an1288

Using the ISL8105BEVAL1Z, ISL8105BEVAL2Z
PWM Controller Evaluation Board
®
Application Note
Introduction
The ISL8105B is a simple single-phase PWM controller for a
synchronous buck converter that operates from +5V or +12V
bias supply voltage. With integrated linear regulator, boot diode,
and gate drivers, the ISL8105B reduces external component
count and board space requirements.
The ISL8105BEVAL1Z, ISL8105BEVAL2Z evaluation board
highlights the operations of the controller in a DC/DC
application.
ISL8105BEVAL1Z , ISL8105BEVAL2Z
Reference Design
TABLE 1. ISL8105BEVAL1Z, ISL8105BEVAL2Z EVALUATION
BOARD DESIGN PARAMETERS
Input Voltage (VIN)
MIN
TYP
MAX
9.6V
12V
14.4V
Output Voltage (VOUT)
1.8V
Output Voltage Ripple (VRIPPLE)
30mVP-P
Continuous Load Current
15A
Efficiency
90
Two versions of the evaluation board, based on the package
type, are listed in Table 2.
TABLE 2. EVALUATION BOARDS
BOARD NAME
AN1288.1
In the evaluation board, a 1µH inductor with 1.87mΩ DCR
(Cooper Bussmmann’s HC9-1R0-R) is employed. This yields
approximately 0.44W conduction loss in the inductor.
Output Capacitor Selection
The output capacitors are generally selected by the output
voltage ripple and load transient response requirements.
ESR and capacitor charge are major contributions to the
output voltage ripple. Assuming that the total output
capacitance is sufficient, then the output voltage ripple is
dominated by the ESR, which can be calculated using
Equation 2.
(EQ. 2)
V RIPPLE = ΔI L ⋅ ESR
The ISL8105BEVAL1Z, ISL8105BEVAL2Z evaluation board
is designed to optimize for the output voltage and current
specifications shown in Table 1.
PARAMETER
October 30, 2008
IC
PACKAGE
ISL8105BEVAL1Z
ISL8105BIBZ
8 Ld SOIC
ISL8105BEVAL2Z
ISL8105BIRZ
10 Ld DFN
To meet the 30mVP-P output voltage ripple requirement, the
effective ESR should be less than 5mΩ.
The output voltage response to a transient load is
contributed from ESL, ESR and the amount of output
capacitance. With VIN>>VOUT, the amplitude of the voltage
excursions can be approximated using Equation 3:
2
L ⋅ I tran
ΔV = ------------------------------------C OUT ⋅ V OUT
With 1µH inductor and 0A to 15A step load, the total output
capacitance of 1560µF is required for 80mV output voltage
transient. In the ISL8105BEVAL1Z, ISL8105BEVAL2Z
evaluation board, four of Sanyo’s 2R5TPF470ML are
employed.
Input Capacitor Selection
The input bulk capacitors selection criteria are based on the
capacitance and RMS current capability. The RMS current
rating requirement for the input capacitor is approximated in
Equation 4:
I IN, RMS =
Design Procedure
(EQ. 3)
ΔI 2
I O 2 ( D – D 2 ) + -------- D
12
VO
D = ---------VIN
(EQ. 4)
The following sections illustrate simple design steps and
component selections for a converter using the
ISL8105BEVAL1Z, ISL8105BEVAL2Z.
In this application, the RMS current for the input capacitors is
5.4A; therefore, three of Sanyo’s 35ME330AX are used.
Output Inductor Selection
Small ceramic capacitors for high frequency decoupling are
also required to control the voltage overshoot across the
MOSFETs.
The output inductor is chosen by the desired inductor ripple
current, which is typically set to be approximately 40% of the
rated output current. The desired output inductor can be
calculated using Equation 1:
V IN – V OUT V OUT
1
L = -------------------------------- × ---------------- × -----------V IN
ΔI
F SW
(EQ. 1)
14.4 – 1.8 1.8
1
= -------------------------- × ----------- × ---------------------3
0.4 ⋅ 15
14.4
300 ×10
MOSFET Selection
The ISL8105B requires two N-Channel power MOSFETs as
the main and the synchronous switches. These should be
selected based in rDS(ON), gate supply requirements and
thermal management requirements.
