AL5802LP4

AL5802LP4
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30V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER
Description
Pin Assignments
The AL5802LP4 combines a high-gain NPN transistor with a
pre-biased NPN transistor to make a simple small footprint LED
driver.
The LED current is set by an external resistor connected from
REXT Pin (2) to GND Pin (1). The internal high-gain transistor
develops approximately 0.6V across the external resistor.
The AL5802LP4’s open-collector output can operate from 0.8V to
30V making it suitable for industry standard 5V to 24V power
supplies without additional components.
PWM dimming of the LED current can be achieved by either driving
the BIAS Pin (4) with a low impedance voltage source, or driving the
EN Pin (6) with an external open-collector NPN transistor or
open-drain N-Channel MOSFET.
The AL5802LP4 is available in a X2-DFN1310-6 package and is
ideal for driving up to 120mA current.
Internal Schematic
(Top View)
Mechanical Data

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
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
Case: X2-DFN1310-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: NiPdAu (Lead-Free) Plating.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.0013 grams
Features
Applications

Reference Voltage VREXT = 0.65V



-40 to +125°C Temperature Range
0.8V to 30V Open-Collector Output
Negative Temperature Co-Efficient – Automatically Reduces
the LED Current at High Temperatures
Low Thermal Impedance, Small Footprint X2-DFN1310-6
Package with Exposed Pads
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)


