DN1154

DN1154
Use of DGD2106 in IR2106 Applications
Introduction
The DGD2106 is a high-side/low-side gate driver IC capable of driving 600V MOSFET/IGBTs and has been designed
to be a pin for pin, functionally compatible, drop in replacement to the IRS2106. However, for applications using the
older IR2106 there may need to be a small change of BOM to best match the gate driver response.
Differences between the DGD2106 and the IR2106
From the application perspective, the most significant differences in the specifications are rise/fall times and output
current capability.
Symbol
Definition
IO+
IO-
Output high short circuit pulse current
Output low short circuit pulse current
tr
tf
Turn-on rise time
Turn-off fall time
Min
130
270
DGD2106
Typ
290
600
100
35
Max
Min
120
250
220
80
IR2106
Typ
200
350
150
50
Max
Units
mA
mA
220
80
ns
ns
Table 1: Specification Differences Between the DGD2106 and the IR2106
The DGD2106, being a faster gate driver IC than the IR2106, will turn-on and turn-off the MOSFET/IGBT more quickly.
In some applications, this will translate to a more efficient system because of less switching losses. But in some driver
circuits, the faster dV/dt and dI/dt could cause more overshoot, and potentially greater –VS undershoot, possibly
causing a circuit to not function properly. Hence to use the DGD2106 in an IR2106 application with the aim of having a
similar gate drive as the IR2106, the gate resistor would need to be increased to slow down the drive signal.
Matching the Rise/Fall Time
A typical gate driver half-bridge circuit can be seen in Figure 1. Often for the HO and LO gate drive a gate resistor is
used (RGH and RGL). To increase rise/fall time, RGH and RGL are increased.
Figure 1: DGD2106 in a typical half-bridge circuit
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To best match the DGD2106 in an IR2106 application, match the rise/fall time of the DGD2106 with that of the
IR2106 in that application. To show an example, using the circuit similar to Figure 1 except instead of the
MOSFETs as load to the gate drive signal, a load capacitor (CL = 1000pF) was used.
Figure 2: IR2106 with RGL = 3Ω, tr = 86ns
Figure 3: DGD2106 with RGL = 3Ω, tr = 68ns
Figure 4: DGD2106 with RGL = 100Ω, tr = 86ns
Hence, by making the gate resistors (RGH and RGL) larger you will have similar rise and fall times and will decrease
the chances of any unwanted effects due to the higher dV/dt and dI/dt. In another driver circuit the value may be
greater or less than 100 Ω, depending on initial gate resistor value and MOSFET gate capacitance.
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