VOS628B Datasheet

VOS628B
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Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input,
Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package
FEATURES
• High CTR with low input current
A/C
1
4
C
C/A
2
3
E
• SSOP low profile package (half pitch)
• High collector emitter voltage, VCEO = 80 V
• Isolation test voltage = 3750 VRMS
• Low coupling capacitance
• High common mode transient immunity
22628-1
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION
The VOS628B series has a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a 4-pin
50 mil lead pitch mini-flat package.
APPLICATIONS
It features a high current transfer ratio at low input current,
low coupling capacitance, and high isolation voltage.
• Battery powered equipment
The coupling devices are designed for signal transmission
between two electrically separated circuits.
• Programmable controllers
• Telecom
• Industrial controls
• Office machines
AGENCY APPROVALS
Safety application model number covering all products in
this datasheet is VOS628B. This model number should be
used when consulting safety agency documents.
• UL1577, file no. E76222, double protection
• cUL, accordance to CSA component acceptance service
no. 5A, double protection
• DIN EN 60747-5-5 (VDE 0884-5), available with option 1
• FIMKO EN 60950-1
• CQC GB4943.1-2011 and GB8898-2011 (suitable for
installation altitude below 2000 m)
ORDERING INFORMATION
V
O
S
6
2
8
B
-
#
PART NUMBER
CTR
BIN
SSOP-4, 50 mil pitch
UL, CUL, FIMKO, CQC, VDE (option 1)
SSOP-4, 50 mil pitch
0
0
1
PACKAGE OPTION
T
SSOP-4
TAPE
AND
REEL
≥ 5 mm
CTR (%)
AGENCY CERTIFIED/PACKAGE
UL, cUL, FIMKO, CQC
X
± 1 mA
50 to 600
100 to 200
-
VOS628B-3T
160 to 320
-
50 to 600
100 to 200
160 to 320
VOS628B-X001T
VOS628B-3X001T
VOS628B-4X001T
Note
• Additional options may be possible, please contact sales office.
Document Number: 84314
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.0, 06-Nov-15
VOS628B
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
Power dissipation
Forward current
VR
6
V
Pdiss
100
mW
mA
IF
60
IFSM
1.5
A
Tj
125
°C
Collector emitter voltage
VCEO
80
V
Emitter collector voltage
VECO
7
V
tp ≤ 10 μs
Surge forward current
Junction temperature
OUTPUT
Collector current
IC
50
mA
Power dissipation
Pdiss
150
mW
Tj
125
°C
VISO
3750
VRMS
Ptot
250
mW
Storage temperature range
Tstg
-55 to +150
°C
Ambient temperature range
Tamb
-55 to +110
°C
Tsld
260
°C
Junction temperature
COUPLER
Isolation test voltage
between emitter and detector
t = 1 min
Total power dissipation
Soldering temperature (1)
t = 10 s
300
IF - Maximum Forward Current (mA)
Ptot - Total Power Dissipation (mW)
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices.
Coupled device
250
200
Phototransistor
150
IR diode
100
50
0
0
20
40
60
80
100
120
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation vs. Ambient Temperature
70
60
50
40
30
20
10
0
-25
0
25
50
75
100
125
Tamb - Ambient Temperature (°C)
Fig. 2 - Maximum Forward Current vs. Ambient Temperature
Document Number: 84314
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.0, 06-Nov-15
VOS628B
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Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 5 mA
VF
-
1.18
1.5
V
Reverse current
VR = 6 V
IR
-
0.01
10
μA
VR = 0 V, f = 1 MHz
CI
-
7.3
-
pF
nA
INPUT
Capacitance
OUTPUT
Collector emitter leakage current
VCE = 10 V
ICEO
-
0.3
100
Collector emitter breakdown voltage
IC = 100 μA
BVCEO
80
-
-
V
Emitter collector breakdown voltage
IE = 10 μA
BVECO
7
-
-
V
VCE = 5 V, f = 1 MHz
CCE
-
5
-
pF
IF = 5 mA, IC = 2.5 mA
VCEsat
-
0.25
0.4
