DATASHEET

CD4020BMS, CD4024BMS,
CD4040BMS
CMOS Ripple-Carry Binary
Counter/Dividers
October 1996
Features
Pinouts
• High Voltage Types (20V Rating)
CD4020BMS
TOP VIEW
• Medium Speed Operation
• Fully Static Operation
• Buffered Inputs and Outputs
Q12 1
16 VDD
• 100% Tested for Quiescent Current at 20V
Q13 2
15 Q11
• Standardized Symmetrical Output Characteristics
Q14 3
14 Q10
• Common Reset
Q6 4
13 Q8
• 5V, 10V and 15V Parametric Ratings
Q5 5
12 Q9
• Maximum Input Current of 1µa at 18V Over Full Package-Temperature Range;
- 100nA at 18V and 25oC
Q7 6
11 RESET
Q4 7
10 θ
• Noise Margin (Over Full Package Temperature Range):
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications For Description Of
‘B’ Series CMOS Devices”
Applications
9 Q1
VSS 8
CD4024BMS
TOP VIEW
θ 1
14 VDD
RESET 2
13 NC
Q7 3
12 Q1
• Control Counters
• Timers
Q6 4
11 Q2
Q5 5
10 NC
Q4 6
9 Q3
VSS 7
8 NC
• Frequency Dividers
• Time-Delay Circuits
Description
NC = NO CONNECTION
CD4020BMS - 14 Stage
CD4024BMS - 7 Stage
CD4040BMS
TOP VIEW
CD4040BMS - 12 Stage
CD4020BMS, CD4024BMS, and CD4040BMS are ripplecarry binary counters. All counter stages are master-slave
flip-flops. The state of a counter advances one count on the
negative transition of each input pulse; a high level on the
RESET line resets the counter to its all zeros state. Schmitt
trigger action on the input-pulse line permits unlimited rise
and fall times. All inputs and outputs are buffered.
The CD4020BMS, CD4024BMS and the CD4040BMS is
supplied in these 14 lead outline packages:
CD4020B
CD4024B
CD4040B
Braze Seal DIP
H4W
H4Q
H4X
Frit Seal DIP
H1F
H1B
H1F
Ceramic Flatpack
H6W
H3W
H6W
Q12 1
16 VDD
Q6 2
15 Q11
Q5 3
14 Q10
Q7 4
13 Q8
Q4 5
12 Q9
Q3 6
11 R
Q2 7
10 θ
VSS 8
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-359
9 Q1
File Number
3300.1
Specifications CD4020BMS, CD4024BMS, CD4040BMS
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . .
θja
θjc
Ceramic DIP and FRIT Package . . . . . 80oC/W
20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W
20oC/W
o
Maximum Package Power Dissipation (PD) at +125 C
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K) . . . . . . Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS (NOTE 1)
VDD = 20V, VIN = VDD or GND
GROUP A
SUBGROUPS
LIMITS
TEMPERATURE
1
VDD = 18V, VIN = VDD or GND
Input Leakage Current
Input Leakage Current
IIL
IIH
VIN = VDD or GND
VIN = VDD or GND
Output Voltage
Output Current (Sink)
Output Current (Sink)
VOL15
VOH15
IOL5
IOL10
UNITS
10
µA
-
1000
µA
oC
-
10
µA
+125 C
3
-55
1
+25o
C
-100
-
nA
2
+125oC
-1000
-
nA
VDD = 18V
3
-55oC
-100
-
nA
VDD = 20
1
+25oC
-
100
nA
2
+125oC
-
1000
nA
3
-55oC
VDD = 20
VDD = 18V
Output Voltage
MAX
-
+25 C
2
MIN
o
o
VDD = 15V, No Load
VDD = 15V, No Load (Note 3)
VDD = 5V, VOUT = 0.4V
VDD = 10V, VOUT = 0.5V
-
100
nA
1, 2, 3
+25oC,
+125oC,
-55oC
-
50
mV
1, 2, 3
+25oC,
+125oC,
-55oC
14.95
-
V
1
+25oC
0.53
-
mA
1
+25oC
1.4
-
mA
Output Current (Sink)
IOL15
VDD = 15V, VOUT = 1.5V
1
+25oC
3.5
-
mA
Output Current (Source)
IOH5A
VDD = 5V, VOUT = 4.6V
1
+25oC
-
-0.53
mA
Output Current (Source)
IOH5B
VDD = 5V, VOUT = 2.5V
1
+25oC
-
-1.8
mA
1
+25oC
-
-1.4
mA
1
