6N137, VO2601, VO2611, VO2630, VO2631, VO4661 Datasheet

6N137, VO2601, VO2611, VO2630, VO2631, VO4661
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Vishay Semiconductors
High Speed Optocoupler, Single and Dual, 10 MBd
FEATURES
Single channel
NC 1
• Choice of CMR performance of 15 kV/μs,
5 kV/μs, and 1000 V/μs
• High speed: 10 MBd typical
• +5 V CMOS compatibility
• Pure tin leads
• Guaranteed AC and DC performance over
temperature: -40 °C to +100 °C temperature
range
• Meets IEC 60068-2-42 (SO2) and IEC 60068-2-43 (H2S)
requirements
• Low input current capability of 5 mA
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
8 V
CC
A 2
7 V
E
C 3
6 VO
NC 4
5 GND
6N137, VO2601, VO2611
Dual channel
A1 1
8 VCC
C1 2
7 V
O1
C2 3
6 V
O2
A2
4
5 GND
APPLICATIONS
VO2630, VO2631, VO4661
•
•
•
•
•
•
•
•
•
22747
DESCRIPTION
The 6N137, VO2601, and VO2611 are single channel
10 MBd optocouplers utilizing a high efficient input LED
coupled with an integrated optical photodiode IC detector.
The detector has an open drain NMOS-transistor output,
providing less leakage compared to an open collector
Schottky clamped transistor output. The VO2630, VO2631,
and VO4661 are dual channel 10 MBd optocouplers. For the
single channel type, an enable function on pin 7 allows the
detector to be strobed. The internal shield provides a
guaranteed common mode transient immunity of 5 kV/μs for
the VO2601 and VO2631 and 15 kV/μs for the VO2611 and
VO4661. The use of a 0.1 μF bypass capacitor connected
between pin 5 and 8 is recommended.
Microprocessor system interface
PLC, ATE input/output isolation
Computer peripheral interface
Digital fieldbus isolation: CC-link, DeviceNet, profibus, SDS
High speed A/D and D/A conversion
AC plasma display panel level shifting
Multiplexed data transmission
Digital control power supply
Ground loop elimination, noise isolation
AGENCY APPROVALS
•
•
•
•
•
UL1577
cUL
DIN EN 60747-5-5 (VDE 0884-5) available with option 1
BS EN 60950-1
CQC GB8898-2011, GB4943.1-2011
ORDERING INFORMATION
V
O
2
6
0
1
PART NUMBER
-
X
0
#
PACKAGE OPTION
#
DIP-8
Option 6
7.62 mm
10.16 mm
T
TAPE
AND
REEL
Option 7
> 0.7 mm
AGENCY CERTIFIED/PACKAGE
BSI, UL, cUL
DIP-8
DIP-8, 400 mil, option 6
SMD-8, option 7
SMD-8, option 9
VDE, BSI, UL, cUL
DIP-8, 400 mil, option 6
SMD-8, option 7
Rev. 1.9, 16-Mar-15
1000
6N137
6N137-X006
6N137-X007T
6N137-X009T
1000
-
Option 9
> 0.1 mm
CHANNELS 1
CHANNELS 2
CMR (V/μs)
CMR (V/μs)
5000
15 000
1000
5000
15 000
VO2601
VO2611
VO2630
VO2631
VO4661
VO2601-X006 VO2611-X006 VO2630-X006 VO2631-X006 VO4661-X006
VO2601-X007T VO2611-X007T VO2630-X007T VO2631-X007T VO4661-X007T
VO2630-X009T
5000
15 000
1000
5000
15 000
VO2601-X016 VO2611-X016
VO2631-X016
VO2601-X017T VO2611-X017T
VO2631-X017T
-
Document Number: 84732
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6N137, VO2601, VO2611, VO2630, VO2631, VO4661
www.vishay.com
Vishay Semiconductors
TRUTH TABLE (positive logic)
LED
ENABLE
OUTPUT
On
H
L
Off
H
H
On
L
H
Off
L
H
On
NC
L
Off
NC
H
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Average forward current (single channel)
IF
20
mA
Average forward current
(per channel for dual channel)
IF
15
mA
Reverse input voltage
VR
5
V
Enable input voltage
VE
VCC + 0.5 V
V
INPUT
Enable input current
IE
5
mA
IFSM
200
mA
Output power dissipation
(single channel)
Pdiss
35
mW
Output power dissipation (per channel for
dual channel)
Pdiss
25
mW
Surge current
t = 100 μs
OUTPUT
Supply voltage
1 min maximum
Output current
Output voltage
VCC
7
V
IO
50
mA
VO
7
V
Output power dissipation (single channel)
Pdiss
85
mW
Output power dissipation (per channel for
dual channel)
Pdiss
60
mW
Storage temperature
Tstg
-55 to +150
°C
Operating temperature
Tamb
-40 to +100
°C
260
°C
260
°C
COUPLER
Lead solder temperature
for 10 s
Solder reflow temperature
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
MAX.
