Datasheet

PHOTOMULTIPLIER TUBES
R2658
R2658P (for Photon Counting)
High QE in Near IR Region Due to InGaAs (Cs) Photocathode
For Spectrophotometers with 185 to 1010 nm Range,
Fluorescence and Laser Applications and Photon Counting (R2658P)
in the Near Infrared Region, etc.
FEATURES
●High QE in Near IR Region .......................... QE 0.13% at 1000 nm
●Wide Wavelength Range ........................................ 185 to 1010 nm
●Low Dark Current .......................................... 1 nA at 1250 V (Typ.)
The R2658 and the R2658P are 28 mm (1-1/8 inch) diameter sideon photomultiplier tubes using a newly developed InGaAs
semiconductor photocathode.
The InGaAs photocathode is sensitive from UV to near IR
radiations (as long as over 1010 nm) longer than wavelength limit
of GaAs photocathode, and yet offers low dark current. The dark
current is 2 orders lower than the commercial S-1 photocathode.
Therefore, they are well suited for low light detection in the near IR
region including fluorescence lifetime measurements. Time
response, gain, and dimensions are identical with the conventional
28 mm (1-1/8 inch) diameter side-on tubes with a GaAs
photocathode.
The R2658P is a photon counting version of the R2658 with low
dark counts.
Figure 1: Typical Spectral Response
SPECIFICATIONS
TPMSB0150EB
100
CATHODE
RADIANT SENSITIVITY
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area
Window Material
Secondary Emitting Surface
Dynode
Structure
Number of Stages
Direct
Anode to Last Dynode
Interelectrode
Capacitances Anode to All Other Electrode
Base
Description / Value Unit
185 to 1010
nm
400
nm
InGaAs (Cs)
—
3 × 12
mm
UV glass
—
Cu-BeO
—
Circular-cage
—
9
—
Approx. 4
pF
Approx. 6
pF
11-pin base
JEDEC No. B11-88
—
Weight
Approx. 45
g
Suitable Socket (Option)
E678-11A
—
E717-63
—
Suitable Socket Assembly (Option)
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
GENERAL
10
QUANTUM
EFFICIENCY
1
0.1
0.01
100 200 300 400 500 600 700 800 900 1000 1100
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2013 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBES
R2658, R2658P (For Photon Counting)
MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage
Average Anode
NOTES
Value
Unit
A: Averaged over any interval of 30 seconds maximum.
Between Anode and Cathode
1500
Vdc
Between Anode and Last Dynode
250
Vdc
1
µA
B: The light source is a tungsten filament lamp operated at
a distribution temperature of 2856 K. Supply voltage is
100 volts between the cathode and all other electrodes
connected together as anode.
-30 to +50
°C
Parameter
Current A
Ambient Temperature
D: Measured with the same light source as Note B and
with the voltage distribution ratio shown in Table 1 below.
CHARACTERISTICS (at 25°C)
Parameter
Min.
Typ.
Max.
Unit
Quantum at 330 nm
—
14
—
%
Efficiency at 1000 nm
0.02
0.13
—
%
50
100
—
µA/lm
Luminous B
at 194 nm
—
20
—
mA/W
at 254 nm
—
23
—
mA/W
at 400 nm
—
40
—
mA/W
at 633 nm
—
19
—
mA/W
at 852 nm
—
7.6
—
mA/W
at 1000 nm
0.16
1
—
mA/W
0.25
0.4
—
—
5
16
—
A/lm
at 194 nm
—
3.2 × 103
—
A/W
at 254 nm
—
3.7 × 103
—
A/W
—
6.4 ×
103
—
A/W
—
3.0 ×
103
—
A/W
—
1.2 ×
103
—
A/W
—
1.6 ×
102
—
A/W
Gain D
—
1.6 ×
105
—
—
Anode Dark Current E
—
1
10
nA
Anode Dark Count (for the R2658P) F
—
50
300
s-1
ENI (Equivalent Noise Input) G
—
1.1 × 10-15
—
W
—
2.0
—
ns
—
20
—
ns
Anode Current Current Hysteresis
—
2
—
%
Stability K
—
2
—
%
Cathode
Sensitivity
Radiant
Red / White
Ratio C
Luminous D
Anode
Sensitivity
Radiant
at 400 nm
at 633 nm
at 852 nm
at 1000 nm
Anode Pulse
Time
Rise Time H
Response D
Electron Transit Time J
Voltage Hysteresis
Table 1: Voltage Distribution Ratio
Electrodes
Distribution
Ratio
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9
1
1
1
1
Supply Voltage= 1250 Vdc
K: Cathode, Dy: Dynode, P: Anode
1
C: Red / white ratio is the quotient of the cathode current
measured using a red filter (Toshiba R-68) interposed
between the light source and the tube by the cathode
current measured with the filter removed under the same
condition as Note B.
1
1
1
1
P
1
E: Measured with the same supply voltage and the voltage
distribution ratio as Note D after 30 minute storage in
the darkness.