V
IF = 10 mA, VCC = 5 V, RL = 100 Ω
fctr
-
155
-
kHz
Collector emitter capacitance
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
IC/IF
IF = ± 1 mA, VCE = 5 V
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
VOS628B
CTR
50
-
600
%
VOS628B-3
CTR
100
-
200
%
VOS628B-4
CTR
160
-
320
%
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Rise and fall time
tr
-
3
-
μs
Fall time
tf
-
3
-
μs
ton
-
6
-
μs
toff
-
4
-
μs
tr
-
3
-
μs
tf
-
12
-
μs
ton
-
4
-
μs
toff
-
18
-
μs
NON-SATURATED
IC = 2 mA, VCC = 5 V,
RL = 100 Ω
Turn-on time
Turn-off time
SATURATED
Rise and fall time
Fall time
IF = 1.6 mA, VCC = 5 V,
RL = 1.9 kΩ
Turn-on time
Turn-off time
VCC = 5 V
Input
Input pulse
RL
VOUT
10 %
Output pulse
90 %
tr
t on
isfh618a_10
tf
t off
isfh618a_12
Fig. 3 - Test Circuit
Fig. 4 - Test Circuit and Waveforms
Document Number: 84314
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.0, 06-Nov-15
VOS628B
www.vishay.com
Vishay Semiconductors
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Climatic classification (according to IEC 68 part 1)
UNIT
55/110/21
Comparative tracking index
CTI
175
VISO
3750
Maximum transient isolation voltage
VIOTM
6000
V
Maximum repetitive peak isolation voltage
VIORM
707
V
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
VIO = 500 V, Tamb = TSI
RIO
109
Ω
Output safety power
PSO
350
mW
Input safety current
ISI
200
mA
Maximum rated withstanding isolation voltage
40 % to 60 % RH, AC test of 1 min
Insulation resistance
Isolation resistance (under fault conditions)
Input safety temperature
VRMS
TSI
175
°C
Apparent charge test voltage (method A)
VIORM x 1.6 = VPR, type and sample test
tm = 60 s, partial discharge < 5 pC
VPR
1132
Vpeak
Apparent charge test voltage (method B)
VIORM x 1.875 = VPR, 100 % production
test with tm = 1 s, partial discharge < 5 pC
VPR
1326
Vpeak
≥5
mm
≥5
mm
≥ 0.4
mm
Creepage distance
Clearance distance
Insulation thickness
DTI
Environment (pollution degree in accordance to DIN VDE 0109)
2
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Tamb = 110 °C
Tamb = 75 °C
Tamb = 25 °C
Tamb = 0 °C
Tamb = - 55 °C
10
IC - Collector Current (mA)
IF - Forward Current (mA)
100
1
0.1
IF = 25 mA
50
IF = 20 mA
40
IF = 15 mA
30
IF = 10 mA
20
10
IF = 5 mA
IF = 1 mA
0
0.6
0.8
1.0
1.2
1.4
1.6
VF - Forward Voltage (V)
Fig. 5 - Forward Voltage vs. Forward Current
0
1
2
3
4
5
6
7
8
9
10
VCE - Collector Emitter Voltage (V)
Fig. 6 - Collector Current vs. Collector Emitter Voltage
Document Number: 84314
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Rev. 1.0, 06-Nov-15
VOS628B
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Vishay Semiconductors
1.4
10 000
NCTR - Normalized CTR (sat)
ICE0 - Leakage Current (nA)
IF = 0 mA
1000
VCE = 40 V
100
10
VCE = 24 V
1
0.1
VCE = 12 V
0.01
0.001
1.2
1.0
0.8
0.6
0.4
0.2
0
-60 -40 -20
0
20
40
60
Normalized to CTR value:
IF = 1 mA, VCE = 5 V, Tamb = 25 °C
-60 -40 -20
80 100 120
Tamb - Ambient Temperature (°C)
IC - Collector Current (mA)
35
IF = 25 mA
25
20
IF = 1 mA
IF = 10 mA
IF = 0.5 mA
IF = 5 mA
15
10
5
IF = 2 mA
0
0.0
0.1
0.2
0.3
40
60
80 100 120
0.4
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Normalized to CTR value:
IF = 1 mA, VCE = 5 V, Tamb = 25 °C
-60 -40 -20
Fig. 8 - Collector Current vs. Collector Emitter Voltage
0
20
40
60
80 100 120
Tamb - Ambient Temperature (°C)
VCE - Collector Emitter Voltage (V)
Fig. 11 - Normalized Current Transfer Ratio vs.
Ambient Temperature (non-sat.)
0.12
2.0
IF = 1 mA
0.10
0.08
0.06
0.04
0.02
NCTR - Normalized CTR (sat)
VCEsat - Collector Emitter Voltage (V)
20
Fig. 10 - Normalized Current Transfer Ratio vs.
Ambient Temperature (sat.)
