TEMD5010X01 Datasheet

TEMD5010X01
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: surface mount
• Package form: top view
• Dimensions (L x W x H in mm): 5 x 4.24 x 1.12
• Radiant sensitive area (in mm2): 7.5
• AEC-Q101 qualified
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
20535
• Angle of half sensitivity: ϕ = ± 65°
• Floor life: 72 h, MSL 4, acc. J-STD-020
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DESCRIPTION
TEMD5010X01 is a high speed and high sensitive PIN
photodiode. It is a miniature surface mount device (SMD)
including the chip with a 7.5 mm2 sensitive area detecting
visible and near infrared radiation.
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
COMPONENT
Ira (μA)
ϕ (deg)
λ0.1 (nm)
TEMD5010X01
55
± 65
430 to 1100
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TEMD5010X01
Tape and reel
MOQ: 1500 pcs, 1500 pcs/reel
Top view
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
SYMBOL
VALUE
VR
60
V
PV
215
mW
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 110
°C
Tsd
260
°C
RthJA
350
K/W
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb ≤ 25 °C
Junction temperature
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.5, 23-Aug-11
Acc. reflow solder profile fig. 8
UNIT
Document Number: 84679
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEMD5010X01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
IF = 50 mA
VF
TYP.
MAX.
UNIT
1
1.3
V
IR = 100 μA, E = 0
V(BR)
VR = 10 V, E = 0
Iro
2
30
nA
VR = 0 V, f = 1 MHz, E = 0
CD
70
VR = 3 V, f = 1 MHz, E = 0
CD
25
40
pF
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
MIN.
60
V
pF
Open circuit voltage
Ee = 1 mW/cm2, λ = 950 nm
Vo
350
mV
Temperature coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
- 2.6
mV/K
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
50
μA
Temperature coefficient of Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
0.1
%/K
Reverse light current
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Ira
55
μA
45
Angle of half sensitivity
ϕ
± 65
deg
Wavelength of peak sensitivity
λp
940
nm
Range of spectral bandwidth
λ0.1
430 to 1100
nm
Noise equivalent power
VR = 10 V, λ = 950 nm
NEP
4 x 10-14
W/√Hz
Rise time
VR = 10 V, RL = 1 kΩ,
λ = 820 nm
tr
100
ns
Fall time
VR = 10 V, RL = 1 kΩ,
λ = 820 nm
tf
100
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
I ra rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8403
40
60
80
Tamb - Ambient Temperature (°C)
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
100
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Rev. 1.5, 23-Aug-11
1.4
0
94 8409
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 84679
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEMD5010X01
www.vishay.com
Vishay Semiconductors
S(λ)rel - Relative Spectral Sensitivity
100
10
VR = 5 V
λ = 950 nm
1
0.1
0.01
0.8
0.6
0.4
0.2
0
0.1
1
10
Ee - Irradiance (mW/cm2)
12787
1.0
350
550
Fig. 3 - Reverse Light Current vs. Irradiance
750
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
100
Srel - Relative Radiant Sensitivity
Ira - Reverse Light Current (µA)
0.5 mW/cm 2
mW/cm 2
10
0.1 mW/cm 2
0.05 mW/cm 2
λ = 950 nm
1
0.1
1
10
20°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
100
VR - Reverse Voltage (V)
12788
10°
30°
1 mW/cm 2
0.2
1150
950
λ - Wavelength (nm)
94 8420
ϕ - Angular Displacement
Ira - Reverse Light Current (µA)
1000
80°
0.6
0.4
0.2
0
94 8406
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
CD - Diode Capacitance (pF)
80
E=0
f = 1 MHz
60
40
20
0
0.1
948407
1
10
100
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Rev. 1.5, 23-Aug-11
Document Number: 84679
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEMD5010X01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Drawing-No.: 6.541-5060.01-4
Issue: 3; 05.02.08
Not indicated tolerances ± 0.1
20536
Rev. 1.5, 23-Aug-11
Document Number: 84679
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEMD5010X01
www.vishay.com
Vishay Semiconductors
TAPING DIMENSIONS in millimeters
20537
REEL DIMENSIONS in millimeters
20874
Rev. 1.5, 23-Aug-11
Document Number: 84679
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEMD5010X01
www.vishay.com
Vishay Semiconductors
SOLDER PROFILE
DRYPACK
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
200
150
max. 100 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
0
0
19841
50
100
150
200
250
300
Time (s)
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
acc. J-STD-020D
Rev. 1.5, 23-Aug-11
FLOOR LIFE
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 4
Floor life: 72 h
Conditions: Tamb < 30 °C, RH < 60 %
max. 30 s
max. 120 s
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or
recommended conditions:
192 h at 40 °C (+ 5 °C), RH < 5 %
or
96 h at 60 °C (+ 5 °C), RH < 5 %.
Document Number: 84679
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000