photomultiplier tubes r7600u series

PHOTOMULTIPLIER TUBES
R7600U SERIES
High Speed Response, 30 mm Square, Bialkali and Multialkali Photocathode
Metal Channel Dynode 10-stage, Head-on Type
FEATURES
● Effective Area: 18 mm × 18 mm
● High Cathode Sensitivity
Luminous 200 µA/lm Typ. (-01 Type)
Luminous 500 µA/lm Typ. (-20 Type)
● High Speed Response
● Wide Dynamic Range
● Compact
● Weight: Approx. 33 g
APPLICATIONS
●High Energy Physics
●Flow Cytometer (-01, -20 Type)
●DNA Sequencer (-01, -20 Type)
●Pollution Monitoring (NOx) (-01, -20 Type)
Figure 1: Typical Spectral Response
TPMHB0806EA
1000
R7600U-200
100
R7600U-100
10
R7600U
R7600P
R7600U-03
1
0.1
CATHODE RADIANT SENSITIVITY
QUANTUM EFFICIENCY
0.01
100 200 300 400 500 600 700
WAVELENGTH (nm)
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
1000
100
TPMHB0742EC
R7600U-04
10
R7600U-01
R7600U-20
1
0.1
CATHODE RADIANT SENSITIVITY
QUANTUM EFFICIENCY
800 900 1000
0.01
100 200 300 400 500 600 700
800 900 1000
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBES R7600U SERIES
Spectral Response
A
B
C
Maximum Ratings
Supply Average
Dynode Voltage Anode
PhotoBetween
Peak
Window
Type No.
Range
Output
Wavelength cathode Material Structure Anode Current
/ Stages and
Material
Cathode in Total
(V)
(mA)
(nm)
(nm)
900
0.1
MC/10
R7600U
BA
K
420
300 to 650
900
0.1
MC/10
R7600U-01 300 to 850
MA
K
400
900
0.1
MC/10
R7600U-03 185 to 650
BA
U
420
900
0.1
MC/10
R7600U-04 185 to 880
MA
U
420
900
0.1
MC/10
R7600U-20 300 to 920
MA
K
530
900
0.1
MC/10
R7600U-100 300 to 650
SBA
K
400
900
0.1
MC/10
R7600U-200 300 to 650
UBA
K
400
900
0.1
MC/10
R7600P
BA
K
420
300 to 650
Cathode Characteristics
Anode to
Luminous
Red/
Blue
Sensitivity White Radiant Cathode
Index Ratio
Supply
(CS 5-58) (R-68)
Voltage
Typ.
Typ.
Min. Typ. Typ.
(µA/lm) (µA/lm)
(mA/W) (V)
80
—
9.5
80
60
800
65
0.2
—
200
150
800
80
—
9.5
80
60
800
65
0.25
—
200
150
800
78
0.4
—
500
350
800
110
—
13.5
105
90
800
130
—
15.5
135
110
800
80
—
9.5
80
60
800
NOTE: A BA: Bialkali, MA: Multialkali, SBA: Super bialkali, UBA: Ultra bialkali
B K: Borosilicate glass, U: UV glass
C MC: Metal channel
Figure 2: Typical Gain
TPMHB0263ED
TPMHB0265EG
107
R7600U
R7600U-03
R7600P
OUTPUT VOLTAGE (20 mV/div)
108
Figure 3: Time Response (Example)
106
104
R7600U-01
R7600U-04
R7600U-20
R7600U-100
R7600U-200
103
SUPPLY VOLTAGE: 800 V
RISE TIME: 1.5 ns
FALL TIME: 2.7 ns
WIDTH: 3.2 ns
RL: 50 Ω
102
101
100
400
TIME (2 ns/div)
600
800
1000
Figure 4: Single Photon Counting (Example)
0.3
TPMHB0776EA
SUPPLY VOLTAGE (V)
COUNTS PER CHANNEL
GAIN
105
TYPE: R7600P
PHOTON + DARK COUNTS: 4934 s-1
DARK COUNTS: 109 s-1
WAVELENGTH OF INCIDENT LIGHT: 400 nm
SUPPLY VOLTAGE: 800 V
0.2
0.1
PHOTON + DARK
DARK
0
0
200
400
600
800
1000
PULSE HEIGHT / CHANNEL NUMBER (ch)
Anode Characteristics
Luminous
Gain
Min. Typ.
(A/lm) (A/lm)
160
40
200
50
160
40
200
50
500
100
105
40
135
50
160
40
Typ.
2.0 × 106
1.0 × 106
2.0 × 106
1.0 × 106
1.0 × 106
1.0 × 106
1.0 × 106
2.0 × 106
Dark Current
(After 30 min) Dark Count
Typ.
(nA)
2
10
2
10
20
2
2
—
Max.
(nA)
20
50
20
50
50
20
20
—
Typ.
Max.
