6N135, 6N136 Datasheet

6N135, 6N136
www.vishay.com
Vishay Semiconductors
High Speed Optocoupler, 1 MBd,
Photodiode with Transistor Output
FEATURES
• Isolation test voltages: 5300 VRMS
• TTL compatible
• High bit rates: 1 Mbit/s
NC 1
8 C (VCC)
A 2
7 B (VB)
C 3
6 C (VO)
• High common-mode interference immunity
• Bandwidth 2 MHz
• Open-collector output
5 E (GND)
NC 4
• External base wiring possible
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
AGENCY APPROVALS
• UL1577 file no. E52744, double protection
• DIN EN 60747-5-5 (VDE0884-5) available with option 1
DESCRIPTION
• cUL components acceptance service no. 5A
The 6N135 and 6N136 are optocouplers with a GaAIAs
infrared emitting diode, optically coupled with an integrated
photo detector which consists of a photo diode and a
high-speed transistor in a DIP-8 plastic package.
• CQC GB8898-2011, GB4943.1-2011
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2 MHz. The potential
difference between the circuits to be coupled should not
exceed the maximum permissible reference voltages.
ORDERING INFORMATION
6
N
1
3
#
PART NUMBER
-
X
0
#
#
PACKAGE OPTION
DIP-8
Option 6
7.62 mm
10.16 mm
T
TAPE
AND
REEL
Option 7
> 0.7 mm
AGENCY CERTIFIED / PACKAGE
UL, CSA
DIP-8
≥7
≥ 19
6N136
-
6N136-X006
SMD-8, option 7
6N135-X007T (1)
6N136-X007T (1)
SMD-8, option 9
-
6N136-X009T (1)
VDE, UL, CSA
DIP-8
> 0.1 mm
CTR (%)
6N135
DIP-8, 400 mil, option 6
Option 9
≥7
≥ 19
-
6N136-X001
SMD-8, option 7
6N135-X017T (1)
6N136-X017T
SMD-8, option 9
-
6N136-X019T
Note
(1) Also available in tubes; do not add T to end
Rev. 1.9, 02-Nov-15
Document Number: 83604
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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6N135, 6N136
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ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5
V
Forward current
IF
25
mA
IFSM
50
mA
Peak forward current
Maximum surge forward current
t = 1 ms, duty cycle 50 %
t ≤ 1 μs, 300 pulses/s
1
A
Rth
700
K/W
Pdiss
45
mW
Supply voltage
VS
-0.5 to 15
V
Output voltage
VO
-0.5 to 15
V
VEBO
5
V
8
mA
Thermal resistance
Power dissipation
Tamb = 70 °C
OUTPUT
Emitter base voltage
Output current
IO
Maximum output current
16
mA
IB
5
mA
300
K/W
Pdiss
100
mW
Storage temperature range
Tstg
-55 to +150
°C
Ambient temperature range
Tamb
-55 to +100
°C
Tsld
260
°C
Base current
Thermal resistance
Power dissipation
Tamb = 70 °C
COUPLER
Soldering temperature
max. ≤ 10 s, dip soldering
≥ 0.5 mm from case bottom
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 16 mA
VF
-
1.33
1.9
V
Breakdown voltage
IR = 10 μA
VBR
5
-
-
V
μA
Reverse current
Capacitance
Temperature coefficient, forward voltage
VR = 5 V
IR
-
0.5
10
VR = 0 V, f = 1 MHz
CO
-
30
-
pF
IF = 16 mA
ΔVF/ΔTA
-
-1.7
-
mV/°C
OUTPUT
Logic low supply current
IF = 16 mA, VO = open, VCC = 15 V
ICCL
-
150
-
μA
Logic high supply current