= 0.875μH
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2008. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
Application Note 1288
The total power loss in MOSFET consists of conduction loss
and switching loss, as shown in Equation 5:
P MOSFET ( TOT ) = P cond + P sw
Hence, the required ON-resistance of the high-side MOSFET is
7.3mΩ. Infineon’s BSC080N03LS is selected. The conduction
loss in the high-side MOSFET is calculated using Equation 11:
(EQ. 5)
2
P HFET ( cond ) = I H ( RMS ) ⋅ r DS ( ON )
In this relatively small duty cycle design, the low-side
MOSFET conducts current most of the time. To optimize the
converter efficiency, select the high-side MOSFET with low
gate charge for fast switching transition and low-side
MOSFET with low rDS(ON).
To achieve the target efficiency, the budget power losses in
high-side and low-side MOSFETs are 0.5W and 1W,
respectively.
LOW-SIDE MOSFET SELECTION
The low-side MOSFET’s RMS current is approximated in
Equation 6:
2
1 ⎛ ΔI L ⎞
I L ( RMS ) = I OUT ⋅ 1 – D ⋅ 1 + ------ ⋅ ⎜ -------------⎟ ≈ 13.9A
12 ⎝ I OUT⎠
2
= 0.58W
(EQ. 7)
The switching loss in the low-side MOSFET is dominated by
the loss in body diode which can be calculated using
Equation 8:
(EQ. 8)
Where tD is the total dead time in each switching period
(~60µs) and VF is the forward voltage drop of MOSFET’s
body diode.
The total power dissipation in the low-side MOSFET is
calculated using Equation 9:
P LFET ( TOT ) = 0.88W
2
1
1
P HFET ( SW ) = --- ⋅ I O ⋅ V IN ⋅ t tr ⋅ F SW + --- ⋅ C OSS ⋅ V IN ⋅ F SW
2
2
= 0.17W
(EQ. 12)
where ttr is the combined ON and OFF MOSFET transition
times.
The total power dissipation in high-side MOSFET is shown in
Equation 13:
P HFET ( TOT ) = 0.44W
(EQ. 13)
Overcurrent Protection Setting
LFET
P diode = I O ⋅ t D ⋅ V F ⋅ F SW = 0.3W
The switching loss in the high-side MOSFET can be
approximated using Equation 12:
(EQ. 6)
Therefore, the ON-resistance of the low-side MOSFET must
be less than 5mΩ. Infineon’s BSC030N03LS is employed in
the ISL8105BEVAL1Z, ISL8105BEVAL2Z evaluation board.
The conduction loss in the low-side MOSFET is calculated
using Equation 7:
P LFET ( cond ) = I L ( RMS ) ⋅ r DS ( ON )
(EQ. 11)
= 0.27W
HFET
(EQ. 9)
The overcurrent function protects the converter from a shorted
output by using the low-side MOSFET’s rDS(ON) to monitor
the current. A resistor, RBSOC, programs the overcurrent trip
level. If overcurrent is detected, the output immediately shuts
off, it cycles the soft-start function in a hiccup mode (2 dummy
soft-start time-outs, then up to one real one) to provide fault
protection. If the shorted condition is not removed, this cycle
will continue indefinitely.
The overcurrent function will trip at a inductor current (Itrip) is
determined using Equation 14:
2 • I OCSET • R BSOC
I trip = --------------------------------------------------------r DS ( ON )
(EQ. 14)
where IOCSET is the internal 21.5µA (typ.) OCSET current
source.
The OC trip point varies mainly due to the MOSFET’s rDS(ON)
variations. To avoid overcurrent tripping in the normal operating
load range, calculate the RBSOC resistor from Equation 14
using:
1. The maximum rDS(ON) at the highest junction temperature.
HIGH-SIDE MOSFET SELECTION
For the high-side MOSFET selection, first we assume that
the conduction loss and the switching loss contribute evenly
to the total power dissipation.
2. The minimum IOCSET from the specification table of the
datasheet.
Determine Itrip for Itrip > IOUT(MAX) + (ΔI)/2, where ΔI is the
output inductor ripple current.
