DATASHEET

CD4060BMS
CMOS 14 Stage Ripple-Carry
Binary Counter/Divider and Oscillator
December 1992
Pinout
Features
• High Voltage Type (20V Rating)
• Common Reset
• 12MHz Clock Rate at 15V
Q12 1
16 VDD
Q13 2
15 Q10
Q14 3
14 Q8
• Fully Static Operation
Q6 4
13 Q9
• Buffered Inputs and Outputs
Q5 5
12 RESET
• Schmitt Trigger Input Pulse Line
Q7 6
11 øI
Q4 7
10 ø0
VSS 8
9 ø0
• Standardized, Symmetrical Output Characteristics
• 100% Tested for Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
Functional Diagram
Oscillator Features
Q4
• All Active Components on Chip
Q5
• RC or Crystal Oscillator Configuration
Q6
• RC Oscillator Frequency of 690kHz Min. at 15V
Q7
R 12
14 STAGE
RIPPLE
COUNTER
AND
OSCILLATOR
Applications
• Control counters
øI 11
• Timers
Q8
Q9
Q10
Q12
• Frequency Dividers
VSS = 8
VDD = 16
• Time Delay Circuits
Q13
Q14
7
5
4
6
14
13
15
1
2
3
Description
CD4060BMS consists of an oscillator section and 14 ripple
carry binary counter stages. The oscillator configuration allows
design of either RC or crystal oscillator circuits. A RESET input
is provided which resets the counter to the all O’s state and disables the oscillator. A high level on the RESET line accomplishes the reset function. All counter stages are master slave
flip-flops. The state of the counter is advanced one step in
binary order on the negative transition of øI (and ø0). All inputs
and outputs are fully buffered. Schmitt trigger action on the
input pulse line permits unlimited input pulse rise and fall times.
ø0
9
ø0 10
The CD4060BMS is supplied in these 16 lead outline packages:
Braze Seal DIP
H4W
Frit Seal DIP
H1F
Ceramic Flatpack
H6W
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-949
File Number
3317
Specifications CD4060BMS
Absolute Maximum Ratings
Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . .
θja
θjc
Ceramic DIP and FRIT Package . . . . . 80oC/W
20oC/W
Flatpack Package . . . . . . . . . . . . . . . . 70oC/W
20oC/W
o
Maximum Package Power Dissipation (PD) at +125 C
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW
For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS (NOTE 1)
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
Input Leakage Current
IIL
VIN = VDD or GND
VDD = 20
VDD = 18V
Input Leakage Current
IIH
VIN = VDD or GND
VDD = 20
GROUP A
SUBGROUPS
LIMITS
TEMPERATURE
MIN
+25
-
10
µA
+125oC
-
1000
µA
3
-55oC
-
10
µA
1
+25o
C
-100
-
nA
2
+125oC
-1000
-
nA
3
-55oC
-100
-
nA
1
+25oC
-
100
nA
2
+125oC
-
1000
nA
-
100
nA
-
50
mV
-
V
3
Output Voltage
VOL15
VDD = 15V, No Load
1, 2, 3
+25oC, +125oC, -55oC
Output Voltage
VOH15
VDD = 15V, No Load (Note 3)
1, 2, 3
+25oC, +125oC, -55oC 14.95
Output Current (Sink)
(Excluding pins 9 & 10)
Output Current (Source)
(Excluding pins 9 & 10)
N Threshold Voltage
P Threshold Voltage
Functional
IOL5
VDD = 5V, VOUT = 0.4V
UNITS
1
-55oC
VDD = 18V
MAX
2
oC
1
+25oC
0.53
-
mA
IOL10
VDD = 10V, VOUT = 0.5V
1
+25oC
1.4
-
mA
IOL15
VDD = 15V, VOUT = 1.5V
1
+25oC
3.5
-
mA
1
+25oC
-
-0.53
mA
1
+25oC
-
-1.8
mA
IOH5A
IOH5B
VDD = 5V, VOUT = 4.6V
VDD = 5V, VOUT = 2.5V
IOH10
VDD = 10V, VOUT = 9.5V
1
+25oC
-
-1.4
mA
IOH15
VDD = 15V, VOUT = 13.5V
1
+25oC
-
-3.5
mA
1
+25oC
-2.8
-0.7
V
1
+25oC
0.7
2.8
V
VNTH
VPTH
F
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VDD = 2.8V, VIN = VDD or GND
7
+25oC
VDD = 20V, VIN = VDD or GND
7
+25oC
VDD = 18V, VIN = VDD or GND
8A
+125oC
VDD = 3V, VIN = VDD or GND
8B
-55oC
VOH > VOL <
VDD/2 VDD/2
V
Input Voltage Low
(Note 2)
VIL
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25oC, +125oC, -55oC
-
1.5
V
Input Voltage High
(Note 2)
VIH
VDD = 5V, VOH > 4.5V, VOL < 0.5V
1, 2, 3
+25oC, +125oC, -55oC
3.5
-
V
Input Voltage Low
(Note 2)
VIL
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25oC, +125oC, -55oC
-
4
V
Input Voltage High
(Note 2)
VIH
VDD = 15V, VOH > 13.5V,
VOL < 1.5V
1, 2, 3
+25oC, +125oC, -55oC
11
-
V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
7-950
3. For accuracy, voltage is measured differentially to VDD. Limit
is 0.050V max.
