DATASHEET

HS-2700RH
Data Sheet
Low Power, High Performance Radiation
Hardened Operational Amplifier
HS-2700RH is radiation hardened internally compensated
operational amplifiers which employ dielectric isolation to
achieve excellent DC and dynamic performance with very
low quiescent power consumption.
DC performance of the amplifier input is characterized by
high CMRR (106dB), low offset voltage (0.5mV), along with
low bias and offset current (5.0nA and 2.5nA respectively).
These input specifications, in conjunction with offset null
capability and open-loop gain of 300,000V/V, enable
HS-2700RH to provide accurate, high-gain signal
amplification. Gain bandwidth 1MHz and slew rate of 20V/µs
allow for processing of fast, wideband signals. Input and
output signal amplitudes of at least ±11V can be
accommodated while providing output drive capability of
10mA. For maximum reliability, the output is protected in the
event of short circuits to ground.
The amplifier operates from a wide range of supplies (±5.5V
to ±20V) with a maximum quiescent supply drain of only
150µA. HS-2700RH is therefore, ideally suited to low-power
instrumentation and filtering applications that require fast,
accurate response over a wide range of signal frequency.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95670. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
August 1999
File Number
3624.2
Features
• Electrically Screened to SMD # 5962-95670
• QML Qualified per MIL-PRF-38535 Requirements
• Low Power Supply Current . . . . . . . . . . . . . . 150µA (Max)
90µA (Typ)
• High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . . . 86dB (Min)
106dB (Typ)
• Low Input Bias Current . . . . . . . . . . . . . . . . . . . 20nA (Min)
5nA (Typ)
• Low Offset Current . . . . . . . . . . . . . . . . . . . . . . 10nA (Min)
2.5nA (Typ)
• Total Dose . . . . . . . . . . . . . . . . . . . . . . . . 1 x 104 RAD(Si)
Applications
• High Gain Amplifier
• Instrumentation Amplifiers
• Active Filters
• Telemetry Systems
• Battery-Powered Equipment
Ordering Information
INTERNAL
MKT. NUMBER
ORDERING NUMBER
TEMP. RANGE
(oC)
5962D9567002VCA
HS1-2700RH-Q
-55 to 125
5962D9567002VCC
HS1B-2700RH-Q
-55 to 125
5962D9567002VGA
HS2-2700RH-Q
-55 to 125
Pinouts
HS1-2700RH (CERDIP) GDIP1-T14
OR
HS1B-2700RH (SBDIP) CDIP2-T14
TOP VIEW
NC 1
14 NC
BAL 2
13 NC
GUARD
3
BAL
8
BAL
1
7
V+
12 BAL
IN- 4
-
11 V+
IN+ 5
+
10 OUTPUT
6
9 NC
V- 7
8 NC
GUARD
HS2-2700RH (CAN) MACY1-X8
TOP VIEW
1
IN-
-
2
IN+
6
+
5
3
OUT
NC
4
V-
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
HS-2700RH
Test Circuit
ACOUT
1.6K
400
0.1
10K
-1/10
+VCC
1 OPEN
FOR LOOP STABILITY,
USE MIN VALUE CAPACITOR
TO PREVENT OSCILLATION
2 S3A
S1
2
1
1
OPEN 2
1
S2
100
2
50K
-
S5A
1 S6
2
DUT
1
OPEN
-
S8
2
S3B
500K
S5B 1
+
OPEN 2
10K
V1
75pF (NOTE)
1
1
BUFFER
V2
2K
0.1
1
-
+
2
2
OPEN 1
VAC
OPEN
-1
+
S9
x2
-VEE
100
EOUT
ALL RESISTORS = ±1% (Ω)
ALL CAPACITORS = ±10% (µF)
50K
NOTE: Includes stray capacitances.
Timing Waveforms
VIN
VOUT
+
-
1.6K
75pF
400
FIGURE 1. SIMPLIFIED TEST CIRCUIT
+1.0V
+40mV
INPUT
0V
INPUT
-40mV
0V
-1.0V
+4V
OVERSHOOT
+2.5V
∆V
OUTPUT
-2.5V
-4V
∆T
SLEW
RATE
= ∆V/∆T
FIGURE 2. SLEW RATE WAVEFORM
+160mV
90%
OUTPUT
10%
0V
RISE TIME
FIGURE 3. TRANSIENT RESPONSE WAVEFORM
NOTE: Measured on both positive and negative transitions. Capacitance at Compensation pin should be minimized.