+25oC
-
-3.5
mA
1
+25oC
-2.8
-0.7
V
1
+25oC
0.7
2.8
V
7
+25oC
VDD = 20V, VIN = VDD or GND
7
+25oC
VDD = 18V, VIN = VDD or GND
8A
+125oC
VDD = 3V, VIN = VDD or GND
8B
Output Current (Source)
Output Current (Source)
N Threshold Voltage
P Threshold Voltage
Functional
IOH10
IOH15
VNTH
VPTH
F
VDD = 10V, VOUT = 9.5V
VDD = 15V, VOUT = 13.5V
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VDD = 2.8V, VIN = VDD or GND
Input Voltage Low
(Note 2)
VIL
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
Input Voltage High
(Note 2)
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
Input Voltage Low
(Note 2)
VIL
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
Input Voltage High
(Note 2)
VIH
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
7-360
V
-55oC
+25oC,
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs
VOH > VOL <
VDD/2 VDD/2
+125oC, -55oC
-
1.5
V
+25oC, +125oC, -55oC
3.5
-
V
1, 2, 3
+25oC, +125oC, -55oC
-
4
V
1, 2, 3
+25oC, +125oC, -55oC
11
-
V
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
Specifications CD4020BMS, CD4024BMS, CD4040BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Propagation Delay
0 To Q1
SYMBOL
TPHL1
TPLH1
CONDITIONS (NOTE 1, 2)
VDD = 5V, VIN = VDD or GND
TPHL2
TPLH2
VDD = 5V, VIN = VDD or GND
Propagation Delay
Reset To Q
TPLH3
TPHL3
VDD = 5V, VIN = VDD or GND
Maximum Clock Input
Frequency
9
10, 11
Propagation Delay
Qn To Qn + 1
Transition Time
Q1
GROUP A
SUBGROUPS TEMPERATURE
9
10, 11
9
10, 11
TTHL
TTLH
VDD = 5V, VIN = VDD or GND
FCL
VDD = 5V, VIN = VDD or GND
9
10, 11
+25oC
+125oC,
-55oC
+25oC
+125oC,
-55oC
+25oC
+125oC,
-55oC
+25oC
+125oC,
-55oC
LIMITS
MIN
MAX
UNITS
-
360
ns
-
486
ns
-
330
ns
-
446
ns
-
280
ns
-
378
ns
-
200
ns
-
270
ns
9
+25oC
3.5
-
MHz
10, 11
+125oC, -55oC
2.22
-
MHz
MIN
MAX
UNITS
µA
NOTES:
1. VDD = 5V, CL = 50pF, RL = 200K
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
NOTES
VDD = 5V, VIN = VDD or GND
VDD = 10V, VIN = VDD or GND
VDD = 15V, VIN = VDD or GND
Output Voltage
VOL
VDD = 5V, No Load
1, 2
1, 2
1, 2
1, 2
TEMPERATURE
-55oC,
+25oC
-
5
+125oC
-
150
µA
-55oC, +25oC
-
10
µA
+125oC
-
300
µA
-
10
µA
+125oC
-
600
µA
+25oC, +125oC,
-
50
mV
-55oC,
+25oC
-55oC
Output Voltage
VOL
VDD = 10V, No Load
1, 2
+25oC, +125oC,
-55oC
-
50
mV
Output Voltage
VOH
VDD = 5V, No Load
1, 2
+25oC, +125oC,
-55oC
4.95
-
V
Output Voltage
VOH
VDD = 10V, No Load
1, 2
+25oC, +125oC,
-55oC
9.95
-
V
Output Current (Sink)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125oC
0.36
-
mA
-55oC
0.64
-
mA
Output Current (Sink)
Output Current (Sink)
Output Current (Source)
Output Current (Source)
Output Current (Source)
Output Current (Source)
IOL10
IOL15
IOH5A
IOH5B
IOH10
IOH15
VDD = 10V, VOUT = 0.5V
1, 2
VDD = 15V, VOUT = 1.5V
1, 2
VDD = 5V, VOUT = 4.6V
1, 2
VDD = 5V, VOUT = 2.5V
1, 2
VDD = 10V, VOUT = 9.5V
1, 2
VDD =15V, VOUT = 13.5V
7-361
1, 2
+125oC
0.9
-
mA
-55oC
1.6
-
mA
+125oC
2.4
-
mA
-55oC
4.2
-
mA
+125oC
-
-0.36
mA
-55oC
-
-0.64
mA
+125oC
-
-1.15
mA
-55oC
-
-2.0
mA
+125oC
-
-0.9
mA
-55oC
-
-1.6
mA
+125oC
-
-2.4
mA
-55oC
-
-4.2
mA
Specifications CD4020BMS, CD4024BMS, CD4040BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
