Using the ISL8105BEVAL1Z, ISL8105BEVAL2Z PWM Controller Evaluation Board ® Application Note Introduction The ISL8105B is a simple single-phase PWM controller for a synchronous buck converter that operates from +5V or +12V bias supply voltage. With integrated linear regulator, boot diode, and gate drivers, the ISL8105B reduces external component count and board space requirements. The ISL8105BEVAL1Z, ISL8105BEVAL2Z evaluation board highlights the operations of the controller in a DC/DC application. ISL8105BEVAL1Z , ISL8105BEVAL2Z Reference Design TABLE 1. ISL8105BEVAL1Z, ISL8105BEVAL2Z EVALUATION BOARD DESIGN PARAMETERS Input Voltage (VIN) MIN TYP MAX 9.6V 12V 14.4V Output Voltage (VOUT) 1.8V Output Voltage Ripple (VRIPPLE) 30mVP-P Continuous Load Current 15A Efficiency 90 Two versions of the evaluation board, based on the package type, are listed in Table 2. TABLE 2. EVALUATION BOARDS BOARD NAME AN1288.1 In the evaluation board, a 1µH inductor with 1.87mΩ DCR (Cooper Bussmmann’s HC9-1R0-R) is employed. This yields approximately 0.44W conduction loss in the inductor. Output Capacitor Selection The output capacitors are generally selected by the output voltage ripple and load transient response requirements. ESR and capacitor charge are major contributions to the output voltage ripple. Assuming that the total output capacitance is sufficient, then the output voltage ripple is dominated by the ESR, which can be calculated using Equation 2. (EQ. 2) V RIPPLE = ΔI L ⋅ ESR The ISL8105BEVAL1Z, ISL8105BEVAL2Z evaluation board is designed to optimize for the output voltage and current specifications shown in Table 1. PARAMETER October 30, 2008 IC PACKAGE ISL8105BEVAL1Z ISL8105BIBZ 8 Ld SOIC ISL8105BEVAL2Z ISL8105BIRZ 10 Ld DFN To meet the 30mVP-P output voltage ripple requirement, the effective ESR should be less than 5mΩ. The output voltage response to a transient load is contributed from ESL, ESR and the amount of output capacitance. With VIN>>VOUT, the amplitude of the voltage excursions can be approximated using Equation 3: 2 L ⋅ I tran ΔV = ------------------------------------C OUT ⋅ V OUT With 1µH inductor and 0A to 15A step load, the total output capacitance of 1560µF is required for 80mV output voltage transient. In the ISL8105BEVAL1Z, ISL8105BEVAL2Z evaluation board, four of Sanyo’s 2R5TPF470ML are employed. Input Capacitor Selection The input bulk capacitors selection criteria are based on the capacitance and RMS current capability. The RMS current rating requirement for the input capacitor is approximated in Equation 4: I IN, RMS = Design Procedure (EQ. 3) ΔI 2 I O 2 ( D – D 2 ) + -------- D 12 VO D = ---------VIN (EQ. 4) The following sections illustrate simple design steps and component selections for a converter using the ISL8105BEVAL1Z, ISL8105BEVAL2Z. In this application, the RMS current for the input capacitors is 5.4A; therefore, three of