2
HS-2700RH
Typical Performance Curves
TA = 25oC, VSUPPLY = ±15V, Unless Otherwise Specified
5
30
4
20
3
CURRENT (mA)
VOLTAGE (mV)
2
1
0
-1
-2
-3
BIAS CURRENT
10
0
OFFSET CURRENT
-10
-4
-5
-55
-25
0
25
50
75
100
-20
-55
125
-25
FIGURE 4. OFFSET VOLTAGE AS A FUNCTION OF
TEMPERATURE
50
75
100
125
10
400
VS = ±15.0V
9
VS = ±15.0V
300
TA = 25oC
8
TA = 25oC
BIAS CURRENT (µA)
BIAS CURRENT (nA)
25
FIGURE 5. INPUT BIAS CURRENT AND OFFSET CURRENT
AS A FUNCTION OF TEMPERATURE
500
200
100
0
-100
-200
7
6
5
4
3
-300
2
-400
1
-500
-20
0
-15
-10
-5
0
5
10
15
20
0
150
POWER SUPPLY CURRENT (µA)
TA = 25oC
800
700
600
500
400
300
200
100
0
0
100
200
300
400
500
DIFFERENTIAL INPUT VOLTAGE (mV)
FIGURE 8. POWER SUPPLY CURRENT AS A FUNCTION OF
DIFFERENTIAL INPUT VOLTAGE
3
25
FIGURE 7. BIAS CURRENT AS A FUNCTION OF
DIFFERENTIAL INPUT VOLTAGE
VS = ±15.0V
900
20
15
DIFFERENTIAL INPUT VOLTAGE (V)
FIGURE 6. BIAS CURRENT AS A FUNCTION OF COMMON
MODE VOLTAGE
1000
10
5
COMMON MODE VOLTAGE (V)
POWER SUPPLY CURRENT (µA)
0
TEMPERATURE (oC)
TEMPERATURE (oC)
VS = ±20.0V
VS = ±15.0V
120
VS = ±10.0V
VS = ±5.5V
90
60
30
0
-55
-25
0
25
50
75
100
125
TEMPERATURE (oC)
FIGURE 9. POWER SUPPLY CURRENT AS A FUNCTION OF
TEMPERATURE
HS-2700RH
Typical Performance Curves
TA = 25oC, VSUPPLY = ±15V, Unless Otherwise Specified (Continued)
130
GAIN (dB)
120
110
100
VS = ±20.0V
VS = ±15.0V
90
VS = ±10.0V
VS = ±5.5V
80
-55
-25
0
25
50
75
100
125
TEMPERATURE (oC)
FIGURE 10. VOLTAGE GAIN AS A FUNCTION OF TEMPERATURE
NOTE: Open loop (comparator) applications are not recommended, because of the above characteristic.
Burn-In Circuits
HS1-2700RH CERDIP
HS2-2700RH METAL CAN
V+
C2
NC
1
14
NC
NC
2
13
NC
NC
3
12
NC
4
11
5
10
NC
VC1
D1
V+
D2
6
9
NC
7
8
NC
2
-
C2
3
+
7
4
R1
6
8
D2
C1
D1
R1
C3
V-
NOTES:
NOTES:
1. R1 = 1MΩ, ±5%, 1/4W (Min)
5. R1 = 1MΩ, ±5%, 1/4W (Min)
2. C1 = C2 = 0.01µF/Socket (Min) or 0.1µF/Row (Min)
6. C1 = 0.01µF/Socket (Min)
3. D1 = D2 = 1N4002 or equivalent (per board)
7. C2 = C3 = 0.01µF/Socket (Min) or 0.1µF/Row (Min)
4. |(V+) - (V-)| = 31V ±1V
8. D1 = D2 = 1N4002 or equivalent (per board)
9. |(V+) - (V-)| = 31V ±1V
10. Insulated scope probe must be used during board check-out.
4
HS-2700RH
Irradiation Circuit
NOTES:
11. R = 1MΩ, ±5%, 1/4W
NC
1
14
NC
NC
2
13
NC
NC
3
12
NC
4
11
5
10
6
9
NC
7
8
NC
12. V1 = +15V + 1.0V
13. V2 = -15V + 1.0V
NC
V2
V1
R1
GND
Schematic Diagram
OS-
OS+
V1
15Ω
430K
Ω
V+
IN+
IN2
OUT
3
6
15Ω
V+
4
NOTE: Nominal currents shown in microamperes.
5
HS-2700RH
Die Characteristics
DIE DIMENSIONS:
ASSEMBLY RELATED INFORMATION:
70 mils x 60 mils x 20 mils
(1780µm x 1530µm x 1530µm)
Substrate Potential (Powered Up):
Unbiased
INTERFACE MATERIALS:
ADDITIONAL INFORMATION:
Glassivation:
Worst Case Current Density:
Type: Nitride
Thickness: 7kÅ ±0.7kÅ
< 2 x 105 A/cm2
Top Metallization:
Type: Aluminum
Thickness: 16kÅ ±2kÅ
Substrate:
Linear Bipolar, DI
Backside Finish:
Silicon
Metallization Mask Layout
HS-2700RH
+IN
-IN
V-
BAL
BAL
V+
OUTPUT
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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