IRF9Z30, SiHF9Z30 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • - 50 RDS(on) () VGS = - 10 V 0.14 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 15 Configuration Single S Note * Lead (Pb)-containing terminations are not RoHS-compliant. Exemptions may apply. TO-220AB DESCRIPTION G G D P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The p-channel power MOSFET’s are designed for application which require the convenience of reverse polarity operation. They retain all of the features of the more common n-channel Power MOSFET’s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. P-channel power MOSFETs are intended for use in power stages where complementary symmetry with n-channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. S D P-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF9Z30PbF SiHF9Z30-E3 IRF9Z30 SiHF9Z30 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 50 Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID IDM Linear Derating Factor Inductive Current, Clamped Unclamped Inductive Current (Avalanche Current) Maximum Power Dissipation TC = 25 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s V - 18 - 11 A - 60 0.59 L = 100 μH UNIT W/°C ILM - 60 A IL - 3.1 A PD 74 W TJ, Tstg - 55 to + 150 300c °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. VDD = - 25 V, starting TJ = 25 °C, L =100 μH, Rg = 25 c. 0.063" (1.6 mm) from case. S12-3048-Rev. A, 24-Dec-12 Document Number: 91459 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z30, SiHF9Z30 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 80 Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = - 250 μA - 50 - - V VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V nA Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance VGS = ± 20 V - - ± 500 VDS = max. rating, VGS = 0 V - - - 250 VDS = max. rating x 0.8, VGS = 0 V, TJ =125 °C - - - 1000 - 0.093 0.14 3.1 4.7 - S - 900 - - 570 - - 140 - - 26 39 - 6.9 10 - 9.7 15 IGSS IDSS RDS(on) gfs VGS = - 10 V ID = - 9.3 Ab VDS = 2 x VGS, IDS = - 9 Ab μA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time tr td(off) tf VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 9 VGS = - 10 V ID = - 18 A, VDS = - 0.8 max. rating. see fig. 17 VDD = - 25 V, ID = - 18 A, Rg = 13 , RD = 1.3, see fig. 16 (MOSFET switching times are essentially independent of operating temperature) pF nC - 12 18 - 110 170 - 21 32 - 64 96 - - - 18 - - - 60 - - - 6.3 V 54 120 250 ns 0.20 0.47 1.1 μC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = - 18 A, VGS = 0 Vb TJ = 25 °C, IF = - 18 A, dI/dt = 100 A/μsb Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. Pulse width 300 μs; duty cycle 2 %. S12-3048-Rev. A, 24-Dec-12 Document Number: 91459 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z30, SiHF9Z30 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 25 25 - 10 V -8V 15 -7V 10 VGS = - 5 V - ID, Drain Current (A) 20 - ID, Drain Current (A) 80 μs Pulse Test 80 μs Pulse Test 20 - 10 V 15 -8V 10 -7V VGS = - 5 V 5 5 -5V -4V 0 0 5 10 15 20 -5V -4V 0 25 0 - VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 102 - ID, Drain Current (A) - ID, Drain Current (A) Operation in this Area Limited by RDS(on) 5 10 5 2 1 5 TJ = 150 °C TJ = 25 °C 2 102 SiHF9Z30 5 SiHF9Z32 SiHF9Z32 10 4 6 8 - VGS, Gate-to-Source Voltage (V) Fig. 2 - Typical Transfer Characteristics S12-3048-Rev. A, 24-Dec-12 10 1 μs 5 10 μs TC = 25 °C TJ = 150 °C Single Pulse 1 2 10 μs 100 μs SiHF9Z30 2 2 0.1 0 5 103 2 2 4 Fig. 3 - Typical Saturation Characteristics 80 µs Pulse Test VDS = 2 x VGS 5 3 2 1 - VDS, Drain-to-Source Voltage (V) 1 2 DC 5 10 2 5 102 - VDS, Drain-to-Source Voltage (V) Fig. 4 - Maximum Safe Operating Area Document Number: 91459 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z30, SiHF9Z30 www.vishay.com 10 Vishay Siliconix 1.25 VDS, Drain-to-Source Breakdown Voltage (Normalized) 80 μs Pulse Test VDS = 2 x VGS gfs, Transconductance (S) 8 6 TJ = 25 ° C 4 TJ = 150 °C 2 4 12 8 20 15 1.15 1.05 0.95 0.85 0.75 - 60 - 40 - 20 0 0 0 - ISD, Reverse Drain Current (A) 102 5 2 TJ = 150 °C 5 2 1 TJ = 25 °C 2 0.1 0 2 4 6 8 10 - VSD, Source-to-Drain Voltage (V) Fig. 6 - Typical Source-Drain Diode Forward Voltage S12-3048-Rev. A, 24-Dec-12 Fig. 7 - Breakdown Voltage vs. Temperature RDS(on), Drain-to-Source On Resistance (Normalized) Fig. 5 - Typical Transconductance vs. Drain Current 5 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) - ID, Drain Current (A) 10 ID = 1 mA 3.0 ID = - 18 A VGS = - 10 V 2.4 1.8 1.2 0.6 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 8 - Normalized On-Resistance vs. Temperature Document Number: 91459 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z30, SiHF9Z30 www.vishay.com Vishay Siliconix VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 1600 Capacitance (pF) RDS(on), Drain to Source on Resistance 2000 1200 Ciss Coss 800 400 Crss 0 2.0 80 μs Pulse Test 1.6 1.2 VGS = - 10 V 0.8 0.4 VGS = - 20 V 0.0 1 2 10 5 5 2 102 0 12 36 48 60 - ID, Drain Current (A) - VDS, Drain-to-Source Voltage (V) Fig. 11 - Typical On-Resistance vs. Drain Current Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage 20 20 ID = - 18 A - ID, Drain Current (A) - VGS, Gate-to-Source Voltage (V) 24 16 VDS = - 40 V 12 8 4 16 SiHF9Z30 12 SiHF9Z32 8 4 For test circuit see figure 17 0 25 0 0 10 20 30 40 50 50 75 100 125 150 TC, Case Temperature (°C) Qg, Total Gate Charge (nC) Fig. 12 - Maximum Drain Current vs. Case Temperature Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage S12-3048-Rev. A, 24-Dec-12 Document Number: 91459 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9Z30, SiHF9Z30 www.vishay.com Vary tp to obtain required peak IL Vishay Siliconix L VDSS DUT tp VGS = - 10 V VDD VDD IL + EC 0.05 Ω IL VDD = 0 5 8 VDS tp VDS EC = 0 75 BVDS Fig. 13b - Unclamped Inductive Load Test Waveforms Fig. 13a - Unclamped Inductive Test Circuit Thermal Response (ZthJC) 10 1 0 = 0.5 0.2 PDM 0.1 0.05 0.02 0.1 t1 Single Pulse (Thermal Response) t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 0.01 10-2 10-5 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration - VDS (Isolated supply) Current regulator RD 12 V battery Same type as D.U.T 50 kΩ 0.2 μF 0.3 μF Vary IP to obtain required peak IL VGS = - 10 V D.U.T RG + D PS G D.U.T - 1.5 mA S tp + VDS IG Current sampling resistor Fig. 15 - Switching Time Test Circuit ID Current sampling resistor Fig. 16 - Gate Charge Test Circuit Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91459. S12-3048-Rev. A, 24-Dec-12 Document Number: 91459 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000