UNIT
°C
Operating temperature
Tamb
-40
100
Supply voltage
VCC
4.5
5.5
V
Input current low level
IFL
0
250
μA
Input current high level
IFH
5
15
mA
Logic high enable voltage
VEH
2
VCC
V
Logic low enable voltage
VEL
0
0.8
V
Output pull up resistor
RL
330
4K
Ω
5
-
Fanout
Rev. 1.9, 16-Mar-15
RL = 1 kΩ
N
Document Number: 84732
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6N137, VO2601, VO2611, VO2630, VO2631, VO4661
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 10 mA
VF
1.1
VR = 5 V
IR
1.4
1.7
V
0.01
10
μA
f = 1 MHz, VF = 0 V
CI
55
VE = 0.5 V, IF = 0 mA
ICCH
4.1
7
mA
VE = VCC, IF = 0 mA
ICCH
3.3
6
mA
IF = 0 mA
ICCH
6.5
12
mA
INPUT
Input forward voltage
Reverse current
Input capacitance
pF
OUTPUT
High level supply current
(single channel)
High level supply current
(dual channel)
VE = 0.5 V, IF = 10 mA
ICCL
4
7
mA
VE = VCC, IF = 10 mA
ICCL
3.3
6
mA
Low level supply current
(dual channel)
IF = 10 mA
ICCL
6.5
12
mA
High level output current
VE = 2 V, VCC = 5.5 V, IF = 250 μA
IOH
0.002
1
μA
Low level output voltage
VE = 2 V, IF = 5 mA,
IOL (sinking) = 13 mA
VOL
0.2
0.6
V
Input threshold current
VE = 2 V, VCC = 5.5 V,
IOL (sinking) = 13 mA
ITH
2.4
5
mA
High level enable current
VE = 2 V
IEH
-0.6
-1.6
mA
Low level enable current
VE = 0.5 V
IEL
-0.8
-1.6
mA
Low level supply current
(single channel)
High level enable voltage
VEH
Low level enable voltage
VEL
2
V
0.8
V
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
Propagation delay time to high
output level
RL = 350 Ω, CL = 15 pF
Propagation delay time to low
output level
RL = 350 Ω, CL = 15 pF
SYMBOL
MIN.
TYP.
MAX.
tPLH
20
48
75 (1)
ns
100
ns
tPLH
tPHL
25
50
tPHL
UNIT
75 (1)
ns
100
ns
Pulse width disortion
RL = 350 Ω, CL = 15 pF
|tPHL - tPLH|
2.9
35
ns
Propagation delay skew
RL = 350 Ω, CL = 15 pF
tPSK
8
40
ns
Output rise time (10 % to 90 %)
RL = 350 Ω, CL = 15 pF
tr
23
ns
Output fall time (90 % to 10 %)
RL = 350 Ω, CL = 15 pF
tf
7
ns
Propagation delay time of
enable from VEH to VEL
RL = 350 Ω, CL = 15 pF,
VEL = 0 V, VEH = 3 V
tELH
12
ns
Propagation delay time of
enable from VEL to VEH
RL = 350 Ω, CL = 15 pF,
VEL = 0 V, VEH = 3 V
tEHL
11
ns
Notes
• Over recommended temperature (Tamb = - 40 °C to + 100 °C), VCC = 5 V, IF = 7.5 mA unless otherwise specified. All typicals at Tamb = 25 °C,
VCC = 5 V.
