Si2343CDS Datasheet

Si2343CDS
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) (Ω)
ID (A)a, e
0.045 at VGS = - 10 V
- 5.9
0.075 at VGS = - 4.5 V
- 4.6
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
7 nC
APPLICATIONS
• Load Switch
• Notebook Adaptor Switch
• DC/DC Converter
TO-236
(SOT-23)
S
G
1
S
2
3
D
G
Top View
Si2343CDS (P1)*
* Marking Code
D
Ordering Information: Si2343CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
- 4.7
ID
TA = 25 °C
- 4.2b, c
- 3.3b, c
TA = 70 °C
Maximum Power Dissipation
IDM
TC = 25 °C
- 25
- 1b, c
TC = 25 °C
2.5
TC = 70 °C
1.6
PD
TA = 25 °C
A
- 2.1
IS
TA = 25 °C
W
1.25b, c
0.8b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
V
- 5.9
TC = 70 °C
Pulsed Drain Current
Continous Source-Drain Diode Current
Unit
TJ, Tstg
°C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambientb, d
t≤5s
RthJA
75
100
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
40
50
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 166 °C/W.
e. Package Limited.
Document Number: 65474
S09-2270-Rev. A, 02-Nov-09
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Si2343CDS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
V
- 19
ID = - 250 µA
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = - 250 µA
- 2.5
V
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
-5
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS ≤ - 5 V, VGS = - 10 V
4.4
- 1.2
- 25
µA
A
VGS = - 10 V, ID = - 4.2 A
0.037
0.045
VGS = - 4.5 V, ID = - 3.2 A
0.062
0.075
VDS = - 15 V, ID = - 4.2 A
10
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
590
VDS = - 15 V, VGS = 0 V, f = 1 MHz
td(off)
pF
93
VDS = - 15 V, VGS = - 10 V, ID = - 4.2 A
13.6
21
7
11
2.3
VDS = - 15 V, VGS = - 4.5 V, ID = - 4.2 A
VDD = - 15 V, RL = 4.5 Ω
ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω
1
5
10
30
45
25
38
16
24
tf
8
16
td(on)
8
16
10
20
tr
td(off)
nC
3.2
f = 1 MHz
td(on)
tr
115
VDD = - 15 V, RL = 4.5 Ω
ID ≅ - 3.3 A, VGEN = - 10 V, Rg = 1 Ω
tf
18
27
8
16
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 4.2
- 25
IS = - 3.3 A, VGS = 0 V
IF = - 3.3 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
17
26
ns
9
18
nC
10
7
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65474
S09-2270-Rev. A, 02-Nov-09
Si2343CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
3.0
VGS = 5 V
VGS = 10 V thru 6 V
2.4
I D - Drain Current (A)
I D - Drain Current (A)
20
15
VGS = 4 V
10
1.8
1.2
TC = 25 °C
5
0.6
VGS = 3 V
TC = 125 °C
TC = - 55 °C
0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
3
4
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1000
0.10
800
0.08
VGS = 4.5 V
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
2
0.06
VGS = 10 V
0.04
Ciss
600
400
Coss
200
0.02
Crss
0
0.00
0
5
10
15
20
0
25
10
15
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
20
1.7
10
ID = 4.2 A
ID = 4.2 A
VDS = 15 V
1.5
VDS = 8 V
6
VDS = 24 V
4
VGS = 10 V
(Normalized)
8
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
5
1.3
VGS = 4.5 V
1.1
0.9
2
0
0
3
6
9
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 65474
S09-2270-Rev. A, 02-Nov-09
12
15
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si2343CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
100
TJ = 25 °C
1
0.08
TJ = 125 °C
0.06
TJ = 25 °C
0.04
0.02
0.1
0.0
VGS(th) (V)
R DS(on) - On-Resistance (Ω)
TJ = 150 °C
10
0.3
0.6
0.9
1.2
2
1.5
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.2
10
2.0
8
1.8
ID = 250 µA
1.6
1.4
1.2
- 50
4
VSD - Source-to-Drain Voltage (V)
Power (W)
I S - Source Current (A)
ID = 4.2 A
6
4
2
- 25
0
25
50
75
100
125
0
0.01
150
TA = 25 °C
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Single Pulse Power (Junction-to-Ambient)
Threshold Voltage
100
I D - Drain Current (A)
Limited by RDS(on)*
10
100 µs
1 ms
1
10 ms
0.1
100 ms
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
1 s, 10 s
DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 65474
S09-2270-Rev. A, 02-Nov-09
Si2343CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
I D - Drain Current (A)
6
Package Limited
4
2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
2.5
1.0
2.0
0.8
1.5
0.6
Power (W)
Power (W)
Current Derating*
1.0
0.5
0.4
0.2
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65474
S09-2270-Rev. A, 02-Nov-09
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Si2343CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65474.
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Document Number: 65474
S09-2270-Rev. A, 02-Nov-09
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Disclaimer
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Document Number: 91000
Revision: 18-Jul-08
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