TA 33 www.vishay.com Vishay Sfernice Wirebondable Dual Value Thin Film Chip Resistor Networks, Center Tap FEATURES • Center tap feature • Resistor material: Self-passivating Tantalum nitride • Silicon substrate for good power dissipation • Wirebondable Actual Size These tantalum chips combine excellent stability 0.07 % (2000 h, rated power at + 70 °C) with great power handling capacity. Two bonding pads per termination allow greater flexibility in hybrid layout design. • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 SCHEMATIC RT R1 R2 RT = R1 + R2 with R1 = R2 Standard STANDARD ELECTRICAL SPECIFICATIONS MODEL SIZE RESISTANCE RANGE (1) POWER RATING P70 °C W ABSOLUTE TOLERANCE ±% RATIO TOLERANCE ±% ABSOLUTE TCR (2) ± ppm/°C RATIO TCR ± ppm/°C TA 33 0303 50 to 1M 0.125 0.5, 1, 2 0.1, 0.5 50, 100 5 Notes (1) (R = R + R ) T 1 2 (2) ± 100 ppm/°C, ± 50 ppm/°C on request at - 55 °C to + 155 °C PERFORMANCES TEST SPECIFICATIONS Ohmic value: Ratio Stability ± 0.07 % typical, ± 0.1 maximum Limiting voltage < - 35 dB typical Thermal EMF MIL-STD-202 method 308 0.01 μV/°C 100 ppm CLIMATIC SPECIFICATIONS - 55 °C to + 155 °C - 55 °C to + 155 °C 1 year at + 25 °C DERATING Rated Power in % Shelf life stability Storage temperature range 2000 h at + 70 °C under Pn 50 VDC on RT Noise Operating temperature range CONDITIONS 1/1 standard (unequal values: please consult) 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Ambient Temperature in °C Revision: 17-Aug-12 Document Number: 60066 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TA 33 www.vishay.com Vishay Sfernice DIMENSIONS DIMENSION B Bonding Pad Area D A INCHES MILLIMETERS A 0.033 ± 0.004 0.855 ± 0.10 B 0.033 ± 0.004 0.855 ± 0.10 C 0.01 to 0.015 0.25 to 0.40 D 0.006 0.15 E 0.004 0.10 F 0.006 0.15 E C F MECHANICAL SPECIFICATIONS Resistive element Tantalum nitride Substrate material Silicon Passivation Selfpassivation Bonding pads Aluminum, gold on request GLOBAL PART NUMBER INFORMATION New Global Part Numbering: TA33-5K2F25KD0099 (preferred part number format) T A GLOBAL MODEL Revision: 17-Aug-12 3 3 - 5 K 2 F 2 5 K D 0 0 9 9 R1 VALUE ABS. TOLERANCE R2 VALUE RAT. TOLERANCE OPTION Decimal R, K, or M D = ± 0.5 % F = ± 1.0 % G = ± 2.0 % Decimal R, K, or M B = ± 0.1 % D = ± 0.5 % Leave blank if no option Document Number: 60066 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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