(1) 75 ns applies to the 6N137 only, a JEDEC® registered specification
Rev. 1.9, 16-Mar-15
Document Number: 84732
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6N137, VO2601, VO2611, VO2630, VO2631, VO4661
www.vishay.com
Vishay Semiconductors
VCC
Single channel
Pulse gen.
Zo = 50 Ω
t f = t r = 5 ns
1
IF
2
Input IF
monitoring
node
RM
VCC 8
VE
7
VOUT
3
4
RL
Output VO
monitoring
node
6
5
GND
IF = 7.5 mA
IF = 3.75 mA
0 mA
Input IF
0.1 µF
bypass
VOH
1.5 V
VOL
Output VO
C L = 15 pF
t PHL
t PLH
The probe and Jig capacitances are included in C L
18964-2
Fig. 1 - Single Channel Test Circuit for tPLH, tPHL, tr and tf
Pulse gen.
Zo = 50 Ω
t f = t r = 5 ns
VCC
Dual channel
IF
Input
monitoring
node
RM
1
VCC 8
2
7
3
6
4
5
GND
RL
0.1 µF
bypass
Output VO
monitoring
node
CL= 15 pF
18963-5
Fig. 2 - Dual Channel Test Circuit for tPLH, tPHL, tr and tf
Input VE
monitoring node
Pulse gen.
Zo = 50 Ω
t f = t r = 5 ns
1
7.5 mA
IF
VCC
Single channel
2
VCC 8
VE
7
VOUT
3
4
RL
0.1 µF
bypass
6
GND
Output VO
monitoring
node
Input VE
CL = 15 pF
Output VO
3V
1.5 V
tEHL
tELH
1.5 V
5
The probe and Jig capacitances are included in CL
18975-2
Fig. 3 - Single Channel Test Circuit for tEHL, and tELH
COMMON MODE TRANSIENT IMMUNITY
PARAMETER
Common mode transient immunity
(high)
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
|VCM| = 10 V, VCC = 5 V, IF = 0 mA,
VO(min.) = 2 V, RL = 350 Ω, Tamb = 25 °C (1)
|CMH|
1000
|VCM| = 50 V, VCC = 5 V, IF = 0 mA,
VO(min.) = 2 V, RL = 350 Ω, Tamb = 25 °C (2)
|CMH|
5000
10 000
V/μs
|VCM| = 1 kV, VCC = 5 V, IF = 0 mA,
VO(min.) = 2 V, RL = 350 Ω, Tamb = 25 °C (3)
|CMH|
15 000
25 000
V/μs
|VCM| = 10 V, VCC = 5 V, IF = 7.5 mA,
VO(max.) = 0.8 V, RL = 350 Ω, Tamb = 25 °C (1)
|CML|
1000
|VCM| = 50 V, VCC = 5 V, IF = 7.5 mA,
VO(max.) = 0.8 V, RL = 350 Ω, Tamb = 25 °C (2)
|CML|
5000
10 000
V/μs
|VCM| = 1 kV, VCC = 5 V, IF = 7.5 mA,
VO(max.) = 0.8 V, RL = 350 Ω, Tamb = 25 °C (3)
|CML|
15 000
25 000
V/μs
V/μs
V/μs
Notes
(1) For 6N137 and VO2630
(2) For VO2601 and VO2631
(3) For VO2611 and VO4661
Rev. 1.9, 16-Mar-15
Document Number: 84732
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6N137, VO2601, VO2611, VO2630, VO2631, VO4661
www.vishay.com
Vishay Semiconductors
VCC
IF
Single channel
VCC 8
VE
7
1
B
A
VFF
2
VOUT
3
6
4
5
GND
RL
0.1 µF
bypass
VCM (PEAK)
VCM 0 V
Output VO
monitoring
node
Switch AT A: IF = 0 mA
VO 5 V
VO 0.5 V
CMH
VO (min.)
