2CL30KV/1A 1.0A 30kV --HIGH VOLTAGE SILICON STACK High reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Outline Drawings : (Unit:mm) Features 2C L30 High speed switching Epoxy resin molded in vacuum, Have anticorrosion in the surface High surge resisitivity for CRT discharge KV /1A High reliability design Avalanche characteristic Applications X light Power supply HVC-122520 Series Laser Screw Holes M5 Voltage doubler circuit Microwave emission power General purpose high voltage rectifier, Voltage multiplier assembly. XXXXXXXX 20.0 M5 HVGT Maximum Ratings and Characteristics 120.0 25.0 (max) (max) Absolute Maximum Ratings Symbols Items Repetitive Peak Renerse Voltage V RRM IO Average Output Current I FSM Suege Current Condition 2CL30KV/1A Units Ta=25°C, I R =1.0uA 30 kV Ta=25°C,Resistive Load 1.0 A peak Ta=25°C,8.3 ms 30 A peak Junction Temperature Tj 125 °C Allowable Operation Case Temperature Tc 125 °C Storage Temperature Tstg -40 to +125 °C 2CL30KV/1A Units Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions Maximum Forward Voltage Drop VF at 25°C,IF =IF(AV) 36 V Maximum Reverse Current IR1 at 25°C,VR =VRRM 5.0 uA IR2 at 100°C,V R =VRRM 50 uA Maximum Reverse Recovery Time Trr at 25°C; -- nS Junction Capacitance Cj at 25°C; V R=0V,f=1MHz -- pF GETE ELECTRONIC CO.,LTD GUANGZHOU * CHINA n E-mail: [email protected] 4001 83 84 85 China Tel: n Tel: 0086-20-8184 9628 Fax: 0086-20-8184 9638 n www.getedz.com www.hvgtsemi.com 01