Input Voltage Low
SYMBOL
VIL
CONDITIONS
VDD = 10V, VOH > 9V, VOL < 1V
NOTES
TEMPERATURE
MIN
MAX
UNITS
1, 2
+25oC, +125oC,
-
3
V
-55oC
Input Voltage High
VIH
Propagation Delay
Input To Q1
TPHL1
TPLH1
Propagation Delay
QN To QN + 1
Propagation Delay
Reset To Q
Transition Time
Maximum Clock Input
Frequency
Minimum Reset Pulse
Width
TPHL2
TPLH2
TPHL3
VDD = 10V, VOH > 9V, VOL < 1V
VDD = 10V
-
V
1, 2, 3
+25oC
160
ns
1, 2, 3
+25 C
-
130
ns
VDD = 10V
1, 2, 3
+25
oC
-
80
ns
VDD = 15V
1, 2, 3
+25oC
-
60
ns
o
-
120
ns
o
VDD = 15V
VDD = 10V
1, 2, 3
+25 C
VDD = 15V
1, 2, 3
+25 C
-
100
ns
TTHL
TTLH
VDD = 10V
2, 3
+25oC
-
100
ns
VDD = 15V
2, 3
+25oC
-
80
ns
FCL
VDD = 10V
1, 2, 3
+25oC
8
-
MHz
VDD = 15V
1, 2, 3
+25oC
12
-
MHz
TW
TREM
TW
CIN
o
VDD = 5V
1, 2, 3
+25 C
-
200
ns
VDD = 10V
1, 2, 3
+25oC
-
80
ns
1, 2, 3
+25oC
-
60
ns
VDD = 5V
1, 2, 3
+25
oC
-
350
ns
VDD = 10V
1, 2, 3
+25oC
-
150
ns
1, 2, 3
o
+25 C
-
100
ns
VDD = 5V
1, 2, 3
+25
oC
-
140
ns
VDD = 10V
1, 2, 3
+25oC
-
60
ns
1, 2, 3
oC
-
40
ns
+25oC
-
7.5
pF
VDD = 15V
Input Capacitance
7
-
VDD = 15V
Minimum Input Pulse
Width
+25oC, +125oC,
-55oC
o
VDD = 15V
Reset Removal Time
1, 2
Any Input
1, 2
+25
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
IDD
N Threshold Voltage
VNTH
N Threshold Voltage
Delta
∆VTND
P Threshold Voltage
VTP
P Threshold Voltage
Delta
∆VTPD
Functional
F
CONDITIONS
NOTES
TEMPERATURE
VDD = 20V, VIN = VDD or GND
1, 4
+25oC
VDD = 10V, ISS = -10µA
1, 4
+25oC
VDD = 10V, ISS = -10µA
1, 4
+25oC
VSS = 0V, IDD = 10µA
1, 4
VSS = 0V, IDD = 10µA
VDD = 18V, VIN = VDD or GND
MAX
UNITS
-
25
µA
-2.8
-0.2
V
-
±1
V
+25oC
0.2
2.8
V
1, 4
+25oC
-
±1
V
1
+25oC
VOH >
VDD/2
VOL <
VDD/2
V
1, 2, 3, 4
+25oC
-
1.35 x
+25oC
Limit
ns
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
7-362
MIN
Specifications CD4020BMS, CD4024BMS, CD4040BMS
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
3. See Table 2 for +25oC limit.
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-2
IDD
± 1.0µA
Output Current (Sink)
IOL5
± 20% x Pre-Test Reading
IOH5A
± 20% x Pre-Test Reading
Output Current (Source)
TABLE 6. APPLICABLE SUBGROUPS
MIL-STD-883
METHOD
GROUP A SUBGROUPS
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
100% 5004
1, 7, 9, Deltas
CONFORMANCE GROUP
PDA (Note 1)
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
100% 5004
1, 7, 9, Deltas
100% 5004
2, 3, 8A, 8B, 10, 11
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample 5005
1, 7, 9
Sample 5005
1, 2, 3, 8A, 8B, 9
PDA (Note 1)
Final Test
Group A
Group B
Group D
READ AND RECORD
IDD, IOL5, IOH5A
Subgroups 1, 2, 3, 9, 10, 11
Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
Group E Subgroup 2
TEST
READ AND RECORD
MIL-STD-883
METHOD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
5005
1, 7, 9
Table 4
1, 9
Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
OPEN
GROUND
VDD
9V ± -0.5V
50kHz
1 - 7, 9, 12 - 15
10
PART NUMBER CD4020BMS
Static Burn-In 1
Note 1
1 - 7, 9, 12 - 15
8, 10, 11
16
Static Burn-In 2
Note 1
1 - 7, 9, 12 - 15
8
10, 11, 16
Dynamic BurnIn Note 1
-
8, 11
16
1 - 7, 9, 12 - 15
8
10, 11, 16
1, 2, 7
14
Irradiation
Note 2
PART NUMBER CD4024BMS
Static Burn-In 1
Note 1
3 - 6, 8 - 13
7-363
25kHz
Specifications CD4020BMS, CD4024BMS, CD4040BMS
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS (Continued)
OSCILLATOR
FUNCTION
OPEN
GROUND
VDD
Static Burn-In 2
Note 1
3 - 6, 8 - 13
7
1, 2, 14
Dynamic BurnIn Note 1
8, 10, 13
2, 7
14
3 - 6, 8 - 13
7
1, 2, 14
Irradiation
Note 2
9V ± -0.5V
50kHz
3 - 6, 9, 11, 12
1
1 - 7, 9, 12 - 15
10
25kHz
PART NUMBER CD4040BMS
Static Burn-In 1
Note 1
1 - 7, 9, 12 - 15
8, 10, 11
16
Static Burn-In 2
Note 1
1 - 7, 9, 12 - 15
8
10, 11, 16
Dynamic BurnIn Note 1
-
8, 11
16
1 - 7, 9, 12 - 15
8
10, 11, 16
Irradiation
Note 2
NOTE:
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,
VDD = 10V ± 0.5V
Functional Diagrams
VDD
14
VDD
16
9 Q1
14 STAGE
RIPPLE
COUNTER
4 Q6
6 Q7
13 Q8
12 Q9
14 Q10
15 Q11
1 Q12
2 Q13
3 Q14
11
12 BUFFERED OUTPUTS
5 Q5
9 Q1
10
12
7 Q4
Q1
11
1
7 STAGE
RIPPLE
COUNTER
INPUT
PULSES
RESET
Q2
9
Q3
6
2
Q4
5
Q5
4
Q6
7 BUFFERED OUTPUTS
10
INPUT
PULSES
7 Q2
INPUT
PULSES
6 Q3
12 STAGE
RIPPLE
COUNTER
RESET
VSS
CD4020BMS
NC = 8, 10, 13
11
7
8
VSS
VSS
CD4024BMS
7-364
2 Q6
13 Q8
12 Q9
14 Q10
15 Q11
1 Q12
RESET
8
3 Q5
4 Q7
3
Q7
5 Q4
CD4040BMS
12 BUFFERED OUTPUTS
VDD
16
CD4020BMS, CD4024BMS, CD4040BMS
Logic Diagrams
Ø1
Q1
Ø2
FF1
Ø*
Ø1
R*
Q2
Ø3
Q13
FF2
Q1
Ø2
R Q1
Ø14 Q14
FF14
Q2
Ø3
Q13
R
Ø14 Q14
R
FF3 - FF13
VDD
*INPUTS PROTECTED
BY COS/MOS PROTECTION
NETWORK
Q1
Q4
Q13
Q14
VSS
FIGURE 1. LOGIC DIAGRAM FOR CD4020BMS
Ø1
Q1
Ø2
FF1
Ø*
Ø1
R*
Q2
Ø3
Q6
FF2
Q1
Ø2
R Q1
Ø7
Q7
FF14
Q2
Ø3
Q6
Ø7
R
Q7
R
FF3 - FF6
VDD
*INPUTS PROTECTED
BY COS/MOS PROTECTION
NETWORK
Q2
Q1
Q3
Q6
Q7
VSS
FIGURE 2. LOGIC DIAGRAM FOR CD4024BMS
Ø1
Q1
Ø2
FF1
Ø*
Ø1
R*
Q2
Ø3
Q11
FF2
Q1
Ø2
R Q1
Ø7
Q12
FF12
Q2
Ø3
Q11
R
Ø7
Q12
R
FF3 - FF11
VDD
*INPUTS PROTECTED
BY COS/MOS PROTECTION
NETWORK
Q1
Q2
Q3
VSS
FIGURE 3. LOGIC DIAGRAM FOR CD4040BMS
7-365
Q11
Q12
CD4020BMS, CD4024BMS, CD4040BMS
30
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
25
20
15
10V
10
5
5V
0
5
10
15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
AMBIENT TEMPERATURE (TA) = +25oC
15.0
