Data Sheet

SO
T8
83
B
PESD5V0X2UAMB
Ultra low capacitance unidirectional double ESD protection
diode
10 April 2014
Product data sheet
1. General description
Ultra low capacitance unidirectional double ElectroStatic Discharge (ESD) protection
diode in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD)
plastic package designed to protect up to two signal lines from the damage caused by
ESD and other transients.
2. Features and benefits
•
•
•
•
•
Ultra low diode capacitance: Cd = 0.8 pF
Ultra low package height of only 0.37 mm
ESD protection up to 15 kV; IEC61000-4-2
IPPM = 2.5 A; IEC 61643-321 (surge)
AEC-Q101 qualified
3. Applications
•
•
•
•
High-speed data lines
Portable electronics
Communication systems
Computers and peripherals
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Cd
diode capacitance
f = 1 MHz; VR = 0 V
VRWM
reverse standoff
voltage
Min
Typ
Max
Unit
-
0.8
0.95
pF
-
-
5
V
Per diode
[1]
Measured from pin 1 or 2 to 3.
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[1]
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Ultra low capacitance unidirectional double ESD protection diode
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K1
cathode (diode 1)
2
K2
cathode (diode 2)
3
A
common anode
Simplified outline
Graphic symbol
1
3
2
1
3
2
Transparent
top view
brb051
DFN1006B-3 (SOT883B)
6. Ordering information
Table 3.
Ordering information
Type number
PESD5V0X2UAMB
Package
Name
Description
Version
DFN1006B-3
DFN1006B-3: leadless ultra small plastic package; 3 solder
lands; body 1.0 x 0.6 x 0.37 mm
SOT883B
7. Marking
Table 4.
Marking codes
Type number
Marking code
PESD5V0X2UAMB
0100 1111
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig. 1.
DFN1006B-3 (SOT883B) binary marking code description
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Product data sheet
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Ultra low capacitance unidirectional double ESD protection diode
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
IPPM
rated peak pulse current
tp = 8/20 µs
-
2.5
A
Tj
junction temperature
-
150
°C
Tstg
storage temperature
-55
150
°C
Tamb
ambient temperature
-65
150
°C
Per diode
[1][2]
ESD maximum ratings
VESD
electrostatic discharge voltage
IEC 61000-4-2 (contact discharge)
[3][2]
-
15
kV
IEC 61000-4-2 (air discharge)
[3][2]
-
15
kV
machine model
[2]
-
400
V
-
10
kV
MIL-STD-883 (human body model)
[1]
[2]
[3]
According to IEC 61000-4-5 and IEC 61643-321.
Measured from pin 1 or 2 to 3.
Device stressed with ten non-repetitive ESD pulses.
001aaa631
001aaa630
120
IPP
100 %
100 % IPP; 8 µs
IPP
(%)
80
90 %
e- t
50 % IPP; 20 µs
40
10 %
0
Fig. 2.
0
10
20
30
t (µs)
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
PESD5V0X2UAMB
Product data sheet
tr = 0.6 ns to 1 ns
40
t
30 ns
60 ns
Fig. 3.
ESD pulse waveform according to
IEC 61000-4-2
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Ultra low capacitance unidirectional double ESD protection diode
9. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
5
V
Per diode
VRWM
reverse standoff
voltage
IRM
reverse leakage
current
VR = 5 V
[1]
-
1
10
nA
VCL
clamping voltage
IPP = 1 A; tp = 8/20 µs
[2][1]
-
-
13
V
IPP = 2.5 A; tp = 8/20 µs
[2][1]
-
-
14
V
VBR
breakdown voltage
IR = 10 mA
[1]
7.5
8.8
10
V
Cd
diode capacitance
f = 1 MHz; VR = 0 V
[1]
-
0.8
0.95
pF
Rdyn
dynamic resistance
IR = 10 A
[3][1]
-
0.65
-
Ω
[1]
[2]
[3]
Measured from pin 1 or 2 to 3.
According to IEC 61000-4-5 and IEC 61643-321.
Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008.