Sanyo’s 35ME330AX are used. Output Inductor Selection Small ceramic capacitors for high frequency decoupling are also required to control the voltage overshoot across the MOSFETs. The output inductor is chosen by the desired inductor ripple current, which is typically set to be approximately 40% of the rated output current. The desired output inductor can be calculated using Equation 1: V IN – V OUT V OUT 1 L = -------------------------------- × ---------------- × -----------V IN ΔI F SW (EQ. 1) 14.4 – 1.8 1.8 1 = -------------------------- × ----------- × ---------------------3 0.4 ⋅ 15 14.4 300 ×10 MOSFET Selection The ISL8105B requires two N-Channel power MOSFETs as the main and the synchronous switches. These should be selected based in rDS(ON), gate supply requirements and thermal management requirements. = 0.875μH 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2008. All Rights Reserved All other trademarks mentioned are the property of their respective owners. Application Note 1288 The total power loss in MOSFET consists of conduction loss and switching loss, as shown in Equation 5: P MOSFET ( TOT ) = P cond + P sw Hence, the required ON-resistance of the high-side MOSFET is 7.3mΩ. Infineon’s BSC080N03LS is selected. The conduction loss in the high-side MOSFET is calculated using Equation 11: (EQ. 5) 2 P HFET ( cond ) = I H ( RMS ) ⋅ r DS ( ON ) In this relatively small duty cycle design, the low-side MOSFET conducts current most of the time. To optimize the converter efficiency, select the high-side MOSFET with low gate charge for fast switching transition and low-side MOSFET with low rDS(ON). To achieve the target efficiency, the budget power losses in high-side and low-side MOSFETs are 0.5W and 1W, respectively. LOW-SIDE MOSFET SELECTION The low-side MOSFET’s RMS current is approximated in Equation 6: 2 1 ⎛ ΔI L ⎞ I L ( RMS ) = I OUT ⋅ 1 – D ⋅ 1 + ------ ⋅ ⎜ -------------⎟ ≈ 13.9A 12 ⎝ I OUT⎠ 2 = 0.58W (EQ. 7) The switching loss in the low-side MOSFET is dominated by the loss in body diode which can be calculated using Equation 8: (EQ. 8) Where tD is the total dead time in each switching period (~60µs) and VF is the forward voltage drop of MOSFET’s body diode. The total power dissipation in the low-side MOSFET is calculated using Equation 9: P LFET ( TOT ) = 0.88W 2 1 1 P HFET ( SW ) = --- ⋅ I O ⋅ V IN ⋅ t tr ⋅ F SW + --- ⋅ C OSS ⋅ V IN ⋅ F SW 2 2 = 0.17W (EQ. 12) where ttr is the combined ON and OFF MOSFET transition times. The total power dissipation in high-side MOSFET is shown in Equation 13: P HFET ( TOT ) = 0.44W (EQ. 13) Overcurrent Protection Setting LFET P diode = I O ⋅ t D ⋅ V F ⋅ F SW = 0.3W The switching loss in the high-side MOSFET can be approximated using Equation 12: (EQ. 6) Therefore, the ON-resistance of the low-side MOSFET must be less than 5mΩ. Infineon’s BSC030N03LS is employed in the ISL8105BEVAL1Z, ISL8105BEVAL2Z