K814P/ K824P/ K844P Vishay Semiconductors Optocoupler, Phototransistor Output, AC input Features • • • • • • • • Endstackable to 2.54 mm (0.1") spacing DC isolation test voltage VISO = 5000 VRMS Low coupling capacitance of typical 0.3 pF Current Transfer Ratio (CTR) of typical 100 % Low temperature coefficient of CTR Wide ambient temperature range Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC C Agency Approvals A • UL1577, File No. E76222 System Code U, Double Protection • C-UL CSA 22.2, Bulletin 5A Applications 4 PIN E C 8 PIN 16 PIN 17220_1 e3 C Pb Pb-free Feature phones, answering machines, PBX, fax machines The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. Description Order Information The K814P/ K824P/ K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4-pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package. Part K814P Remarks CTR > 20 %, Single Channel, DIP-4 K824P CTR > 20 %, Dual Channel, DIP-8 K844P CTR > 20 %, Quad Channel, DIP-16 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Test condition Forward current Forward surge current Power dissipation Junction temperature Document Number 83523 Rev. 1.8, 26-Oct-04 tp ≤ 10 µs Symbol Value Unit IF ± 60 mA IFSM ± 1.5 A Pdiss 100 mW Tj 125 °C www.vishay.com 1 K814P/ K824P/ K844P Vishay Semiconductors Output Symbol Value Collector emitter voltage Parameter Test condition VCEO 70 V Emitter collector voltage VECO 7 V Collector current Collector peak current IC 50 mA ICM 100 mA Pdiss 150 mW Tj 125 °C tp/T = 0.5, tp ≤ 10 ms Power dissipation Unit Junction temperature Coupler Parameter Test condition AC Isolation test voltage (RMS) t = 1 min Symbol Value Unit 1) 5000 VRMS VISO Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb - 40 to + 100 °C Tstg - 55 to + 125 °C Tsld 260 °C Storage temperature range Soldering temperature 1) 2 mm from case, t ≤ 10 s Related to standard climate 23/50 DIN 50014 Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition Symbol Forward voltage IF = ± 50 mA VF Reverse current VR = ± 6 V IR Min Typ. Max 1.25 1.6 Unit V 10 µA Max Unit Output Symbol Min Collector emitter voltage Parameter IC = 100 µA Test condition VCEO 70 Typ. V Emitter collector voltage IE = 100 µA VECO 7 V Collector dark current VCE = 20 V, IF = 0, E = 0 ICEO 100 nA Max Unit 0.3 V Coupler Parameter Test condition Symbol Min Typ. Collector emitter saturation voltage IF = ± 10 mA, IC = 1 mA VCEsat Cut-off frequency IF = ± 10 mA, VCE = 5 V, RL = 100 Ω fc 100 kHz Coupling capacitance f = 1 MHz Ck 0.3 pF Current Transfer Ratio Parameter IC/IF www.vishay.com 2 Test condition VCE = 5 V, IF = ± 5 mA Part Symbol Min K814P CTR 20 Typ. Max Unit 300 % Document Number 83523 Rev. 1.8, 26-Oct-04 K814P/ K824P/ K844P Vishay Semiconductors Switching Characteristics Test condition Symbol Delay time Parameter VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) td Min Typ. 3.0 Max µs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) tr 3.0 µs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) tf 4.7 µs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) ts 0.3 µs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) ton 6.0 µs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) toff 5.0 µs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 2) ton 9.0 µs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 2) toff 18.0 µs IF 0 +5V IF IF IC = 2 mA; adjusted through input amplitude RG = 50 W tp = 0.01 T tp = 50 Ps Channel I Channel II 50 W 100 W Oscilloscope RL > 1 MW CL < 20 pF Figure 1. Test circuit, non-saturated operation 0 IF = 10 mA IF 96 11698 0 IC tp t 100% 90% 10% 0 tp td tr ton (= td + tr) 13343 Unit tr td ton ts pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) t tf toff storage time fall time turn-off time Figure 3. Switching Times +5V IC RG = 50 W tp = 0.01 T tp = 50 Ps Channel I Channel II 50 W Oscilloscope RL > 1 MW CL < 20 pF 1 kW 13344 Figure 2. Test circuit, saturated operation Document Number 83523 Rev. 1.8, 26-Oct-04 www.vishay.com 3 K814P/ K824P/ K844P Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10000 I CEO - Collector Dark Current, with open Base ( nA ) P tot –Total Power Dissipation ( mW) 300 Coupled device 250 200 Phototransistor 150 IR-diode 100 50 V CE = 20 V IF = 0 1000 100 10 1 0 0 40 80 Tamb – Ambient Temperature( °C ) 96 11700 0 120 25 Figure 4. Total Power Dissipation vs. Ambient Temperature 50 100 75 Tamb - Ambient Temperature ( ° C ) 95 11026 Figure 7. Collector Dark Current vs. Ambient Temperature 100 IC – Collector Current ( mA ) I F - Forward Current ( mA ) 1000 100 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V F - Forward Voltage ( V ) 10 1 0.1 0.01 0.1 0.1 96 11862 V CE=5V 20mA V CE=5V I F=5mA IC – Collector Current ( mA) CTRrel – Relative Current Transfer Ratio 100 1.5 1.0 0.5 0 –25 0 25 50 75 Tamb – Ambient Temperature ( °C ) Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature www.vishay.com 4 Figure 8. Collector Current vs. Forward Current 2.0 95 11025 100 10 I F – Forward Current ( mA ) 95 11027 Figure 5. Forward Current vs. Forward Voltage 1 I F=50mA 10mA 10 5mA 2mA 1 1mA 0.1 0.1 95 10985 1 100 10 V CE – Collector Emitter Voltage ( V ) Figure 9. Collector Current vs. Collector Emitter Voltage Document Number 83523 Rev. 1.8, 26-Oct-04 K814P/ K824P/ K844P 1.0 ton / toff –Turn on / Turn off Time ( µ s ) VCEsat– Collector Emitter Saturation Voltage (V) Vishay Semiconductors 20% 0.8 CTR=50% 0.6 0.4 0.2 10% 8 Non Saturated Operation V S=5V RL=100 Ω ton 6 toff 4 2 0 0 1 100 10 I C – Collector Current ( mA ) 95 11028 0 95 11030 Figure 10. Collector Emitter Saturation Voltage vs. Collector Current CTR – Current Transfer Ratio ( % ) 10 2 4 6 10 I C – Collector Current ( mA ) Figure 13. Turn on / off Time vs. Collector Current 1000 V CE=5V 100 10 1 0.1 1 100 10 I F – Forward Current ( mA ) 95 11029 ton / toff –Turn on / Turn off Time ( µ s ) Figure 11. Current Transfer Ratio vs. Forward Current 50 Saturated Operation V S=5V RL=1k Ω 40 30 toff 20 10 ton 0 0 95 11031 5 10 15 20 I F – Forward Current ( mA ) Figure 12. Turn on / off Time vs. Forward Current Document Number 83523 Rev. 1.8, 26-Oct-04 www.vishay.com 5 K814P/ K824P/ K844P Vishay Semiconductors Package Dimensions in mm 14789 Package Dimensions in mm 14783 www.vishay.com 6 Document Number 83523 Rev. 1.8, 26-Oct-04 K814P/ K824P/ K844P Vishay Semiconductors Package Dimensions in mm 14784 Document Number 83523 Rev. 1.8, 26-Oct-04 www.vishay.com 7 K814P/ K824P/ K844P Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 Document Number 83523 Rev. 1.8, 26-Oct-04 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1