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2CLG30KV/3A
3.0A 30kV --HIGH VOLTAGE SILICON STACK
High reliability resin molded type high voltage diode
in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Outline Drawings : (Unit:mm)
Features
2C
LG
High speed switching
Epoxy resin molded in vacuum,
Have anticorrosion in the surface
High surge resisitivity for CRT discharge
30K
V/3
A
High reliability design
Avalanche characteristic
Applications
X light Power supply
HVC-152520 Series
Laser
Screw Holes
M5
Voltage doubler circuit
Microwave emission power
General purpose high voltage rectifier,
Voltage multiplier assembly.
XXXXXXXX
20.0
M5
HVGT
Maximum Ratings and Characteristics
150.0
25.0
(max)
(max)
Absolute Maximum Ratings
Symbols
Items
Repetitive Peak Renerse Voltage
V RRM
IO
Average Output Current
I FSM
Suege Current
Condition
2CLG30KV/3A
Units
Ta=25°C, I R =1.0uA
30
kV
Ta=25°C,Resistive Load
3.0
A peak
Ta=25°C,8.3 ms
60
A peak
Junction Temperature
Tj
125
°C
Allowable Operation Case Temperature
Tc
125
°C
Storage Temperature
Tstg
-40 to +125
°C
2CLG30KV/3A
Units
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF
at 25°C,IF =IF(AV)
36
V
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
5.0
uA
IR2
at 100°C,V R =VRRM
50
uA
Maximum Reverse Recovery Time
Trr
at 25°C;
100
nS
Junction Capacitance
Cj
at 25°C; V R=0V,f=1MHz
--
pF
GETE ELECTRONIC CO.,LTD
GUANGZHOU * CHINA
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E-mail: [email protected]
4001 83 84 85
China Tel:
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Tel: 0086-20-8184 9628
Fax: 0086-20-8184 9638
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www.getedz.com
www.hvgtsemi.com
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