evaluation board. The conduction loss in the low-side MOSFET is calculated using Equation 7: P LFET ( cond ) = I L ( RMS ) ⋅ r DS ( ON ) (EQ. 11) = 0.27W HFET (EQ. 9) The overcurrent function protects the converter from a shorted output by using the low-side MOSFET’s rDS(ON) to monitor the current. A resistor, RBSOC, programs the overcurrent trip level. If overcurrent is detected, the output immediately shuts off, it cycles the soft-start function in a hiccup mode (2 dummy soft-start time-outs, then up to one real one) to provide fault protection. If the shorted condition is not removed, this cycle will continue indefinitely. The overcurrent function will trip at a inductor current (Itrip) is determined using Equation 14: 2 • I OCSET • R BSOC I trip = --------------------------------------------------------r DS ( ON ) (EQ. 14) where IOCSET is the internal 21.5µA (typ.) OCSET current source. The OC trip point varies mainly due to the MOSFET’s rDS(ON) variations. To avoid overcurrent tripping in the normal operating load range, calculate the RBSOC resistor from Equation 14 using: 1. The maximum rDS(ON) at the highest junction temperature. HIGH-SIDE MOSFET SELECTION For the high-side MOSFET selection, first we assume that the conduction loss and the switching loss contribute evenly to the total power dissipation. 2. The minimum IOCSET from the specification table of the datasheet. Determine Itrip for Itrip > IOUT(MAX) + (ΔI)/2, where ΔI is the output inductor ripple current. The high-side MOSFET’s RMS current is approximated using Equation 10: 2 1 ⎛ ΔI L ⎞ I H ( rms ) = I OUT ⋅ D ⋅ 1 + ------ ⋅ ⎜ -------------⎟ ≈ 5.85A 12 ⎝ I OUT⎠ 2 (EQ. 10) AN1288.1 October 30, 2008 Application Note 1288 With Infineon’s BSC030N03LS as the low-side MOSFET and RBSOC of 1.74kΩ. The overcurrent trip point on the evaluation board has been set to 21A for 12VBIAS (17A for 5VBIAS). R2 C3 R3 C1 C1 C 2 = -----------------------------------------------------------2π ⋅ R 2 ⋅ C 1 ⋅ F ESR – 1 R1 FB + 5. Select R3 such that FZ2 is located at FLC: VOUT OSCILLATOR VIN VOSC TGATE HALF-BRIDGE DRIVE L DCR LX BGATE ISL8105B (EQ. 19) ≈ 390pF R4 VREF PWM CIRCUIT (EQ. 18) 4. Select C2 such that FP1 is located at FESR: E/A 1 C 1 = -------------------------------------------3 2π ⋅ R 2 ⋅ 1.5 ×10 ≈ 10nF C2 COMP 3. Select C1 such that FZ1 is located at 1.5kHz (~50% of FLC): C ESR R1 R 3 = -------------------------------- ≈ 301Ω 3 150 ×10 ---------------------- – 1 F LC (EQ. 20) 1 C 3 = ---------------------------------------------- ≈ 3.3nF 3 2π ⋅ R 3 ⋅ 150 ×10 A more detailed explanation of designing compensation networks for buck converters with voltage mode control can be found in TB417 entitled “Designing Stable Compensation Networks for Single Phase Voltage Mode Buck Regulators”. Evaluation Board Performance Figure 2 shows a photograph of the ISL8105BEVAL1Z. EXTERNAL CIRCUIT FIGURE 