VEMD6010X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: 1206 • Dimensions (L x W x H in mm): 4 x 2 x 1.05 • Radiant sensitive area (in mm2): 0.85 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 60° • Floor life: 72 h, MSL 4, acc. J-STD-020 • Lead (Pb)-free reflow soldering • AEC-Q101 qualified DESCRIPTION • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VEMD6010X01 is a high speed and high sensitive PIN photodiode. It is a small surface mount device (SMD) including the chip with a 0.85 mm2 sensitive area detecting visible and near infrared radiation. APPLICATIONS • High speed photo detector PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (deg) λ0.1 (nm) VEMD6010X01 9.5 ± 60 430 to 1100 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD6010X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 1206 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.2, 03-Jul-15 SYMBOL VALUE UNIT VR 32 V PV 215 mW Tj 110 °C Tamb -40 to +110 °C °C Tstg -40 to +110 Acc. reflow solder profile fig. 8 Tsd 260 °C Acc. J-STD-051 RthJA 270 K/W Document Number: 84175 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD6010X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF IR = 100 μA, E = 0 V(BR) VR = 10 V, E = 0 Iro VR = 0 V, f = 1 MHz, E = 0 CD 12 pF VR = 5 V, f = 1 MHz, E = 0 CD 3.6 pF Forward voltage Breakdown voltage Reverse dark current Diode capacitance MIN. TYP. MAX. UNIT 1 V 32 V 1 3 nA Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo 356 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo -3.1 mV/K Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik 9 μA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira Reverse light current 6.7 9.5 ϕ Angle of half sensitivity 12.4 μA ± 60 deg Wavelength of peak sensitivity λp 900 nm Range of spectral bandwidth λ0.1 430 to 1100 nm Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 Ira - Reverse Light Current (µA) Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8427 40 60 0.1 Ira - Reverse Light Current (μA) VR = 5 V λ = 950 nm 1.0 0.8 0.6 94 8416 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.2, 03-Jul-15 1 10 Fig. 3 - Reverse Light Current vs. Irradiance 100 1.2 0.1 Ee - Irradiance (mW/cm2 ) 1.4 0 VR = 5 V λ = 950 nm 0.01 Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Ira, rel - Relative Reverse Light Current 1 0.001 0.01 100 80 10 λ = 950 nm Ee = 1 mW/cm2 10 1 0.1 1 10 100 VR - Reverse Voltage (V) Fig. 4 - Reverse Light Current vs. Reverse Voltage Document Number: 84175 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD6010X01 www.vishay.com Vishay Semiconductors REFLOW SOLDER PROFILE E=0 f = 1 MHz 10 300 8 6 4 2 200 max. 30 s 150 max. ramp down 6 °C/s 10 1 100 max. ramp up 3 °C/s 0 0 VR - Reverse Voltage (V) 18438 max. 100 s max. 120 s 100 50 0 0.1 max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 Temperature (°C) CD - Diode Capacitance (pF) 12 19841 50 100 150 200 250 300 Time (s) Fig. 5 - Diode Capacitance vs. Reverse Voltage S(λ)rel - Relative Spectral Sensitivity Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 DRYPACK 1.0 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 0.8 0.6 FLOOR LIFE 0.4 Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: 0.2 Floor life: 72 h 0 400 500 600 700 800 Conditions: Tamb < 30 °C, RH < 60 % 900 1000 1100 Moisture sensitivity level 4, acc. to J-STD-020. λ - Wavelength (nm) DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 0° 10° 20° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Ie, rel - Relative Radiant Sensitivity 30° 80° 0.6 0.4 0.2 0 94 8013 Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement Rev. 1.2, 03-Jul-15 Document Number: 84175 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD6010X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 2.4 ± 0.15 2 ± 0.15 0.45 1.05 ± 0.15 ° 97 0.745 0.745 Anode 1 4 ± 0.15 0.97 0.19 0.81 (1) 0.81 Cathode 2 ± 0.15 Optical center Recommended solder pad footprint 0.88 0.12 1.02 0.88 Device center 2.46 4.64 Drawing-No. 6.541-5100.01-4 Preliminary issue 04.07.2013 Rev. 1.2, 03-Jul-15 Technical drawings according to DIN specification. Not indicated tolerances ± 0.1mm Document Number: 84175 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD6010X01 www.vishay.com Vishay Semiconductors BLISTER TAPE DIMENSIONS in millimeters Rev. 1.2, 03-Jul-15 Document Number: 84175 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD6010X01 www.vishay.com Vishay Semiconductors REEL DIMENSIONS in millimeters 20874 Rev. 1.2, 03-Jul-15 Document Number: 84175 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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