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(Bottom View)
Linear LED Driver
LED Signs
Offline LED Luminaries
Ordering Information (Note 8)
Note:
Device
Qualification
Packaging
AL5802LP4
Commercial
X2-DFN1310-6
Tape and Reel
Quantity
Part Number Suffix
3,000/Tape & Reel
-7
8. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
802 = Product Type Marking Code
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
AL5802LP4
Document number: DS37441 Rev. 4 - 2
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AL5802LP4
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Typical Application Circuit
Pin Descriptions
Pin Number
1
Name
GND
2
REXT
3
4
5
OUT
BIAS
N/C
6
EN
Function
Ground Reference Point for Setting LED Current
Current Sense Pin
LED current sensing resistor should be connected from here to GND
Open-Collector LED Driver Output
Biases the Open Collector Output Transistor
No Connection
Enable Pin for PWM Dimming
Provides access to the base of Q2 and collector of Q1
Functional Block Diagram
Figure 1 Block Diagram
AL5802LP4
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Absolute Maximum Ratings
Symbol
Values
Unit
VOUT
Output Voltage Relative to GND
30
V
VBIAS
BIAS Voltage Relative to GND
30
V
VFB
LED Voltage Relative to GND
6
V
VEN
EN Voltage Relative to GND
6
V
REXT Voltage Relative to GND
6
V
120
mA
VREXT
IOUT
Characteristics
Output Current
TJ
Operating Junction Temperature
-40 to +150
°C
TST
Storage Temperature
-55 to +150
°C
These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure. Operation at the absolute maximum rating for extended
periods may reduce device reliability.
Package Thermal Data
Characteristic
Power Dissipation (Note 4) @TA = +25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @TA = +25°C
Symbol
Value
Unit
PD
0.36
W
RθJA
347
°C/W
Unit
Recommended Operating Conditions
Symbol
VBIAS
Supply Voltage Range
Min
4.5
Max
30
VOUT
OUT Voltage Range
0.8
30
ILED
LED Pin Current (Note 5)
10
100
mA
Operating Ambient Temperature Range
-40
+125
°C
TA
Notes:
Parameter
V
4. Device mounted on FR-4 PCB, 2oz with minimum recommended pad layout.
5. Subject to ambient temperature, power dissipation and PCB.
AL5802LP4
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AL5802LP4
Electrical Characteristics: NPN Transistor – Q1 (@TA = +25°C, unless otherwise specified.)
Symbol
Characteristic
Min
Typ
Max
Unit
IC = 1.0mA, IB = 0
Test Condition
40
—
—
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10µA, IC = 0
6.0
—
—
V
ICEX
Collector Cutoff Current (Note 7)
VCE = 30V, VEB(OFF) = 3.0V
—
—
50
nA
IBL
Base Cutoff Current (Note 7)
VCE = 30V, VEB(OFF) = 3.0V
—
—
50
nA
hFE
DC Current Gain
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
70
100
—
—
—
300
—
VCE(SAT)
Collector-Emitter Saturation Voltage (Note 6)
IC = 10mA, IB = 1.0mA
—
—
0.20
V
VBE(SAT)
Base-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
0.65
—
0.85
V
VBE(ON)
Base-Emitter Turn-On Voltage
VCE = 1.20V, IC = 2.0mA
0.30
1.10
V
V(BR)CEO
Collector-Emitter Breakdown Voltage (Note 6) (Note 7)
Electrical Characteristics: NPN Pre-biased Transistor – Q2 (@TA = +25°C, unless otherwise specified.)
Min
Typ
Max
Unit
V(BR)CBO
Symbol
Collector-Base Breakdown Voltage
Characteristic
IC = 50μA, IE = 0
Test Condition
30
—
—
V
V(BR)CEO
Collector-Emitter Breakdown Voltage (Note 6)
IC = 1mA, IB = 0
30
—
—
V
V(BR)EBO
Emitter-Base Breakdown Voltage (Note 7)
IE = 50μA, IC = 0
5.0
—
—
V
ICBO
Collector Cutoff Current
VCB = 30V, IE = 0
—
—
0.5
µA
IEBO
Emitter Cutoff Current (Note 7)
VEB = 4V, IC = 0
—
—
0.5
µA
VCE(SAT)
Collector-Emitter Saturation Voltage (Note 6)
IC = 10mA, IB = 1mA
—
—
0.3
V
VBE(ON)
Base-Emitter Turn-On Voltage
VCE = 5.0V, IC = 2.0mA
0.30
1.10
V
hFE
DC Current Gain (Note 6)
VCE = 5V, IC = 150mA
100
—
—
—
R1
Input Resistance
7
10
13
kΩ
—
*Characteristics of transistor only.
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design and tested only at the wafer level for single die. These parameters cannot be tested at the finished good level due to test
conditions changed after packaging multi-dies to form an application circuit.
AL5802LP4
Document number: DS37441 Rev. 4 - 2
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Thermal Characteristics
100
Vbias = 24V
I OU T (mA)
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AL5802LP4
Vout = 1.4V
50
Vout = 5.4V
VOUT (V)
Figure 3 Output Current vs. VOUT
0
1
10
REXT ( Ω)
100
Figure 4 Output Current vs. R
VOUT (V)
Figure 5 Output Current vs. VOUT
AL5802LP4
Document number: DS37441 Rev. 4 - 2
EXT
VOUT (V)
Figure 6 Output Current vs. VOUT
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AL5802LP4
Typical Performance Characteristics (Continued)
VBIAS (V)
Figure 8 Output Current vs. VBIAS
VOUT (V)
Figure 7 Output Current vs. VOUT
VBIAS (V)
Figure 10 Output Current vs. VBIAS
VBIAS (V)
Figure 9 Output Current vs. VBIAS
VBIAS (V)
Figure 11 Output Current vs. VBIAS
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AL5802LP4
Application Information
The AL5802LP4 is designed for driving low current LEDs with typical LED currents of 10mA to 100mA. It provides a cost effective way of driving