IF = 0 mA, VO = open, VCC = 15 V
ICCH
-
0.01
1
μA
V
Output voltage, output low
Output current, output high
IF = 16 mA, IO = 1.1 mA, VCC = 4.5 V
6N135
VOL
-
0.1
0.4
IF = 16 mA, IO = 3.0 mA, VCC = 4.5 V
6N136
VOL
-
0.1
0.4
V
IF = 0 mA, VO = VCC = 5.5 V
IOH
-
3
500
nA
IF = 0 mA, VO = VCC = 15 V
IOH
-
0.01
1
μA
f = 1 MHz
CIO
-
0.6
-
pF
COUPLER
Capacitance (input to output)
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Rev. 1.9, 02-Nov-15
Document Number: 83604
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6N135, 6N136
www.vishay.com
Vishay Semiconductors
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
IF = 16 mA, VO = 0.4 V, VCC = 4.5 V
Current transfer
ratio
IF = 16 mA, VO = 0.5 V, VCC = 4.5 V
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
6N135
CTR
7
16
-
%
6N136
CTR
19
35
-
%
6N135
CTR
5
-
-
%
6N136
CTR
15
-
-
%
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
High to low
Low to high
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 16 mA, VCC = 5 V, RL = 4.1 kΩ
6N135
tPHL
-
0.3
1.5
μs
IF = 16 mA, VCC = 5 V, RL = 1.9 kΩ
6N136
tPHL
-
0.2
0.8
μs
IF = 16 mA, VCC = 5 V, RL = 4.1 kΩ
6N135
tPLH
-
0.3
1.5
μs
IF = 16 mA, VCC = 5 V, RL = 1.9 kΩ
6N136
tPLH
-
0.2
0.8
μs
COMMON MODE TRANSIENT IMMUNITY (Tamb = 25 °C, unless otherwise specified)
PARAMETER
High
Low
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 0 mA, VCM = 10 VP-P, VCC = 5 V, RL = 4.1 kΩ
6N135
|CMH|
-
1000
-
V/μs
IF = 0 mA, VCM = 10 VP-P, VCC = 5 V, RL = 1.9 kΩ
6N136
|CMH|
-
1000
-
V/μs
IF = 16 mA, VCM = 10 VP-P, VCC = 5 V, RL = 4.1 kΩ
6N135
|CML|
-
1000
-
V/μs
IF = 16 mA, VCM = 10 VP-P, VCC = 5 V, RL = 1.9 kΩ
6N136
|CML|
-
1000
-
V/μs
SAFETY AND INSULATION RATINGS
PARAMETER
TEST CONDITION
Climatic classification
According to IEC 68 part 1
Pollution degree
According to DIN VDE 0109
Comparative tracking index
Insulation group IIIa
SYMBOL
VALUE
UNIT
55 / 100 / 21
2
CTI
175
Maximum rated withstanding isolation voltage
According to UL1577, t = 1 min
VISO
5300
Maximum transient isolation voltage
According to DIN EN 60747-5-5
VIOTM
8000
Vpeak
Maximum repetitive peak isolation voltage
According to DIN EN 60747-5-5
VIORM
890
Vpeak
Tamb = 25 °C, VIO = 500 V
RIO
≥ 1012
Ω
Tamb = 100 °C, VIO = 500 V
RIO
≥ 1011
Ω
Output safety power
PSO
500
mW
Input safety current
ISI
300
mA
Input safety temperature
TS
175
°C
≥7
mm
Isolation resistance
Creepage distance
DIP-8
VRMS
Clearance distance
DIP-8
≥7
mm
Creepage distance
DIP-8, 400 mil, option 6
≥8
mm
Clearance distance
DIP-8, 400 mil, option 6
≥8
mm
Creepage distance
SMD-8, option 7
≥8
mm
Clearance distance
SMD-8, option 7
≥8
mm
Creepage distance
SMD-8, option 9
≥8
mm
Clearance distance
SMD-8, option 9
≥8
mm
≥ 0.4
mm
Insulation thickness
DTI
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Rev. 1.9, 02-Nov-15
Document Number: 83604
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6N135, 6N136