F: Measured at the voltage producing the gain of 1 × 106
and the voltage distribution ratio shown in table 1 below.
The photocathode is cooled at -20 °C.
G: ENI is an indication of the photo-limited signal-to-noise
ratio. It refers to the amount of light in watts to produce a
signal-to-noise ratio of unity in the output of a
photomultiplier tube.
ENI =
2q•ldb•G•∆f
S
where q = Electronic charge (1.60 × 10-19 coulomb)
ldb = Anode dark current (after 30 minute storage)
in amperes
G = Gain
∆f = Bandwidth of the system in hertz. 1 hertz is
used.
S = Anode radiant sensitivity in amperes per watt
at the wavelength of peak response.
H: The rise time is the time for the output pulse to rise from
10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse.
J: The electron transit time is the interval between the
arrival of delta function light pulse at the entrance
window of the tube and the time when the anode output
reaches the peak amplitude. In measurement, the whole
photocathode is illuminated.
K: Hysteresis is temporary instability in anode current after
light and voltage are applied.
Figure 2: Anode Luminous Sensitivity and
Gain Characteristics
Figure 3: Typical Time Response
TPMSB0152EB
106
200
102
105
100
80
60
101
G
L
CA
PI
DE
SE
DE
TY
TRANSIT
VI
TI
A
L
CA
SE
103
NO
PI
TY
UM
A
M
NI
I
10-1
M
40
104
I
NS
NO
100
V
TI
I
NS
TY
Y
IT
TIME (ns)
N
AI
GAIN
ANODE LUMINOUS SENSITIVITY (A/lm)
TPMSB0151EB
103
102
TIME
20
10
8
6
4
10-2
RISE TIM
101
E
2
10-3
500
700
1000
1500
100
2000
1
500
700
SUPPLY VOLTAGE (V)
1000
1500
SUPPLY VOLTAGE (V)
Figure 5: Typical Temperature Characteristic of
Dark Current and Dark Count (R2658P)
Figure 4: Temperature Coefficient
TPMSB0153EA
TPMSB0154EC
0.8
10-6
106
10-7
105
-0.8
-1.0
-1.2
R2
65
8P
T
EN
RR
103
10-10
102
10-11
101
-1.4
-1.6
400
500
600
700
800
WAVELENGTH (nm)
900
1000
10-12
-30
-20
-10
0
10
20
30
TEMPERATURE (°C)
40
100
50
ANODE DARK COUNT (s-1)
-0.6
10-9
CU
-0.4
104
DA
RK
-0.2
10-8
O
F
0
CO
UN
T
0.2
DA
RK
0.4
ANODE DARK CURRENT (A)
TEMPERATURE COEFFICIENT (%/°C)
0.6
PHOTOMULTIPLIER TUBES
R2658, R2658P (For Photon Counting)
Figure 6: Dimensional Outline and Basing Diagram (Unit: mm)
T9
BULB
28.5 ± 1.5
3 MIN.
PHOTOCATHODE
DY5
5
DY6
6
7
80 MAX.
94 MAX.
49.0 ± 2.5
12 MIN.
8 DY8
DY3 3
DY2
5
DY7
DY4 4
6
7
9 DY9
2
8
10 P
1
2
1
9
11
ANODE
K
DY1
1 to 9: DYNODES
3
4
DIRECTION OF LIGHT
BULB
SHIELD
GRILL
PHOTOCATHODE
DIRECTION OF
LIGHT
Detail of Tube
(Cross Section of Top View)
32.2 ± 0.5
11 PIN BASE
JEDEC No. B11-88
TPMSA0012EC
TPMSC0040EA
Figure 7: Optional Accessories (Unit: mm)
(a) E678-11A (Socket)
(a) E717-63 (Socket Assembly)
49
PMT
38
3.5
33.0 ± 0.3
SOCKET
PIN No.
10
P
DY9
9
DY8
8
DY7
7
3.5
33
5
5
38.0 ± 0.3
49.0 ± 0.3
R10
C3
R9
C2
R8
C1
SIGNAL GND
SIGNAL OUTPUT
RG-174/U (BLACK)
POWER SUPPLY GND
AWG22 (BLACK)
R7
29
DY6
6
DY5
5
DY4
4
DY3
3
HOUSING
(INSULATOR)
DY2
2
POTTING
COMPOUND
DY1
K
1
4
4
29
R6 R to R10 : 330 kΩ
C1 to C3 : 0.01 µF
18
R5
TACCA0064EA
450 ± 10
30
+0
-1
R4
31.0 ± 0.5
R3
R2
R1
11
-HV
AWG22 (VIOLET)
TACCA0002EG
Warning–Personal Safety Hazards
Electrical Shock–Operating voltages applied to this
device present a shock hazard.
HAMAMATSU PHOTONICS K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
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TPMS1082E01
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected]
JUN. 2013 IP
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, 27 Dongsanhuan Road North, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected]
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