VS-FA40SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 40 A FEATURES • Fully isolated package • Easy to use and parallel • Low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance • Low internal inductance SOT-227 • UL approved file E78996 • Designed for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY DESCRIPTION VDSS 500 V RDS(on) 0.106 ID 40 A Type Modules - MOSFET Package SOT-227 Third Generation Power MOSFETs from Vishay Semiconductors provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 500 W. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS PARAMETER Continuous drain current at VGS 10 V Pulsed drain current Power dissipation Gate to source voltage SYMBOL ID TEST CONDITIONS TC = 25 °C TC = 90 °C IDM (1) PD MAX. UNITS 40 29 A 150 TC = 25 °C 543 TC = 90 °C 261 W VGS ± 20 V Single pulse avalanche energy EAS (2) 400 mJ Repetitive avalanche current IAR (1) 13 A Repetitive avalanche energy EAR (1) 42 mJ Peak diode recovery dV/dt dV/dt (3) 10 V/ns Operating junction and storage temperature range TJ, TStg -55 to +150 °C VISO 2.5 kV 1.3 Nm Insulation withstand voltage (AC-RMS) Mounting torque M4 screw, on terminals and heatsink Notes (1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 18) (2) Starting T = 25 °C, L = 500 μH, R = 2.4 , I J g AS = 40 A (see fig. 18) (3) I 40 A, dI /dt 200 A/μs, V SD F DD V(BR)DSS, TJ 150 °C Revision: 01-Jun-16 Document Number: 94803 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FA40SA50LC www.vishay.com Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS °C TJ, TStg - 55 - 150 Junction to case RthJC - - 0.23 Case to heatsink RthCS - 0.05 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - Junction and storage temperature range Flat, greased surface Weight Mounting torque Case style °C/W 1.3 (11.5) Nm (lbf.in) SOT-227 ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER Drain to source breakdown voltage Breakdown voltage temperature coefficient Static drain to source on-resistance Gate threshold voltage Forward transconductance Drain to source leakage current Gate to source forward leakage Gate to source reverse leakage Total gate charge SYMBOL V(BR)DSS V(BR)DSS/TJ RDS(on) (1) VGS(th) gfs IDSS IGSS Qg Gate to source charge Qgs Gate to drain ("Miller") charge Qgd Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time TEST CONDITIONS MIN. TYP. MAX. UNITS 500 - - V Reference to 25 °C, ID = 1 mA - 0.65 - V/°C VGS = 10 V, ID = 23 A - 106 130 m VGS = 0 V, ID = 1.0 mA VDS = VGS, ID = 250 μA 2 3 4 VDS = VGS, ID = 250 μA, TJ = 125 °C - 1.9 - VDS = 50 V, ID = 23 A - 29 - VDS = 500 V, VGS = 0 V - 0.5 50 VDS = 500 V, VGS = 0 V, TJ = 125 °C - 30 500 VDS = 500 V, VGS = 0 V, TJ = 150 °C - 0.2 3 VGS = 20 V - - 200 VGS = - 20 V - - - 200 ID = 38 A VDS = 400 V VGS = 10 V; see fig. 15 and 19 (1) - 280 420 VDD = 250 V, ID = 40 A, Rg = 2.4 L = 500 μH, diode used: 60APH06 - 37 55 - 150 220 td(on) - 143 - tr - 33 - - 107 - - 36 - td(off) tf td(on) tr td(off) VDD = 250 V, ID = 40 A, Rg = 2.4 L = 500 μH, TJ = 125 °C, diode used: 60APH06 tf Internal source inductance LS Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Between lead, and center of die contact VGS = 0 V VDS = 25 V f = 1.0 MHz, see fig. 14 - 145 - - 35 - - 110 - - 40 - - 5 - - 6900 - - 1600 - - 580 - V S μA mA nA nC ns ns nH pF Note (1) Pulse width 300 μs, duty cycle 2 % Revision: 01-Jun-16 Document Number: 94803 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FA40SA50LC