TCET2600, TCET4600 Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input (Dual, Quad Channel) FEATURES • Extra low coupling capacity - typical 0.2 pF Quad Channel • High common mode rejection Dual Channel • Low temperature coefficient of CTR • Rated impulse voltage (transient overvoltage) VIOTM = 10 kV peak • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV peak i179012-2 C • Rated isolation VIOWM = 600 VRMS E voltage (RMS includes DC) • Rated recurring peak voltage (repetitive) VIORM = 848 Vpeak • Thickness though insulation ≥ 0.4 mm 1 A • Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 175 C 8 PIN • Compliant to RoHS Directive to 2002/95/EC and in accordance WEEE 2002/96/EC 16 PIN V D E 17196_1 C AGENCY APPROVALS • UL1577, file no. E52744 system code H, double protection DESCRIPTION • CSA 22.2 bulletin 5A, double protection The TCET2600, TCET4600 consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in 8 pin or 16 lead plastic dual inline package. • DIN EN 60747-5-2 (VDE 0884) DIN EN 60747-5-5 (pending) • FIMKO ORDERING INFORMATION DIP T C E T # 6 0 0 PART NUMBER 7.62 mm CTR (%) AGENCY CERTIFIED/ PACKAGE ± 5 mA UL, cUL, VDE, FIMKO 20 to 300 DIP-8, dual channel TCET2600 DIP-16, quad channel TCET4600 ABSOLUTE MAXIMUM RATINGS PARAMETER (1) (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF ± 60 mA Forward surge current Power dissipation Junction temperature Document Number: 83726 Rev. 1.6, 10-Dec-10 tp ≤ 10 μs IFSM ± 1.5 A Pdiss 100 mW Tj 125 °C For technical questions, contact: [email protected] www.vishay.com 1 TCET2600, TCET4600 Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input (Dual, Quad Channel) ABSOLUTE MAXIMUM RATINGS PARAMETER (1) (Tamb = 25 °C, unless otherwise specified) TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V mA OUTPUT Collector current IC 50 ICM 100 mA Pdiss 150 mW Tj 125 °C VRMS tp/T = 0.5, tp ≤ 10 ms Collector peak current Power dissipation Junction temperature COUPLER Isolation test voltage (RMS) t=1s VISO 5300 VIORM 890 VP Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb - 55 to + 100 °C Storage temperature range Tstg - 55 to + 150 °C Tsld 260 °C Isolation voltage 2 mm from case, t ≤ 10 s Soldering temperature (2) Notes (1) Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.6 UNIT INPUT Forward voltage IF = ± 50 mA VF 1.25 VR = 0 V, f = 1 MHz Cj 50 Collector emitter voltage IC = 100 μA VCEO 70 V Emitter collector voltage IE = 100 μA VECO 7 V VCE = 20 V, IF = 0 A, E=0 ICEO 100 nA Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 100 kHz f = 1 MHz Ck 0.3 pF Junction capacitance V pF OUTPUT Collector dark current COUPLER Coupling capacitance Note • Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER IC/IF www.vishay.com 2 TEST CONDITION SYMBOL MIN. VCE = 5 V, IF = ± 5 mA CTR 20 TYP. For technical questions, contact: [email protected] MAX. UNIT 300 % Document Number: 83726 Rev. 1.6, 10-Dec-10 TCET2600, TCET4600 Optocoupler, Phototransistor Output, Vishay Semiconductors AC Input (Dual, Quad Channel) MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF 275 mA Pdiss 400 mW VIOTM 10 kV Tsi 175 °C INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature Note • According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test PARAMETER 100 %, ttest = 1 s Vpd 1.669 Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 10 kV Vpd 1.424 kV Ptot - Total Power Dissipation (mW) Insulation resistance MAX. UNIT kV VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω VIOTM 450 t1, t2 t3 , t4 ttest tstres 400 Phototransistor Psi (mW) 350 300 = 1 to 10 s =1s = 10 s = 12 s VPd 250 VIOWM VIORM 200 IR-diode Isi (mA) 150 100 50 0 t3 ttest t4 0 0 22441 TYP. 25 50 75 100 125 150 175 13930 t1 tTr = 60 s Tsi - Safety Temperature (°C) Fig. 1 - Derating Diagram Document Number: 83726 Rev. 1.6, 10-Dec-10 t2 t stres t Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5 For technical questions, contact: [email protected] www.vishay.com 3 TCET2600, TCET4600 Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input (Dual, Quad Channel) SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) td 3 μs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tr 3 μs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) tf 4.7 μs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ts 0.3 μs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) ton 6 μs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 3) toff 5 μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) ton 