Datasheet

MULTIANODE
PHOTOMULTIPLIER TUBE
R7600U-M4 SERIES
2 × 2 Multianode, High Speed Response, Low Cross-talk, 30 mm Square
Bialkali and Multialkali Photocathode,
Metal Channel Dynode 10-stage, Head-on Type
FEATURES
●2 × 2 Multianode, Anode Size: 9 mm × 9 mm / Anode
●Effective Area: 18 mm × 18 mm
●High Speed Response
●Low Cross-talk: 2 % Typ.
●High Cathode Sensitivity
Luminous 200 µA/lm Typ. (-01 Type)
Luminous 500 µA/lm Typ. (-20 Type)
APPLICATIONS
●High Energy Physics
●Scintillation Counting
●Flow Cytometer (-01, -20 Type)
●DNA Sequencer (-01, -20 Type)
Figure 1: Typical Spectral Response
TPMHB0807EA
1000
-200 TYPE
100
-100 TYPE
10
-00 TYPE
-03 TYPE
1
0.1
CATHODE RADIANT SENSITIVITY
QUANTUM EFFICIENCY
0.01
100 200 300 400 500 600 700
WAVELENGTH (nm)
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
1000
TPMHB0745EC
100
10
-04 TYPE
-01 TYPE
-20 TYPE
1
0.1
CATHODE RADIANT SENSITIVITY
QUANTUM EFFICIENCY
800 900 1000
0.01
100 200 300 400 500 600 700
800 900 1000
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.
MULTIANODE PHOTOMULTIPLIER TUBE
R7600U-M4 SERIES
Spectral Response
Type No.
Range
R7600U-00-M4
R7600U-01-M4
R7600U-03-M4
R7600U-04-M4
R7600U-20-M4
R7600U-100-M4
R7600U-200-M4
(nm)
300 to 650
300 to 850
185 to 650
185 to 850
300 to 920
300 to 650
300 to 650
A
B
C
Maximum Ratings
Cathode Characteristics
Anode to
Supply Average Luminous
Red/
Blue
Dynode Voltage Anode
PhotoSensitivity White Radiant Cathode
Between
Peak
Window
Index Ratio
Supply
Wavelength cathode Material Structure Anode Output
(CS 5-58) (R-68)
Voltage
/ Stages and Current Min. Typ. Typ.
Material
Typ.
Typ.
Cathode in Total
(nm)
420
400
420
400
530
400
400
BA
MA
BA
MA
MA
SBA
UBA
K
K
U
U
K
K
K
MC/10
MC/10
MC/10
MC/10
MC/10
MC/10
MC/10
(V)
900
900
900
900
900
900
900
(mA) (µA/lm) (µA/lm)
80
60
0.1
200
150
0.1
80
60
0.1
200
150
0.1
500
350
0.1
105
90
0.1
135
110
0.1
9.5
—
9.5
—
—
13.5
15.5
—
0.2
—
0.2
0.4
—
—
(mA/W)
80
65
80
65
78
110
130
(V)
800
800
800
800
800
800
800
NOTE: A BA: Bialkali, MA: Multialkali, SBA: Super Bialkali, UBA: Ultra Bialkali
B K: Borosilicate glass, U: UV glass
C MC: Metal channel
Figure 2: Typical Gain
108
Figure 3: Time Response (Example)
TPMHB0313EA
TPMHB0746EB
-00/-03 TYPE
106
GAIN
20 (mV/div.)
107
105
SUPPLY VOLTAGE: 800 V
RISE TIME: 1176 ps
FALL TIME: 1453 ps
WIDTH: 2077 ps
RL: 50 Ω
-01/-04/-20/-100/-200 TYPE
104
103
2 (ns/div.)
102
400
600
800
1000
SUPPLY VOLTAGE (V)
Figure 4: TTS Characteristic (Example)
Figure 5: Pulse Linearity per Channel (Example)
TPMHB0314EA
TYPE: R7600U-00-M4
SUPPLY VOLTAGE: 800 V
FWHM: 310 ps
FWTM: 631 ps
103
102
101
TPMHB0743EA
0
DEVIATION (%)
RELATIVE COUNTS
104
5
-5
-10
-15
PULSE WIDTH: 50 ns
REPETITION: 1 kHz
SUPPLY VOLTAGE: 800 V
DIVIDER RATIO 1.5: 1.5: 1.5: 1 ... 1: 1: 1
-20
100
-25
TIME (0.5 ns/div)
1
10
OUTPUT CURRENT (mA)
100
Anode Characteristics
Pulse Linearity
per Channel
Time
Response
Dark Current
Crossper Channel Rise Transit
Gain
talk
2%
5%
(After 30 min) Time Time TTS
Deviation Deviation
Typ. Max. Typ. Typ. Typ.
Min. Typ.
Typ.
(%)
(A/lm) (A/lm)
(mA)
(nA) (nA) (ns) (ns) (ns) (mA)
140 1.8 × 106 0.5
5
25
200 1.0 × 106 2.5
12.5
50
140 1.8 × 106 0.5
5
25
10
30
200 1.0 × 106 2.5
12.5 1.2 9.5 0.36
50
2
500 1.0 × 106 2.5
12.5
100
140 1.3 × 106 0.5
5
25
175 1.3 × 106 0.5
5
25
Luminous
Uniformity
Between
Operating
Each Anode
Storage
Ambient
Temperature
Temperature
Typ. Max.