1. VOLTAGE-MODE BUCK CONVERTER COMPENSATION DESIGN Feedback Compensator Type-III network is recommended for compensating the feedback loop. Figure 1 shows Type-III compensation configuration for ISL8105B. With the inductor and output capacitor selected as described in the previous sections, the poles and zero of the power stage can be summarized in Equation 15: 1 F 0 = ------------------------------------- = 3.7kHz 2×π× L×C 1 F ESR = ------------------------------------------- = 33.9kHz 2 × π × C × ESR (EQ. 15) FIGURE 2. ISL8105BEVAL1Z 1. With a value of 11.8kΩ for R1, select R4 for the target output voltage of 1.8V using Equation 16: V ref R 4 = R 1 × --------------------------------V –V OUT (EQ. 16) ref = 5.9kΩ 2. With the desired feedback loop bandwidth of 30kHz, R2 can be calculated using Equation 17: V OSC ⋅ R 1 ⋅ F 0 R 2 = -------------------------------------------d max ⋅ V IN ⋅ F LC (EQ. 17) = 12kΩ 3 Power and Load Connections Terminals J1 and J2 are connected to the input of the power stage. The IC bias supply and the converter input supply can be together through pin 2 and 3 of the Jumper J7 to provide single rail supply application. When using separate supplies, provide the IC bias voltage to terminal J2 with pin 2 and pin 1 of J7 connected together. The load can be connected to terminal J4 and J5. TP6 and TP3 can be used for DMM to measure output voltage. The scope probe terminal (TPV01) can be used to monitor VOUT with an oscilloscope. The push switch, SW1, can be used to disable the controller. AN1288.1 October 30, 2008 Application Note 1288 Start-up Output Ripple The ISL8105B starts up when VBIAS rises above POR threshold and the COMP/EN rises above VDISABLE level. The entire start-up time sequence from POR typically takes up to 23.8ms; up to 10.2ms for the delay and the Overcurrent Protection (OCP) sample and hold operation. The initial delay is added to allow the bias voltage to rise/exceed 6.5V, so that the internal bias regulator can turn on cleanly. When the OCP sampling and hold operations are done, the soft-start function internally ramps the reference on the non-inverting terminal of the error amp from 0V to 0.6V in 13.6ms (typ). Figure 5 shows the ripple voltage on the output of the regulator. Figure 3 shows the start-up profile of the ISL8105BEVAL1Z, ISL8105BEVAL2Z in relation to the start-up of the 12V input supply and the bias supply. VIN = 12V, VOUT = 1.8V, IOUT = 15A COMP FIGURE 5. OUTPUT RIPPLE (20MHz BW) VOUT Verifying Loop Gain IL Figure 6 shows the measurement of loop gain of the converter with feedback network design in the previous sections. LX FIGURE 3. SOFT-START Soft-Start with Pre-Biased Output If the output is pre-biased to a voltage less than the expected value, the ISL8105BEVAL1Z, ISL8105BEVAL2Z will detect that condition. Neither MOSFETs will turn on until the soft-start ramp voltage exceeds the FB voltage; VOUT