SFH615A-3X018T Datasheet

SFH615A-3X018T
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS
FEATURES
A 1
4
C
• Excellent CTR linearity depending on forward
current
C 2
3
E
• Isolation test voltage, 5300 VRMS
• Fast switching times
• Low CTR degradation
1
17448-5
• Low coupling capacitance
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The SFH615A-3X018T features a variety of transfer ratios,
low coupling capacitance and high isolation voltage. This
coupler has a GaAs infrared diode emitter, which is optically
coupled to a silicon planar phototransistor detector, and is
incorporated in a plastic SMD package.
APPLICATIONS
• Switchmode power supply
• Telecom
• Battery powered equipment
The coupling devices are designed for signal transmission
between two electrically separated circuits.
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-5 (VDE 0884-5) available with option 1
• cUL tested to CSA 22.2 bulletin 5A
• BSI IEC 60950, IEC 60065
• FIMKO EN6005, EN60950-1
ORDERING INFORMATION
S
F
H
6
1
PART NUMBER
AGENCY CERTIFIED/PACKAGE
VDE, UL, cUL, BSI, FIMKO
SMD-4, option 8
Rev. 1.0, 08-Feb-13
5
A
-
3
CTR
BIN
X
0
1
8
PACKAGE OPTION
T
TAPE
AND
REEL
SMD-4
9.27 mm
CTR (%)
10 mA
100 to 200
SFH615A-3X018T
Document Number: 84185
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SFH615A-3X018T
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ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
DC forward current
IF
60
mA
IFSM
2.5
A
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7
V
tp  10 μs
Surge forward current
OUTPUT
IC
50
mA
tp  1 ms
IC
100
mA
t=1s
VISO
5300
VRMS
Creepage distance
7
mm
Clearance distance
7
mm
0.4
mm
Collector current
COUPLER
Isolation test voltage
between emitter and detector
Insulation thickness between emitter and detector
Comparative tracking index per 
DIN IEC112/VDE0303 part 1
Isolation resistance
CTI
175
VIO = 500 V, Tamb = 25 °C
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011

Tstg
- 55 to + 150
°C
Tamb
- 55 to +100
°C
Tsld
260
°C
Storage temperature range
Ambient temperature range
Soldering temperature (1)
max. 10 s

Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD).
Ptot - Power Dissipation (mW)
200
150
Phototransistor
100
50
Diode
0
0
18483
25
50
75
100
125
150
Tamb - Ambient Temperature (°C)
Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature
Rev. 1.0, 08-Feb-13
Document Number: 84185
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SFH615A-3X018T
www.vishay.com
Vishay Semiconductors
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
LED power dissipation
Pdiss
100
mW
Output power dissipation
Pdiss
150
mW
Maximum LED junction temperature
Tjmax.
125
°C
Maximum output die junction temperature
Tjmax.
125
°C
Thermal resistance, junction emitter to board
EB
173
°C/W
Thermal resistance, junction emitter to case
EC
149
°C/W
Thermal resistance, junction detector to board
DB
111
°C/W
Thermal resistance, junction detector to case
DC
127
°C/W
Thermal resistance, junction emitter to
junction detector
ED
95
°C/W
Thermal resistance, board to ambient (1)
BA
195
°C/W
Thermal resistance, case to ambient (1)
CA
3573
°C/W
TA
θCA
Package
TC
θEC
θDC
θDE
TJD
TJE
θDB
θEB
TB
θBA
19996
TA
Notes
• The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the
temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of
PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay’s thermal
characteristics of optocouplers application note.
(1) For 2 layer FR4 board (4" x 3" x 0.062")
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Forward voltage
IF = 60 mA
Reverse current
VR = 6 V
VR = 0 V, f = 1 MHz
MIN.
TYP.
MAX.
UNIT
VF
1.25
1.65
V
IR
0.01
10
μA
CO
13
VCE = 5 V, f = 1 MHz
CCE
5.2
VCE = 10 V
ICEO
5
100
IF = 10 mA, IC = 2.5 mA
VCEsat
0.25
0.4
CC
0.4
INPUT
Capacitance
pF
OUTPUT
Collector emitter capacitance
Collector emitter leakage current
pF
nA
COUPLER
Collector emitter saturation voltage
Coupling capacitance
V
pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
IC/IF
Rev. 1.0, 08-Feb-13
TEST CONDITION
SYMBOL
MIN.
IF = 10 mA, VCE = 5 V
CTR
100
IF = 1 mA, VCE = 5 V
CTR
34
TYP.
70
MAX.
UNIT
200
%
%
Document Number: 84185
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SFH615A-3X018T
www.vishay.com
Vishay Semiconductors
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
NON-SATURATED
Rise time
IF = 10 mA, VCC = 5 V, TA = 25 °C, RL = 75 
tr
2
μs
Fall time
IF = 10 mA, VCC = 5 V, TA = 25 °C, RL = 75 
tf
2
μs
Turn-on time
IF = 10 mA, VCC = 5 V, TA = 25 °C, RL = 75 
ton
3
μs
Turn-off time
IF = 10 mA, VCC = 5 V, TA = 25 °C, RL = 75 
toff
2.3
μs
Cut-off frequency
IF = 10 mA, VCC = 5 V, TA = 25 °C, RL = 75 
fctr
250
kHz
SATURATED
Rise time
VCC = 5 V, TA = 25 °C, RL = 1 k, IF = 10 mA
tr
3
μs
Fall time
VCC = 5 V, TA = 25 °C, RL = 1 k, IF = 10 mA
tf
14
μs
Turn-on time
VCC = 5 V, TA = 25 °C, RL = 1 k, IF = 10 mA
ton
4.2
μs
Turn-off time
VCC = 5 V, TA = 25 °C, RL = 1 k, IF = 10 mA
toff
23
μs
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Climatic classification (according to IEC 68 part 1)
TYP.
MAX.
UNIT
55/100/21
Comparative tracking index
CTI
175
VIOTM
VIOTM
10 000
VIORM
VIORM
890
PSO
399
Vpeak
Vpeak
PSO
400
mW
ISI
ISI
275
mA
TSI
TSI
175
Creepage distance
7
Clearance distance
Insulation thickness, reinforced rated
per IEC 60950 2.10.5.1
°C
mm
7
mm
0.4
mm
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Rev. 1.0, 08-Feb-13
Document Number: 84185
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SFH615A-3X018T
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
30
IF =14 mA
R L = 75 Ω
IF
12 mA
VCC = 5 V
10 mA
IC (mA)
IC
20
8 mA
6 mA
10
47 Ω
4 mA
1 mA
0
isfh615a_01
0
5
10
15
VCE (V)
isfh615a_04
Fig. 2 - Linear Operation (without Saturation)
2 mA
Fig. 5 - Output Characteristics (Typ.) Collector Current vs.
Collector Emitter Voltage
1.2
25°
50°
75°
1Ω
IF
1.1
VF (V)
V CC = 5 V
1.0
47 Ω
isfh615a_02
0.9
10- 1
100
101
102
IF (mA)
isfh615a_05
Fig. 6 - Diode Forward Voltage (Typ.) vs. Forward Current
Fig. 3 - Switching Operation (with Saturation)
103
20
IF = 10 mA, VCE = 5 V
5
f = 1 MHz
15
3
C (pF)
IC
(%)
I
4
2
102
1
10
CCE
5
5
101
- 25
isfh615a_03
0
0
25
50
75
TA (°C)
Fig. 4 - Current Transfer Ratio (Typ.) vs. Temperature
Rev. 1.0, 08-Feb-13
10-2
isfh615a_06
10-1
100
101
102
Ve (V)
Fig. 7 - Transistor Capacitance (Typ.) vs. Collector Emitter Voltage
Document Number: 84185
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SFH615A-3X018T
www.vishay.com
104
D=
tp
tp
IF
T
T
IF (mA)
103
D=0
0.005
0.01
0.02
0.05
0.1
Vishay Semiconductors
102
0.2
0.5
DC
101
10- 5
isfh615a_07
10- 4
Pulse cycle D = parameter
10- 3
10- 2
10- 1
100
101
tp (s)
Fig. 8 - Permissible Pulse Handling Capability Forward Current
vs. Pulse Width
0.76
2.54
PACKAGE DIMENSIONS millimeters
pin one ID
R0.25
6.48
6.81
9.95 min.
13
3
1.78
1.52
4
4.55
4.83
ISO method A
0.76
1.14
7.62 typ.
0.79 typ.
3.30
3.81
4° typ.
0.25 ± 0.1
0.249
0.102
2.54 typ.
22691
3.5 ± 0.3
9.27 min.
12.1 max.
1.27 typ.
PACKAGE MARKING (example of SFH615A-3X018T)
YWW Y 68
SFH615A-3
V
Notes
• VDE logo is only marked on option 1 parts.
• Tape and reel suffix (T) is not part of the package marking.
Rev. 1.0, 08-Feb-13
Document Number: 84185
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000