9 μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) toff 10 μs IF IF +5V IF 0 0 IC = 2 mA; adjusted through input amplitude RG = 50 Ω tp = 0.01 T tp = 50 µs Channel I Channel II 50 Ω 100 Ω Oscilloscope RL > 1 MΩ CL < 20 pF Fig. 3 - Test Circuit, Non-Saturated Operation IF IF = 10 mA 0 t 100 % 90 % 10 % 0 tr td t on tp td tr t on (= td + tr) 13343 tp IC Pulse duration Delay time Rise time Turn-on time ts tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 5 - Switching Times +5V IC RG = 50 tp = 0.01 T tp = 50 µs Channel I Channel II 50 Oscilloscope RL > 1 M CL < 20 pF 1k 13344 Fig. 4 - Test Circuit, Saturated Operation www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 83726 Rev. 1.6, 10-Dec-10 TCET2600, TCET4600 Optocoupler, Phototransistor Output, Vishay Semiconductors AC Input (Dual, Quad Channel) Ptot - Total Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 300 10 000 250 200 Phototransistor 150 IR-diode 100 IF = 0 mA ICE0 - Leakage Current (nA) Coupled device 50 1000 100 40 80 0.01 0.001 - 60 - 40 - 20 40 60 80 100 30 IC - Collector Current (mA) VF - Forward Voltage (V) 20 Fig. 9 - Leakage Current vs. Ambient Temperature 1.8 1.6 Tamb = 0 °C Tamb = - 40 °C 1.4 Tamb = - 55 °C 1.2 Tamb = 25 °C Tamb = 50 °C Tamb = 75 °C 1.0 0.8 Tamb = 100 °C 25 IF = 25 mA 20 IF = 10 mA 15 10 IF = 5 mA 5 IF = 1 mA IF = 2 mA 0 0.6 0.1 1 10 0 100 IF - Forward Current (mA) 22462 22464 Fig. 7 - Forward Current vs. Forward Voltage 0.1 0.2 0.3 0.4 VCE - Collector Emitter Voltage (sat) (V) Fig. 10 - Collector Current vs. Collector Emitter Voltage (sat) 50 1.4 45 NCTR - Normalized CTR (NS) IC - Collector Current (mA) 0 Tamb - Ambient Temperature (°C) 22465 Fig. 6 - Total Power Dissipation vs. Ambient Temperature IF = 30 mA 40 IF = 20 mA 35 30 IF = 15 mA 25 IF = 10 mA 20 15 IF = 5 mA 10 5 1.2 0 1 2 3 4 5 6 7 IF = 5 mA 0.8 0.6 Fig. 8 - Collector Current vs. Collector Emitter Voltage (NS) Document Number: 83726 Rev. 1.6, 10-Dec-10 IF = 1 mA 0.4 0.2 0 - 60 - 40 - 20 8 VCE - Collector Emitter Voltage (NS) (V) VCE = 5 V IF = 10 mA 1.0 0 22463 VCE = 12 V 0.1 120 Tamb - Ambient Temperature (°C) 96 11700 VCE = 24V 1 0 0 VCE = 40 V 10 22466 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 11 - Normalized CTR (NS) vs. Ambient Temperature For technical questions, contact: [email protected] www.vishay.com 5 TCET2600, TCET4600 Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input (Dual, Quad Channel) 0 VCE = 0.4 V IF = 5 mA - 40 IF = 10 mA 0.8 0.6 IF = 1 mA 0.4 VCE = 5 V - 20 1.0 Phase (deg) NCTR - Normalized CTR (sat) 1.2 - 60 - 80 - 100 - 120 0.2 - 140 0 - 60 - 40 - 20 - 160 0 20 40 60 80 100 1 10 Fig. 12 - Normalized CTR (sat) vs. Ambient Temperature 1000 VCE = 5 V VCC = 5 V Tamb = 0 °C 1.2 Tamb = - 40 °C 1.0 Tamb = - 55 °C 0.8 0.6 Tamb = 25 °C 0.4 100 10 Tamb = 50 °C Tamb = 75 °C 0.2 Tamb = 100 °C 1 0.0 0.1 1 10 0.1 100 IF - Forward Current (mA) 22468 Tamb = 0 °C Tamb = - 40 °C 0.8 T = - 55 °C amb 0.6 Tamb = 25 °C 0.4 Tamb = 50 °C 0.2 Tamb = 75 °C Tamb = 100 °C 0.0 100 1000 ton, toff - Switching Time (μs) VCE = 0.4 V 10 IC (mA) Fig. 16 - FCTR vs. IC 1.2 1.0 1 22471 Fig. 13 - Normalized CTR (NS) vs. Forward Current NCTR - Normalized CTR (sat) 1000 Fig. 15 - FCTR vs. Phase Angle FCTR (kHz) NCTR - Normalized CTR (NS) 1.4 100 f (kHz) 22470 Tamb - Ambient Temperature (°C) 22467 VCE = 5 V, IF = 10 mA 100 toff (μs) 10 ton (μs) 1 0.1 0.1 22469 1 10 100 IF - Forward Current (mA) Fig. 14 - Normalized CTR (sat) vs. Forward Current www.vishay.com 6 0 22472 5 10 15 20 RL - Load Resistance (kΩ) Fig. 17 - Switching Time vs. Load Resistance For technical questions, contact: [email protected] Document Number: 83726 Rev. 1.6, 10-Dec-10 TCET2600, TCET4600 Optocoupler, Phototransistor Output, Vishay Semiconductors AC Input (Dual, Quad Channel) PACKAGE DIMENSIONS in millimeters Pin one ID 4 3 2 1 5 6 7 8 6.645 ± 0.165 ISO method A 9.77 ± 0.14 0.95 ± 0.19 7.62 typ. 0.79 4° typ. 3.555 ± 0.255 6.095 ± 0.255 1.27 10° 3.045 ± 0.255 0.70 ± 0.19 3° to 9° 0.51 ± 0.05 2.54 typ. 0.25 ± 0.05 i178006 Pin one ID 8 7 6 5 4 3 2 1 6.48 6.81 9 10 11 12 13 14 15 16 ISO method A 19.77 20.07 0.76 1.14 0.79 7.62 typ. 3.30 3.81 4° 0.46 0.56 0.51 0.89 2.54 typ. 1.27 10° typ. 3° to 9° 2.79 3.30 5.84 6.35 0.20 0.30 i178007 PACKAGE MARKING TCET2600 V YWW H 68 21764-94 Document Number: 83726 Rev. 1.6, 10-Dec-10 For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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