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
12.5
10.0
10V
7.5
5.0
2.5
5V
0
5
10
15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
FIGURE 4. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
FIGURE 5. MINIMUM OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-15
-10
-5
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-15
-10
-5
AMBIENT TEMPERATURE (TA) = +25oC
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
0
-5
-10
-15
-10V
-20
-25
-15V
-30
AMBIENT TEMPERATURE (TA) = +25oC
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
0
-5
-10V
150
SUPPLY VOLTAGE (VDD) = 5V
100
10V
15V
50
0
0
20
-10
-15V
-15
FIGURE 7. MINIMUM OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
PROPAGATION DELAY TIME (tPHL, tPLH) (ns)
(φ TO Q1)
TRANSITION TIME (tTHL, tTLH) (ns)
200
0
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
FIGURE 6. TYPICAL OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
AMBIENT TEMPERATURE (TA) = +25oC
0
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
AMBIENT TEMPERATURE (TA) = +25oC
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
Typical Performance Characteristics
AMBIENT TEMPERATURE (TA) = +25oC
300
SUPPLY VOLTAGE (VDD) = 5V
200
10V
100
15V
0
40
60
80
100
LOAD CAPACITANCE (CL) (pF)
FIGURE 8. TYPICAL TRANSITION TIME AS A FUNCTION OF
LOAD CAPACITANCE
20
40
60
80
LOAD CAPACITANCE (CL) (pF)
100
FIGURE 9. TYPICAL PROPAGATION DELAY TIME AS A
FUNCTION OF LOAD CAPACITANCE (φ TO Q1))
7-366
CD4020BMS, CD4024BMS, CD4040BMS
Typical Performance Characteristics
POWER DISSIPATION (PD) (µW)
105
104
8
6
4
AMBIENT TEMPERATURE (TA) = +25oC
2
SUPPLY VOLTAGE (VDD) = 5V
(Continued)
8
6
4
∅
∅
p
p
n
10V
R
2
103
∅
10V
8
6
4
5V
2
102
CD = 15pF
CL = 50pF
8
6
4
∅
n
∅
R
*
Q1
Q
R
∅
p
p
n
n
∅
∅
Q
2
10
2
1
4 68
2
4 68
2
4 68
2
4 68
2
* ON FIRST STAGE ONLY
4 68
10
102
103
104
INPUT PULSE FREQUENCY (fφ) (kHz)
105
FIGURE 10. TYPICAL DYNAMIC POWER DISSIPATION AS A
FUNCTION OF INPUT PULSE FREQUENCY FOR
CD4020BMS
FIGURE 11. DETAIL OF TYPICAL FLIP-FLOP STAGES
Chip Dimensions and Pad Layouts
Dimensions in parentheses are in millimeters
and are derived from the basic inch dimensions
as indicated. Grid graduations are in mils (10-3 inch)
DIMENSIONS AND PAD LAYOUT FOR CD4020BMS. DIMENSIONS AND PAD LAYOUT FOR CD4040BMS ARE IDENTICAL
METALLIZATION:
PASSIVATION:
BOND PADS:
DIMENSIONS AND PAD LAYOUT FOR CD4024BMSH
Thickness: 11kÅ − 14kÅ,
AL.
10.4kÅ - 15.6kÅ, Silane
0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches
7-367
CD4020BMS, CD4024BMS, CD4040BMS
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File Number
368