Specifications CD4060BMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS (NOTES 1, 2)
Propagation Delay
Input Pulse Operation
øI to Q4
TPHL1
TPLH1
VDD = 5V, VIN = VDD or GND
Propagation Delay
QN to QN + 1
TPHL2
TPLH2
VDD = 5V, VIN = VDD or GND
Propagation Delay
RESET
Transition Time
Maximum Input Pulse
Frequency
TPHL3
TTHL
TTLH
GROUP A
SUBGROUPS TEMPERATURE
10, 11
VDD = 5V, VIN = VDD or GND
VDD = 5V
VIN = VDD or GND
-55oC
+25oC
o
o
+125 C, -55 C
o
MIN
MAX
UNITS
-
740
ns
-
999
ns
-
200
ns
-
270
ns
9
+25 C
-
360
ns
10, 11
+125oC, -55oC
-
486
ns
-
200
ns
-
270
ns
o
9
10, 11
FØI
+125oC,
9
10, 11
VDD = 5V, VIN = VDD or GND
+25oC
9
LIMITS
+25 C
o
o
+125 C, -55 C
o
9
+25 C
3.5
-
MHz
10, 11
+125oC, -55oC
2.59
-
MHz
MIN
MAX
UNITS
-
5
µA
+125 C
-
150
µA
oC,
-
10
µA
NOTES:
1. VDD = 5V, CL = 50pF, RL = 200K
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
NOTES
VDD = 5V, VIN = VDD or GND
1, 2
TEMPERATURE
-55oC,
+25oC
o
VDD = 10V, VIN = VDD or GND
1, 2
-55
+25oC
+125 C
-
300
µA
-55oC, +25oC
-
10
µA
+125oC
-
600
µA
oC, +125oC,
-
50
mV
o
VDD = 15V, VIN = VDD or GND
Output Voltage
VOL
VDD = 5V, No Load
1, 2
1, 2
+25
-55oC
Output Voltage
VOL
VDD = 10V, No Load
1, 2
+25oC, +125oC,
-55oC
-
50
mV
Output Voltage
VOH
VDD = 5V, No Load
1, 2
+25oC, +125oC,
-55oC
4.95
-
V
Output Voltage
VOH
VDD = 10V, No Load
1, 2
+25oC, +125oC,
-55oC
9.95
-
V
Output Current (Sink)
(Excluding pins 9 & 10)
IOL5
VDD = 5V, VOUT = 0.4V
1, 2
+125oC
0.36
-
mA
0.64
-
mA
0.9
-
mA
1.6
-
mA
Output Current (Sink)
(Excluding pins 9 & 10)
-55
IOL10
VDD = 10V, VOUT = 0.5V
1, 2
oC
+125
-55
Output Current (Sink)
(Excluding pins 9 & 10)
IOL15
Output Current
(Source)
(Excluding pins 9 & 10)
IOH5A
Output Current
(Source)
(Excluding pins 9 & 10)
IOH5B
Output Current
(Source)
(Excluding pins 9 & 10)
IOH10
VDD = 15V, VOUT = 1.5V
VDD = 5V, VOUT = 4.6V
1, 2
1, 2
1, 2
2.4
-
mA
-55oC
4.2
-
mA
+125oC
-
-0.36
mA
-
-0.64
mA
-
-1.15
mA
-
-2.0
mA
-
-0.9
mA
-
-1.6
mA
+125
1, 2
oC
+125oC
-55
7-951
oC
+125oC
-55
VDD = 10V, VOUT = 9.5V
oC
oC
-55
VDD = 5V, VOUT = 2.5V
oC
oC
Specifications CD4060BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
SYMBOL
Output Current
(Source)
(Excluding pins 9 & 10)
IOH15
CONDITIONS
VDD =15V, VOUT = 13.5V
NOTES
TEMPERATURE
MIN
MAX
UNITS
1, 2
+125oC
-
-2.4
mA
-55 C
-
-4.2
mA
o
Input Voltage Low
VIL
VDD = 10V, VOH > 9V,
