TSOP32S40F, TSOP34S40F Datasheet

TSOP32S40F, TSOP34S40F
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Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
FEATURES
• Very low supply current
• Photo detector and preamplifier in one package
• Optimized for Sony 12, 15, and 20 bit IR-code
• Internal filter for PCM frequency
• Improved shielding against EMI
• Supply voltage: 2.5 V to 5.5 V
1
• Improved immunity against ambient light
2
3
• Insensitive to supply voltage ripple and noise
16672
• Very narrow optical filter to minimize the interference from
3D synchronizing signals and other optical noise sources
MECHNICAL DATA
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Pinning for TSOP34S40F:
1 = OUT, 2 = GND, 3 = VS
DESCRIPTION
Pinning for TSOP32S40F:
The TSOP32S40F, TSOP34S40F series are miniaturized IR
receiver modules for infrared remote control systems. A PIN
diode and a preamplifier are assembled on lead frame, the
epoxy package contains an IR filter.
1 = OUT, 2 = VS, 3 = GND
The demodulated output signal can be directly decoded by
a microprocessor. The TSOP32S40F, TSOP34S40F are
compatible with 12, 15, and 20 bit Sony codes. They are
optimized to suppress almost all spurious pulses from
energy saving fluorescent lamps but will also suppress
some data signals.
These components have not been qualified according to
automotive specifications.
PARTS TABLE
AGC
SONY (AGC-S)
Carrier frequency
TSOP34S40F (1)
40 kHz
TSOP32S40F (1)
Package
Mold
Pinning
1 = OUT, 2 = GND, 3 = VS
Dimensions (mm)
1 = OUT, 2 = VS, 3 = GND
6.0 W x 6.95 H x 5.6 D
Mounting
Leaded
(1)
Best remote control code
BLOCK DIAGRAM
Sony 12, 15, and 20 bit IR-codes
APPLICATION CIRCUIT
17170_5
16833-13
Transmitter
with
TSALxxxx
3
1
Input
AGC
Band
pass
Demodulator
Rev. 1.0, 06-Jun-14
+ VS
C1
µC
OUT
GND
2
PIN
VS
Circuit
30 kΩ
R1
IR receiver
VO
GND
R1 and C1 are recommended for protection against EOS.
Components should be in the range of 33 Ω < R1 < 1 kΩ,
C1 > 0.1 µF.
Control circuit
1
Document Number: 82669
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TSOP32S40F, TSOP34S40F
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
VS
-0.3 to +6
V
mA
Supply voltage
Supply current
IS
3
Output voltage
VO
-0.3 to (VS + 0.3)
V
Output current
IO
5
mA
Junction temperature
Storage temperature range
Operating temperature range
100
°C
-25 to +85
°C
Tamb
-25 to +85
°C
Tamb  85 °C
Ptot
10
mW
t  10 s, 1 mm from case
Tsd
260
°C
Power consumption
Soldering temperature
Tj
Tstg
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability.
ELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Supply current
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
Ev = 0, VS = 3.3 V
ISD
0.27
0.35
0.45
Ev = 40 klx, sunlight
ISH
Supply voltage
0.45
VS
d
Output voltage low
IOSL = 0.5 mA, Ee = 0.7 mW/m2,
test signal see fig. 1
VOSL
Minimum irradiance
Pulse width tolerance:
tpi - 5/f0 < tpo < tpi + 6/f0,
test signal see fig. 1
Ee min.
Maximum irradiance
tpi - 5/f0 < tpo < tpi + 6/f0,
test signal see fig. 1
Ee max.
Directivity
Angle of half transmission
distance
1/2
mA
mA
2.5
Ev = 0, test signal see fig. 1,
IR diode TSAL6200,
IF = 150 mA
Transmission distance
UNIT
5.5
V
45
m
0.08
100
mV
0.15
mW/m2
W/m2
30
± 45
deg
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1
Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, t = 10 ms)
tpo - Output Pulse Width (ms)
Ee
t
tpi *
T
10/f0 is recommended for optimal function
* tpi
VO
Output Signal
1)
2)
VOH
16110
7/f0 < td < 15/f0
tpi - 5/f0 < tpo < tpi + 6/f 0
Output Pulse Width
0.9
0.8
Input Burst Length
0.7
0.6
0.5
0.4
0.3
λ = 950 nm,
Optical Test Signal, Fig. 1
0.2
0.1
0
VOL
td
1)
tpo
2)
0.1
t
20743
Fig. 1 - Output Active Low
Rev. 1.0, 06-Jun-14
1
10
100
1000
10 000
Ee - Irradiance (mW/m²)
Fig. 2 - Pulse Length and Sensitivity in Dark Ambient
2
Document Number: 82669
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSOP32S40F, TSOP34S40F
www.vishay.com
Optical Test Signal
600 µs
Ee min. - Threshold Irradiance (mW/m²)
Ee
Vishay Semiconductors
t
600 µs
t = 60 ms
94 8134
Output Signal, (see fig. 4)
VO
VOH
VOL
t off
t on
4
Correlation with Ambient Light Sources:
3.5 10 W/m² = 1.4 klx (Std. illum. A, T = 2855 K)