The high-side MOSFET’s RMS current is approximated
using Equation 10:
2
1 ⎛ ΔI L ⎞
I H ( rms ) = I OUT ⋅ D ⋅ 1 + ------ ⋅ ⎜ -------------⎟ ≈ 5.85A
12 ⎝ I OUT⎠
2
(EQ. 10)
AN1288.1
October 30, 2008
Application Note 1288
With Infineon’s BSC030N03LS as the low-side MOSFET and
RBSOC of 1.74kΩ. The overcurrent trip point on the evaluation
board has been set to 21A for 12VBIAS (17A for 5VBIAS).
R2
C3
R3
C1
C1
C 2 = -----------------------------------------------------------2π ⋅ R 2 ⋅ C 1 ⋅ F ESR – 1
R1
FB
+
5. Select R3 such that FZ2 is located at FLC:
VOUT
OSCILLATOR
VIN
VOSC
TGATE
HALF-BRIDGE
DRIVE
L
DCR
LX
BGATE
ISL8105B
(EQ. 19)
≈ 390pF
R4
VREF
PWM
CIRCUIT
(EQ. 18)
4. Select C2 such that FP1 is located at FESR:
E/A
1
C 1 = -------------------------------------------3
2π ⋅ R 2 ⋅ 1.5 ×10
≈ 10nF
C2
COMP
3. Select C1 such that FZ1 is located at 1.5kHz (~50% of
FLC):
C
ESR
R1
R 3 = -------------------------------- ≈ 301Ω
3
150 ×10
---------------------- – 1
F LC
(EQ. 20)
1
C 3 = ---------------------------------------------- ≈ 3.3nF
3
2π ⋅ R 3 ⋅ 150 ×10
A more detailed explanation of designing compensation
networks for buck converters with voltage mode control can
be found in TB417 entitled “Designing Stable Compensation
Networks for Single Phase Voltage Mode Buck Regulators”.
Evaluation Board Performance
Figure 2 shows a photograph of the ISL8105BEVAL1Z.
EXTERNAL CIRCUIT
FIGURE 1. VOLTAGE-MODE BUCK CONVERTER
COMPENSATION DESIGN
Feedback Compensator
Type-III network is recommended for compensating the
feedback loop. Figure 1 shows Type-III compensation
configuration for ISL8105B.
With the inductor and output capacitor selected as described
in the previous sections, the poles and zero of the power
stage can be summarized in Equation 15:
1
F 0 = ------------------------------------- = 3.7kHz
2×π× L×C
1
F ESR = ------------------------------------------- = 33.9kHz
2 × π × C × ESR
(EQ. 15)
FIGURE 2. ISL8105BEVAL1Z
1. With a value of 11.8kΩ for R1, select R4 for the target
output voltage of 1.8V using Equation 16:
V ref
R 4 = R 1 × --------------------------------V
–V
OUT
(EQ. 16)
ref
= 5.9kΩ
2. With the desired feedback loop bandwidth of 30kHz, R2
can be calculated using Equation 17:
V OSC ⋅ R 1 ⋅ F 0
R 2 = -------------------------------------------d max ⋅ V IN ⋅ F LC
(EQ. 17)
= 12kΩ
3
Power and Load Connections
Terminals J1 and J2 are connected to the input of the power
stage. The IC bias supply and the converter input supply can
be together through pin 2 and 3 of the Jumper J7 to provide
single rail supply application. When using separate supplies,
provide the IC bias voltage to terminal J2 with pin 2 and pin 1
of J7 connected together. The load can be connected to
terminal J4 and J5. TP6 and TP3 can be used for DMM to
measure output voltage. The scope probe terminal (TPV01)
can be used to monitor VOUT with an oscilloscope. The push
switch, SW1, can be used to disable the controller.
AN1288.1
October 30, 2008
Application Note 1288
Start-up
Output Ripple
The ISL8105B starts up when VBIAS rises above POR
threshold and the COMP/EN rises above VDISABLE level. The
entire start-up time sequence from POR typically takes up to
23.8ms; up to 10.2ms for the delay and the Overcurrent
Protection (OCP) sample and hold operation. The initial delay
is added to allow the bias voltage to rise/exceed 6.5V, so that
the internal bias regulator can turn on cleanly. When the OCP
sampling and hold operations are done, the soft-start function
internally ramps the reference on the non-inverting terminal of
the error amp from 0V to 0.6V in 13.6ms (typ).