VOL < 1V
1, 2
+25oC, +125oC,
-55oC
-
3
V
Input Voltage High
VIH
VDD = 10V, VOH > 9V,
VOL < 1V
1, 2
+25oC, +125oC,
-55oC
+7
-
V
Drive Current at Pin 9
Oscillator Design
IOL
VDD = 5V, VO = .4V
3
+25oC
0.16
-
mA
3
+25oC
0.42
-
mA
VDD = 10V, VO = .5V
VDD = 15V, VO = 1.5V
Drive Current at Pin 9
Oscillator Design
IOH
VDD = 5V
VDD = 10V
VDD = 15V
Propagation Delay
Input Pulse øI to Q4
TPHL1
TPLH1
VDD = 10V
VDD = 15V
Propagation Delay
QN to QN + 1
TPHL2
TPLH2
VDD = 10V
Propagation Delay
RESET
Transition Time
Maximum Input Pulse
Frequency
Minimum RESET Pulse
Width
Minimum Input Pulse
Width
F = 100kHz
TPHL3
VDD = 15V
FØI
RC Operation CX Max
RX
CX
RC Operation Variation
of Frequency
(Unit-to-Unit)
CX = 200pF
RS = 560K
RX = 50k
1, 2, 3
-
-.42
mA
1, 2, 3
o
+25 C
-
1.0
mA
1, 2, 3
+25o
C
C
-
300
ns
1, 2, 3
+25
oC
-
200
ns
1, 2, 3
+25oC
-
100
ns
1, 2, 3
+25oC
-
160
ns
1, 2, 3
+25
oC
-
100
ns
VDD = 10V
1, 2, 3
+25o
C
-
100
ns
VDD = 15V
1, 2, 3
+25oC
-
80
ns
8
-
MHz
12
-
MHz
C
-
120
ns
oC
-
60
ns
VDD = 10V
VDD = 5V
o
1, 2, 3
+25 C
1, 2, 3
+25
oC
1, 2, 3
+25o
1, 2, 3
+25
VDD = 15V
1, 2, 3
+25o
C
-
40
ns
VDD = 5V
1, 2, 3
+25oC
-
100
ns
VDD = 10V
1, 2, 3
+25oC
-
40
ns
1, 2, 3
oC
-
30
ns
2, 3
+25oC
-
20
MΩ
VDD = 10V, CX = 50µF
2, 3
+25
oC
-
20
MΩ
VDD = 15V, CX = 10µF
2, 3
+25oC
-
10
MΩ
2, 3
+25
oC
-
1000
µF
+25
oC
-
50
µF
2, 3
+25
oC
-
50
µF
VDD = 10V
2, 3
+25oC
530
810
ns
VDD = 15V
2, 3
+25oC
690
940
ns
2, 3
+25
oC
18
25
kHz
2, 3
+25
oC
20
26
kHz
2, 3
+25oC
21.1
27
kHz
2, 3
+25
oC
-
2
kHz
+25
oC
-
1
kHz
VDD = 5V, CX = 10µF
VDD = 5V, RX = 500kΩ
2, 3
VDD = 5V
VDD = 10V
VDD = 15V
Variation of Frequency
with Voltage Change
(Same Unit)
mA
+25o
+25 C
VDD = 15V, RX = 300kΩ
RX = 5kΩ
CX = 15pF
mA
-.16
1, 2, 3
VDD = 10V
VDD = 10V, RX = 300kΩ
Maximum Oscillator
Frequency (Note 4)
-
-
ns
VDD = 15V
RC Operation RX Max
-1.0
80
VDD = 10V
TW
+25 C
+25oC
-
VDD = 15V
TW
3
1, 2, 3
o
VDD = 15V
TTHL
TTLH
o
CX = 200pF 5V to 10V
RS = 560K
10V to 15V
RX = 50k
2, 3
7-952
+25
Specifications CD4060BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
SYMBOL
Input Capacitance
CIN
CONDITIONS
Any Input
NOTES
TEMPERATURE
MIN
MAX
UNITS
1, 2
+25oC
-
7.5
pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. RC Oscillator applications are not recommended at supply voltages below 7V for RX < 50kΩ.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
