D1
6.86
-
0.270
-
A1
0.00
0.25
0.000
0.010
E
9.65
10.67
0.380
0.420
6.22
-
0.245
-
b
0.51
0.99
0.020
0.039
E1
b1
0.51
0.89
0.020
0.035
e
b2
1.14
1.78
0.045
0.070
H
14.61
15.88
0.575
0.625
b3
1.14
1.73
0.045
0.068
L
1.78
2.79
0.070
0.110
2.54 BSC
0.100 BSC
c
0.38
0.74
0.015
0.029
L1
-
1.65
-
0.066
c1
0.38
0.58
0.015
0.023
L2
-
1.78
-
0.070
c2
1.14
1.65
0.045
0.065
L3
D
8.38
9.65
0.330
0.380
L4
0.25 BSC
4.78
5.28
0.010 BSC
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
www.vishay.com
1
Package Information
Vishay Siliconix
I2PAK (TO-262) (HIGH VOLTAGE)
A
(Datum A)
E
B
c2
A
E
A
L1
Seating
plane
D1
D
C
L2
C
B
B
L
A
c
3 x b2
E1
A1
3xb
Section A - A
Base
metal
2xe
b1, b3
Plating
0.010 M A M B
c1
c
(b, b2)
Lead tip
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.06
4.83
0.160
0.190
D
8.38
9.65
0.330
0.380
A1
2.03
3.02
0.080
0.119
D1
6.86
-
0.270
-
b
0.51
0.99
0.020
0.039
E
9.65
10.67
0.380
0.420
b1
0.51
0.89
0.020
0.035
E1
6.22
-
0.245
-
b2
1.14
1.78
0.045
0.070
e
b3
1.14
1.73
0.045
0.068
L
13.46
14.10
0.530
0.555
c
0.38
0.74
0.015
0.029
L1
-
1.65
-
0.065
c1
0.38
0.58
0.015
0.023
L2
3.56
3.71
0.140
0.146
c2
1.14
1.65
0.045
0.065
2.54 BSC
0.100 BSC
ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost
extremes of the plastic body.
3. Thermal pad contour optional within dimension E, L1, D1, and E1.
4. Dimension b1 and c1 apply to base metal only.
Document Number: 91367
Revision: 27-Oct-08
www.vishay.com
1
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000