Switch AT A: IF = 7.5 mA
VO (max.)
VCM
+
Pulse generator
ZO = 50 Ω
CML
18976-2
Fig. 4 - Single Channel Test Circuit for Common Mode Transient Immunity
IF
Dual channel
B
1
VCC 8
2
7
3
6
VCC
A
VFF
4
18977-1
GND
RL
0.1 µF
bypass
Output VO
monitoring
node
5
VCM
+
Pulse generator
Z O = 50 Ω
Fig. 5 - Dual Channel Test Circuit for Common Mode Transient Immunity
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
SYMBOL
Climatic classification (according to IEC 68 part 1)
VALUE
UNIT
40/100/21
Comparative tracking index
CTI
175
VISO
5300
Maximum transient isolation voltage
VIOTM
8000
V
Maximum repetitive peak isolation voltage
VIORM
890
V
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
PSO
500
mW
Input safety current
ISI
300
mA
Input safety temperature
TSI
175
°C
≥8
mm
Rated isolation voltage
Isolation resistance
t = 1 min
Output safety power
VRMS
Creepage distance
Standard DIP-4
Clearance distance
Standard DIP-4
≥8
mm
Creepage distance
400 mil DIP-4
≥8
mm
≥8
mm
≥ 0.4
mm
Clearance distance
400 mil DIP-4
Insulation thickness, reinforced rated
per BSI 60950
DTI
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Rev. 1.9, 16-Mar-15
Document Number: 84732
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6N137, VO2601, VO2611, VO2630, VO2631, VO4661
www.vishay.com
Vishay Semiconductors
1.6
1.5
IF = 20 mA
1.3
IF = 10 mA
1.2
IF = 1 mA
1.1
1.0
-40
-20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 6 - Forward Voltage vs. Ambient Temperature
1.60
VF - Forward Voltage (V)
1.55
1.50
1.45
1.40
1.35
1.30
1.25
1.20
1.15
1.10
0
5
10 15 20 25 30 35 40 45 50
IF - Forward Current (mA)
17611
IR - Reverse Current (nA)
7
6
5
4
VR = 5 V
2
1
0
-40
17613-1
-20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 8 - Reverse Current vs. Ambient Temperature
Rev. 1.9, 16-Mar-15
3.5
3.0
2.5
VCC = 7 V
IF = 10 mA
VCC = 5 V
IF = 10 mA
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 9 - Low Level Supply Current vs. Ambient Temperature
3.5
VCC = 7 V
IF = 0.25 mA
3.4
3.3
VCC = 5 V
IF = 0.25 mA
3.2
3.1
3.0
2.9
2.8
-40
17615
Fig. 7 - Forward Voltage vs. Forward Current
3
4.0
17614
ICCH - High Level Supply Current (mA)
1.4
-20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 10 - High Level Supply Current vs. Ambient Temperature
ITH - Input Threshold On Current (µA)
VF - Forward Voltage (V)
1.7
ICCI - Low Level Supply Current (mA)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
2.8
2.7
2.6
RL = 350 Ω
2.5
2.4
RL = 1 kΩ
2.3
RL = 4 kΩ
2.2
2.1
-40
17616
-20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 11 - Input Threshold On Current vs. Ambient Temperature
Document Number: 84732
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6N137, VO2601, VO2611, VO2630, VO2631, VO4661
IOH - High Level Output Current (nA)
Vishay Semiconductors
2.6
2.5
2.4
RL = 350 Ω
2.3
2.2
RL = 1 kΩ
2.1
RL = 4 kΩ
2.0
-40
-20
0
20
40
60
80
Tamb - Ambient Temperature (°C)
17617
VOL - Low Level Output Voltage (V)
40
35
