V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V to 200 V TrenchFET® Gen IV Higher Efficiency and Power Density with a Combination of Low RDS(on) and Excellent Dynamic Characteristics KEY BENEFITS • New next generation technology provides very low on-resistance and ultra-low figure of merit (FOM) • Qgd / Qgs ratio < 1 improves immunity to C*dV/dt gate coupling • Very low Qgd “miller” charge reduces power loss from charging through plateau voltage –– Reduce switching related power loss and “miller” time • Selective products have logic level and standard gate drive capabilities –– Can lower losses by enabling lower gate drive –– Allows use of lower-voltage, lower cost 5 V PWM ICs –– Low FOM helps reduce switching losses • Wide package variety including TO packages and thermally advanced, space saving PowerPAK® • Devices in TO packages have maximum junction temperature rated up to 175 °C APPLICATIONS • Motor control / 3-phase H-bridge AC inverter • Synchronous rectification for: –– Solar micro inverters –– AC-DC power supplies –– Battery charging station for e-vehicles »» Computing, consumer, server, telecom equipment –– OR-ing function –– LLC topology »» Redundant power architecture »» ATX server, LED TV power • Boost converters –– Telecom bricks and POLs APPLICATION NOTES AND RESOURCES • Datasheets: see table on back page • How2 Turn On a MOSFET: www.vishay.com/doc?49940 • Other application notes: www.vishay.com/moreinfo/MOSTECHPAPERS/ • For technical questions contact: [email protected] • More featured products: www.vishay.com/ref/featuredmosfets PRODUCT SHEET 1/2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 A WORLD OF SOLUTIONS VMN-PT0337-1605 www.vishay.com VDS ( 80 V I S H AY I N T E R T E C H N O L O G Y, I N C . 60 40 0 5 10 POWER MOSFETs 15 20 25 30 R Typical (m ® ) 40 V to 200 V TrenchFET Gen IV DS(ON) NEW Products Previous Generation NEW PLATFORMS REDUCED RDS(ON) AND Qg ACROSS 40 V TO 200 V Qg Improvement over prior generation 200 200 150 150 100 100 VDS (V) VDS (V) RDS(ON) Improvement over prior generation 80 80 60 60 40 40 0 5 10 15 20 25 0 30 50 100 150 RDS(ON) Typical (m ) NEW Products Previous Generation NEW Products APPLICATION EXAMPLES Qg Improvement over prior generation SYNCHRONOUS RECTIFICATION AND OR-ING 200 Primary Side VDS (V) OR’ing Primary Side Np Ns Previous Generation POL Secondary Side OR’ing VRM DDR/Memory MOTOR CONTROL MOSFET VRM MOSFET MOSFET MOSFET MOSFET TO-220 DDR/Memory 100 80 DC Motor 60 MOSFET MOSFET MOSFET MOSFET 40 PACKAGING 250 POL Secondary Side Np 150 Ns 200 Qg Typical (nC) 0 DC 50 Motor 100 150 200 250 Qg Typical (nC) Package NEW MOSFET Products Previous Generation PowerPAK PowerPAK PowerPAK PowerPAK PowerPAK MOSFET MOSFET SC-75 SC-70 1212-8 SO-8 SO-8L SO-8 DPAK D2PAK 31 70 165 TL TO-220FP Approx. footrprint (mm²) 2.5 Voltage (V) Lowest RDS(on) 4 11 30 30 40 14 (dev) 2.65 0.88 1.8 (dev) 60 32 8.5 2.7 8 19.5 5.5 6.2 83 21 6.6 9.1 177 58 18 20.5 (dev) 110 30 (dev) 80 100 150 200 185 4.2 (dev) 8.8 8.9 1.4 1.6 2.1 2.3 3.2 3.4 3.8 4 9 9.4 17 17 5.9 Datasheet: www.vishay.com/mosfets/medium-voltage/ PRODUCT SHEET 2/2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VMN-PT0337-1605 www.vishay.com