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
25
100
IF = 35 mA
IF = 30 mA
20 IF = 25 mA
IF = 20 mA
IF = 15 mA
I = 10 mA
15 F
IF = 5 mA
IF = 1 mA
Tamb = 75 °C
Tamb = 25 °C
10
Tamb = 0 °C
IO - Output Current (mA)
IF - Forward Current (mA)
Tamb = 100 °C
10
5
Tamb = -40 °C
1
1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
0
VF - Forward Voltage (V)
6
IO - Output Current (mA)
IF - LED Current (mA)
20
10
20
40
60
80
Total Power (mW)
100
Detector
80
60
40
Emitter
20
0
i6n135_05
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 3 - Permissible Power Dissipation vs. Temperature
Rev. 1.9, 02-Nov-15
25
IF = 20 mA
IF = 16 mA
4
IF = 10 mA
3
2
IF = 5 mA
IF = 2 mA
1
IF = 1 mA
0
20 40
60
80 100 120
Tamb - Temperature (°C)
Fig. 5 - Output Current vs. Temperature
tP - Propagation Delay Time (ns)
120
20
20
5
20987
Fig. 2 - Permissible Forward LED Current vs. Temperature
0
15
at VO = 0.4 V, VCC = 5 V
0
- 60 - 40 - 20
100
Tamb - Ambient Temperature (°C)
i6n135_04
10
Fig. 4 - Output Current vs. Output Voltage
30
0
5
VO - Output Voltage (V)
Fig. 1 - LED Forward Current vs. Forward Voltage
0
0
900
6N136 at VCC = 5 V
IF = 16 mA, RL = 1.9 kΩ
800
700
tPLH at 1.5 V
tPLH at 3 V
600
500
400
tPHL at 1.5 V
300
200
tPHL at 3 V
100
0
- 60 - 40 - 20
i6n135_08
0
20
40
60
80 100
Tamb - Temperature (°C)
Fig. 6 - Propagation Delay vs. Ambient Temperature
Document Number: 83604
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6N135, 6N136
Vishay Semiconductors
1400
0.6
ΔIF/ΔIO - Small Signal Current
Transfer Ratio
tP - Propagation Delay Time (ns)
www.vishay.com
6N135 at VCC = 5 V
IF = 16 mA, RL = 4.1 kΩ
1200
1000
800
tPLH
600
400
tPHL
200
0.4
0.3
0.2
0.1
0
0
- 60 - 40 - 20
0
20
40
60
80 100
0
Tamb - Temperature (°C)
i6n135_09
VCC = 5 V, RL = 100 Ω
0.5
15
20
25
IF - Forward Current (mA)
i6n135_11
Fig. 7 - Propagation Delay vs. Ambient Temperature
10
5
Fig. 9 - Small Signal Current Transfer Ratio vs.
Quiescent Input Current
IOH - Collector, IC (nA)
100
10
VCC = VO = 15 V
1
VCC = VO = 5 V
0.1
0.01
0.001
- 60 - 40 - 20 0
20
40
60
80 100
Tamb - Temperature (°C)
i6n135_10
Fig. 8 - Logic High Output Current vs. Temperature
Pulse generator
IF
Z O = 50 Ω
t r ,t f = 5 ns
duty cycle 10 %
t ≤ 100 µs
t
5V
1
8
2
7
3
6
VO
4
5
CL
15 pF
IF
IF monitor
VO
5V
RL
1.5 V
VOL
t
100 Ω
ı
tPHL
tPLH
i6n135_01
Fig. 10 - Switching Times
Rev. 1.9, 02-Nov-15
Document Number: 83604
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6N135, 6N136
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VCM
10 V
IF
1
8
2
7
3
6
4
5
90 %
10 %
5V
10 %
A
B
VFF
90 %
0V
RL
VO
t
tr
VO
tf
5V
A: IF = 0 mA
+VCM
Pulse generator
Z O = 50 Ω
t r,t f = 8 ns
t
VO
B: IF = 16 mA
VOL
i6n135_02
t
Fig. 11 - Common-Mode Interference Immunity
PACKAGE DIMENSIONS (in millimeters)
DIP-8, Standard
0.70 ± 0.20
6.00 ± 0.25
3.55 ± 0.20
6.70 ± 0.15
1.27 ± 0.10
0.50 ± 0.10
2.54 nom.