Figure 5 shows the ripple voltage on the output of the
regulator.
Figure 3 shows the start-up profile of the ISL8105BEVAL1Z,
ISL8105BEVAL2Z in relation to the start-up of the 12V input
supply and the bias supply.
VIN = 12V, VOUT = 1.8V, IOUT = 15A
COMP
FIGURE 5. OUTPUT RIPPLE (20MHz BW)
VOUT
Verifying Loop Gain
IL
Figure 6 shows the measurement of loop gain of the
converter with feedback network design in the previous
sections.
LX
FIGURE 3. SOFT-START
Soft-Start with Pre-Biased Output
If the output is pre-biased to a voltage less than the expected
value, the ISL8105BEVAL1Z, ISL8105BEVAL2Z will detect
that condition. Neither MOSFETs will turn on until the
soft-start ramp voltage exceeds the FB voltage; VOUT starts
seamlessly ramping from there.
VIN = 12V, VOUT = 1.8V, IOUT = 1A
Vout
FIGURE 6. LOOP GAIN MEASUREMENT AT +25°C
COMP
Lx
FIGURE 4. SOFT-START WITH PRE-BIASED OUTPUT
4
AN1288.1
October 30, 2008
Application Note 1288
Transient Performance
95
Figures 7, 8, and 9 show the response of the output when
subjected to transient loading from 0A to 15A at 1A/µs.
90
EFFICIENCY (%)
85
IL
80
75
70
65
60
VOUT
55
50
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
LOAD CURRENT (A)
FIGURE 10. EVALUATION BOARD EFFICIENCY (VOUT = 1.8V)
FIGURE 7. TRANSIENT RESPONSE
OUTPUT VOLTAGE (V)
1.800
1.798
1.796
1.794
1.792
1.790
0
1
2
FIGURE 8. TRANSIENT RESPONSE
3
4
5
6
7
8
9 10 11 12 13 14 15
OUTPUT CURRENT (A)
FIGURE 11. EVALUATION BOARD LINE REGUALTION
References
For Intersil documents available on the web, go to
http://www.intersil.com/.
1. ISL8105, ISL8105B Data Sheet, FN6306, “+5V or +12V
Single-Phase Synchronous Buck Converter PWM
Controller with Integrated MOSFET Gate Drivers”, Intersil
Corporation
FIGURE 9. TRANSIENT RESPONSE
2. Tech Brief TB417, “Designing Stable Compensation
Networks for Single Phase Voltage Mode Buck
Regulators”, Intersil Corporation
Efficiency
ISL8105BEVAL1Z, ISL8105BEVAL2Z based regulators
enable the design of highly efficient systems. The efficiency
of the evaluation board using a 12V input supply is shown in
Figure 10.