low current LEDs compared with more complex switching regulator solutions. Furthermore, it reduces the PCB board area of the solution as there
is no need for external components like inductors, capacitors and switching diodes.
Figure 12 shows a typical application circuit diagram for driving an LED or string of LEDs. The NPN transistor Q1 measures the LED current by
sensing the voltage across an external resistor REXT. Q1 uses its VBE as reference to set the voltage across REXT and controls the base current into
Q2. Q2 operates in linear mode to regulate the LED current. The LED current is:
ILED = VBE(Q1) / REXT
From this, for any required LED current the necessary external resistor REXT can be calculated from:
REXT = VBE(Q1) / ILED
Two or more AL5802LP4 can be connected in parallel to construct higher current LED strings as shown in Figure 13.
Consideration of the expected linear mode power dissipation must be factored into the design, with respect to the AL5802LP4's thermal resistance.
The maximum voltage across the device can be calculated by taking the maximum supply voltage less the voltage across the LED string.
VCE(Q2) = VCC – VLED – VBE(Q1)
PD = VCE(Q2) * ILED + ( VCC – VBE(Q2) – VBE(Q1))2 / R1
As the output current of AL5802LP4 increases, it is necessary to provide appropriate thermal relief to the device. The power dissipation supported
by the device is dependent upon the PCB board material, the copper area and the ambient temperature. The maximum dissipation the device can
handle is given by:
PD = (TJ(MAX) - TA) /RθJA
Figure 12 Typical Application Circuit for
Linear Mode Current Sink LED Driver
AL5802LP4
Document number: DS37441 Rev. 4 - 2
Figure 13 Application Circuit for Increasing LED Current
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AL5802LP4
PWM dimming can be achieved by driving the EN Pin. An external open-collector NPN transistor or open-drain N-Channel MOSFET can be used
to drive the EN Pin as shown in Figure 14. Dimming is achieved by turning the LEDs ON and OFF for a portion of a single cycle. The PWM signal
can be provided by a micro-controller or analog circuitry. Figure 16 is a typical response of LED current vs. PWM duty cycle on the EN Pin.
-or-
Figure 14 Application Circuits for LED Driver with PWM Dimming Functionality
60
50
LED CURRENT (mA)
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Application Information (Continued)
40
30
20
10
0
0
20
40
60
80
PWM DUTY CYCLE (%)
100
Figure 15 Typical LED Current Response vs. PWM Duty Cycle for
REXT = 13Ω at 400Hz PWM Frequency
To remove the potential of incorrect connection of the power supply damaging the lamp’s LEDs, many systems use some form of reverse polarity
protection.
One solution for reverse input polarity protection is to simply use a diode with a low V F in-line with the driver/LED combination. The low VF
increases the available voltage to the LED stack and dissipates less power. A circuit example is presented in Figure 16 using Diodes Incorporated’s
SBR (Super Barrier Rectifier) technology. An SDM10U45LP (0.1A/45V) is shown, providing exceptionally low VF for its package size of 1mm x
0.6mm, equivalent to an 0402 chip style package. Other reverse voltage ratings are available on Diodes’ website, such as the SBR02U100LP
(0.2A/100V) or SBR0220LP (0.2A/20V).
Automotive applications commonly use this method for reverse battery protection.
AL5802LP4
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Application Information (cont.)
A second approach, shown in Figure 17, improves upon the method shown in Figure 16. Whereas the method in Figure 16 protects the light
engine, it will not function until the problem is diagnosed and corrected.
The method shown in Figure 17 not only provides reverse polarity protection, it also corrects the reversed polarity, allowing the light engine to
function.
The BAS40BRW incorporates four low VF, Schottky diodes into a single package and allows more voltage to be available for the LED stack and
dissipates less power than standard rectifier bridges.
SDM10U45LP
VS
AL5802LP4
RS
Figure 17 Application Circuit for LED Driver with
Assured Operation Regardless of Polarity
Figure 16 Application Circuit for LED Driver
with Reverse Polarity Protection
Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
X2-DFN1310-6
A
A3
A1
Seating Plane
D
D2
z
R0.
f
f
b
150
E2
E(Pin #1 ID)
d
L
f
f
AL5802LP4
Document number: DS37441 Rev. 4 - 2
d
e
z
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X2-DFN1310-6
Dim Min Max Typ
A
0.40


A1
0
0.05 0.02
A3
0.13


b
0.10 0.20 0.15
D
1.25 1.38 1.30
d

 0.25
D2
0.30 0.50 0.40
E
0.95 1.075 1.00
e

 0.35
E2
0.30 0.50 0.40
f
0.10


L
0.20 0.30 0.25
Z

 0.05
All Dimensions in mm
February 2016
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AL5802LP4
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Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
X2-DFN1310-6
G2
X2
Dimensions
G1
G2
G3
X1
X2
Y1
Y2
a
b
Y2
G1
b
Y1
G3
a
X1
Value (in mm)
0.16
0.17
0.15
0.52
0.20
0.52
0.375
0.09
0.06
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