CMT14N50

CMT14N50
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination ‹
Robust High Voltage Termination
scheme to provide enhanced voltage-blocking capability ‹
Avalanche Energy Specified
without degrading performance over time. In addition, this ‹
Source-to-Drain Diode Recovery Time Comparable to a
advanced MOSFET is designed to withstand high energy in
Discrete Fast Recovery Diode
avalanche and commutation modes. The new energy ‹
Diode is Characterized for Use in Bridge Circuits
efficient design also offers a drain-to-source diode with a ‹
IDSS and VDS(on) Specified at Elevated Temperature
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited
for
bridge
circuits
where
diode
speed
and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
SYMBOL
D
SOURCE
DRAIN
GATE
TO-220FP
Top View
G
S
N-Channel MOSFET
1
2
3
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current - Continuous
- Pulsed
Gate-to-Source Voltage - Continue
- Non-repetitive
Total Power Dissipation
Symbol
Value
Unit
A
ID
14
IDM
56
VGS
±30
V
VGSM
±40
V
PD
Derate above 25℃
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy - TJ = 25℃
35
W
0.28
W/℃
TJ, TSTG
-55 to 150
℃
EAS
588
mJ
θJC
3.6
℃/W
θJA
62.5
TL
260
(VDD = 100V, VGS = 10V, IL = 14A, L = 6mH, RG = 25Ω)
Thermal Resistance - Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
2009/07/17 Rev1.2
Champion Microelectronic Corporation
℃
Page 1
CMT14N50
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
CMT14N50GN220FP*
Package
TO-220 Full Package
*Note: G : Suffix for PB Free Product
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS = 500 V, VGS = 0 V)
(VDS = 400 V, VGS = 0 V, TJ = 125℃)
Gate-Source Leakage Current-Forward
(Vgsf = 30 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = -30 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 7A) *
Drain-Source On-Voltage (VGS = 10 V)
(ID = 7 A)
Forward Transconductance (VDS = 50 V, ID = 8.4A) *
Input Capacitance
(VDS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz)
Reverse Transfer Capacitance
Turn-On Delay Time
(VDD = 250 V, ID = 7 A,
Rise Time
RD = 17Ω,
Turn-Off Delay Time
RG = 6.2Ω) *
Fall Time
Total Gate Charge
(VDS = 400 V, ID = 7 A,
Gate-Source Charge
VGS = 10 V)*
Gate-Drain Charge
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond
pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
(IS =7 A, VGS = 0 V,
Forward Turn-On Time
dIS/dt = 100A/μs)
Reverse Recovery Time
Symbol
V(BR)DSS
Min
500
CMT14N50
Typ
Max
Units
V
μA
IDSS
IGSSF
1
3
100
nA
IGSSR
100
nA
4.0
V
0.34
7.5
Ω
V
VGS(th)
2.0
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
9.3
mhos
pF
pF
pF
2038
307
10
15
36
35
29
ns
ns
ns
ns
64
16
26
nC
nC
nC
5.0
nH
LS
13
nH
VSD
ton
trr
**
487
1.5
731
V
ns
ns
* Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
2009/07/17 Rev1.2
Champion Microelectronic Corporation
Page 2
CMT14N50
POWER FIELD EFFECT TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
2009/07/17 Rev1.2
Champion Microelectronic Corporation
Page 3
CMT14N50
POWER FIELD EFFECT TRANSISTOR
2009/07/17 Rev1.2
Champion Microelectronic Corporation
Page 4
CMT14N50
POWER FIELD EFFECT TRANSISTOR
2009/07/17 Rev1.2
Champion Microelectronic Corporation
Page 5
CMT14N50
POWER FIELD EFFECT TRANSISTOR
2009/07/17 Rev1.2
Champion Microelectronic Corporation
Page 6
CMT14N50
POWER FIELD EFFECT TRANSISTOR
PACKAGE DIMENSION
TO-220FP
2009/07/17 Rev1.2
Champion Microelectronic Corporation
Page 7
CMT14N50
POWER FIELD EFFECT TRANSISTOR
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F-1, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
21F., No. 96, Sec. 1, Sintai 5th Rd., Sijhih City,
Taipei County 22102,
Taiwan, R.O.C.
T E L : +886-2-2696 3558
F A X : +886-2-2696 3559
2009/07/17 Rev1.2
Champion Microelectronic Corporation
Page 8
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