点击下载

HV55G30
55mA 30kV 100nS-High Voltage Power Diodes
High reliability resin molded type high voltage diode
in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Outline Drawings :
VV
Features
VV
High speed switching
Epoxy resin molded in vacuum,
Have anticorrosion in the surface
High surge resisitivity for CRT discharge
High reliability design
Avalanche characteristic
Applications
X light Power supply
Laser
DO-312 Series
Voltage doubler circuit
Lead Diameter 0.6mm
Microwave emission power
General purpose high voltage rectifier,
Voltage multiplier assembly.
3.0mm
12mm
27mm
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Symbols
Items
Repetitive Peak Renerse Voltage
V RRM
IO
Average Output Current
I FSM
Suege Current
Condition
HV55G30
Units
Ta=25°C, I R =0.1mA
30
kV
Ta=25°C,Resistive Load
55
mA
Ta=25°C,8.3msec, half sine
3.0
A peak
Junction Temperature
Tj
125
°C
Allowable Operation Case Temperature
Tc
125
°C
Storage Temperature
Tstg
-40 to +125
°C
HV55G30
Units
48
V
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
at: I F
Maximum Forward Voltage Drop
VF
at 25°C,
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
1.0
uA
IR2
at 100°C,V R =VRRM
10
uA
Maximum Reverse Recovery Time
Trr
at 25°C; I F =0.5I R; I R =I F (AV);
100
nS
Junction Capacitance
Cj
at 25°C; V R=0V,f=1MHz
0.8
pF
GETE ELECTRONIC CO.,LTD
GUANGZHOU * CHINA
n
E-mail: [email protected]
4001 83 84 85
China Tel:
n
Irr =0.25I R
Tel: 0086-20-8184 9628
Fax: 0086-20-8184 9638
n
www.getedz.com
www.hvgtsemi.com
01