IRF644, SiHF644 Datasheet

IRF644, SiHF644
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Dynamic dV/dt rating
250
RDS(on) ()
VGS = 10 V
68
• Fast switching
Qgs (nC)
11
• Ease of paralleling
Qgd (nC)
35
• Simple drive requirements
Qg max. (nC)
Configuration
Available
• Repetitive avalanche rated
0.28
Single
Available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
TO-220AB
G
DESCRIPTION
G
D
S
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness. 
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRF644PbF
Lead (Pb)-free
SiHF644-E3
IRF644
SnPb
SiHF644
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
250
Gate-Source Voltage
VGS
± 20
VGS at 10 V
Continuous Drain Current
Pulsed Drain
TC = 25 °C
TC = 100 °C
Current a
ID
IDM
Linear Derating Factor
UNIT
V
14
8.5
A
56
1.0
W/°C
mJ
Single Pulse Avalanche Energy b
EAS
550
Repetitive Avalanche Current a
IAR
14
A
Repetitive Avalanche Energy a
EAR
13
mJ
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
Mounting Torque
d
for 10 s
6-32 or M3 screw
PD
125
W
dV/dt
4.8
V/ns
TJ, Tstg
-55 to +150
300
°C
10
lbf · in
1.1
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 4.5 mH, Rg = 25 , IAS = 14 A (see fig. 12).
c. ISD  14 A, dI/dt  150 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
S16-0754-Rev. D, 02-May-16
Document Number: 91039
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF644, SiHF644
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
VDS
VGS = 0 V, ID = 250 μA
250
-
-
V
VDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.34
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 250 V, VGS = 0 V
-
-
25
VDS = 200 V, VGS = 0 V, TJ = 125 °C
-
-
250
μA
-
-
0.28

gfs
VDS = 50 V, ID = 8.4 A b
6.7
-
-
S
Input Capacitance
Ciss
1300
-
Coss
-
330
-
Reverse Transfer Capacitance
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
Output Capacitance
-
85
-
-
-
68
-
-
11
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
ID = 8.4 A b
VGS = 10 V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
-
35
Turn-On Delay Time
td(on)
-
11
-
tr
-
24
-
-
53
-
-
49
-
-
4.5
-
-
7.5
-
0.3
-
1.2
-
-
14
-
-
56
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Gate Input Resistance
Rg
VGS = 10 V
ID = 7.9 A, VDS = 200 V,
see fig. 6 and 13 b
VDD = 125 V, ID = 7.9 A,
Rg = 9.1 , RD = 8.7, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
S
f = 1 MHz, open drain

Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current a
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the 
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 14 A, VGS = 0 V b
TJ = 25 °C, IF = 7.9 A, dI/dt = 100 A/μs b
-
-
1.8
V
-
250
500
ns
-
2.3
4.6
μC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
S16-0754-Rev. D, 02-May-16
Document Number: 91039
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF644, SiHF644
www.vishay.com
Vishay Siliconix
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
ID, Drain Current (A)
Top
101
100
4.5 V
20 µs Pulse Width
TC = 25 °C
10-1
100
101
VDS, Drain-to-Source Voltage (V)
91039_01
RDS(on), Drain-to-Source On Resistance
(Normalized)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
ID = 7.9 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
TJ, Junction Temperature (°C)
91039_04
Fig. 1 - Typical Output Characteristics, TC = 25 °C
20 40 60 80 100 120 140 160
Fig. 4 - Normalized On-Resistance vs. Temperature
3000
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
101
2400
4.5 V
100
Capacitance (pF)
ID, Drain Current (A)
Top
1800
Ciss
1200
Coss
600
20 µs Pulse Width
TC = 150 °C
100
10-1
0
101
100
VDS, Drain-to-Source Voltage (V)
91039_02
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
25 °C
100
20 µs Pulse Width
VDS = 50 V
10-1
4
91039_03
5
6
7
8
9
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S16-0754-Rev. D, 02-May-16
VGS, Gate-to-Source Voltage (V)
ID, Drain Current (A)
20
150 °C
101
VDS, Drain-to-Source Voltage (V)
91039_05
Fig. 2 - Typical Output Characteristics, TC = 150 °C
101
Crss
ID = 7.9 A
VDS = 200 V
16
VDS = 125 V
VDS = 50 V
12
8
4
For test circuit
see figure 13
0
10
0
91039_06
10
20
30
40
50
60
70
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91039
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF644, SiHF644
www.vishay.com
Vishay Siliconix
12
101
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
14
150 °C
25 °C
100
8
6
4
2
VGS = 0 V
10-1
0.5
0
0.6
0.7
0.9
0.8
1.1
1.0
25
VSD, Source-to-Drain Voltage (V)
91039_07
103
50
100
125
RD
VDS
VGS
2
D.U.T.
RG
+
- VDD
102
5
10 µs
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
2
100 µs
10
5
Fig. 10a - Switching Time Test Circuit
1 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
2
1
2
1
5
10
2
5
VDS
10 ms
102
2
5
150
Fig. 9 - Maximum Drain Current vs. Case Temperature
Operation in this area limited
by RDS(on)
5
75
TC, Case Temperature (°C)
91039_09
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID, Drain Current (A)
10
90 %
103
VDS, Drain-to-Source Voltage (V)
91039_08
Fig. 8 - Maximum Safe Operating Area
10 %
VGS
td(on)
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
1
0 − 0.5
PDM
0.2
0.1
0.1
t1
0.05
t2
0.02
0.01
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
Single Pulse
(Thermal Response)
10-2
10-5
91039_11
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S16-0754-Rev. D, 02-May-16
Document Number: 91039
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF644, SiHF644
www.vishay.com
Vishay Siliconix
VDS
L
Vary tp to obtain
required IAS
VDS
tp
VDD
D.U.T
RG
+
-
I AS
VDS
V DD
10 V
IAS
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
EAS, Single Pulse Energy (mJ)
1200
ID
6.3 A
8.9 A
Bottom 14 A
Top
1000
800
600
400
200
0
VDD = 50 V
25
91039_12c
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
10 V
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
S16-0754-Rev. D, 02-May-16
Fig. 13b - Gate Charge Test Circuit
Document Number: 91039
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF644, SiHF644
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
+
-
-
Rg
•
•
•
•
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel









Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91039.
S16-0754-Rev. D, 02-May-16
Document Number: 91039
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
E
DIM.
Q
H(1)
D
3
2
L(1)
1
M*
L
b(1)
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
F
ØP
MILLIMETERS
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
0.115
J(1)
2.41
2.92
0.095
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE
Revison: 14-Dec-15
Xi’an
Document Number: 66542
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000