Cypress Roadmap: Automotive Flash Memory Q2 2016 002-11251 Rev. *A Owner: XIUG BUM: RHOE Automotive Flash Memory Roadmap CYPRESS CONFIDENTIAL 1 NOR Flash Memory Family Decoder S 29 G L 128 S 002-11251 Rev. *A Owner: XIUG BUM: RHOE Technology: J = 110 nm, Floating Gate K = 90 nm, Floating Gate L = 65 nm, Floating Gate N = 110 nm, MirrorBit P = 90 nm, MirrorBit S = 65 nm, MirrorBit T = 45 nm, MirrorBit Density: 001 = 1Mb 002 = 2Mb 004 = 4Mb 008 = 8Mb 016 = 16Mb 032 = 32Mb 064 = 64Mb 128 = 128Mb 256 = 256Mb 512 = 512Mb 01G = 1Gb 02G = 2Gb Voltage: D = 2.5 V L = 3.0 V S = 1.8 V Family: A = Standard ADP (Address-Data Parallel) C = Burst Mode ADP (Address-Data Parallel) F = Quad SPI G = Page Mode J = Simultaneous Read/Write ADP (Address-Data Parallel) K = HyperBus P = Page Mode Simultaneous Read/Write ADP (Address-Data Parallel) Series: 25 = SPI 29 = NOR Prefix: S 26 = HyperFlash 70 = Stacked Die Automotive Flash Memory Roadmap CYPRESS CONFIDENTIAL 1 = 63 nm, DRAM 04G = 4Gb 08G = 8Gb 0AG = 16Gb 0BG = 32Gb 0CG = 64Gb 27 = HyperRAM 79 = Dual Quad SPI 2 Automotive Portfolio: Parallel NOR S29GL-S2 65 nm, 3.0 V S29GL-T2 45 nm, 3.0 V Density Initial / Page Access Temp Range 2Gb5 110 ns / 20 ns Grades: A3 and B6 2Gb5 110 ns / 20 ns Contact Sales All parts supported by Longevity Program unless noted 1Gb 100 ns / 15 ns Grades: A3 and B6 1Gb 100 ns / 15 ns Grades: A3 , B6 and M4 512Mb 100 ns / 15 ns Grades: A3 and B6 512Mb 100 ns / 15 ns Grades: A3 , B6 and M4 ≥256Mb S29AS-J 110 nm, 1.8 V S29AL-J 110 nm, 3.0 V S29JL-J1 110 nm, 3.0 V S29PL-J1,2 110 nm, 3.0 V S29GL-N2 110 nm, 3.0 V 256Mb 90 ns / 15 ns Grades: A3 and B6 ≤32Mb 64-128Mb 128Mb 60 ns / 20 ns Grade: A3 16Mb 70 ns / -Grade: A3 16Mb 55 ns / -Grades: A3 and M4 8Mb 70 ns / -Grade: A3 8Mb 55 ns / -Grades: A3 and M4 128Mb 90 ns / 15 ns Grades: A3 and B6 64Mb 55 ns / -Grade: A3 64Mb 55 ns / 20 ns Grade: A3 64Mb 90 ns / 25 ns Grade: A3 32Mb 60 ns / -Grade: A3 32Mb 55 ns / 20 ns Grade: A3 32Mb 90 ns / 25 ns Grade: A3 Concept Development 1 Supports simultaneous read/write operation Supports Page mode 3 AEC-Q100: -40ºC to +85ºC 4 AEC-Q100: -40ºC to +125ºC 5 S70 series (stacked die) 6 AEC-Q100: -40ºC to +105ºC 2 002-11251 Rev. *A Owner: XIUG BUM: RHOE 64Mb 70 ns / 15 ns Grades: A3 and B6 Industrial Automotive Availability EOL(Last-Time-Ship) Automotive Flash Memory Roadmap CYPRESS CONFIDENTIAL Sampling Production QQYY QQYY QQYY 3 64-128Mb ≥256Mb Automotive Portfolio: HyperFlash, HyperRAM, & Burst Parallel NOR HyperFlash S26KS-S1 65 nm 1.8 V HyperFlash S26KL-S1 65 nm 3.0 V HyperRAM S27KS-12 63 nm 1.8 V HyperRAM S27KL-12 63 nm 3.0 V Density Initial / Page Access Temp Range All parts supported by Longevity Program unless noted 1Gb3 96 ns / 166 MHz Contact Sales 1Gb3 96 ns / 100 MHz Contact