DMHC10H170SFJ

DMHC10H170SFJ
100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
ADVANCE INFORMATION
ADVANCED INFORMATION
Product Summary
Device
BVDSS
Q1 & Q4
100V
Q2 & Q3
-100V
Features
ID
TA = +25°C


Low On-Resistance
Low Input Capacitance
160mΩ @ VGS = 10V
2.9A
200mΩ @ VGS = 4.5V
2.6A
250mΩ @ VGS = -10V
-2.3A



Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
300mΩ @ VGS = -4.5V
-2.1A
RDS(ON)
MAX
Mechanical Data


Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.


Case: V-DFN5045-12
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram

Terminals: Finish – NiPdAu over Copper Leadframe.

Solderable per MIL-STD-202, Method 208 e4
Weight: 0.056 grams (Approximate)
Applications

High-Efficiency Bridge Rectifiers
Pin 1
V-DFN5045-12
G1 S1
S1 G2
S2 S2
D1/D2
D1/D2
D3/D4
D3/D4
G4 S4
S4 G3
S3 S3
Bottom View
Top View
S3 7
6 S2
Q3 (Pch)
Q2 (Pch)
Pin
Pin
Out
5 Out
S3 8
S2
Pin
Pin
Out
4 Out
G3 9
G2
Pin
Pin
Out
S4 10 Q4 (Nch)
S1
3 Out
Q1 (Nch)
Pin
Pin
Out
2 Out
S4 11
S1
Pin
Pin
Out
1 Out
G4 12
G1
Pin
Pin
Out
Out
D3,D4 to backside
D1,D2 to backside
Internal Schematic
Ordering Information (Note 4)
Part Number
DMHC10H170SFJ-13
Notes:
Case
V-DFN5045-12
Tape Width
12mm
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
C170SJ
YY WW
DMHC10H170SFJ
Document number: DS37571 Rev. 3 - 2
=Manufacturer’s Marking
C170SJ = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
1 of 9
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January 2016
© Diodes Incorporated
DMHC10H170SFJ
Maximum Ratings Q1 & Q4 N-Channel (@TA = +25°C, unless otherwise specified.)
ADVANCE INFORMATION
ADVANCED INFORMATION
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, Duty Cycle = 1%)
ID
IS
IDM
Value
100
±20
2.9
2.3
2.5
13
Unit
V
V
Value
-100
±20
-2.3
-1.9
-2.4
-11
Unit
V
V
A
A
A
Maximum Ratings Q2 & Q3 P-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, Duty Cycle = 1%)
ID
IS
IDM
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Note:
TA = +25°C
Symbol
PD
RJA
RJC
TJ, TSTG
Value
2.1
60
6
-55 to +150
Unit
W
°C/W
°C
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
DMHC10H170SFJ
Document number: DS37571 Rev. 3 - 2
2 of 9
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January 2016
© Diodes Incorporated
DMHC10H170SFJ
ADVANCE INFORMATION
ADVANCED INFORMATION
Electrical Characteristics Q1 & Q4 N-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
100






1
±100
V
µA
nA
VGS = 0V, ID = 250µA
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(TH)
RDS(ON)
VSD
2.0
111
121
0.9
3.0
160
200
1.0
V
Static Drain-Source On-Resistance
1.0



V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 5A
VGS = 4.5V, ID = 5A
VGS = 0V, IS = 10A
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR














1,167
36
25
1.3
4.9
9.7
2.0
2.0
10.5
11.1
42.6
12.8
30.3
35.2














pF
VDS = 25V, VGS = 0V, f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = 80V, ID = 12.8A
ns
VDD = 50V, RG = 25Ω, ID = 12.8A
ns
nC
VGS = 0V, IS = 12.8A, dI/dt = 100A/μs
VGS = 0V, IS = 12.8A, dI/dt = 100A/μs
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
mΩ
Test Condition
Electrical Characteristics Q2 & Q3 P-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-100






1
±100
V
µA
nA
VGS = 0V, ID = -250µA
VDS = -80V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(TH)
RDS(ON)
VSD
-1.6
191
213
-0.9
-3.0
250
300
-1.2
V
Static Drain-Source On-Resistance
-1.0



V
VDS = VGS, ID = -250µA
VGS = -10V, ID = -5A
VGS = -4.5V, ID =-5A
VGS = 0V, IS = -5A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR














