DATASHEET

Radiation Hardened High-Speed, Dual Output PWM
HS-1825ARH, HS-1825AEH
Features
The Radiation Hardened HS-1825ARH, HS-1825AEH Pulse
Width Modulator is designed to be used in high frequency
switched-mode power supplies and can be used in either
current-mode or voltage-mode. It is well suited for single-ended
boost converter applications.
• Electrically Screened to DLA SMD # 5962-99558
Device features include a precision voltage reference, low
power start-up circuit, high frequency oscillator, wide-band
error amplifier, and fast current-limit comparator. The use of
proprietary process capabilities and unique design techniques
results in fast propagation delay times and high output current
over a wide range of output voltages.
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Maximum Total Dose. . . . . . . . . . . . . . . . . . . . 300 krad(SI)
- Vertical Architecture Provides Low Dose Rate Immunity
- DI RSG Process Provides Latch-Up Immunity
• Low Start-Up Current . . . . . . . . . . . . . . . . . . . . . . . 100µA (Typ)
• Fast Propagation Delay . . . . . . . . . . . . . . . . . . . . . . . 80ns (Typ)
• 12V to 30V Operation
Constructed with the Intersil Rad Hard Silicon Gate (RSG)
Dielectric Isolation BiCMOS process, the HS-1825ARH,
HS-1825AEH has been specifically designed to provide highly
reliable performance when exposed to harsh radiation
environments.
• 1A (Peak) Dual Output Drive Capability
Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
numbers listed below must be used when ordering.
• Switching Frequencies to 500kHz
Detailed Electrical Specifications for the HS-1825ARH,
HS-1825AEH are contained in SMD 5962-99558. That
document may be easily downloaded from our website.
www.intersil.com/
• 5.1V Reference
• Undervoltage Lockout
• Programmable Soft-Start
• Latched Overcurrent Comparator with Full Cycle Restart
• Programmable Leading Edge Blanking Circuit
Applications
• Current or Voltage Mode Switching Power Supplies
• Motor Speed and Direction Control
Pin Configuration
HS-1825ARH, HS-1825AEH
SBDIP (CDIP2-T16) AND FLATPACK (CDFP4-F16)
TOP VIEW
INV 1
16 VREF 5.1V
NON-INV 2
15 VCC
E/A OUT 3
14 OUTPUT B
CLOCK 4
13 VC
RT 5
12 POWER GND
CT 6
11 OUTPUT A
RAMP 7
SOFT START 8
10 GND
9 ILIM/SD
NOTE: Grounding the Soft-Start pin does not inhibit the outputs. The outputs may be inhibited by applying >1.26V to the ILIM/SD pin.
May 10, 2012
FN4561.9
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
HS-1825ARH, HS-1825AEH
Ordering Information
INTERNAL
MKT. NUMBER
(Note)
ORDERING NUMBER
TEMP. RANGE (°C)
PACKAGE
(RoHS Compliant)
PKG.
DWG. #
5962F9955801V9A
HS0-1825ARH-Q
-50 to +125
5962F9955802V9A
HS0-1825AEH-Q
-50 to +125
HS0-1825ARH/Sample
HS0-1825ARH/Sample
-50 to +125
5962F9955801VEC
HS1-1825ARH-Q
-50 to +125
16 Ld SBDIP
D16.3
5962F9955802VEC
HS1-1825AEH-Q
-50 to +125
16 Ld SBDIP
D16.3
5962F9955801QEC
HS1-1825ARH-8
-50 to +125
16 Ld SBDIP
D16.3
5962F9955801VXC
HS9-1825ARH-Q
-50 to +125
16 Ld Flatpack
K16.A
5962F9955802VXC
HS9-1825AEH-Q
-50 to +125
16 Ld Flatpack
K16.A
5962F9955801QXC
HS9-1825ARH-8
-50 to +125
16 Ld Flatpack
K16.A
HS1-1825ARH/Proto
HS1-1825ARH/Proto
-50 to +125
16 Ld SBDIP
D16.3
HS9-1825ARH/Proto
HS9-1825ARH/Proto
-50 to +125
16 Ld Flatpack
K16.A
NOTE: These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with
both SnPb and Pb-free soldering operations.
Typical Performance Curves
100
10k
C220pF
DMAX
90
C1000pF
1k
DMAX (%)
FREQUENCY (kHz)
C470pF
C2200pF
C4700pF
100
80
70
60
C22nF
10
C10nF
1
10
Rt TIMING RESISTANCE (kΩ)
FIGURE 1. OSCILLATOR FREQUENCY vs Rt AND Ct
2
100
50
1
10
Rt TIMING RESISTANCE (kΩ)
100
FIGURE 2. MAXIMUM DUTY CYCLE vs Rt
FN4561.9
May 10, 2012
HS-1825ARH, HS-1825AEH
Die Characteristics
DIE DIMENSIONS
Backside Finish
4710µm x 3570µm (185 mils x 140 mils)
Thickness: 483µm ±25.4µm (19 mils ±1 mil)
Silicon
ASSEMBLY RELATED INFORMATION
INTERFACE MATERIALS
Substrate Potential
Glassivation
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ±1.0kÅ
Unbiased (DI)
ADDITIONAL INFORMATION
Top Metallization
Type: ALSiCu
Thickness: 16.0kÅ ±2kÅ
Worst Case Current Density
<2.0 x 105 A/cm2
Substrate
Radiation Hardened Silicon Gate,
Dielectric Isolation
Transistor Count
225
Metallization Mask Layout
HS-1825ARH,HS-1825AEH
(4) CLK/LEB
RT (5)
(3) EAOUT
CT (6)
(2) IN+
RAMP (7)
(1) INSS (8)
(16) VREF
ILIM (9)
OSCGND
(NOTE 1)
(15) VCC
GND (10)
(14) OUTB
OUTA (11)
(12) PGND
(NOTE 2)
PGND (12)
(NOTE 2)
(13) VC
(NOTE 2)
VC (13)
(NOTE 2)
NOTES:
1. This is the oscillator ground (OSCGND) bond pad and must be
connected to GND.
2. PGND and VC each require two bond pad connections.
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Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted
in the quality certifications found at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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FN4561.9
May 10, 2012