www.vishay.com Vishay Semiconductors SOURCE-DRAIN RATINGS AND CHARACTERISTICS PARAMETER SYMBOL Continuous source current (body diode) TEST CONDITIONS D IS Pulsed source current (body diode) MOSFET symbol showing the integral reverse p-n junction diode. ISM (1) Diode forward voltage VSD (2) Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Forward turn-on time ton MIN. TYP. MAX. - - 38 - - 150 UNITS A G S TJ = 25 °C, IS = 38 A, VGS = 0 V - 0.9 1.31 TJ = 125 °C, IS = 38 A, VGS = 0 V - 0.75 - - 560 - - 40 - A - 11 - μC - 680 - ns - 47 - A - 16 - μC TJ = 25 °C, IF = 40 A; dIF/dt = 100 A/μs (2) TJ = 25 °C, IF = 40 A; dIF/dt = 100 A/μs (2) V ns Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD) Notes (1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 18) (2) Pulse width 300 μs, duty cycle 2 % 120 140 IDS , Drain-to-Source Current (A) Allowable Case Temperature (°C) 160 120 100 80 60 40 VGS = 15 V 100 VGS = 12 V VGS = 10 V 80 VGS = 8 V VGS = 7 V 60 40 VGS = 6 V 20 20 0 VGS = 5 V 0 0 10 20 30 40 50 Continuous Drain-Source Current IDS (A) 60 Fig. 1 - Maximum DC MOSFET Drain-Source Current vs. Case Temperature 0 TJ = 25 °C TJ = 150 °C IDS , Drain-to-Source Current (A) IDS - Drain to Source Current (A) 20 70 TJ = 125 °C 1 4 6 8 10 12 14 16 18 VDS , Drain-to-Source Voltage (V) Fig. 3 - Typical Drain-to-Source Current Output Characteristics at TJ = 25 °C 100 10 2 VGS = 15 V 60 VGS = 12 V VGS = 10 V 50 VGS = 8 V VGS = 7 V 40 VGS = 6 V 30 VGS = 5 V 20 10 0.1 0.1 1 10 VDS - Drain to source Voltage (V), at VGS = 10 V Fig. 2 - Typical Drain-to-Source Current Output Characteristics; VGS = 10 V 0 0 2 4 6 8 10 12 14 16 18 VDS , Drain-to-Source Voltage (V) 20 Fig. 4 - Typical Drain-to-Source Current Output Characteristics at TJ = 125 °C Revision: 01-Jun-16 Document Number: 94803 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FA40SA50LC www.vishay.com Vishay Semiconductors 140 VGS = 15 V VGS = 12 V 50 120 ID - Drain to Source current (A) IDS , Drain-to-Source Current (A) 60 VGS = 10 V 40 VGS = 6 V VGS = 8 V 30 VGS = 5 V 20 VGS = 7 V 10 TJ = 25 °C 100 80 60 40 TJ = 150 °C 20 0 0 2 4 6 8 10 12 14 16 18 VDS , Drain-to-Source Voltage (V) 280 260 240 220 200 180 160 140 120 9.5 1 TJ = 150 °C 0.1 0.01 TJ = 125 °C 0.001 TJ = 25 °C 0.0001 100 80 0 20 40 60 80 100 120 140 160 0.00001 0 T J - Junction Temperature (°C) Fig. 6 - Normalized On-Resistance vs. Temperature 100 200 300 400 500 VDSS - Drain to Source Voltage (V) 600 Fig. 9 - Typical MOSFET Zero Gate Voltage Drain Current 5 280 TJ = 25 °C 4.5 240 VGSth - Threshold Voltage (V) IFSD - Forward Source to Drain Current (A) 3.5 4.5 5.5 6.5 7.5 8.5 VGS - Gate to Source Voltage (V) 10 ID = 40 A VGS = 10 V 300 2.5 Fig. 8 - Typical MOSFET Transfer Characteristics IDSS - Drain to Source Current (mA) RDS(on) - Drain-to-Source On Resistance (mΩ) Fig. 5 - Typical Drain-to-Source Current Output Characteristics at TJ = 150 °C 320 0 20 TJ = 125 °C 200 160 120 80 TJ = 150 °C 4 3.5 TJ = 25 °C 3 2.5 TJ = 125 °C 2 1.5 TJ = 150 °C 1 40 0.5 TJ = 125 °C 0 0 0.2 0.4 VFSD 0.6 0.8 1.0 1.2 1.4 1.6 - Drain to Source Forward Voltage Drop Characteristics (V) 1.8 Fig. 7 - Typical Body Diode Forward Voltage Drop Characeristics 0.20 0.40 0.60 ID (mA) 0.80 1.00 Fig. 10 - Typical MOSFET Threshold Voltage Revision: 01-Jun-16 Document Number: 94803 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FA40SA50LC www.vishay.com Vishay Semiconductors 1 td(on) td(off) 0.1 td(on) Swiching