SiHP33N60E Datasheet

SiHP33N60E
www.vishay.com
Vishay Siliconix
E Series Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V) at TJ max.
• Low figure-of-merit (FOM): Ron x Qg
650
RDS(on) max. () at 25 °C
VGS = 10 V
• Low input capacitance (Ciss)
0.099
Qg max. (nC)
150
• Reduced switching and conduction losses
Qgs (nC)
24
• Ultra low gate charge (Qg)
Qgd (nC)
42
• Avalanche energy rated (UIS)
Configuration
Single
Available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
TO-220AB
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
G
• Power factor correction power supplies (PFC)
• Lighting
G
D
- High-intensity discharge (HID)
S
S
- Fluorescent ballast lighting
N-Channel MOSFET
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
SiHP33N60E-E3
Lead (Pb)-free and Halogen-free
SiHP33N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain
VGS at 10 V
TC = 25 °C
TC = 100 °C
Current a
ID
IDM
Linear Derating Factor
UNIT
V
33
21
A
88
2.2
W/°C
mJ
Single Pulse Avalanche Energy b
EAS
793
Maximum Power Dissipation
PD
278
W
TJ, Tstg
-55 to +150
°C
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
VDS = 0 V to 80 % VDS
Reverse Diode dV/dt d
Soldering Recommendations (Peak temperature) c
for 10 s
dV/dt
70
12
300
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7.5 A.
c. 1.6 mm from case.
d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S16-0799-Rev. F, 02-May-16
Document Number: 91523
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP33N60E
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Maximum Junction-to-Case (Drain)
RthJC
-
0.45
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance a
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.71
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
VGS = ± 20 V
-
-
± 100
nA
μA
IGSS
IDSS
RDS(on)
gfs
VGS = ± 30 V
-
-
±1
VDS = 600 V, VGS = 0 V
-
-
1
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
10
-
0.083
0.099

-
11
-
S
VGS = 10 V
ID = 16.5 A
VDS = 30 V, ID = 16.5 A
μA
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
-
3508
-
Output Capacitance
Coss
VDS = 100 V,
-
156
-
Reverse Transfer Capacitance
Crss
f = 1 MHz
-
6
-
Effective Output Capacitance, Energy
Related b
Co(er)
-
136
-
Effective Output Capacitance, Time
Related c
Co(tr)
-
468
-
-
100
150
-
24
-
pF
VGS = 0 V, VDS = 0 V to 480 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
42
-
Turn-On Delay Time
td(on)
-
28
56
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Gate Input Resistance
Rg
VGS = 10 V
ID = 16.5 A, VDS = 480 V
nC
VDD = 480 V, ID = 16.5 A
Rg = 9.1 , VGS = 10 V
-
60
90
-
99
150
-
54
80
f = 1 MHz, open drain
0.2
0.7
1.0
-
-
33
S
-
-
88
TJ = 25 °C, IS = 16.5 A, VGS = 0 V
-
0.9
1.2
V
-
503
1006
ns
-
8.5
17
μC
-
26
-
A
ns

Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
MOSFET symbol
showing the 
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IF = IS,
dI/dt = 100 A/μs, VR = 20 V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
c. Coss(tr) is a fixed capacitance that gives the charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
S16-0799-Rev. F, 02-May-16
Document Number: 91523
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP33N60E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
120
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
BOTTOM 6.0 V
80
ID = 16.5 A
TJ = 25 °C
2.5
RDS(on) - On-Resistance
(Normalized)
100
ID - Drain Current (A)
3.0
TOP
60
40
2.0
1.5
1.0
0.5
20
VGS = 10 V
5.0 V
0.0
0
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
- 60 - 40 - 20
30
0
20
60
80 100 120 140 160
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 1 - Typical Output Characteristics
100 000
70
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
BOTTOM 6.0 V
50
40
TJ = 150 °C
10 000
C - Capacitance (pF)
60
ID - Drain Current (A)
40
TJ - Junction Temperature (°C)
30
Ciss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd x Cds shorted
Crss = Cgd
Coss = Cds + Cgd
1000
Coss
100
20
10
Crss
10
5.0 V
0
0
5
1
10
15
20
25
VDS - Drain-to-Source Voltage (V)
0
30
100
200
300
400
500
600
VDS - Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 2 - Typical Output Characteristics
120
25
5000
20
80
60
Coss
Eoss
500
10
Eoss (μJ)
15
Coss (pF)
ID, Drain-to-Source Current (A)
100
40
TJ = 150 °C
5
20
TJ = 25 °C
0
0
50
0
5
10
15
20
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S16-0799-Rev. F, 02-May-16
25
0
100
200
300
VDS
400
500
600
Fig. 6 - COSS and EOSS vs. VDS
Document Number: 91523
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP33N60E
www.vishay.com
Vishay Siliconix
35
24
30
VDS = 120 V
ID, Drain Current (A)
VGS - Gate-to-Source Voltage (V)
VDS = 300 V
20
16
VDS = 480 V
12
8
25
20
15
10
4
5
0
0
40
80
120
160
0
200
25
50
75
Qg - Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
125
150
Fig. 10 - Maximum Drain Current vs. Case Temperature
750
100
VDS , Drain -to -Source Breakdown
Voltage (V)
1000
IS - Source Current (A)
100
TC - Temperature (°C)
TJ = 150 °C
ġ
10
TJ = 25 °C
ġ
1
0.1
725
700
675
650
625
600
ġ
VGS = 0 V
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
1.4
1.6
575
-60 -40 -20
0
20
40
60
80 100 120 140
160
TJ,Temperature (°C)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 11 - Typical Drain-to-Source Voltage vs. Temperature
1000
Operation in this area limited
by RDS(on)*
IDM Limited
ID, Drain Current (A)
100
10
Limited by RD (on) *
100 µs
1 ms
1
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
1
10 ms
BVDSS Limited
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 9 - Maximum Safe Operating Area
S16-0799-Rev. F, 02-May-16
Document Number: 91523
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP33N60E
www.vishay.com
Vishay Siliconix
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
RD
VDS
VDS
tp
VGS
VDD
D.U.T.
RG
+
- VDD
VDS
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
IAS
Fig. 13 - Switching Time Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
VDS
QG
10 V
90 %
QGS
10 %
VGS
QGD
VG
td(on)
td(off) tf
tr
Charge
Fig. 14 - Switching Time Waveforms
Fig. 17 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
L
Vary tp to obtain
required IAS
VDS
50 kΩ
12 V
0.2 µF
0.3 µF
D.U.T
RG
+
-
IAS
+
V DD
D.U.T.
-
VDS
VGS
10 V
tp
0.01 Ω
3 mA
IG
ID
Current sampling resistors
Fig. 15 - Unclamped Inductive Test Circuit
S16-0799-Rev. F, 02-May-16
Fig. 18 - Gate Charge Test Circuit
Document Number: 91523
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP33N60E
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 19 - For N-Channel










Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91523.
S16-0799-Rev. F, 02-May-16
Document Number: 91523
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
E
DIM.
Q
H(1)
D
3
2
L(1)
1
M*
L
b(1)
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
F
ØP
MILLIMETERS
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
0.115
J(1)
2.41
2.92
0.095
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE
Revison: 14-Dec-15
Xi’an
Document Number: 66542
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000