7° typ.
3 x 2.54 = 7.62
8
7
6
5
1
2
3
4
3.10 ± 0.25
7.62 typ.
10.16 max.
9.75 ± 0.15
0.95 ± 0.20
.10
0.25 ± 0
PIN ONE I.D.
Rev. 1.9, 02-Nov-15
Document Number: 83604
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6N135, 6N136
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Vishay Semiconductors
DIP-8, Option 6
10.16 typ.
7.62 typ.
10.16 max.
9.75 ± 0.15
0.95 ± 0.20
0.1 min.
3.55 ± 0.20
6.70 ± 0.15
1.27 ± 0.10
0.50 ± 0.10
0.25 ± 0.10
10.55 ± 0.40
2.54 nom.
3 x 2.54 = 7.62
8
7
6
5
1
2
3
4
PIN ONE I.D.
DIP-8, Option 7
10.05 ± 0.25
10.16 max.
7.62 typ.
9.75 ± 0.15
6.70 ± 0.15
0.70 ± 0.20
1.27 ± 0.10
2.54 nom.
3 x 2.54 = 7.62
0.25 ± 0.10
3.55 ± 0.20
0.95 ± 0.20
8.00 min.
8.40 min.
0.75 ± 0.25
Leads
coplanarity
0.10 max.
Recommended Footprint
8
7
6
5
0.76
PIN ONE I.D.
1
2
3
4
2.54
R0.250
1.78
8.00 min.
11.05
Rev. 1.9, 02-Nov-15
1.52
Document Number: 83604
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6N135, 6N136
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Vishay Semiconductors
DIP-8, Option 9
9.78 ± 0.25
7.62 typ.
10.16 max.
9.75 ± 0.15
0.95 ± 0.20
0.18 ± 0.08
3.55 ± 0.20
0.25 ± 0.10
6.70 ± 0.15
1.27 ± 0.10
2.54 nom.
3 x 2.54 = 7.62
8.00 min.
0.75 ± 0.20
Leads coplanarity
0.10 max.
Recommended Footprint
8
7
6
5
0.76
1
PIN ONE I.D.
2
3
R0.250
2.54
4
1.78
8.00 min.
11.05
1.52
PACKAGE MARKING
6N135
6N136
V YWW 68
V YWW 68
Fig. 12 - 6N135
Fig. 13 - 6N136
Notes
• The VDE logo is only marked on option 1 parts.
• Tape and reel suffix (T) is not part of the package marking.
SOLDER PROFILES
300
300
5s
Lead temperature
ca. 2 K/s
2 K/s
50
full line: typical
dotted line:
process limits
second
wave
Temperature (°C)
Temperature (°C)
235 °C to
260 °C
first wave
200
wave
ca. 200 K/s
150
100 °C to
130 °C
100
200
max. 30 s
150
max. ramp down 6 °C/s
50
0
94 8626
50
100
max. ramp up 3 °C/s
0
150
200
250
Time (s)
Fig. 14 - Wave Soldering Double Wave Profile According to
J-STD-020 for DIP-8 Devices
Rev. 1.9, 02-Nov-15
max. 100 s
max. 120 s
100
ca. 5 K/s
forced cooling
0
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
250
0
19841
50
100
150
200
250
300
Time (s)
Fig. 15 - Lead (Pb)-free Reflow Solder Profile According to
J-STD-020 for SMD-8 Devices
Document Number: 83604
8
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6N135, 6N136
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HANDLING AND STORAGE CONDITIONS
ESD level: HBM class 2
Floor life: unlimited
Conditions: Tamb < 30 °C, RH < 85 %
Moisture sensitivity level 1, according to J-STD-020
Rev. 1.9, 02-Nov-15
Document Number: 83604
9
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Revision: 02-Oct-12
1
Document Number: 91000
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