Time (μs) Switching time (μs) 1 td(off) tr 0.1 tf tf tr 0.01 0.01 0 10 20 30 40 50 0 10 20 Drain to source current - IDS (A) Fig. 11 - Typical MOSFET Switching Time vs. IDS, TJ = 125 °C, VDD = 250 V, VGS = 10 V, L = 500 μH, RG = 2.4 Diode used 60APH06 30 RG (Ω) 40 50 60 Fig. 12 - Typical MOSFET Switching Time vs. RG, TJ = 125 °C, IDS = 40 A , VDD = 250 V, VGS = 10 V, L = 500 μH Diode used 60APH06 Z thJC - Thermal Impedance Junction to Case ( °C/W) 1 0.1 Notes: PDM 0.75 0.50 0.25 0.1 0.05 0.02 DC 0.01 0.001 0.00001 0.0001 t1 t2 1. Duty Cycle, D = t1 t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.01 0.1 1 t 1 - Rectangular Pulse Duration (s) Fig. 13 - Maximum Thermal Impedance ZthJC Characteristics, MOSFET VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 14000 12000 10000 Ciss 8000 6000 Coss 4000 Crss 2000 20 VGS , Gate-to-Source Voltage (V) 16000 ID = 38A VDS = 400V VDS = 250V VDS = 100V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 19 0 0 1 10 100 VDS , Drain-to-Source Voltage (V) Fig. 14 - Typical Capacitance vs. Drain to Source Voltage 0 80 160 240 320 400 QG , Total Gate Charge (nC) Fig. 15 - Typical Gate Charge vs. Gate to Source Voltage Revision: 01-Jun-16 Document Number: 94803 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FA40SA50LC www.vishay.com Vishay Semiconductors 1000 ID , Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 V(BR)DSS 10 μs tp 100 μs 10 1 ms 1 TC = 25 °C TJ = 150 °C Single Pulse 1 10 ms 10 100 1000 10 000 I AS VDS , Drain-to-Source Voltage (V) Fig. 20 - Unclamped Inductive Waveforms Fig. 16 - Maximum Safe Operating Area RD VDS QG VGS D.U.T. 10V RG + - VDD QGS QGD VG 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Charge Fig. 17 - Switching Time Test Circuit Fig. 21 - Basic Gate Charge Waveform VDS 90% Current regulator Same type as D.U.T. 0% 50 KΩ GS td(on) tr t d(off) .2 µF 12 V tf .3 µF Fig. 18 - Switching Time Waveforms D.U.T. 15 V + V - DS VGS 3 mA L VDS Driver IG ID Current sampling resistors D.U.T RG IAS 20 V tp + - VDD A Fig. 22 - Gate Charge Test Circuit 0.01 Ω Fig. 19 - Unclamped Inductive Test Circuit Revision: 01-Jun-16 Document Number: 94803 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FA40SA50LC www.vishay.com Vishay Semiconductors + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer 3 + 2 4 - - + 1 RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - Device under test + - VDD Fig. 23 - Peak Diode Recovery dV/dt Test Circuit Driver Gate Drive P.W. D= Period P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig. 24 - For N-Channel Power MOSFETs Revision: 01-Jun-16 Document Number: 94803 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FA40SA50LC www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- F A 40 S A 50 LC 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Power MOSFET 3 - A = Generation 3, MOSFET silicon die 4 - Current rating (40 = 40 A) 5 - Single switch 6 - Package indicator (SOT-227) 7 - Voltage rating (50 = 500 V) 8 - LC = Low charge CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING D (3) 3 (D) 2 (G) 4 (S) 1 (S) G (2) S (1-4) Lead Assignment Single switch S (S) (D) 4 3 1 2 (S) (G) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 01-Jun-16 Document Number: 94803 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter Revision: 02-Aug-12 Document Number: 95423 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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