Si4447ADY Datasheet

New Product
Si4447ADY
Vishay Siliconix
P-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)d
0.045 at VGS = - 10 V
- 7.2
0.062 at VGS = - 4.5 V
- 6.1
VDS (V)
- 40
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
11.8 nC
APPLICATIONS
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
S
• Load Switches, Adaptor Switch
- Notebook PCs
G
Top View
D
Ordering Information: Si4447ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 40
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
- 5.7
ID
TA = 25 °C
- 5.5a, b
- 4.4a, b
Pulsed Drain Current
IDM
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
- 3.5
- 2.1a, b
IAS
- 10
5
EAS
TC = 25 °C
2.7
PD
TA = 25 °C
2.5a, b
W
1.6a, b
TA = 70 °C
Operating Junction and Storage Temperature Range
mJ
4.2
TC = 70 °C
Maximum Power Dissipation
A
- 20
IS
TA = 25 °C
L = 0.1 mH
V
- 7.2
TC = 70 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Unit
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
a, c
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
Symbol
Typical
Maximum
t 10 s
RthJA
40
50
Steady State
RthJF
24
30
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 85 °C/W.
d. Based on TC = 25 °C.
Document Number: 67189
S10-2767-Rev. A, 29-Nov-10
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1
New Product
Si4447ADY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 40
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
V
- 42
ID = - 250 µA
mV/°C
4.6
VGS(th)
VDS = VGS, ID = - 250 µA
- 2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 40 V, VGS = 0 V
-1
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
-5
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS  - 10 V, VGS = - 10 V
- 1.2
- 10
µA
A
VGS = - 10 V, ID = - 5 A
0.036
0.045
VGS = - 4.5 V, ID = - 4 A
0.050
0.062
VDS = - 10 V, ID = - 5 A
14

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
970
VDS = - 20 V, VGS = 0 V, f = 1 MHz
pF
95
VDS = - 20 V, VGS = - 10 V, ID = - 5 A
VDS = - 20 V, VGS = - 4.5 V, ID = - 5 A
25
38
11.8
18
3
VDD = - 20 V, RL = 4 
ID  - 5 A, VGEN = - 10 V, Rg = 1 
1.0
5.5
11
7
14
12
24
30
60
tf
9
18
td(on)
44
80
td(off)
tr
td(off)
nC
5.2
f = 1 MHz
td(on)
tr
120
VDD = - 20 V, RL = 4 
ID  - 5 A, VGEN = - 4.5 V, Rg = 1 
tf
33
60
28
55
13
25

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
- 3.5
- 20
IS = - 2 A, VGS = 0 V
- 0.76
- 1.2
A
V
Body Diode Reverse Recovery Time
trr
27
50
ns
Body Diode Reverse Recovery Charge
Qrr
19
35
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C
14
13
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67189
S10-2767-Rev. A, 29-Nov-10
New Product
Si4447ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
30
V GS = 10 V thru 5 V
4
V GS = 4 V
ID - Drain Current (A)
ID - Drain Current (A)
24
18
12
3
2
T C = 25 °C
6
0
0.0
T C = 125 °C
T C = - 55 °C
0
0.5
1.0
1.5
2.0
0
2.5
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.10
1600
0.08
1280
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1
V GS = 3 V
V GS = 4.5 V
0.06
V GS = 10 V
0.04
0.02
5
Ciss
960
640
Coss
320
Crss
0.00
0
6
12
18
24
0
0.0
30
4.8
7.2
9.6
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
12.0
1.8
10
ID = 5 A
ID = 5 A
V GS = 10 V
8
V DS = 20 V
6
V DS = 10 V
V DS = 30 V
4
1.5
(Normalized)
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
2.4
V GS = 4.5 V
1.2
0.9
2
0
0.0
5.1
10.2
15.3
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 67189
S10-2767-Rev. A, 29-Nov-10
20.4
25.5
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
Si4447ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.20
ID = 5 A
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
T J = 150 °C
1
0.1
T J = 25 °C
0.12
0.08
T J = 125 °C
T J = 25 °C
0.04
0.01
0.001
0.0
0.16
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
50
0.6
40
0.4
Power (W)
VGS(th) Variance (V)
ID = 250 μA
ID = 1 mA
0.2
30
20
0
10
- 0.2
- 0.4
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
ID - Drain Current (A)
10
Limited by R DS(on)*
1 ms
1
10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS Limited
1
1s
10 s
DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 67189
S10-2767-Rev. A, 29-Nov-10
New Product
Si4447ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8.0
ID - Drain Current (A)
6.4
4.8
3.2
1.6
0.0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
5
2.0
4
1.6
3
1.2
Power (W)
Power (W)
Current Derating*
2
0.8
0.4
1
0.0
0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Foot
125
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67189
S10-2767-Rev. A, 29-Nov-10
www.vishay.com
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New Product
Si4447ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
0.01
10 -4
Single Pulse
10 -3
4. Surface Mounted
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67189.
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Document Number: 67189
S10-2767-Rev. A, 29-Nov-10
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000