30
25
20
15
10
5
0
-40
IL = 16 mA
IL = 13 mA
IL = 10 mA
0.10
IL = 6 mA
0.05
60
80
100
4.0
3.5
3.0
2.5
2.0
RL = 350 Ω
1.5
RL = 1 kΩ
1.0
RL = 4 kΩ
0.0
-20
0
20
40
60
80
Fig. 13 - Low Level Output Voltage vs. Ambient Temperature
IF = 5 mA
IF = 10 mA
40
30
20
10
-20
0
20
40
60
80
Fig. 14 - Low Level Output Current vs. Ambient Temperature
2
3
4
5
Fig. 16 - Output Voltage vs. Forward Input Current
120
tPLH, 4 kΩ
100
80
60
40
tPLH, 1 kΩ
tPLH, 350 Ω
tPHL, 350 Ω
20
100
Tamb - Ambient Temperature (°C)
1
IF - Forward Input Current (mA)
17621
tP - Propagation Delay Time (ns)
60
50
0
100
Tamb - Ambient Temperature (°C)
Rev. 1.9, 16-Mar-15
40
4.5
0.5
17619
20
5.0
0.15
0
-40
0
5.5
VCC = 5.5 V
IF = 5 mA
0.20
0.00
-40
-20
Tamb - Ambient Temperature (°C)
Fig. 15 - High Level Output Current vs. Ambient Temperature
0.30
17618
IOL - Low Level Output Current (mA)
45
17620
Fig. 12 - Input Threshold Off Current vs. Ambient Temperature
0.25
50
100
Vo - Output Voltage (V)
ITH - Input Threshold Off Current (µA)
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17622
0
-40
tPHL, 1 kΩ
tPHL, 4 kΩ
-20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 17 - Propagation Delay vs. Ambient Temperature
Document Number: 84732
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6N137, VO2601, VO2611, VO2630, VO2631, VO4661
Vishay Semiconductors
300
120
tr, f - Rise and Fall Time (ns)
tPLH, 4 kΩ
100
80
tPLH, 1 kΩ
tPLH, 350 Ω
60
40
tPHL, 350 Ω
tPHL, 1 kΩ
20
tPHL, 4 kΩ
5
7
9
11
13
150
tf, RL = 350 Ω
tf, RL = 1 kΩ
tf, RL = 4 kΩ
100
tr, RL = 1 kΩ
50
tr, RL = 350 Ω
0
-40
-20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
17626
Fig. 18 - Propagation Delay vs. Forward Current
Fig. 21 - Rise and Fall Time vs. Ambient Temperature
50
300
tr, f - Rise and Fall Time (ns)
PWD - Pulse Width Distortion (ns)
200
15
IF - Forward Current (mA)
17623
RL = 4 kΩ
40
30
20
RL = 1 kΩ
10
RL = 350 Ω
0
-40
tr, RL = 4 kΩ
250
200
150
tf, RL = 350 Ω
tf, RL = 1 kΩ
tf, RL = 4 kΩ
100
tr, RL = 1 kΩ
50
tr, RL = 350 Ω
0
-20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
17624
60
50
RL = 4 kΩ
40
30
RL = 1 kΩ
20
10
RL = 350 Ω
0
5
17625
7
9
11
13
Fig. 20 - Pulse Width Distortion vs. Forward Current
Rev. 1.9, 16-Mar-15
9
11
13
15
IF - Forward Current (mA)
Fig. 22 - Rise and Fall Time vs. Forward Current
60
50
tELH = 4 kΩ
40
tELH = 350 Ω
tEHL = 350 Ω
30
20
tELH = 1 kΩ
10
15
IF - Forward Current (mA)
7
5
17627
Fig. 19 - Pulse Width Distortion vs. Ambient Temperature
PWD - Pulse Width Distortion (ns)
tr, RL = 4 kΩ
250
0
tE - Enable Propagation Delay (ns)
tP - Propagation Delay Time (ns)
www.vishay.com
17628
tEHL = 1 kΩ
0
-40
-20
0
tEHL = 4 kΩ
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 23 - Enable Propagation Delay vs. Ambient Temperature
Document Number: 84732
8
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6N137, VO2601, VO2611, VO2630, VO2631, VO4661
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
DIP-8, Standard
10.16 max.
