IL256AT Datasheet

IL256AT
Vishay Semiconductors
Optocoupler, Phototransistor Output,
AC Input, with Base Connection
FEATURES
A/C
1
8 NC
C/A
2
7 B
NC
3
6 C
NC
4
5 E
i179025
DESCRIPTION
The IL256AT is an AC input phototransistor optocoupler. The
device consists of two infrared emitters connected in reverse
parallel and coupled to a silicon NPN phototransistor
detector.
These circuit elements are constructed with a standard
SOIC-8 foot print.
The product is well suited for telecom applications such as
ring detection or off/on hook status, given its bidirectional
LED input and guaranteed current transfer ratio (CTR)
minimum of 20 % at IF = 10 mA.
• Guaranteed CTR symmetry, 2:1 maximum
• Bidirectional AC input industry standard
SOIC-8 Surface mountable package
• Isolation test voltage, 4000 VRMS
• Standard lead spacing, 0.05"
• Available only on tape and reel (conform to EIA
standard RS481A)
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
APPLICATIONS
• Telecom applications ring detection
AGENCY APPROVALS
• UL1577, file no. E52744 system code Y
• CUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-2 (VDE 0884) available with option 1
ORDER INFORMATION
PART
REMARKS
IL256AT
CTR > 20 %, tape and reel, SOIC-8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
IF
60
mA
Pdiss
90
mW
0.8
mW/°C
INPUT
Forward continuous current
Power dissipation
Derate linearly from 25 °C
OUTPUT
Collector-emitter breakdown voltage
BVCEO
30
V
Emitter-collector breakdown voltage
BVECO
5
V
Collector-base breakdown voltage
BVCBO
70
V
Pdiss
150
mW
2.0
mW/°C
Power dissipation
Derate linearly from 25 °C
COUPLER
Isolation voltage, input to output
VISO
4000
VRMS
Total package dissipation
(LED and detector)
Ptot
240
mW
3.2
mW/°C
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
10
s
Derate linearly from 25 °C
Soldering time at 260 °C
Note
Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
Document Number: 83620
Rev. 1.8, 08-Jan-08
For technical questions, contact: [email protected]
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1
IL256AT
Vishay Semiconductors Optocoupler, Phototransistor Output,
AC Input, with Base Connection
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
IF = ± 10 mA
VF
MIN.
TYP.
MAX.
UNIT
1.2
1.5
V
INPUT
Forward voltage
OUTPUT
Collector emitter breakdown voltage
IC = 1.0 mA
BVCEO
30
50
V
Emitter collector breakdown voltage
IE = 100 µA
BVECO
5
10
V
Collector base breakdown voltage
IC = 100 µA
BVCBO
70
90
Collector emitter leakage current
VCE = 10 V
ICEO
IF = 16 mA, IC = 2 mA
VCEsat
V
5
50
nA
0.4
V
COUPLER
Saturation voltage, collector emitter
Note
Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the
device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
DC current transfer ratio
TEST CONDITION
SYMBOL
MIN.
IF = 10 mA, VCE = 5 V
CTRDC
20
Symmetry
(CTR at + 10 mA)/(CTR at -10 mA)
0.5
TYP.
MAX.
UNIT
%
1
2
TYP.
MAX.
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Climatic classification
(according to IEC 68 part 1)
UNIT
55/100/21
Comparative tracking index
CTI
175
VIOTM
6000
VIORM
560
399
V
V
PSO
350
mW
ISI
150
mA
TSI
165
Creepage distance
Clearance distance
Insulation thickness, reinforced rated
per IEC 60950 2.10.5.1
°C
4
mm
4
mm
0.2
mm
Note
As per IEC 60747-5-2, §7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the
safety ratings shall be ensured by means of prodective circuits.