5
AN1288.1
October 30, 2008
ISL8105BEVAL1Z Schematic
TP9
J1
VIN
6
C12
+
330uF
C11
+
330uF
C10
1uF
C9
1uF
330uF
1
+
J2
C13
+
2
TP2
C4
1.0uF
1
COMP/EN
TGATE
2
TGATE
FB
6
FB
LX
8
LX
3
GND
BGATE/BSOC
4
TP10GND
J6
TP8
Q2
DNP
4
R6
4.7
Q5
DNP
4
Q6
DNP
1
2
3
J3
1
2
3
J4
VOUT
1
VOUT
Q3
R5
1.74k
3
TP6
L1
1uH
2
BGATE
ISL8105B
2
C24
DNP
DNP
Q1
5
7
4
1
2
3
COMP/EN
C5
0.1uF
BOOT
5
VBIAS
SW1
C22
DNP
C25
DNP
Q4
5
4
C20
470uF
C23
DNP
Application Note 1288
VBIAS
C21
470uF
5
BOOT
U1
TP7
1
C18
470uF
+
VBIAS
C19
470uF
+
3
J7
+
VIN
R7
DNP
+
C6
C15
+
DNP
DNP
+
C8
680pF
C14
C28
0.1uF
DNP
+
DNP
C17
C16
C27
0.1uF
DNP
J5
GND
GND
TP3
TP4
R1
11.8k
C3
3.3nF
R2
12k
R4
5.9k
R3
301
Probe Socket 2
TPVO1
4
C26
DNP
3
C1
10nF
C7
DNP
1
C2
390pF
R8
DNP
Intersil Corporation
1001 Murphy Ranch Rd.
Milpitas, CA, 95035
Size
Title
AN1288.1
October 30, 2008
Rev
A
ISL8105BEVAL1Z
Date:
Thursday, January 31, 2008
Sheet
1
of
1
Application Note 1288
ISL8105BEVAL1Z Bill of Materials
ID
REFERENCE
QTY
PART NUMBER
1
U1
1
ISL8105BIBZ
2
Q1
1
PART TYPE
IC, Linear
DESCRIPTION
PACKAGE
VENDOR
IC, Single PWM Controller
8 LD SOIC Intersil
BSC080N30LS G MOSFET
30V N-Channel MOSFET
TDSON-08 Infineon
BSC030N03LS G MOSFET
30V N-Channel MOSFET
TDSON-08 Infineon
SMD
3
Q3
1
4
Q2, Q4, Q5, Q6
DNP
5
L1
1
HC9-1R0-R
Inductor
1.0µH, high current inductor
6
SW1
1
EVQ-PAD04M
Push Switch
SWITCH-PUSH, TH, 6mm,
1P, PUSHB MOM-SPST
7
C1
1
Capacitor, Ceramic, 10nF, 50V, 10%, ROHS
X7R
SM_0603
TDK/Generic
8
C2
1
Capacitor, Ceramic, 390pF, 50V, 10%, ROHS
X7R
SM_0603
TDK/Generic
9
C3
1
Capacitor, Ceramic, 3.3nF, 50V, 10%, ROHS
X7R
SM_0603
TDK/Generic
10
C4, C9, C10
3
Capacitor, Ceramic, 1µF, 25V, 10%, X7R, ROHS
X7R
SM_0805
TDK/Generic
11
C5, C27, C28
3
Capacitor, Ceramic, 0.1µF, 16V, 10%, ROHS
X7R
SM_0603
TDK/Generic
12
C8
1
Capacitor, Ceramic, 680pF, 50V, 10%, ROHS
X7R
SM_0603
TDK/Generic
13
C11, C12, C13
3
35ME330AX
Aluminum Capacitor 330µF, 35V
RAD 10x20 Sanyo
14
C18, C19, C20, C21
4
2R5TPF470ML
Organic Alumium
Capacitor
470µF, 2.5V, 20%, ROHS
Case D3L
Sanyo
MOSFET
Cooper Bussmann
PANASONIC
CAPACITORS
15 C6, C7, C14, C15, C16, C17, DNP
C22, C23, C24, C25, C26
RESISTORS
16
R1
1
Resistor, Film
11.8kΩ, 1%, 1/16W
SM_0603
Panasonic/Generic
17
R2
1
Resistor, Film
12kΩ, 1%, 1/16W
SM_0603
Panasonic/Generic
18
R3
1
Resistor, Film
301Ω, 1%, 1/16W
SM_0603
Panasonic/Generic
19
R4
1
Resistor, Film
5.9kΩ, 1%, 1/16W
SM_0603
Panasonic/Generic
20
R5
1
Resistor, Film
1.74kΩ, 1%, 1/16W
SM_0603
Panasonic/Generic
21
R6
1
Resistor, Film
4.7Ω, 1%, 1/16W
SM_0603
Panasonic/Generic
22
R7, R8
DNP
23
TPVO1
DNP
24
J1, J4
2
25
J3, J5
26
SM_0603
OTHERS
Terminal, Scope
Probe
CONN-PIN RECEPTACLE,
0.086 DIA, 0.200 L, ROHS
MILL-MAX
111-0702-001
Blinding Post
CONN-GEN, BIND. POST,
RED, THMBNUT-GND
JOHNSON
COMPONENTS
2
111-0703-001
Blinding Post
CONN-GEN, BIND. POST,
BLACK, THMBNUT-GND
JOHNSON
COMPONENTS
J2, J6
2
1514-2
Turrett Post
CONN-TURRET, TERMINAL
POST, TH, ROHS
Keystone
27
J7
1
68000-236-1X3
3-pin Jumper
Berg/FCI
28
TP3, TP6, TP9, TP10
4
5002
Test Point
CONN-MINI TEST POINT,
VERTICAL, WHITE, ROHS
Keystone
29
TP2, TP4, TP7, TP8
DNP 5002
Test Point
CONN-MINI TEST POINT,
VERTICAL, WHITE, ROHS
Keystone
7
AN1288.1
October 30, 2008
Application Note 1288
ISL8105BEVAL1Z Printed Circuit Board Layers
FIGURE 12. ISL8105BEVAL1Z - TOP LAYER (SILKSCREEN)
FIGURE 14. ISL8105BEVAL1Z - LAYER 2
FIGURE 16. ISL8105BEVAL1Z - BOTTOM LAYER
8
FIGURE 13. ISL8105BEVAL1Z - TOP LAYER
(COMPONENT SIDE)
FIGURE 15. ISL8105BEVAL1Z - LAYER 3
FIGURE 17. ISL8105BEVAL1Z - BOTTOM LAYER
(SOLDER SIDE)