9.75 ± 0.15
0.95 ± 0.20
7.62 typ.
1.27 ± 0.10
0.50 ± 0.10
2.54 nom.
3 x 2.54 = 7.62
7° ty p
8
7
6
5
1
2
3
4
.
0
0.25 ± 0.1
3.10 ± 0.25
0.70 ± 0.20
6.00 ± 0.25
3.55 ± 0.20
6.70 ± 0.15
Pin one I.D.
DIP-8, Option 6
10.16 typ.
7.62 typ.
6.70 ± 0.15
0.1 min.
3.55 ± 0.20
10.16 max.
9.75 ± 0.15
0.95 ± 0.20
1.27 ± 0.10
0.50 ± 0.10
10.55 ± 0.40
2.54 nom.
3 x 2.54 = 7.62
8
7
6
5
1
2
3
4
0.25 ± 0.10
Pin one I.D.
Rev. 1.9, 16-Mar-15
Document Number: 84732
9
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6N137, VO2601, VO2611, VO2630, VO2631, VO4661
www.vishay.com
Vishay Semiconductors
SMD-8, Option 7
10.05 ± 0.25
7.62 typ.
6.70 ± 0.15
0.70 ± 0.20
1.27 ± 0.10
2.54 nom.
3 x 2.54 = 7.62
7
6
8.00 min.
8.40 min.
0.75 ± 0.25
Leads coplanarity
0.10 max.
5
0.76
8
0.25 ± 0.10
3.55 ± 0.20
10.16 max.
9.75 ± 0.15
0.95 ± 0.20
5
1.78
2.54
.2
R0
Pin one I.D.
1
2
3
8.00 min.
11.05
4
1.52
SMD-8, Option 9
10.05 ± 0.25
7.62 typ.
6.70 ± 0.15
0.18 ± 0.08
3.55 ± 0.20
0.25 ± 0.10
10.16 max.
9.75 ± 0.15
0.95 ± 0.20
1.27 ± 0.10
2.54 nom.
3 x 2.54 = 7.62
7
6
Leads coplanarity
0.10 max.
8.00 min.
5
0.76
8
0.75 ± 0.20
5
1.78
2.54
.2
R0
Pin one I.D.
1
Rev. 1.9, 16-Mar-15
2
3
4
8.00 min.
11.05
1.52
Document Number: 84732
10
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6N137, VO2601, VO2611, VO2630, VO2631, VO4661
www.vishay.com
Vishay Semiconductors
PACKAGE MARKING (example of VO2601-X017T)
VO2601
V YWW 68
Notes
• VDE logo is only marked on option 1 parts.
• Tape and reel suffix (T) is not part of the package marking.
SOLDER PROFILES
HANDLING AND STORAGE CONDITIONS
ESD level: HBM class 2
300
5s
Lead temperature
Temperature (°C)
250
235 °C to
260 °C
first wave
200
wave
ca. 200 K/s
150
100 °C to
130 °C
100
Conditions: Tamb < 30 °C, RH < 85 %
Moisture sensitivity level 1, according to J-STD-020
ca. 2 K/s
2 K/s
50
full line: typical
dotted line:
process limits
second
wave
Floor life: unlimited
ca. 5 K/s
forced cooling
0
0
50
100
94 8626
150
200
250
Time (s)
Fig. 24 - Wave Soldering Double Wave Profile According to
J.STD-020 for DIP-8 Devices
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp down 6 °C/s
50
max. ramp up 3 °C/s
0
0
19841
50
100
150
200
250
300
Time (s)
Fig. 25 - Lead (Pb)-free Reflow Solder Profile According to
J-STD-020 for SMD-8 Devices
Rev. 1.9, 16-Mar-15
Document Number: 84732
11
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000
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