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2
For technical questions, contact: [email protected]
Document Number: 83620
Rev. 1.8, 08-Jan-08
IL256AT
Optocoupler, Phototransistor Output, Vishay Semiconductors
AC Input, with Base Connection
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
2.0
40
85 °C
25 °C
0
- 55 °C
- 20
1.0
0.5
- 40
- 60
- 1.5 - 1.0
- 0.5
0.0
0.5
1.0
0.0
0.1
1.5
V F - LED Forward Voltage (V)
iil256at_01
iil256at_04
Fig. 1 - LED Forward Current vs.Forward Voltage
0.8
TA = - 55 °C
Normalized CTR
1.2
TA = 25 °C
1.1
1.0
0.9
TA = 100 °C
0.1
1
iil256at_02
0.6
10
iil256at_05
Fig. 2 - Forward Voltage vs. Forward Current
Normalized CTRCB
0.005
0.01
0.02
0.05
0.1
0.2
0.5
100
t
DF = τ/t
100
10 - 1
10 0
10 1
1.0
TA = 25 °C
TA = 50 °C
TA = 70 °C
0.5
0.0
0.1
t - LED Pulse Duration (s)
1
10
100
I F - LED Current (mA)
iil256at_06
Fig. 3 - Peak LED Current vs. Duty Factor, Tau
Document Number: 83620
Rev. 1.8, 08-Jan-08
10
Normalized to:
I F = 10 mA
1000
10 - 3 10 - 2
1
IF - LED Current (mA)
1.5
Duty Factor
10 - 4
Normalized to:
IF = 10 mA, VCE = 10 V
TA = 25 °C
Fig. 5 - Normalized Saturated CTR
τ
10
10 - 6 10 - 5
VCE(sat) = 0.4 V
0.4
0.0
0.1
100
IF - Forward Current (mA)
10000
TA = 25 °C
TA = 50 °C
TA = 70 °C
TA = 100 °C
0.2
0.8
0.7
If(pk) - Peak LED Current (mA)
100
1.0
1.3
iil256at_03
1
10
IF - LED Current (mA)
Fig. 4 - Normalized CTR vs. IF and Tamb
1.4
VF - Forward Voltage (V)
Normalized to:
IF = 10 mA, VCE = 10 V
TA = 25 °C
TA = 25 °C
TA = 50 °C
TA = 70 °C
TA = 100 °C
1.5
20
Normalized CTR
I F - LED Forward Current (mA)
60
Fig. 6 - Normalized CTRcb
For technical questions, contact: [email protected]
www.vishay.com
3
IL256AT
Vishay Semiconductors Optocoupler, Phototransistor Output,
AC Input, with Base Connection
1.5
1000
Normalized Saturated HF
ICB - Photocurrent (µA)
25 °C
100
70 °C
10
1
0.1
Normalized to:
HFE at VCE = 10 V
ICB = 10 µA
1.0
TA
TA
TA
TA
0.5
= - 20 °C
= 25 °C
= 50 °C
= 70 °C
V CE(sat) = 0.4 V
0.0
0.1
1
10
100
1
IF - LED Current (mA)
iil256at_07
10
100
1000
IB - Base Current (µA)
iil256at_10
Fig. 10 - Normalized Saturated hFE vs. Base Current
Fig. 7 - Photocurrent vs. LED Current
700
1000
100
V CE = 0.4 V
100
10
400
300
1
200
100
1
IB
iil256at_08
10
100
- Base Current (µA)
IB - Base Current (µA)
500
IF - LED Current (mA)
HFE - Transistor Gain
600
0.1
1000
10
1
0.1
0.01
0.001
0.4
0.5
Fig. 8 - Base Current vs. IF and hFE
0.7
0.8
Fig. 11 - Base Emitter Voltage vs. Base Current
10 5
1.2
NHFE - 20 °C
NHFE 25 °C
NHFE 50 °C
NHFE 70 °C
0.8
0.6
0.4
1
iil256at_09
10
100
10 3
10 2
V CE = 10 V
10 1
Typical
10 0
10 -1
10 -2
- 20
1000
IB - Base Current (µA)
0
20
40
60
80
100
T A - Ambient Temperature (°C)
iil256at_12
Fig. 9 - Normalized hFE vs. Base Current and Temp.
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4
10 4
ICEO - Collector Emitter (nA)
Normalized to:
IB = 10 µA
VCE = 10
1.0
Normalized HFE
0.6
VBE - Base Emitter Voltage (V)
iil256at_11
Fig. 12 - Collector-Emitter Leakage Current vs.Temp.
For technical questions, contact: [email protected]
Document Number: 83620
Rev. 1.8, 08-Jan-08
IL256AT
Optocoupler, Phototransistor Output, Vishay Semiconductors
AC Input, with Base Connection
PACKAGE DIMENSIONS in inches (millimeters)
0.120 ± 0.002
(3.05 ± 0.05)
R 0.010 (0.13)
0.050 (1.27)
CL
0.240
(6.10)
0.014 (0.36)
0.154 ± 0.002
(3.91 ± 0.05)
0.036 (0.91)
0.170 (4.32)
0.260 (6.6)
0.045 (1.14)
0.016 (0.41)
Pin one I.D.
7°
0.015 ± 0.002
0.230 ± 0.002
40 °
(0.38 ± 0.05)
0.0585 ± 0.002
(1.49 ± 0.05)
(5.84 ± 0.05)
ISO method A
0.004 (0.10)
0.125 ± 0.002
0.008 (0.20)
0.008 (0.20)
5° max.
R0.010
0.050 (1.27) typ.
0.040 (1.02)
0.020 ± 0.004
(0.25) max.
(0.51 ± 0.10)
i178020
Document Number: 83620
Rev. 1.8, 08-Jan-08
(3.18 ± 0.05)
Lead coplanarity
± 0.001 max.
2 plcs.
For technical questions, contact: [email protected]
www.vishay.com
5
IL256AT
Vishay Semiconductors Optocoupler, Phototransistor Output,
AC Input, with Base Connection
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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6
For technical questions, contact: [email protected]
Document Number: 83620
Rev. 1.8, 08-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000