starts seamlessly ramping from there. VIN = 12V, VOUT = 1.8V, IOUT = 1A Vout FIGURE 6. LOOP GAIN MEASUREMENT AT +25°C COMP Lx FIGURE 4. SOFT-START WITH PRE-BIASED OUTPUT 4 AN1288.1 October 30, 2008 Application Note 1288 Transient Performance 95 Figures 7, 8, and 9 show the response of the output when subjected to transient loading from 0A to 15A at 1A/µs. 90 EFFICIENCY (%) 85 IL 80 75 70 65 60 VOUT 55 50 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 LOAD CURRENT (A) FIGURE 10. EVALUATION BOARD EFFICIENCY (VOUT = 1.8V) FIGURE 7. TRANSIENT RESPONSE OUTPUT VOLTAGE (V) 1.800 1.798 1.796 1.794 1.792 1.790 0 1 2 FIGURE 8. TRANSIENT RESPONSE 3 4 5 6 7 8 9 10 11 12 13 14 15 OUTPUT CURRENT (A) FIGURE 11. EVALUATION BOARD LINE REGUALTION References For Intersil documents available on the web, go to http://www.intersil.com/. 1. ISL8105, ISL8105B Data Sheet, FN6306, “+5V or +12V Single-Phase Synchronous Buck Converter PWM Controller with Integrated MOSFET Gate Drivers”, Intersil Corporation FIGURE 9. TRANSIENT RESPONSE 2. Tech Brief TB417, “Designing Stable Compensation Networks for Single Phase Voltage Mode Buck Regulators”, Intersil Corporation Efficiency ISL8105BEVAL1Z, ISL8105BEVAL2Z based regulators enable the design of highly efficient systems. The efficiency of the evaluation board using a 12V input supply is shown in Figure 10. 5 AN1288.1 October 30, 2008 ISL8105BEVAL1Z Schematic TP9 J1 VIN 6 C12 + 330uF C11 + 330uF C10 1uF C9 1uF 330uF 1 + J2 C13 + 2 TP2 C4 1.0uF 1 COMP/EN TGATE 2 TGATE FB 6 FB LX 8 LX 3 GND BGATE/BSOC 4 TP10GND J6 TP8 Q2 DNP 4 R6 4.7 Q5 DNP 4 Q6 DNP 1 2 3 J3 1 2 3 J4 VOUT 1 VOUT Q3 R5 1.74k 3 TP6 L1 1uH 2 BGATE ISL8105B 2 C24 DNP DNP Q1 5 7 4 1 2 3 COMP/EN C5 0.1uF BOOT 5 VBIAS SW1 C22 DNP C25 DNP Q4 5 4 C20 470uF C23 DNP Application Note 1288 VBIAS C21 470uF 5 BOOT U1 TP7 1 C18 470uF + VBIAS C19 470uF + 3 J7 + VIN R7 DNP + C6 C15 + DNP DNP + C8 680pF C14 C28 0.1uF DNP + DNP C17 C16 C27 0.1uF DNP J5 GND GND TP3 TP4 R1 11.8k C3 3.3nF R2 12k R4 5.9k R3 301 Probe Socket 2 TPVO1 4 C26 DNP 3 C1 10nF C7 DNP 1 C2 390pF R8 DNP Intersil Corporation 1001 Murphy Ranch Rd. Milpitas, CA, 95035 Size Title AN1288.1 October 30, 2008 Rev A ISL8105BEVAL1Z Date: Thursday, January 31, 2008 Sheet 1 of 1 Application Note 1288 ISL8105BEVAL1Z Bill of Materials ID REFERENCE QTY PART NUMBER 1 U1 1 ISL8105BIBZ 2 Q1 1 PART TYPE IC, Linear DESCRIPTION PACKAGE VENDOR IC, Single PWM Controller 8 LD SOIC Intersil BSC080N30LS G MOSFET 30V N-Channel MOSFET TDSON-08 Infineon BSC030N03LS G MOSFET 30V N-Channel MOSFET TDSON-08 Infineon SMD 3 Q3 1 4 Q2, Q4, Q5, Q6 DNP 5 L1 1 HC9-1R0-R Inductor 1.0µH, high current inductor 6 SW1 1 EVQ-PAD04M Push Switch SWITCH-PUSH, TH, 6mm, 1P, PUSHB MOM-SPST 7 C1 1 Capacitor, Ceramic, 10nF, 50V, 10%, ROHS X7R SM_0603 TDK/Generic 8 C2 1 Capacitor, Ceramic, 390pF, 50V, 10%, ROHS X7R SM_0603 TDK/Generic 9 C3 1 Capacitor, Ceramic, 