Sales 512Mb 96 ns / 166 MHz Grades: A5, B6 and M7 512Mb 96 ns / 100 MHz Grades: A5, B6 and M7 256Mb 96 ns / 166 MHz Grades: A5, B6 and M7 256Mb 96 ns / 100 MHz Grades: A5, B6 and M7 256Mb3 36 ns / 166 MHz Contact Sales 256Mb3 36 ns / 100 MHz Contact Sales 128Mb 96 ns / 166 MHz Grades: A5, B6 and M7 128Mb 96 ns / 100 MHz Grades: A5, B6 and M7 128Mb3 36 ns / 166 MHz Contact Sales 128Mb3 36 ns / 100 MHz Contact Sales Q416 64Mb 36 ns / 100 MHz Grades A5 and B6 ≤32Mb 64Mb 36 ns / 166 MHz Grades A5 and B6 S29CD-J3 110 nm, 2.5 V S29CL-J3 110 nm, 3.0 V 32Mb 54 ns / 75 MHz Grades: A5, M7 and T8 32Mb 54 ns / 75 MHz Grades: A5, M7 and T8 16Mb 54 ns / 66 MHz Grades: A5, M7 and T8 16Mb 54 ns / 66 MHz Grades: A5, M7 and T8 Q416 Concept Development 1 S26 = HyperFlash 2 S27 = HyperRAM 3 ADP (Address Data Parallel) Burst 4 S70 series (stacked die) 002-11251 Rev. *A Owner: XIUG BUM: RHOE 5 AEC-Q100: -40ºC to +85ºC 6 AEC-Q100: -40ºC to +105ºC 7 AEC-Q100: -40ºC to +125ºC 8 AEC-Q100: -40ºC to +145ºC Industrial Automotive Availability Sampling Production QQYY QQYY QQYY Automotive Flash Memory Roadmap CYPRESS CONFIDENTIAL 4 Automotive Portfolio: SPI NOR Roadmap S25FL1-K 90 nm, 3.0V 4KB1 S25FL-L 65 nm, 3.0 V 4KB1 S25FL-P 90 nm, 3.0 V >4KB1 S25FL-S 65 nm, 3.0 V >4KB1 Density (Name) SDR / DDR Clock Temp Range ≥256Mb All parts supported by Longevity Program unless noted 64-128Mb Q316 256Mb 133 MHz / 66 MHz Grades: A4, B5 and M6 64Mb 108 MHz / -Grades: A4 and B5 ≤32Mb S25FS-S 65 nm, 1.8 V >4KB1 1Gb3 133 MHz / 80 MHz Grades: A4 and B5 Q216 1Gb 133 MHz / 80 MHz Grades: A4 and B5 Q316 1Gb3 133 MHz / 80 MHz Grades: A4, B5 and M6 512Mb 133 MHz / 80 MHz Grades: A4 , B5 and M6 Q216 512Mb 133 MHz / 80 MHz Grades: A4 and B5 Q216 512Mb 133 MHz / 80 MHz Grades: A4, B5 and M6 256Mb 133 MHz / 80 MHz Grades: A4 , B5 and M6 Q216 256Mb 133 MHz / 80 MHz Grades: A4 and B5 128Mb7 104 MHz / -Grades: A4 and B5 128Mb8 133 MHz / 80 MHz Grades: A4, B5 and M6 128Mb 133 MHz / 66 MHz Grades: A4, B5 and M6 128Mb9 104 MHz / -Grades: A4 and B5 128Mb10 108 MHz Grades: A4 and B5 64Mb 108 MHz / -Grades: A4, B5 and M6 64Mb 104 MHz / -Grades: A4 and B5 32Mb 108 MHz / -Grades: A4 and B5 S79FL-S2 65 nm, 3.0 V >4KB1 256Mb 133 MHz / 80 MHz Grades: A4 and B5 128Mb 133 MHz / 80 MHz Grades: A4 and B5 Q316 64Mb 133 MHz / 100 MHz Grades: A4, B5 and M6 32Mb 104 MHz / -Grades: A4 and B5 16Mb 108 MHz / -Grades: A4 and B5 1 Logical sector size S79 series, Dual Quad SPI (stacked die) 3 S70 series (stacked die) 4 AEC-Q100: -40ºC to +85ºC 5 AEC-Q100: -40ºC to +105ºC 6 AEC-Q100: -40ºC to +125ºC 2 002-11251 Rev. *A Owner: XIUG BUM: RHOE 7 S25FL129P S25FL128S 9 S25FL128P 10 S25FL127S 8 Quad SPI 133-MHz SDR / 80-MHz DDR Dual SPI 108-MHz SDR Concept Development Industrial Automotive Availability