10 W/m² = 8.2 klx (Daylight, T = 5900 K)
3
Wavelength of Ambient
Illumination: λ = 950 nm
2.5
2
1.5
1
0.5
0
0.01
t
20745
Ton, Toff - Output Pulse Width (ms)
0.8
Ton
0.7
0.6
0.5
Toff
0.4
0.3
0.2
λ = 950 nm,
Optical Test Signal, Fig. 3
0.1
0
0.1
20744
1
10
100
1
10
100
Fig. 6 - Sensitivity in Bright Ambient
Ee min. - Threshold Irradiance (mW/m2)
Fig. 3 - Output Function
0.1
Ee - Ambient DC Irradiance (W/m²)
1000
10 000
Ee - Irradiance (mW/m²)
3.0
2.5
2.0
f = f0
f = 30 kHz
f = 10 kHz
f = 100 Hz
1.5
1.0
0.5
0
1
10
100
1000
ΔVS RMS - AC Voltage on DC Supply Voltage (mV)
Fig. 4 - Output Pulse Diagram
Fig. 7 - Sensitivity vs. Supply Voltage Disturbances
1.2
1.0
Max. Envelope Duty Cycle
E e min./Ee - Rel. Responsivity
0.9
1.0
0.8
0.6
0.4
f = f0 ± 5 %
Δ f(3 dB) = f0/10
0.2
0.8
0.7
TSOP32S40F
TSOP34S40F
f = 38 kHz,
Ee = 2 mW/m²
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
0.7
16925
0.9
1.1
0
1.3
f/f0 - Relative Frequency
Fig. 5 - Frequency Dependence of Responsivity
Rev. 1.0, 06-Jun-14
25
50
75
100
125
150
Burst Length (number of cycles/burst)
Fig. 8 - Max. Envelope Duty Cycle vs. Burst Length
3
Document Number: 82669
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSOP32S40F, TSOP34S40F
Ee min. - Threshold Irradiance (mW/m2)
www.vishay.com
Vishay Semiconductors
0°
0.20
20°
30°
0.18
0.16
0.14
40°
0.12
1.0
0.10
0.9
50°
0.8
60°
0.08
0.06
70°
0.04
0.7
0.02
80°
0
-30
-10
10
30
50
70
90
0.6
Tamb - Ambient Temperature (°C)
0.18
Ee min. - Sensitivity (mW/m2)
0.20
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
21769
0
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
850
950
1050
1
1150
λ- Wavelength (nm)
2
3
4
5
VS - Supply Voltage (V)
Fig. 10 - Relative Spectral Sensitivity vs. Wavelength
Rev. 1.0, 06-Jun-14
0.2
Fig. 11 - Horizontal Directivity
1.0
0
750
0.4
drel - Relative Transmission Distance
96 12223p2
Fig. 9 - Sensitivity vs. Ambient Temperature
S (λ)rel - Relative Spectral Sensitivity
10°
Fig. 12 - Sensitivity vs. Supply Voltage
4
Document Number: 82669
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSOP32S40F, TSOP34S40F
www.vishay.com
Vishay Semiconductors
SUITABLE DATA FORMAT
IR Signal
The TSOP32S40F, TSOP34S40F parts are designed to
suppress spurious output pulses due to noise or
disturbance signals. Data and disturbance signals can be
distinguished by the devices according to carrier frequency,
burst length and envelope duty cycle. The data signal
should be close to the band-pass center frequency (40 kHz)
and fulfill the conditions in the table below.
When a data signal is applied to the TSOP32S40F,
TSOP34S40F in the presence of a disturbance signal, the
sensitivity of the receiver is reduced to insure that no
spurious pulses are present at the output. Some examples
of disturbance signals which are suppressed are:
0
• DC light (e.g. from tungsten bulb or sunlight)
10
5
15
20
Time (ms)
16920
• Continuous signals at any frequency
• Strongly or weakly modulated noise from fluorescent
lamps with electronic ballasts (see figure 13 or figure 14).
Fig. 13 - IR Disturbance from Fluorescent Lamp
with Low Modulation
IR Signal

0
16921
5
10
15
20
Time (ms)
Fig. 14 - IR Disturbance from Fluorescent Lamp
with High Modulation
TSOP32S40F, TSOP34S40F
Minimum burst length
10 cycles/burst
After each burst of length
a minimum gap time is required of
10 to 70 cycles
 10 cycles
For bursts greater than
a minimum gap time in the data stream is needed of
70 cycles
> 10 x burst length
Maximum number of continuous short bursts/second
1800
Suppression of interference from fluorescent lamps
Rev. 1.0, 06-Jun-14
Most common disturbance patterns are suppressed
5
Document Number: 82669
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSOP32S40F, TSOP34S40F
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
3.9
1
1
30.5 ± 0.5
(5.55)
8.25
6.95
5.3
6
0.85 max.
0.89
0.5 max.
2.54 nom.
1.3
0.7 max.
4.1
2.54 nom.
5.6
marking area
Not indicated tolerances ± 0.2
technical drawings
according to DIN
specifications
R 2.5
Drawing-No.: 6.550-5169.01-4
Issue: 9; 03.11.10
13655
Rev. 1.0, 06-Jun-14
6
Document Number: 82669
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000