MIN
MAX
UNITS
IDD
VDD = 20V, VIN = VDD or GND
1, 4
+25oC
-
25
µA
o
-2.8
-0.2
V
o
Supply Current
N Threshold Voltage
VNTH
N Threshold Voltage
Delta
∆VTN
VDD = 10V, ISS = -10µA
1, 4
+25 C
-
±1
V
P Threshold Voltage
VPTH
VSS = 0V, IDD = 10µA
1, 4
+25oC
0.2
2.8
V
P Threshold Voltage
Delta
∆VTP
Functional
F
VDD = 10V, ISS = -10µA
1, 4
VSS = 0V, IDD = 10µA
VDD = 18V, VIN = VDD or GND
+25 C
1, 4
+25 C
-
±1
V
1
+25oC
VOH >
VDD/2
VOL <
VDD/2
V
1, 2, 3, 4
+25oC
-
1.35 x
+25oC
Limit
ns
o
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
3. See Table 2 for +25oC limit.
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-2
IDD
± 1.0µA
Output Current (Sink)
IOL5
± 20% x Pre-Test Reading
IOH5A
± 20% x Pre-Test Reading
Output Current (Source)
TABLE 6. APPLICABLE SUBGROUPS
MIL-STD-883
METHOD
GROUP A SUBGROUPS
Initial Test (Pre Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In)
100% 5004
1, 7, 9
IDD, IOL5, IOH5A
100% 5004
1, 7, 9, Deltas
CONFORMANCE GROUP
PDA (Note 1)
Interim Test 3 (Post Burn-In)
100% 5004
1, 7, 9
100% 5004
1, 7, 9, Deltas
100% 5004
2, 3, 8A, 8B, 10, 11
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11
Subgroup B-5
Sample 5005
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
Subgroup B-6
Sample 5005
1, 7, 9
Sample 5005
1, 2, 3, 8A, 8B, 9
PDA (Note 1)
Final Test
Group A
Group B
Group D
7-953
READ AND RECORD
IDD, IOL5, IOH5A
Subgroups 1, 2, 3, 9, 10, 11
Subgroups 1, 2 3
Specifications CD4060BMS
TABLE 6. APPLICABLE SUBGROUPS (Continued)
MIL-STD-883
METHOD
CONFORMANCE GROUP
GROUP A SUBGROUPS
READ AND RECORD
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS
TEST
READ AND RECORD
MIL-STD-883
METHOD
PRE-IRRAD
POST-IRRAD
PRE-IRRAD
POST-IRRAD
5005
1, 7, 9
Table 4
1, 9
Table 4
Group E Subgroup 2
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
OPEN
GROUND
VDD
Static Burn-In 1 Note 1
1 - 7, 9, 10, 13 - 15
8, 11, 12
16
Static Burn-In 2 Note 1
1 - 7, 9, 10, 13 - 15
8
11, 12, 16
Dynamic Burn-In Note 1
-
8, 12
16
1 - 7, 9, 10, 13 - 15
8
11, 12, 16
Irradiation Note 2
9V ± -0.5V
50kHz
25kHz
1 - 7, 9, 10, 13 - 15
11
-
NOTES:
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ±
0.5V
Logic Diagram
ø0
9
ø 0 10
*** ø I 11
*
*
ø1 Q1
*
FF1
ø1 Q1
ø2
Q13
FF2-FF13
ø2
Q13
ø14 Q14
FF14
ø14 Q14
Q14
*
**
RESET 12
Q4 - Q10
Q12, Q13
**R = HIGH DOMINATES (RESETS ALL STAGES)
VDD
***COUNTER ADVANCES ONE BINARY COUNT
ON EACH NEGATIVE - GOING TRANSITION
OF øI (AND øO)
*ALL INPUTS ARE PROTECTED
BY CMOS PROTECTION
NETWORK
VSS
DETAIL OF TYPICAL FLIP-FLOP STAGE
ø
ø
p
p
R
n
n
Q
R
ø
ø
ø
ø
p
p
n
n
ø
ø
7-954
Q
CD4060BMS
AMBIENT TEMPERATURE (TA) = +25oC
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
25
20
15
10V
10
5
5V
0
5
10
AMBIENT TEMPERATURE (TA) = +25oC
15.0
GATE-TO-SOURCE VOLTAGE (VGS) = 15V
12.5
10.0
10V
7.5
5.0
2.5
15
5V
0
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
FIGURE 1. TYPICAL N-CHANNEL OUTPUT LOW SINK