AN1288.1
October 30, 2008
ISL8105BEVAL2Z Schematic
TP9
J1
VIN
C13
+
C11
+
330uF
C10
1uF
C9
1uF
330uF
1
+
J2
C12
+
330uF
2
TP2
C18
470uF
+
C4
1.0uF
C5
C19
470uF
+
3
J7
+
C21
470uF
C20
470uF
C23
DNP
C22
DNP
C25
DNP
C24
DNP
0.1uF
VBIAS
TP7
VBIAS 6
VBIAS
BOOT
1
BOOT
TGATE
2
TGATE
5
9
VIN
Q4
TP8
SW1
FB
4
GND
10
ISL8105B DFN LX
LX
2
Q2
5 BGATE
BGATE/BSOC
DNP
NC2
3
R5
1.74k
4
R6
4.7
Q5
DNP
4
1
2
3
11
NC1
Q6
DNP
1
2
3
7
J3
J4
VOUT
1
VOUT
Q3
3
EP
TP10GND
J6
2
8
5
FB
4
L1
1uH
1
2
3
U1
1
TP6
Q1
5
COMP/EN
4
Application Note 1288
DNP
COMP/EN 9
R7
DNP
+
C6
C15
+
DNP
DNP
+
C8
680pF
C14
C17
C28
0.1uF
DNP
+
DNP
C16
C27
0.1uF
DNP
J5
GND
TP4
R1
11.8k
C3
3.3nF
R2
12k
R4
5.9k
R3
301
Probe Socket 2
TPVO1
4
C26
DNP
3
C1
10nF
GND
TP3
C7
DNP
1
C2
390pF
R8
DNP
Intersil Corporation
1001 Murphy Ranch Rd.
Milpitas, CA, 95035
Size
Title
Rev
A
ISL8105BEVAL2Z
AN1288.1
October 30, 2008
Date:
Friday, July 11, 2008
Sheet
1
of
1
Application Note 1288
ISL8105BEVAL2Z Bill of Materials
ID
REFERENCE
QTY
PART NUMBER
1
U1
1
ISL8105BIRZ
2
Q1
1
PART TYPE
IC, Linear
DESCRIPTION
PACKAGE
VENDOR
IC, Single PWM Controller
10 LD DFN Intersil
BSC080N30LS G MOSFET
30V N-Channel MOSFET
TDSON-08 Infineon
BSC030N03LS G MOSFET
30V N-Channel MOSFET
TDSON-08 Infineon
SMD
3
Q3
1
4
Q2, Q4, Q5, Q6
DNP
5
L1
1
HC9-1R0-R
Inductor
1.0µH, high current inductor
6
SW1
1
EVQ-PAD04M
Push Switch
SWITCH-PUSH, TH, 6mm,
1P, PUSHB MOM-SPST
7
C1
1
Capacitor, Ceramic, 10nF, 50V, 10%, ROHS
X7R
SM_0603
TDK/Generic
8
C2
1
Capacitor, Ceramic, 390pF, 50V, 10%, ROHS
X7R
SM_0603
TDK/Generic
9
C3
1
Capacitor, Ceramic, 3.3nF, 50V, 10%, ROHS
X7R
SM_0603
TDK/Generic
10
C4, C9, C10
3
Capacitor, Ceramic, 1µF, 25V, 10%, X7R, ROHS
X7R
SM_0805
TDK/Generic
11
C5, C27, C28
3
Capacitor, Ceramic, 0.1µF, 16V, 10%, ROHS
X7R
SM_0603
TDK/Generic
12
C8
1
Capacitor, Ceramic, 680pF, 50V, 10%, ROHS
X7R
SM_0603
TDK/Generic
13
C11, C12, C13
3
35ME330AX
Aluminum Capacitor 330µF, 35V