1,239
42
28
13
8.4
17.5
2.8
3.2
9.1
14.9
57.4
34.4
25.2
24.5














pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = -60V, ID = -5A
ns
VDD = -50V, Rg = 9.1Ω, ID = -5A
ns
nC
VGS = 0V, IS = -5A, di/dt = 100A/μs
VGS = 0V, IS = -5A, di/dt = 100A/μs
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
mΩ
Test Condition
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMHC10H170SFJ
Document number: DS37571 Rev. 3 - 2
3 of 9
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January 2016
© Diodes Incorporated
DMHC10H170SFJ
Typical Characteristics - N-CHANNEL
10
VDS= 5.0V
VGS=5.0V
12.0
VGS=4.5V
VGS=4.0V
9.0
8
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS=10.0V
6.0
VGS=3.5V
6
VGS=3.0V
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
250
200
4.5V
150
10.0V
50
0
0
1
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
5
Figure 2. Typical Transfer Characteristic
300
100
0
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(mW)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(mW)
-55℃
0
0
25℃
125℃
2
0.0
85℃
150℃
4
3.0
500
450
400
350
300
250
200
150
ID=5A
100
50
0
4
6
8 10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
2
2
4
6
8
10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
20
Figure 4. Typical Transfer Characteristic
RDS(ON), DRAIN-SOURCE ONRESISTANCE (NORMALIZED)
0.5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(W)
ADVANCE INFORMATION
ADVANCED INFORMATION
15.0
VGS=4.5V
0.4
150℃
0.3
125℃
0.2
85℃
25℃
0.1
0
3
6
9
12
15
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
DMHC10H170SFJ
Document number: DS37571 Rev. 3 - 2
2.5
VGS=10V, ID=5A
2
1.5
VGS=4.5V, ID=5A
1
0.5
-55℃
0
3
0
-50
-25 0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
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DMHC10H170SFJ
0.3
VGS=4.5V, ID=5A
0.2
VGS=10V, ID=5A
0.1
0
-50
-25 0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
2.5
ID=1mA
2
ID=250mA
1.5
1
0.5
0
-50
-25 0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs.
JunctionTemperature
10000
CT, JUNCTION CAPACITANCE (pF)
VGS=0V
IS, SOURCE CURRENT (A)
3
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(W)
0.4
15
12
TA=150℃
9
TA=125℃
TA=85℃
6
TA=25℃
3
TA=-55℃
f=1MHz
Ciss
1000
100
Coss
Crss
0
10
0
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
1.5
0
5
10
15
20
25
30
35
40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
10
100
RDS(ON) Limited
8
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
ADVANCE INFORMATION
ADVANCED INFORMATION
0.5
6
4
VDS=80V, ID=12.8A
2
PW=1ms
1
DC
0
3
6
9
12
15
0.001
Figure 11. Gate Charge
DMHC10H170SFJ
TJ(Max)=+150℃
TC=+25℃
Single Pulse
DUT on
1*MRP board
VGS=10V
0.1
Qg, TOTAL GATE CHARGE (nC)
Document number: DS37571 Rev. 3 - 2
PW=10s
0.1
0.01
0
PW=100ms
10
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PW=1s
PW=100ms
PW=10ms
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12.SOA, Safe Operation Area
1000
January 2016
© Diodes Incorporated
DMHC10H170SFJ
Typical Characteristics - P-CHANNEL
10
VGS=-5.0V
85℃
VGS=-4.5V
VGS=-10.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
8.0
VGS=-4.0V
6.0
VGS=-3.5V
4.0
VGS=-3.0V
2.0
VGS=-2.5V
8
25℃
125℃
-55℃
6
150℃
4
2
VDS= -5.0V
0
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(W)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(W)
0.400
VGS=-4.5V
VGS=-10V
0.200
0.100
0.000
0.8
VGS=-4.5V
0.6
150℃
125℃
0.5
0.4
0.3
85℃
0.2
25℃
0.1
-55℃
0
0
3
6
9
12
6
7
8
0.4
0.3
ID=-5A
0.2
0.1
15
2
4
6
8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
20
Figure 16. Typical Transfer Characteristic