CURRENT CHARACTERISTICS
0
AMBIENT TEMPERATURE (TA) = +25oC
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
FIGURE 2. MINIMUM N-CHANNEL OUTPUT LOW (SINK)
CURRENT CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-15
-10
-5
0
-5
-10
-15
-10V
-20
-25
-15V
-30
-5
-10V
PROPAGATION DELAY TIME (tPLH, tPHL) (ns)
PROPAGATION DELAY TIME (tPLH, tPHL) (ns)
SUPPLY VOLTAGE (VDD) = 5V
100
10V
50
15V
40
60
80
-15
FIGURE 4. MINIMUM P-CHANNEL OUTPUT HIGH (SOURCE)
CURRENT CHARACTERISTICS
150
20
-10
-15V
AMBIENT TEMPERATURE (TA) = +25oC
0
0
GATE-TO-SOURCE VOLTAGE (VGS) = -5V
FIGURE 3. TYPICAL P-CHANNEL OUTPUT HIGH (SOURCE)
CURRENT CHARACTERISTICS
0
0
AMBIENT TEMPERATURE (TA) = +25oC
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
-15
-10
-5
5
10
15
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
30
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
OUTPUT LOW (SINK) CURRENT (IOL) (mA)
Typical Performance Curves
100
LOAD CAPACITANCE (CL) (pF)
FIGURE 5. TYPICAL PROPAGATION DELAY TIME (QN TO
QN+1) AS A FUNCTION OF LOAD CAPACITANCE
7-955
AMBIENT TEMPERATURE (TA) = +25oC
700
600
500
SUPPLY VOLTAGE (VDD) = 5V
400
300
10V
200
100
0
15V
0
20
40
60
80
LOAD CAPACITANCE (CL) (pF)
100
FIGURE 6. TYPICAL PROPAGATION DELAY TIME (Ø1 TO Q4
OUTPUT) AS A FUNCTION OF LOAD
CAPACITANCE
CD4060BMS
(Continued)
105
TRANSITION TIME (tTHL, tTLH) (ns)
AMBIENT TEMPERATURE (TA) = +25oC
200
SUPPLY VOLTAGE (VDD) = 5V
150
100
10V
15V
50
0
0
20
DYNAMIC POWER DISSIPATION (PD) (µW)
Typical Performance Curves
8
6
4
2
104
SUPPLY VOLTAGE (VDD) = 15V
8
6
4
10V
2
5V
10V
103
8
6
4
2
LOAD CAPACITANCE
102
8
6
4
CL = 50pF
CL = 15pF
2
10
40
60
80
100
LOAD CAPACITANCE (CL) (pF)
AMBIENT TEMPERATURE (TA) = +25oC
2
4 6 8
0.1
2
1
4 6 8
2
10
4 6 8
102
2
4 6 8
103
2
4 6 8
104
INPUT FREQUENCY (føI) (kHz)
FIGURE 7. TYPICAL TRANSITION TIME AS A FUNCTION OF
LOAD CAPACITANCE
FIGURE 8. TYPICAL DYNAMIC POWER DISSIPATION AS A
FUNCTION OF INPUT FREQUENCY
Test Circuits
VDD
500µF
ID
CL
CL
CL
CL
CL
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
CL
CX
CL
CL
RX
RS
CL
11
10
9
CL
NOTE:
RS IS 2RX TO 10RX
T = 2.2 RXCX
PULSE
GENERATOR
12
FIGURE 9.
DYNAMIC POWER DISSIPATION TEST CIRCUIT
FIGURE 10. TYPICAL RC CIRCUIT
7-956
CD4060BMS
Test Circuits
(Continued)
11
C1
9
10
RC
RS
C2
NOTE:
CXTAL = C1 + C2 + CSTRAY
RC = Broader frequency
response
RS = Current limiting
FIGURE 11. TYPICAL CRYSTAL CIRCUIT
Chip Dimensions and Pad Layout
Dimension in parenthesis are in millimeters
and are derived from the basic inch dimensions
as indicated. Grid graduations are in mils (10-3 inch).
METALLIZATION:
PASSIVATION:
Thickness: 11kÅ − 14kÅ,
AL.
10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
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TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
957
ASIA
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