EOL(Last-Time-Ship) Automotive Flash Memory Roadmap CYPRESS CONFIDENTIAL Sampling Production QQYY QQYY QQYY 5 NAND and e.MMC Family Decoders NAND S 34 M L 08G 2 Technology: 1 = 4x nm 2 = 32 nm Density: 01G = 1Gb 02G = 2Gb 04G = 4Gb 08G = 8Gb Voltage: L = 3.0 V S = 1.8 V Family: M = NAND (Address-Data Multiplexed) Series: 34 = NAND Prefix: S Controller: B1 = e.MMC 4.51 B2 = e.MMC 5.1 Revision: 1 = NAND MLC1 1x nm 2 = NAND MLC1 1y nm Density: 004 = 4GB 008 = 8GB 064 = 064GB 128 = 128GB 0AG = 16Gb 0BG = 32Gb e.MMC S 40 41 016 1 B1 Controller Architecture: 1 Multi-level 002-11251 Rev. *A 016 = 16GB 032 = 32GB 41 = e.MMC Series: 40 = Managed Memory Prefix: S cell Owner: XIUG BUM: RHOE Automotive Flash Memory Roadmap CYPRESS CONFIDENTIAL 6 Automotive Portfolio: SLC NAND & e.MMC S34ML-11 4x nm, 3.0 V SLC, ONFI 1.04 S34MS-11 4x nm, 1.8 V SLC, ONFI 1.04 S34ML-22 32 nm, 3.0 V SLC, ONFI 1.04 S34MS-22 32 nm, 1.8 V SLC, ONFI 1.04 S4041-1B1 1x nm, 3.0 V MLC, e.MMC 4.515 S34SL-22, 3 32 nm, 3.0 V SLC, ONFI 1.04 S4041-2B2 1y nm, 3.0 V MLC, e.MMC 5.15 16Gb; x8 40 MBps 8Gb; x8 Q417 40 MBps Grades: A6 and B7 1G-4Gb 32GB-64GB All parts supported by Longevity Program unless noted 4Gb; x8/16 Q4’17 40 MBps Grades: A6 and B7 4Gb; x8 40 MBps Grade: B7 2Gb; x8/16 Q4’17 40 MBps Grades: A6 and B7 2Gb; x8 40 MBps Grade: B7 1Gb; x8 Q4’17 40 MBps Grades: A6 and B7 1Gb; x8 40 MBps Grade: B7 Q4’17 Q4’17 Q4’17 8Gb; x8 40 MBps Grades: A6 and B7 8Gb; x8 40 MBps 4Gb; x8 40 MBps Grades: A6 and B7 4Gb; x8/16 40 MBps 4Gb; x8 40 MBps 2Gb; x8/16 40 MBps Grades: A6 and B7 2Gb; x8/16 40 MBps 2Gb; x8 40 MBps 1Gb; x8/16 40 MBps Grades: A6 and B7 1Gb; x8/16 40 MBps Grade: A 1Gb; x8 40 MBps 64GB; x8 400 MBps Grade: A6 32GB; x8 400 MBps Grade: A6 Q216 Q117 16GB; x8 400 MBps Grade: A6 Q117 8GB; x8 400 MBps Grade: A6 16GB; x8 200 MBps Q216 Q216 8GB-16GB 8Gb-16Gb Density; Bus Width Interface Bandwidth 8GB; x8 200 MBps 1 1-bit ECC 4-bit ECC 3 Secure NAND 4 ONFI = Open NAND Flash Interface 5 e.MMC = Embedded Multi Media Card 6 AEC-Q100: -40ºC to +85ºC 7 AEC-Q100: -40ºC to +105ºC 2 002-11251 Rev. *A Owner: XIUG BUM: RHOE Concept Development Industrial Automotive Availability EOL(Last-Time-Ship) Automotive Flash Memory Roadmap CYPRESS CONFIDENTIAL Sampling Production QQYY QQYY QQYY 7 Parallel NOR Flash Memory Packages 48-ball FBGA 48-ball FBGA 56-ball BGA 64-ball BGA 64-ball Fortified BGA (0.8-mm pitch) (0.5-mm pitch) (0.8-mm pitch) (0.8-mm pitch) (1.0-mm pitch) 48-pin TSOP 56-pin TSOP Family Density Device AS-J 8Mb S29AS008J 16Mb S29AS016J 8Mb S29AL008J 16Mb S29AL016J 32Mb S29JL032J 64Mb S29JL064J 32Mb S29PL032J 64Mb S29PL064J 128Mb S29PL127J 32Mb S29GL032N 64Mb S29GL064N 64Mb S29GL064S 128Mb S29GL128S 256Mb S29GL256S 512Mb S29GL512S 1Gb S29GL01GS 2Gb S70GL02GS 512Mb