VEMD11940FX01 Datasheet

VEMD11940FX01
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: surface mount
• Package form: Side view
• Dimensions (L x W x H in mm): 3 x 2 x 0.6
• AEC-Q101 qualified
• High radiant sensitivity
• Daylight blocking filter matched with 830 nm
to 950 nm IR emitters
• Angle of half sensitivity: ϕ = ± 75°
• Package
matched
VSMB11940X01
with
IR
emitter
• Floor life: 168 h, MSL 3, according to J-STD-020
DESCRIPTION
VEMD11940FX01 is a high speed and high sensitive PIN
photodiode in a miniature side looking, surface mount
package (SMD) with daylight blocking filter. Filter is matched
with IR emitters operating at wavelength of 830 nm to
950 nm. The photo sensitive area of the chip is 0.053 mm2.
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector
• Infrared remote control
• Infrared data transmission
• Photo interrupters
• IR touch panels
PRODUCT SUMMARY
COMPONENT
VEMD11940FX01
Ira (μA)
ϕ (deg)
λ0.5 (nm)
1.13
± 75
780 to 1050
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VEMD11940FX01
Tape and reel
MOQ: 4000 pcs, 4000 pcs/reel
Side view
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb ≤ 25 °C
Junction temperature
SYMBOL
VALUE
VR
60
UNIT
V
PV
104
mW
Tj
100
°C
Operating temperature range
Tamb
-40 to +100
°C
Storage temperature range
Tstg
-40 to +100
°C
According to reflow solder profile fig. 8
Tsd
260
°C
According to J-STD-051
RthJA
580
K/W
Soldering temperature
Thermal resistance junction / ambient
Rev. 1.1, 04-Dec-15
Document Number: 84194
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD11940FX01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 50 mA
VF
-
1.7
-
V
IR = 100 μA, E = 0
V(BR)
32
-
-
V
VR = 10 V, E = 0
Iro
-
<1
10
nA
VR = 0 V, f = 1 MHz, E = 0
CD
-
1.1
-
pF
VR = 3 V, f = 1 MHz, E = 0
CD
-
0.5
-
pF
Ee = 1 mW/cm2, λ = 950 nm
Vo
-
350
-
mV
Temperature coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
-
-2.7
-
mV/K
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
-
1.13
-
μA
Temperature coefficient of Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
-
0.1
-
%/K
Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V
Ira
0.8
1.13
1.8
μA
ϕ
-
± 75
-
deg
Wavelength of peak sensitivity
λp
-
950
-
nm
Range of spectral bandwidth
λ0.5
-
780 to 1050
-
nm
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Reverse light current
Angle of half sensitivity
Rise time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
-
100
-
ns
Fall time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
-
100
-
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
Ira - Reverse Light Current (µA)
Reverse Dark Current (nA)
1000
100
10
1
0
20
40
80
60
100
VR = 5 V
λ = 950 nm
10
1
0.1
0.01
120
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1
10
Fig. 3 - Reverse Light Current vs. Irradiance
1.4
2.5
Cj - Junction Capacitance (pF)
Ira, rel - Relative Reverse Light Current
0.1
Ee - Irradiance (mW/cm2)
Tamb - Ambient Temperature (°C)
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
0
94 8416
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.1, 04-Dec-15
2.0
1.5
1.0
0.5
0.0
- 10 - 9 - 8 - 7 - 6 - 5 - 4 - 3 - 2 - 1
0
1
VF - Forward Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Document Number: 84194
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD11940FX01
www.vishay.com
Vishay Semiconductors
0°
10°
20°
30°
Ie, rel - Relative Radiant Sensitivity
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
vertical
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
S(λ)rel - Relative Spectral Sensitivity
1.0
80°
0
600
700
800
900
1000
1100
0.6
0.4
0.2
0
λ - Wavelength (nm)
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
0°
10°
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement Vertical
20°
horizontal
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
Ie, rel - Relative Radiant Sensitivity
30°
80°
0.6
0.4
0.2
0
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement Horizontal
REFLOW SOLDER PROFILE
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, according to J-STD-020.
DRYING
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020D
Rev. 1.1, 04-Dec-15
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Document Number: 84194
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD11940FX01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
2 ± 0.2
Optical center
Polarity
identification
Cathode
3
1.5
2
0.4
0.4
C
A
1 ± 0.2
Anode
0.9
0.6
Recommended Footprint
0.9
2
5
1.5
0.2
Technical drawings
according to DIN
specification.
Drawing- No: 6.550-5327.01-4
Issue: Prel. 26.11.2013
Rev. 1.1, 04-Dec-15
Not indicated tolerances ± 0.1 mm
Document Number: 84194
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD11940FX01
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters
Reel-design is representative for different types
Unreel direction
Empty trailer 160 mm min.
Ø
1 .5
17
8
Em
Ø
Co
pty
lea
A
13
ve
r ta
de
pe
r1
40
00
0m
mm
m
mi
mi
n.
n.
8 .4
Label posted
here
14
.4
Device
Cathode
2
4
8
3.5 1.75
Ø 1.55
0.9
0.23
H - H (5 : 1)
A
H
H
Ø1
Drawing refers to following types: VSMB11940
VEMD11940F
Rev. 1.1, 04-Dec-15
4
Drawing No. 9.800-5126.01-4; Issue: Prel. 23.05.2013
Document Number: 84194
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000