3.3nF, 50V, 10%, ROHS X7R SM_0603 TDK/Generic 10 C4, C9, C10 3 Capacitor, Ceramic, 1µF, 25V, 10%, X7R, ROHS X7R SM_0805 TDK/Generic 11 C5, C27, C28 3 Capacitor, Ceramic, 0.1µF, 16V, 10%, ROHS X7R SM_0603 TDK/Generic 12 C8 1 Capacitor, Ceramic, 680pF, 50V, 10%, ROHS X7R SM_0603 TDK/Generic 13 C11, C12, C13 3 35ME330AX Aluminum Capacitor 330µF, 35V RAD 10x20 Sanyo 14 C18, C19, C20, C21 4 2R5TPF470ML Organic Alumium Capacitor 470µF, 2.5V, 20%, ROHS Case D3L Sanyo MOSFET Cooper Bussmann PANASONIC CAPACITORS 15 C6, C7, C14, C15, C16, C17, DNP C22, C23, C24, C25, C26 RESISTORS 16 R1 1 Resistor, Film 11.8kΩ, 1%, 1/16W SM_0603 Panasonic/Generic 17 R2 1 Resistor, Film 12kΩ, 1%, 1/16W SM_0603 Panasonic/Generic 18 R3 1 Resistor, Film 301Ω, 1%, 1/16W SM_0603 Panasonic/Generic 19 R4 1 Resistor, Film 5.9kΩ, 1%, 1/16W SM_0603 Panasonic/Generic 20 R5 1 Resistor, Film 1.74kΩ, 1%, 1/16W SM_0603 Panasonic/Generic 21 R6 1 Resistor, Film 4.7Ω, 1%, 1/16W SM_0603 Panasonic/Generic 22 R7, R8 DNP 23 TPVO1 DNP 24 J1, J4 2 25 J3, J5 26 SM_0603 OTHERS Terminal, Scope Probe CONN-PIN RECEPTACLE, 0.086 DIA, 0.200 L, ROHS MILL-MAX 111-0702-001 Blinding Post CONN-GEN, BIND. POST, RED, THMBNUT-GND JOHNSON COMPONENTS 2 111-0703-001 Blinding Post CONN-GEN, BIND. POST, BLACK, THMBNUT-GND JOHNSON COMPONENTS J2, J6 2 1514-2 Turrett Post CONN-TURRET, TERMINAL POST, TH, ROHS Keystone 27 J7 1 68000-236-1X3 3-pin Jumper Berg/FCI 28 TP3, TP6, TP9, TP10 4 5002 Test Point CONN-MINI TEST POINT, VERTICAL, WHITE, ROHS Keystone 29 TP2, TP4, TP7, TP8 DNP 5002 Test Point CONN-MINI TEST POINT, VERTICAL, WHITE, ROHS Keystone 7 AN1288.1 October 30, 2008 Application Note 1288 ISL8105BEVAL1Z Printed Circuit Board Layers FIGURE 12. ISL8105BEVAL1Z - TOP LAYER (SILKSCREEN) FIGURE 14. ISL8105BEVAL1Z - LAYER 2 FIGURE 16. ISL8105BEVAL1Z - BOTTOM LAYER 8 FIGURE 13. ISL8105BEVAL1Z - TOP LAYER (COMPONENT SIDE) FIGURE 15. ISL8105BEVAL1Z - LAYER 3 FIGURE 17. ISL8105BEVAL1Z - BOTTOM LAYER (SOLDER SIDE) AN1288.1 October 30, 2008 ISL8105BEVAL2Z Schematic TP9 J1 VIN C13 + C11 + 330uF C10 1uF C9 1uF 330uF 1 + J2 C12 + 330uF 2 TP2 C18 470uF + C4 1.0uF C5 C19 470uF + 3 J7 + C21 470uF C20 470uF C23 DNP C22 DNP C25 DNP C24 DNP 0.1uF VBIAS TP7 VBIAS 6 VBIAS BOOT 1 BOOT TGATE 2 TGATE 5 9 VIN Q4 TP8 SW1 FB 4 GND 10 ISL8105B DFN LX LX 2 Q2 5 BGATE BGATE/BSOC DNP NC2 3 R5 1.74k 4 R6 4.7 Q5 DNP 4 1 2 3 11 NC1 Q6 DNP 1 2 3 7 J3 J4 VOUT 1 VOUT Q3 3 EP TP10GND J6 2 8 5 FB 4 L1 1uH 1 2 3 U1 1 TP6 Q1 5 COMP/EN 4 Application Note 1288 DNP COMP/EN 9 R7 DNP + C6 C15 + DNP DNP + C8 680pF C14 C17 C28 0.1uF DNP + DNP C16 C27 0.1uF DNP J5 GND TP4 R1 11.8k C3 3.3nF R2 12k R4 5.9k R3 301 Probe Socket 2 TPVO1 4 C26 DNP 3 C1 10nF GND TP3 C7 DNP 1 C2 390pF R8 DNP Intersil Corporation 1001 Murphy Ranch Rd. Milpitas, CA, 95035 Size Title Rev A ISL8105BEVAL2Z AN1288.1 October 30, 2008 Date: Friday, July 11, 2008 Sheet 1 of 1 Application Note 