IRF9530S, SiHF9530S www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) -100 RDS(on) () VGS = -10 V 0.30 Qg max. (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S D2PAK • • • • • • • • Surface mount Available in tape and reel Dynamic dV/dt rating Available Repetitive avalanche rated P-channel Available 175 °C operating temperature Fast switching Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. (TO-263) G DESCRIPTION G D S D P-Channel MOSFET Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free D2PAK (TO-263) SiHF9530S-GE3 IRF9530SPbF SiHF9530S-E3 D2PAK (TO-263) SiHF9530STRL-GE3 a IRF9530STRLPbF a SiHF9530STL-E3 a D2PAK (TO-263) SiHF9530STRR-GE3 a IRF9530STRRPbF a SiHF9530STR-E3 a Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL LIMIT VDS VGS -100 ± 20 -12 -8.2 -48 0.59 0.025 400 -12 8.8 88 3.7 - 5.5 -55 to +175 300 ID Pulsed Drain Current a IDM Linear Derating Factor Linear Derating Factor (PCB mount) e Single Pulse Avalanche Energy b EAS Avalanche Current a IAR EAR Repetitive Avalanche Energy a Maximum Power Dissipation TC = 25 °C PD Maximum Power Dissipation (PCB mount) e TA = 25 °C dV/dt Peak Diode Recovery dV/dt c Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak temperature) d for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = -25 V, starting TJ = 25 °C, L = 4.2 mH, Rg = 25 , IAS = -12 A (see fig. 12). c. ISD - 12 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). S16-0754-Rev. D, 02-May-16 UNIT V A W/°C mJ A mJ W V/ns °C Document Number: 91077 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9530S, SiHF9530S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Maximum Junction-to-Ambient (PCB mount) a RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0, ID = -250 μA -100 - - V VDS/TJ Reference to 25 °C, ID = -1 mA - -0.10 - V/°C VGS(th) VDS = VGS, ID = -250 μA -2.0 - -4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = -100 V, VGS = 0 V - - -100 VDS = -80 V, VGS = 0 V, TJ = 150 °C - - -500 Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Drain-Source On-State Resistance Forward Transconductance μA - - 0.30 gfs VDS = -50 V, ID = -7.2 A b 3.7 - - S VGS = 0 V, VDS = -25 V, f = 1.0 MHz, see fig. 5 - 860 - - 340 - - 93 - - - 38 - - 6.8 RDS(on) ID = -7.2 A b VGS = -10 V Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss pF Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - - 21 Turn-On Delay Time td(on) - 12 - tr - 52 - - 31 - - 39 - - 4.5 - - 7.5 - 0.4 - 3.3 - - -12 - - -48 - - -6.3 V - 120 240 ns - 0.46 0.92 μC Rise Time Turn-Off Delay Time Fall Time td(off) VGS = -10 V ID = -12 A, VDS = -80 V, see fig. 6 and 13 b VDD = -50 V, ID = -12 A, RG = 12 , RD = 3.9 , see fig. 10 b tf Internal Drain Inductance LD Internal Source Inductance LS Gate Input Resistance Rg Between lead, 6 mm (0.25") from package and center of die contact nC ns D nH G S f = 1 MHz, open drain Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Current a Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p -n junction diode D A G S TJ = 25 °C, IS = -12 A, VGS = 0 V b TJ = 25 °C, IF = -12 A, dI/dt = 100 A/μs b Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S16-0754-Rev. D, 02-May-16 Document Number: 91077 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9530S, SiHF9530S www.vishay.com Vishay Siliconix VGS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V - ID, Drain Current (A) Top 101 - 4.5 V 20 µs Pulse Width TC = 25 °C 100 10-1 100 101 - VDS, Drain-to-Source Voltage (V) 91077_01 Bottom 2.0 1.5 1.0 0.5 0.0 - 60- 40 - 20 0 TJ, Junction Temperature (°C) 100 Ciss 900 600 Coss 300 Crss 0 101 100 - VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage - ID, Drain Current (A) 175 °C 20 µs Pulse Width VDS = - 50 V 100 - VGS, Gate-to-Source Voltage (V) 20 25 °C 101 - VDS, Drain-to-Source Voltage (V) 91077_05 Fig. 2 - Typical Output Characteristics, TC = 175 °C ID = - 12 A 16 VDS = - 80 V VDS = - 50 V 12 VDS = - 20 V 8 4 For test circuit see figure 13 0 4 91077_03 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 1200 20 µs Pulse Width TC = 175 °C 101 20 40 60 80 100 120 140 160 180 1500 - 4.5 V 91077_02 2.5 1800 VGS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V - 4.5 V 100 10-1 ID = - 12 A VGS = - 10 V Fig. 4 - Normalized On-Resistance vs. Temperature Capacitance (pF) - ID, Drain Current (A) 101 3.0 91077_04 Fig. 1 - Typical Output Characteristics, TC = 25 °C Top RDS(on), Drain-to-Source On Resistance (Normalized) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 5 6 7 8 9 - VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S16-0754-Rev. D, 02-May-16 10 0 91077_06 10 20 30 40 50 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91077 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9530S, SiHF9530S www.vishay.com Vishay Siliconix 10 - ID, Drain Current (A) - ISD, Reverse Drain Current (A) 12 175 °C 101 25 °C 100 6 4 2 VGS = 0 V 10-1 0 1.0 2.0 3.0 5.0 4.0 50 25 - VSD, Source-to-Drain Voltage (V) 91076_07 75 100 125 150 175 TC, Case Temperature (°C) 91077_09 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature RD 103 VDS Operation in this area limited by RDS(on) 5 2 - ID, Drain Current (A) 8 VGS 102 D.U.T. Rg 5 10 µs 2 100 µs +VDD - 10 V 10 1 ms 5 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 10 ms 2 1 Fig. 10a - Switching Time Test Circuit 5 TC = 25 °C TJ = 175 °C Single Pulse 2 0.1 0.1 2 5 1 2 5 10 2 td(on) 5 2 102 5 td(off) tf tr VGS 103 10 % - VDS, Drain-to-Source Voltage (V) 91077_08 Fig. 8 - Maximum Safe Operating Area 90 % VDS Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.5 0.2 PDM 0.1 0.1 0.05 t1 Single Pulse (Thermal Response) 0.02 0.01 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 91077_11 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case S16-0754-Rev. D, 02-May-16 Document Number: 91077 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9530S, SiHF9530S www.vishay.com Vishay Siliconix L Vary tp to obtain required IAS IAS VDS VDS D.U.T. Rg + V DD VDD IAS tp - 10 V 0.01 Ω tp VDS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 1200 ID - 4.9 A - 8.5 A Bottom - 12 A Top 1000 800 600 400 200 0 VDD = - 25 V 25 91077_12c 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform S16-0754-Rev. D, 02-May-16 Fig. 13b - Gate Charge Test Circuit Document Number: 91077 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9530S, SiHF9530S www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer 3 + 2 - - 4 + 1 • dV/dt controlled by Rg • ISD controlled by duty factor “D” • D.U.T. - device under test Rg + - VDD Compliment N-channel of D.U.T. for driver 1 Driver gate drive P.W. Period D= P.W. Period VGS = -10 V a 2 D.U.T. ISD waveform Reverse recovery current 3 Body diode forward current dI/dt D.U.T. VSD waveform Re-applied voltage 4 Diode recovery dV/dt VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD Note a V = -5 V for logic level and -3 V drive devices GS Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91077. S16-0754-Rev. D, 02-May-16 Document Number: 91077 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 2.54 BSC 0.100 BSC c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. Document Number: 91364 Revision: 15-Sep-08 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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