S29GL512T 1Gb S29GL01GT 2Gb S70GL02GT AL-J JL-J PL-J GL-N GL-S GL-T 002-11251 Rev. *A Owner: XIUG BUM: RHOE Automotive Flash Memory Roadmap CYPRESS CONFIDENTIAL 8 HyperFlash, HyperRAM, & Burst Parallel NOR Packages BGA24 8 x 6 mm 5 x 5 ball 80-ball FBGA (1.0-mm pitch) 80-pin PQFP KGD Family Density Device KS-S 128Mb S26KS128S CF 256Mb S26KS256S CF 512Mb S26KS512S CF 1Gb S70KS01GS 128Mb S26KL128S CF 256Mb S26KL256S CF 512Mb S26KL512S CF 1Gb S70KL01GS 64Mb S26KS0641 CF 128Mb S26KS1281 CF 256Mb S70KS2561 64Mb S26KL0641 CF 128Mb S26KL1281 CF 256Mb S70KL2561 16Mb S29CD016J 32Mb S29CD032J 16Mb S29CL016J 32Mb S29CL032J KL-S KS-1 KL-1 CD-J CL-J CF = Contact Factory 002-11251 Rev. *A Owner: XIUG BUM: RHOE Automotive Flash Memory Roadmap CYPRESS CONFIDENTIAL 9 SPI NOR Flash Memory Packages SOIC-8 150 mil SOIC-8 208 mil SOIC-16 300 mil BGA24 8 x 6 mm 5 x 5 ball BGA24 8 x 6 mm 4 x 6 ball KGD UD UD UD UD USON 4 x 3 mm WSON 4 x 4 mm WSON 6 x 5 mm CF CF UD Family Density Device FL1-K 16Mb S25FL116K 32Mb S25FL132K 64Mb S25FL164K 64Mb S25FL064L UD UD UD 128Mb S25FL128L UD UD UD 256Mb S25FL256L FL-L FL-P FL-S FL-S Dual Quad FS-S WSON 8 x 6 mm UD 32Mb S25FL032P 64Mb S25FL064P 128Mb S25FL128P 128Mb S25FL129P 128Mb S25FL127S 128Mb S25FL128S 256Mb S25FL256S 512Mb S25FL512S 1Gb S70FL01GS 256Mb S79FL256S 512Mb S79FL512S 1Gb S79FL01GS 64Mb S25FS064S UD 128Mb S25FS128S 256Mb S25FS256S 512Mb S25FS512S 1Gb S70FS01GS LGA (UD) CF UD CF = Contact Factory UD = Under Development 002-11251 Rev. *A Owner: XIUG BUM: RHOE Automotive Flash Memory Roadmap CYPRESS CONFIDENTIAL 10 SLC NAND and e.MMC Packages 63-ball BGA (0.8-mm pitch) 153-ball FBGA (0.5-mm pitch) 100-ball LBGA (1.0-mm pitch) 48-pin TSOP Family Density Device ML-1 1Gb S34ML01G1 2Gb S34ML02G1 4Gb S34ML04G1 8Gb S34ML08G1 1Gb S34ML01G2 2Gb S34ML02G2 4Gb S34ML04G2 8Gb S34ML08G2 16Gb S34ML16G2 1Gb S34MS01G1 2Gb S34MS02G1 4Gb S34MS04G1 1Gb S34MS01G2 2Gb S34MS02G2 4Gb S34MS04G2 8Gb S34MS08G2 8GB S40410081B1 16GB S40410161B1 8GB S40410082B2 16GB S40410162B2 32GB S40410322B2 64GB S40410642B2 ML-2 MS-1 MS-2 41-1B1 41-2B2 002-11251 Rev. *A Owner: XIUG BUM: RHOE Automotive Flash Memory Roadmap CYPRESS CONFIDENTIAL 11 SLC NAND and e.MMC Packages 63-ball BGA (0.8-mm pitch) 153-ball FBGA (0.5-mm pitch) 100-ball LBGA (1.0-mm pitch) 48-pin TSOP Family Density Device ML-1 1Gb S34ML01G1 2Gb S34ML02G1 4Gb S34ML04G1 8Gb S34ML08G1 1Gb S34ML01G2 2Gb S34ML02G2 4Gb S34ML04G2 8Gb S34ML08G2 16Gb S34ML16G2 1Gb S34MS01G1 2Gb S34MS02G1 4Gb S34MS04G1 1Gb S34MS01G2 2Gb S34MS02G2 4Gb S34MS04G2 8Gb S34MS08G2 8GB S40410081B1 16GB S40410161B1 8GB S40410082B2 16GB S40410162B2 32GB S40410322B2 64GB S40410642B2 ML-2 MS-1 MS-2 41-1B1 41-2B2 002-11251 Rev. *A Owner: XIUG BUM: RHOE Automotive Flash Memory Roadmap CYPRESS CONFIDENTIAL 12