1288 ISL8105BEVAL2Z Bill of Materials ID REFERENCE QTY PART NUMBER 1 U1 1 ISL8105BIRZ 2 Q1 1 PART TYPE IC, Linear DESCRIPTION PACKAGE VENDOR IC, Single PWM Controller 10 LD DFN Intersil BSC080N30LS G MOSFET 30V N-Channel MOSFET TDSON-08 Infineon BSC030N03LS G MOSFET 30V N-Channel MOSFET TDSON-08 Infineon SMD 3 Q3 1 4 Q2, Q4, Q5, Q6 DNP 5 L1 1 HC9-1R0-R Inductor 1.0µH, high current inductor 6 SW1 1 EVQ-PAD04M Push Switch SWITCH-PUSH, TH, 6mm, 1P, PUSHB MOM-SPST 7 C1 1 Capacitor, Ceramic, 10nF, 50V, 10%, ROHS X7R SM_0603 TDK/Generic 8 C2 1 Capacitor, Ceramic, 390pF, 50V, 10%, ROHS X7R SM_0603 TDK/Generic 9 C3 1 Capacitor, Ceramic, 3.3nF, 50V, 10%, ROHS X7R SM_0603 TDK/Generic 10 C4, C9, C10 3 Capacitor, Ceramic, 1µF, 25V, 10%, X7R, ROHS X7R SM_0805 TDK/Generic 11 C5, C27, C28 3 Capacitor, Ceramic, 0.1µF, 16V, 10%, ROHS X7R SM_0603 TDK/Generic 12 C8 1 Capacitor, Ceramic, 680pF, 50V, 10%, ROHS X7R SM_0603 TDK/Generic 13 C11, C12, C13 3 35ME330AX Aluminum Capacitor 330µF, 35V RAD 10x20 Sanyo 14 C18, C19, C20, C21 4 2R5TPF470ML Organic Alumium Capacitor 470µF, 2.5V, 20%, ROHS Case D3L Sanyo MOSFET Cooper Bussmann PANASONIC CAPACITORS 15 C6, C7, C14, C15, C16, C17, DNP C22, C23, C24, C25, C26 RESISTORS 16 R1 1 Resistor, Film 11.8kΩ, 1%, 1/16W SM_0603 Panasonic/Generic 17 R2 1 Resistor, Film 12kΩ, 1%, 1/16W SM_0603 Panasonic/Generic 18 R3 1 Resistor, Film 301Ω, 1%, 1/16W SM_0603 Panasonic/Generic 19 R4 1 Resistor, Film 5.9kΩ, 1%, 1/16W SM_0603 Panasonic/Generic 20 R5 1 Resistor, Film 1.74kΩ, 1%, 1/16W SM_0603 Panasonic/Generic 21 R6 1 Resistor, Film 4.7Ω, 1%, 1/16W SM_0603 Panasonic/Generic 22 R7, R8 DNP 23 TPVO1 DNP 24 J1, J4 2 25 J3, J5 26 SM_0603 OTHERS Terminal, Scope Probe CONN-PIN RECEPTACLE, 0.086 DIA, 0.200 L, ROHS MILL-MAX 111-0702-001 Blinding Post CONN-GEN, BIND. POST, RED, THMBNUT-GND JOHNSON COMPONENTS 2 111-0703-001 Blinding Post CONN-GEN, BIND. POST, BLACK, THMBNUT-GND JOHNSON COMPONENTS J2, J6 2 1514-2 Turrett Post CONN-TURRET, TERMINAL POST, TH, ROHS Keystone 27 J7 1 68000-236-1X3 3-pin Jumper Berg/FCI 28 TP3, TP6, TP9, TP10 4 5002 Test Point CONN-MINI TEST POINT, VERTICAL, WHITE, ROHS Keystone 29 TP2, TP4, TP7, TP8 DNP 5002 Test Point CONN-MINI TEST POINT, VERTICAL, WHITE, ROHS Keystone 10 AN1288.1 October 30, 2008 Application Note 1288 ISL8105BEVAL2Z Printed Circuit Board Layers FIGURE 18. ISL8105BEVAL2Z - TOP LAYER (SILKSCREEN) FIGURE 20. ISL8105BEVAL2Z - LAYER 2 FIGURE 22. ISL8105BEVAL2Z - BOTTOM LAYER FIGURE 19. ISL8105BEVAL2Z - TOP LAYER (COMPONENT SIDE) FIGURE 21. ISL8105BEVAL2Z - LAYER 3 FIGURE 23. ISL8105BEVAL2Z - BOTTOM LAYER (SOLDER SIDE) Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that the Application Note or Technical Brief is current before proceeding. For information regarding Intersil Corporation and its products, see www.intersil.com 11 AN1288.1 October 30, 2008

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