(°C)
(°C)
1: 1.5
1: 2
1: 1.5
1: 2 1: 3 -30 to +50 -30 to +50
1: 2
1: 1.5
1: 1.5
Type No.
R7600U-00-M4
R7600U-01-M4
R7600U-03-M4
R7600U-04-M4
R7600U-20-M4
R7600U-100-M4
R7600U-200-M4
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
Ratio
K
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
Dy10
1
1
1
1.5
1.5
1.5
1
1
1
1
1
Supply Voltage: 800 V, K: Cathode, Dy: Dynode, P: Anode
Figure 6: Anode Uniformity (Example)
P
Figure 7: Anode Cross-talk (Example)
82
95
0.1
0.9
97
100
1.3
100
Supply Voltage: -800 V
Light Source: Lamp (uniform DC light)
Wavelength: 400 nm
Full Illumination
Supply Voltage: -800 V
Light Source: Lamp (uniform DC light)
Wavelength: 400 nm
Spot Illumination: 9 mm × 9 mm
30.0 ± 0.5
20.32
2.54 PITCH
CUT (IC)
P1
CUT (IC)
CUT (IC)
CUT (IC)
P4
CUT (IC)
PHOTOCATHODE
4 MAX.
15- 0.45
P1
P3
P4
18 MIN.
TOP VIEW
INSULATION COVER
SIDE VIEW
1 2 3 4 5 6 7 8 9
32
10
11
31
30
12
13
29
GUIDE
CORNER
28
14
15
27
16
26
25 24 23 22 21 20 19 18 17
CUT (IC)
P2
CUT (IC)
CUT (IC)
CUT (IC)
P3
CUT (IC)
CUT (K)
Dy10
Dy9
Dy8
Dy7
Dy6
Dy5
CUT (IC)
CUT (K)
18 MIN.
PHOTOCATHODE
P2
K
0.6 ± 0.4
4.4 ± 0.7
20.32
22.0 ± 0.5
18 MIN.
12.0 ± 0.5
25.7 ± 0.5
CUT (IC)
CUT (IC)
Dy1
Dy2
Dy3
Dy4
CUT (IC)
CUT (K)
Figure 8: Dimensional Outline and Basing Diagram (Unit: mm)
BOTTOM VIEW
K
: Photocathode
Dy : Dynode
P
: Anode
CUT : Short Pin
IC : Internal Connection
(Do not Use)
BASING DIAGRAM
TPMHA0297EI
MULTIANODE PHOTOMULTIPLIER TUBE
R7600U-M4 SERIES
[ACCESSORIES]
(Unit: mm) SOLD SEPARATELY
● Socket Assembly E678-32B
22.86
4.45 2.92
12.7
20.32
22.86
2.54
20.32
0.51
1.57
12.7
MATERIAL: GLASS EPOXY
TACCA0094ED
● D Type Socket Assembly E7083
PMT
30.0 ± 0.5
30.0 ± 0.5
PIN No.1
HOUSING
(INSULATOR)
SOCKET
PIN No.
SIGNAL GND
27
P4
15
P3
11
SIGNAL OUTPUT
P2 0.8D-QEV (GRAY)
31
P1
15.0 ± 0.5
P4 P3 P2 P1
450 ± 10
POTTING
COMPOUND
DY10
24
DY9
23
DY8
22
DY7
21
DY6
20
DY5
19
DY4
7
DY3
6
DY2
5
DY1
4
R14
R11
C3
R13
R10
C2
R12
R9
C1
R8
R7
R6
R1 to R3 : 330 kΩ
R4 to R11 : 220 kΩ
R12 to R14 : 51 Ω
R15 : 1 MΩ
C1 to C3 : 10 nF
R5
POTTING
COMPUND
P2
P3
R4
-HV
SHIELD CABLE
(RED)
R3
R2
GUIDE MARK
P1
K
P4
P1 to P4 : SIGNAL OUTPUT
COAXIAL CABLE (GRAY)
R15
R1
1
* The housing is internally connected to the GND.
** High voltage shielded cable can be connected to
a connector for RG-174/U.
-HV
SHIELD CABLE (RED)
* For a stable operation, all of anodes should
be connected to ground potential through
load resistors such as 100 k ohm or so,
even if they are not used.
POWER SUPPLY GND
TACCA0162ED
WARNING ~ High Voltage ~
The product is operated at high voltage potential. Further, the metal housing of the product is connected to the photocathode
(potential) so that it becomes a high voltage potential when the product is operated at a negative high voltage (anode grounded).
Accordingly, extreme safety care must be taken for the electrical shock hazard to the operator or the damage to the other instruments.
* PATENT: USA: 5410211 and other(9), GBR: 551767 and other(9), DEU: 69209809 and other(9), FRA: 551767 and other(9), JPN: 3078905 and other(9)
WEB SITE www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected]
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected]
TPMH1318E02
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected]
JUL. 2010 IP
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