SUP90P06-09L Datasheet

SUP90P06-09L
Vishay Siliconix
P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 60
RDS(on) ()
ID (A)c
0.0093 at VGS = - 10 V
- 90
0.0118 at VGS = - 4.5 V
- 90
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
RoHS
COMPLIANT
APPLICATIONS
• DC/DC Primary Switch
TO-220AB
S
G
Drain connected to Tab
G D S
Top View
D
P-Channel MOSFET
Ordering Information: SUP90P06-09L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)c
TC = 25 °C
TC = 125 °C
Pulsed Drain Current
Avalanche Current
a
L = 0.1 mH
Single Pulse Avalanche Energy
Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TA = 25 °C
ID
- 67
- 200
IAS
- 65
PD
V
- 90
IDM
EAS
Unit
211
250b
2.4
A
mJ
W
TJ, Tstg
- 55 to 175
°C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Free Air
RthJA
62
Junction-to-Case
RthJC
0.6
°C/W
Notes:
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. Limited by package.
Document Number: 73010
S10-2545-Rev. B, 08-Nov-10
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SUP90P06-09L
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 60
VGS(th)
VDS = VGS, ID = - 250 µA
-1
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
± 100
VDS = - 60 V, VGS = 0 V
-1
VDS = - 60 V, VGS = 0 V, TJ = 125 °C
- 50
VDS = - 60 V, VGS = 0 V, TJ = 175 °C
- 250
VDS= - 5 V, VGS = - 10 V
ID(on)
On-State Drain Currenta
- 120
VGS = - 10 V, ID = - 30 A
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductance
0.0150
VGS = - 10 V, ID = - 30 A, TJ = 175 °C
0.0190
VDS = - 15 V, ID = - 30 A
nA
µA
0.0093
VGS = - 10 V, ID = - 30 A, TJ = 125 °C
gfs
V
A
0.0074
VGS = - 4.5 V, ID = - 20 A
a
-3
0.0094

0.0118
20
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
c
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
c
c
td(on)
c
td(off)
tr
Rise Timec
Turn-Off Delay Time
Fall Timec
975
pF
760
Qg
Total Gate Chargec
Turn-On Delay Time
9200
VGS = 0 V, VDS = - 25 V, f = 1 MHz
160
VDS = - 30 V, VGS = - 10 V, ID = - 90 A
240
nC
40
36
f = 1.0 MHz
VDD = - 30 V, RL = 0.33 
ID  - 90 A, VGEN = - 10 V, Rg = 2.5 
tf

3
20
30
190
285
140
210
300
450
ns
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
IS
- 90
Pulsed Current
ISM
- 200
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = - 50 A, VGS = 0 V
- 1.0
IF = - 50 A, dI/dt = 100 A/µs
0.09
trr
IRM(REC)
Qrr
A
- 1.5
V
60
90
ns
-3
- 4.5
A
0.2
µC
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73010
S10-2545-Rev. B, 08-Nov-10
SUP90P06-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
200
200
5V
VGS = 10 V thru 6 V
160
I D - Drain Current (A)
I D - Drain Current (A)
160
120
4V
80
120
80
TC = 125 °C
40
40
25 °C
2V
3V
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.020
200
160
25 °C
120
125 °C
R DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
TC = - 55 °C
80
40
0.016
0.012
VGS = 4.5 V
VGS = 10 V
0.008
0.004
0.000
0
0
10
20
30
40
50
60
70
0
80
20
40
ID - Drain Current (A)
80
100
120
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
20
VGS - Gate-to-Source Voltage (V)
15 000
12 000
C - Capacitance (pF)
60
Ciss
9000
6000
3000
VDS = 30 V
ID = 90 A
16
12
8
4
Coss
Crss
0
0
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 73010
S10-2545-Rev. B, 08-Nov-10
50
60
0
40
80
120
160
200
240
280
320
Qg - Total Gate Charge (nC)
Gate Charge
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SUP90P06-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
2.0
VGS = 10 V
ID = 30 A
I S - Source Current (A)
R DS(on) - On-Resistance
(Normalized)
1.7
1.4
1.1
TJ = 150 °C
TJ = 25 °C
10
0.8
0.5
- 50
- 25
0
25
50
75
100
125
150
1
0.0
175
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
1000
76
ID = 10 mA
72
V DS (V)
I Dav (a)
100
IAV (A) at TA = 25 °C
10
68
64
1
60
IAV (A) at TA = 150 °C
0.1
0.0001
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0.001
0.01
0.1
1
56
- 50
- 25
0
25
50
75
100
125
tin (s)
TJ - Junction Temperature (°C)
Avalanche Current vs. Time
Drain Source Breakdown vs.
Junction Temperature
150
175
Document Number: 73010
S10-2545-Rev. B, 08-Nov-10
SUP90P06-09L
Vishay Siliconix
THERMAL RATINGS
1000
200
Limited by RDS(on)*
10 µs
I D - Drain Current (A)
I D - Drain Current (A)
150
100
Limited
by Package
50
25
50
75
100
125
150
100 µs
10
1 ms
10 ms
100 ms, DC
1
0.1
0.1
0
0
100
175
TC - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
TC = 25 °C
Single Pulse
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
PDM
0.1
0.1
0.05
0.02
t1
t2
1. Duty Cycle, D =
Single Pulse
t1
t2
2. Per Unit Base = RthJA = 62.5 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73010.
Document Number: 73010
S10-2545-Rev. B, 08-Nov-10
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Package Information
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Vishay Siliconix
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
D2
12.19
12.70
0.480
0.500
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
0.115
J(1)
2.41
2.92
0.095
L
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2
Document Number: 71195
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 16-Jun-14
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Revision: 02-Oct-12
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Document Number: 91000