—
—
—
—
—
—
—
100
—
—
—
—
—
—
—
200
Pulse Linearity
Time Response
Operating
Storage
Rise Transit
Ambient
±5
%
TTS
±2
%
Time Time
Temperature
Deviation Deviation Temperature
Typ. Typ. Typ.
(mA)
(°C)
(mA)
(°C)
(ns) (ns) (ns)
1.4
(1.7)
9.6
0.35
(9.7) (0.36)
30
(100)
70
(220)
Type No.
R7600U
R7600U-01
R7600U-03
R7600U-04
-30 to +50 -30 to +50
R7600U-20
R7600U-100
R7600U-200
R7600P
( ): Measured with the special voltage distribution ratio (Tapered Divider) shown below.
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10
P
Normal Divider Type
1.5
1.5
1.5
1
1
1
1
1
1
1
1
Tapered Divider Type
2
2
2
1
1
1
1
1
2
3
2
Supply Voltage: 800 V, K: Cathode, Dy: Dynode, P: Anode
Figure 5: TTS Characteristic (Example)
Figure 6: Effect of Magnetic Fields on Anode Output (Example)
TPMHB0264EC
SUPPLY VOLTAGE: 800 V
FWHM: 0.35 ns
FWTM: 0.72 ns
103
102
101
100
Ebb: -800 V
TPMHB0261EE
100
RELATIVE OUTPUT (%)
RELATIVE COUNTS
104
120
Y-AXIS
80
60
X-AXIS
40
20
TIME (0.5 ns/div)
Z-AXIS
0
-80
-60
-40
-20
0
20
40
60
MAGNETIC FLUX DENSITY (mT)
Z
+
Y
–
+
–
+
X
–
TOP VIEW
Guide Corner (at Rear Side)
80
PHOTOMULTIPLIER TUBES R7600U SERIES
K
IC (Dy10)
IC
Dy1
Dy2
Dy3
Dy4
IC (Dy10)
CUT (K)
Figure 7: Dimensional Outline and Basing Diagram (Unit: mm)
30.0 ± 0.5
25.7 ± 0.5
4.4 ± 0.7
22.0 ± 0.5
0.6 ± 0.4
12.0 ± 0.5
18 MIN.
2.54 PITCH
IC
IC
P
IC
IC
IC
IC
1 2 3 4 5 6 7 8 9
32
10
11
31
30
12
GUIDE
29
13
CORNER
28
14
15
27
16
26
25 24 23 22 21 20 19 18 17
IC
IC
IC
IC
IC
IC
IC
4 MAX.
TOP VIEW
29- 0.45
CUT (K)
Dy10
Dy9
Dy8
Dy7
Dy6
Dy5
IC (Dy10)
CUT (K)
PHOTOCATHODE
EFFECTIVE AREA
INSULATION
COVER
SIDE VIEW
K
: Photocathode
Dy : Dynode
P
: Anode
CUT : Short Pin
IC : Internal Connection
(Don't Use)
Basing Diagram
BOTTOM VIEW
TPMHA0278EI
SOLD SEPARATELY
[ACCESSORIES] (Unit: mm)
● Socket E678-32B
● D Type Socket Assembly E5996
22.86
PMT
30.0 ± 0.5
4.45 2.92
30.0 ± 0.5
DY10
24
DY9
23
DY8
22
DY7
21
DY6
20
DY5
19
DY4
7
DY3
6
DY2
5
DY1
4
R14
R11
C3
R13
R10
C2
R12
R9
C1
R8
15.0 ± 0.5
12.7
20.32
22.86
SIGNAL GND
SIGNAL OUTPUT
RG-174/U (BLACK)
P
HOUSING
(INSULATOR)
0.51
SOCKET
PIN No.
30
PIN No.1
2.54
20.32
R7
POTTING
COMPOUND
1.57
450 ± 10
12.7
R6
R1 to R3 : 330 kΩ
R4 to R11 : 220 kΩ
R12 to R14 : 51 Ω
R15 : 1 MΩ
C1 to C3 : 10 nF
R5
R4
MATERIAL: Glass Epoxy
R3
TACCA0094ED
R2
K
R15
R1
1
* High voltage shielded cable can be
connected to a connector for RG-174/U.
-HV
SHIELD CABLE (RED)
POWER SUPPLY GND
TACCA0234EC
WARNING ~ High Voltage ~
The product is operated at high voltage potential. Further, the metal housing of the product is connected to the photocathode
(potential) so that it becomes a high voltage potential when the product is operated at a negative high voltage (anode grounded).
Accordingly, extreme safety care must be taken for the electrical shock hazard to the operator or the damage to the other instruments.
* PATENT: USA: 5410211 and other(9), GBR: 551767 and other(9), DEU: 69209809 and other(9), FRA: 551767 and other(9), JPN: 3078905 and other(9)
HAMAMATSU PHOTONICS K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected]su.de
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United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: [email protected]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected]
TPMH1317E02
Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected]
DEC. 2010 IP