K815P, K825P, K845P www.vishay.com Vishay Semiconductors Optocoupler, Photodarlington Output FEATURES • Endstackable to 2.54 mm (0.1") spacing C C • Low temperature coefficient of CTR • Wide ambient temperature range • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 16 pin 1 • Isolation test voltage 5300 VRMS 4 pin A 8 pin A 1 APPLICATIONS • Programmable logic controllers • Modems • Answering machines • General applications AGENCY APPROVALS • UL1577, file no. E76222 system code C, double protection • CSA 22.2 bulletin 5A, double protection • CQC: GB8898-2001 (K815P only) DESCRIPTION In the K815P, K825P, K845P parts, each channel consist of a photodarlington optically coupled to a gallium arsenide infrared-emitting diode in an 4 pin, 8 pin, and 16 pin plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. ORDERING INFORMATION K 8 # 5 P DIP-4/DIP-8/DIP-16 PART NUMBER 7.62 mm AGENCY CERTIFIED/PACKAGE CTR (%) UL, cUL > 600 DIP-4 (CQC) K815P DIP-8 K825P DIP-16 K845P ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Forward surge current Power dissipation Junction temperature Rev. 2.1, 24-Sep-12 tp ≤ 10 μs IFSM 1.5 A Pdiss 100 mW Tj 125 °C Document Number: 83524 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 K815P, K825P, K845P www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage VCEO 35 V Emitter collector voltage VECO 7 V OUTPUT Collector current tp/T = 0.5, tp ≤ 10 ms Collector peak current Power dissipation Junction temperature IC 80 mA ICM 100 mA Pdiss 150 mW Tj 125 °C COUPLER VISO 5 kV Total power dissipation AC isolation test voltage (RMS) t = 1 min, f = 50 Hz Ptot 250 mW Operating ambient temperature Tamb - 40 to + 100 °C Storage temperature range Tstg - 55 to + 125 °C Soldering temperature (1) Tsld 260 °C Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Forward voltage IF = 20 mA VF Reverse current VR = 6 V IR MIN. TYP. MAX. UNIT 1.2 1.4 V 10 μA INPUT OUTPUT Collector emitter voltage IC = 100 μA VCEO 35 Emitter collector voltage IE = 100 μA VCEO 7 VCE = 10 V, IF = 0 A, E = 0 ICEO 100 nA Collector emitter saturation voltage IC = 5 mA, IF = 20 mA VCEsat 0.1 V Cut-off frequency IF = 10 mA, VCE = 5 V, RL = 100 Ω fc 10 kHz f = 1 MHz Ck 0.3 pF Collector dark current V V COUPLER Coupling capacitance Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION SYMBOL MIN. TYP. IC/IF IF = 1 mA, VCE = 2 V CTR 600 800 MAX. UNIT % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Rise time VCE = 2 V, IC = 10 mA, RL = 100 Ω (see figure 1) tr 300 μs Turn-off time VCE = 2 V, IC = 10 mA, RL = 100 Ω (see figure 1) toff 250 μs Rev. 2.1, 24-Sep-12 MIN. TYP. MAX. UNIT Document Number: 83524 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 K815P, K825P, K845P www.vishay.com Vishay Semiconductors IF IF 0 + V CC IF 0 I C = 10 mA t 100 % 90 % R G = 50 Ω tp = 0.01 T t p = 50 s 10 % 0 Channel I tr Oscilloscope R I = 1 MΩ C I = 20 pF Channel II 50 Ω tp IC RL 14779 td ts t on tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time Fig. 1 - Test Circuit, Non-Saturated Operation tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 2 - Switching Times TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) I F = 10 mA VF - Forward Voltage (V) 1.2 1.1 1.0 0.9 0.8 0 14389 40 60 80 100 Tamb - Ambient Temperature (°C) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 14391 Fig. 5 - Relative Current Transfer Ratio vs. Ambient Temperature I CEO - Collector Dark Current, with Open Base (nA) I F - Forward Current (mA) 1.2 10 000 100 10 1 VCE = 10 V IF = 0 1000 100 10 1 0.4 0.8 1.2 1.6 20 2.0 V F - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage Rev. 2.1, 24-Sep-12 1.3 100 000 1000 14390 VCE = 5 V I F = 1 mA 1.4 20 Fig. 3 - Forward Voltage vs. Ambient Temperature 0.1 0.0 1.5 CTR rel - Relative Current Transfer Ratio 1.3 14392 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 6 - Collector Dark Current vs. Ambient Temperature Document Number: 83524 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 K815P, K825P, K845P www.vishay.com V CEsat - Collector Emitter Saturation Voltage (V) Vishay Semiconductors 1000 IC - Collector Current (mA) VCE = 2 V 100 10 1 0.1 0.1 1 10 100 1.1 CTR = 200 % used 1.0 100 % 0.9 0.8 0.7 0.6 1 10 I F - Forward Current (mA) 14393 Fig. 9 - Collector Emitter Saturation Voltage vs. Collector Current 10 000 100 CTR - Current Transfer Ratio (%) I F = 2 mA I C - Collector Current (mA) 100 I C - Collector Current (mA) 14395 Fig. 7 - Collector Current vs. Forward Current 50 % 25 % 1 mA 10 0.5 mA 0.2 mA 1 0.1 mA 0.1 0.1 1 10 1000 100 10 0.1 100 VCE - Collector Emitter Voltage (V) 14394 VCE = 2 V 1 10 I F - Forward Current (mA) 14396 Fig. 8 - Collector Current vs. Collector Emitter Voltage 100 Fig. 10 - Current Transfer Ratio vs. Forward Current PACKAGE DIMENSIONS in inches (millimeters) SMD 0.76 2.54 R 0.25 1.78 6.48 6.81 1.52 8 min. 11.05 3 PIN 1 IDENTIFICATION 4 9.52 10.03 4.55 4.83 0.76 1.14 7.52 7.90 0.79 typ. 10° ISO method A 3.30 3.81 4° typ. 0.25 typ. 8 min. 0.249 0.102 2.54 typ. 1.27 typ. i178029-2 Rev. 2.1, 24-Sep-12 Lead coplanarity 0.004 max. 0.508 1.020 3° to 7° Document Number: 83524 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 K815P, K825P, K845P www.vishay.com Vishay Semiconductors Pin one ID 4 3 2 1 5 6 7 8 6.645 ± 0.165 ISO method A 9.77 ± 0.14 0.95 ± 0.19 7.62 typ. 0.79 4° typ. 3.555 ± 0.255 6.095 ± 0.255 1.27 10° 3.045 ± 0.255 0.70 ± 0.19 3° to 9° 0.51 ± 0.05 2.54 typ. 0.25 ± 0.05 i178006 Pin one ID 8 7 6 5 4 3 2 1 6.48 6.81 9 10 11 12 13 14 15 16 ISO method A 19.77 20.07 0.76 1.14 0.79 7.62 typ. 3.30 3.81 4° 0.51 0.89 0.46 0.56 2.54 typ. 1.27 10° typ. 3° to 9° i178007 2.79 3.30 5.84 6.35 0.20 0.30 PACKAGE MARKING K825P K845P K815P V YWW H 68 Rev. 2.1, 24-Sep-12 V YWW H 68 V YWW H 68 Document Number: 83524 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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