I
aaa-011254
1.0
Cd
(pF)
0.8
0.6
- VCL - VBR - VRWM
V
- IRM
- IR
0.4
-
0.2
0
0
1
2
3
4
VR (V)
5
- IPP
- IPPM
f = 1 MHz; Tamb = 25 °C
Fig. 4.
+
P-N
Diode capacitance as a function of reverse
voltage; typical values
PESD5V0X2UAMB
Product data sheet
Fig. 5.
V-I characteristics for a unidirectional ESD
protection diode
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Ultra low capacitance unidirectional double ESD protection diode
aaa-011255
30
I
(A)
20
10
0
0
10
20
VCL (V)
30
tp = 100 ns; Transmission Line Pulse (TLP)
Fig. 6.
Dynamic resistance
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Ultra low capacitance unidirectional double ESD protection diode
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
Rd
40 dB
ATTENUATOR
Cs
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2, ed.2
Cs = 150 pF; Rd = 330 Ω
10
2
V
(kV) 8
V
(kV) 0
6
-2
4
-4
2
-6
0
-8
-2
-10
0
10
20
30
40
50
t (ns)
60
-10
-10
70
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
10
20
30
40
50
t (ns)
60
70
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
20
100
VCL
(V)
VCL
(V)
60
-20
20
-60
-20
-10
0
10
30
50
t (ns)
70
-100
-10
10
30
50
t (ns)
70
clamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-011256
Fig. 7.
ESD clamping test setup and waveforms
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10. Test information
10.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
11. Application information
The device is designed for the protection of up to two unidirectional data lines from surge
pulses and ESD damage.
line 1 to be protected
line 1 to be protected
line 2 to be protected
DUT
DUT
GND
bidirectional protection
of one line
Fig. 8.
GND
unidirectional protection
of two lines
006aab252
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1.
2.
3.
4.
5.
Place the device as close to the input terminal or connector as possible.
Minimize the path length between the device and the protected line.
Keep parallel signal paths to a minimum.
Avoid running protected conductors in parallel with unprotected conductors.
Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
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Product data sheet
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Ultra low capacitance unidirectional double ESD protection diode
12. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm
L (2x)
SOT883B
L1
2
b (2x)
3
e
b1
1
e1
A1
A
E
D
0
0.5
Dimensions
Unit
mm
1 mm
scale
A(1)
A1
b
b1
D
E
e
e1
L
L1
max 0.40 0.04 0.20 0.55 0.65 1.05
0.30 0.30
nom 0.37
0.15 0.50 0.60 1.00 0.35 0.65 0.25 0.25
min 0.34
0.12 0.47 0.55 0.95
0.22 0.22
Note
1. Including plating thickness
Outline
version
sot883b_po
References
IEC
JEDEC
JEITA
Issue date
11-11-02
12-01-03
SOT883B
Fig. 9.
European
projection
Package outline DFN1006B-3 (SOT883B)
PESD5V0X2UAMB
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Ultra low capacitance unidirectional double ESD protection diode
13. Soldering
Footprint information for reflow soldering
SOT883B
1.3
0.7
R0.05 (8x)
0.9
0.6
0.7
0.25
(2x)
0.3
(2x)
0.3
0.4
(2x)
0.4
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot883b_fr
Fig. 10. Reflow soldering footprint for DFN1006B-3 (SOT883B)
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14. Revision history
Table 7.
Revision history
Data sheet ID
Release date
PESD5V0X2UAMB v.1 20140410
PESD5V0X2UAMB
Product data sheet
Data sheet status
Change notice
Supersedes
Product data sheet
-
-
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PESD5V0X2UAMB
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Ultra low capacitance unidirectional double ESD protection diode
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
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limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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Please consult the most recently issued document before initiating or
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Short data sheet — A short data sheet is an extract from a full data sheet
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shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
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or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PESD5V0X2UAMB
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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representation or warranty that such applications will be suitable for the
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customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, ICODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight,
MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug,
TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
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16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Characteristics ....................................................... 4
10
10.1
Test information ..................................................... 7
Quality information ............................................... 7
11
Application information .........................................7
12
Package outline ..................................................... 8
13
Soldering ................................................................ 9
14
Revision history ................................................... 10
15
15.1
15.2
15.3
15.4
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 10 April 2014
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