NCTR - Normalized CTR (non-saturated)
Fig. 7 - Collector Emitter Current vs. Ambient Temperature
30
0
Tamb - Ambient Temperature (°C)
1.8
1.6
1.4
Tamb = 0 °C
VCE = 0.4 V
Normalized to:
IF = 1 mA,
VCE = 5 V
1.2
1.0
0.8
0.6
Tamb = 25 °C
0.4
0.2
Tamb = 110 °C
0.0
0.00
-60 -40 -20
0
20
40
60
80 100 120
Tamb - Ambient Temperature (°C)
Fig. 9 - Collector Emitter Voltage vs. Ambient Temperature
Tamb = -55 °C
0.1
1
10
100
IF - Forward Current (mA)
Fig. 12 - Current Transfer Ratio vs. Forward Current (sat.)
Document Number: 84314
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.0, 06-Nov-15
VOS628B
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1000
Tamb = 0 °C
Tamb = -55 °C
2.0
1.5
Tamb = 25 °C
1.0
Tamb = 110 °C
0.5
Normalized to:
IF = 1 mA, VCE = 5 V
ton, toff - Switching Time (μs)
NCTR - Normalized CTR (NS)
2.5
0.0
VCE = 5 V
IF = 1 mA
toff (μs)
100
ton (μs)
10
1
0.1
1
10
100
0
Fig. 13 - Current Transfer Ratio vs. Forward Current (non-sat.)
10
15
20
Fig. 16 - Switching Time vs. Load Resistance
0
1000
VCE = 5 V,
Tamb = 25 °C
RL = 100 Ω
-5
-10
100
Voltage Gain
fCTR - Cut-off-Frequency (kHz)
5
RL - Load Resistance (kΩ)
IF - Forward Current (mA)
10
-15
-20
RL = 1000 Ω
-25
-30
-35
1
0.1
VCE = 5 V
-40
1
10
100
IC - Collector Current (mA)
1
10
100
1000
f - Frequency (kHz)
Fig. 14 - Cut-Off Frequency vs. Collector Current
Fig. 17 - Voltage Gain vs. Frequency
0
VCE = 5 V
-20
RL = 100 Ω
Phase Angle (deg)
-40
-60
-80
-100
RL = 1000 Ω
-120
-140
-160
1
10
100
1000
f - Frequency (kHz)
Fig. 15 - Phase Angle vs. Frequency
Document Number: 84314
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Rev. 1.0, 06-Nov-15
VOS628B
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PACKAGE DIMENSIONS (in millimeters)
4
3
0.2 ± 0.05
4.40 typ.
0.60
Pin One I.D.
+ 0.20
- 0.30
7.00 ± 0.30
Lead coplanarity
0.1 max.
2
Possible footprint
1.27
0.9
2.85 max.
2.60 ± 0.20
2.00 ± 0.10
1
1.27 nom.
5.00
7.60
0.10 ± 0.10
0.4 ± 0.1
PACKAGE MARKING (example of VOS628B-3X001T)
Pin 1 dimple
628B3X
V YWW 68
Notes
• Option 1 is reflected with letter “X”.
• Tape and reel suffix (T) is not part of the package marking.
Document Number: 84314
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For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Rev. 1.0, 06-Nov-15
VOS628B
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Vishay Semiconductors
PACKAGING INFORMATION (TAPE AND REEL) (in millimeters)
Top cover tape
Embossed carrier
Embossment
17998
Fig. 18 - Tape and Reel Shipping Medium
2 ± 0.1
0.3 ± 0.05
4 ± 0.1
1.55 ± 0.05
1.75 ± 0.1
Pin 1
7.5 ± 0.1
16 ± 0.3
7.4 ± 0.1
4.4
7.4 ± 0.1
5°
2.2 ± 0.1
8 ± 0.1
2.6 ± 0.1
2.95 ± 0.1
1.6 ± 0.1
Fig. 19 - Tape and Reel Packing (3000 parts per reel)
SOLDER PROFILES
HANDLING AND STORAGE CONDITIONS
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
ESD level: HBM class 2
Floor life: unlimited
Conditions: Tamb < 30 °C, RH < 85 %
200
Moisture sensitivity level 1, according to J-STD-020
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp down 6 °C/s
50
max. ramp up 3 °C/s
0
0
19841
50
100
150
200
250
300
Time (s)
Fig. 20 - Lead (Pb)-free Reflow Solder Profile According to
J-STD-020 for SMD Devices
Document Number: 84314
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Rev. 1.0, 06-Nov-15
Legal Disclaimer Notice
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000