ID, DRAIN CURRENT(A)
DMHC10H170SFJ
5
0.5
0
Figure 17. Typical On-Resistance vs. Drain Current
and Temperature
Document number: DS37571 Rev. 3 - 2
4
0.6
4
6
8 10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
Figure 15. Typical On-Resistance vs. Drain Current
and Gate Voltage
0.7
3
0.7
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
0
2
Fig.14 Typical Transfer Characteristic
0.500
0.300
1
Vgs, Gate-Source Voltage (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13. Typical Output Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(W)
ADVANCE INFORMATION
ADVANCED INFORMATION
10.0
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2.4
2.2
VGS=-10V, ID=-5A
2
1.8
1.6
1.4
VGS=-4.5V, ID=-5A
1.2
1
0.8
0.6
0.4
-50
-25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 18. On-Resistance Variation with
Temperature
January 2016
© Diodes Incorporated
DMHC10H170SFJ
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ONRESISTANCE (W)
0.5
0.4
VGS=-4.5V, ID=-5A
0.3
VGS=-10V, ID=-5A
0.2
0.1
0
-50
2.5
2
ID=-1mA
1.5
ID=-250mA
1
0.5
0
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 19. On-Resistance Variation with
Temperature
-50
-25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 20. Gate Threshold Variation vs. Junction
Temperature
10000
12
TA=150℃
TA=125℃
9
TA=85℃
6
f=1MHz
CT, JUNCTION CAPACITANCE(pF)
VGS=0V
IS, SOURCE CURRENT (A)
3
-25
15
TA=25℃
3
Ciss
1000
100
Coss
Crss
TA=-55℃
0
10
0
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
1.5
0
5
10
15
20
25
30
35
40
VDS, DRAIN-SOURCE VOLTAGE(V)
Figure 21. Diode Forward Voltage vs. Current
Figure 22. Typical Junction Capacitance
100
10
RDS(ON) Limited
8
PW=1ms
10
ID, DRAIN CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
ADVANCE INFORMATION
ADVANCED INFORMATION
0.6
6
4
VDS=-60V, ID=-5A
2
1
DC
0
3
6
9
12
15
Qg, TOTAL GATE CHARGE (nC)
18
0.001
Figure 23. Gate Charge
DMHC10H170SFJ
Document number: DS37571 Rev. 3- 2
PW=10s
0.1
0.01
0
PW=100ms
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PW=1s
TJ(Max)=+150℃
P
W=100ms
TC=+25℃
Single Pulse
PW=10ms
DUT on 1*MRP
board
VGS=-10V
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 24. SOA, Safe Operation Area
1000
January 2016
© Diodes Incorporated
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
ADVANCED INFORMATION
DMHC10H170SFJ
1
D=0.9
0.1
D=0.7
D=0.5
D=0.3
0.01
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
RJA(t)=r(t) * RJA
RJA=111℃/W
Duty Cycle, D=t1 / t2
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 25. Transient Thermal Resistance
100
1000
Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
V-DFN5045-12
A3
A1
A
Seating Plane
D
D2(4x)
k1
E2(4x)
k
E
V-DFN5045-12
Dim
Min
Max
Typ
A
0.75
0.85
0.80
A1
0.00
0.05
0.02
A3
0.203
b
0.25
0.35
0.30
D
4.95
5.05
5.00
D2
1.80
2.00
1.90
E
4.45
4.55
4.50
E2
0.90
1.10
1.00
e
0.80
k
0.50
k1
0.50
k2
0.50
L
0.45
0.55
0.50
z
0.35
All Dimensions in mm
L
k2
z
e
DMHC10H170SFJ
Document number: DS37571 Rev. 3 - 2
b
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January 2016
© Diodes Incorporated
DMHC10H170SFJ
Suggested Pad Layout
ADVANCE INFORMATION
ADVANCED INFORMATION
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
V-DFN5045-12
X2
X1(4x)
C
Dimensions
C
X
X1
X2
Y
Y1
Y2
Y3
Y1(4x)
Y3
Y2
Y
Value (in mm)
0.800
0.400
2.100
4.500
0.700
1.200
2.700
4.800
X
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
DMHC10H170SFJ
Document number: DS37571 Rev. 3 - 2
9 of 9
www.diodes.com
January 2016
© Diodes Incorporated
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