RAD 10x20 Sanyo
14
C18, C19, C20, C21
4
2R5TPF470ML
Organic Alumium
Capacitor
470µF, 2.5V, 20%, ROHS
Case D3L
Sanyo
MOSFET
Cooper Bussmann
PANASONIC
CAPACITORS
15 C6, C7, C14, C15, C16, C17, DNP
C22, C23, C24, C25, C26
RESISTORS
16
R1
1
Resistor, Film
11.8kΩ, 1%, 1/16W
SM_0603
Panasonic/Generic
17
R2
1
Resistor, Film
12kΩ, 1%, 1/16W
SM_0603
Panasonic/Generic
18
R3
1
Resistor, Film
301Ω, 1%, 1/16W
SM_0603
Panasonic/Generic
19
R4
1
Resistor, Film
5.9kΩ, 1%, 1/16W
SM_0603
Panasonic/Generic
20
R5
1
Resistor, Film
1.74kΩ, 1%, 1/16W
SM_0603
Panasonic/Generic
21
R6
1
Resistor, Film
4.7Ω, 1%, 1/16W
SM_0603
Panasonic/Generic
22
R7, R8
DNP
23
TPVO1
DNP
24
J1, J4
2
25
J3, J5
26
SM_0603
OTHERS
Terminal, Scope
Probe
CONN-PIN RECEPTACLE,
0.086 DIA, 0.200 L, ROHS
MILL-MAX
111-0702-001
Blinding Post
CONN-GEN, BIND. POST,
RED, THMBNUT-GND
JOHNSON
COMPONENTS
2
111-0703-001
Blinding Post
CONN-GEN, BIND. POST,
BLACK, THMBNUT-GND
JOHNSON
COMPONENTS
J2, J6
2
1514-2
Turrett Post
CONN-TURRET, TERMINAL
POST, TH, ROHS
Keystone
27
J7
1
68000-236-1X3
3-pin Jumper
Berg/FCI
28
TP3, TP6, TP9, TP10
4
5002
Test Point
CONN-MINI TEST POINT,
VERTICAL, WHITE, ROHS
Keystone
29
TP2, TP4, TP7, TP8
DNP 5002
Test Point
CONN-MINI TEST POINT,
VERTICAL, WHITE, ROHS
Keystone
10
AN1288.1
October 30, 2008
Application Note 1288
ISL8105BEVAL2Z Printed Circuit Board Layers
FIGURE 18. ISL8105BEVAL2Z - TOP LAYER (SILKSCREEN)
FIGURE 20. ISL8105BEVAL2Z - LAYER 2
FIGURE 22. ISL8105BEVAL2Z - BOTTOM LAYER
FIGURE 19. ISL8105BEVAL2Z - TOP LAYER
(COMPONENT SIDE)
FIGURE 21. ISL8105BEVAL2Z - LAYER 3
FIGURE 23. ISL8105BEVAL2Z - BOTTOM LAYER
(SOLDER SIDE)
Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to
verify that the Application Note or Technical Brief is current before proceeding.
For information regarding Intersil Corporation and its products, see www.intersil.com
11
AN1288.1
October 30, 2008
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