AL5802LP4 INFORMATION ADVANCE NEW PRODUCT INFORMATION ADVANCED 30V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER Description Pin Assignments The AL5802LP4 combines a high-gain NPN transistor with a pre-biased NPN transistor to make a simple small footprint LED driver. The LED current is set by an external resistor connected from REXT Pin (2) to GND Pin (1). The internal high-gain transistor develops approximately 0.6V across the external resistor. The AL5802LP4’s open-collector output can operate from 0.8V to 30V making it suitable for industry standard 5V to 24V power supplies without additional components. PWM dimming of the LED current can be achieved by either driving the BIAS Pin (4) with a low impedance voltage source, or driving the EN Pin (6) with an external open-collector NPN transistor or open-drain N-Channel MOSFET. The AL5802LP4 is available in a X2-DFN1310-6 package and is ideal for driving up to 120mA current. Internal Schematic (Top View) Mechanical Data Case: X2-DFN1310-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: NiPdAu (Lead-Free) Plating. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0013 grams Features Applications Reference Voltage VREXT = 0.65V -40 to +125°C Temperature Range 0.8V to 30V Open-Collector Output Negative Temperature Co-Efficient – Automatically Reduces the LED Current at High Temperatures Low Thermal Impedance, Small Footprint X2-DFN1310-6 Package with Exposed Pads Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) (Bottom View) Linear LED Driver LED Signs Offline LED Luminaries Ordering Information (Note 8) Note: Device Qualification Packaging AL5802LP4 Commercial X2-DFN1310-6 Tape and Reel Quantity Part Number Suffix 3,000/Tape & Reel -7 8. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 802 = Product Type Marking Code Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. AL5802LP4 Document number: DS37441 Rev. 4 - 2 1 of 10 www.diodes.com February 2016 © Diodes Incorporated AL5802LP4 INFORMATION ADVANCE NEW PRODUCT INFORMATION ADVANCED Typical Application Circuit Pin Descriptions Pin Number 1 Name GND 2 REXT 3 4 5 OUT BIAS N/C 6 EN Function Ground Reference Point for Setting LED Current Current Sense Pin LED current sensing resistor should be connected from here to GND Open-Collector LED Driver Output Biases the Open Collector Output Transistor No Connection Enable Pin for PWM Dimming Provides access to the base of Q2 and collector of Q1 Functional Block Diagram Figure 1 Block Diagram AL5802LP4 Document number: DS37441 Rev. 4 - 2 2 of 10 www.diodes.com February 2016 © Diodes Incorporated AL5802LP4 INFORMATION ADVANCE NEW PRODUCT INFORMATION ADVANCED Absolute Maximum Ratings Symbol Values Unit VOUT Output Voltage Relative to GND 30 V VBIAS BIAS Voltage Relative to GND 30 V VFB LED Voltage Relative to GND 6 V VEN EN Voltage Relative to GND 6 V REXT Voltage Relative to GND 6 V 120 mA VREXT IOUT Characteristics Output Current TJ Operating Junction Temperature -40 to +150 °C TST Storage Temperature -55 to +150 °C These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure. Operation at the absolute maximum rating for extended periods may reduce device reliability. Package Thermal Data Characteristic Power Dissipation (Note 4) @TA = +25°C Thermal Resistance, Junction to Ambient Air (Note 4) @TA = +25°C Symbol Value Unit PD 0.36 W RθJA 347 °C/W Unit Recommended Operating Conditions Symbol VBIAS Supply Voltage Range Min 4.5 Max 30 VOUT OUT Voltage Range 0.8 30 ILED LED Pin Current (Note 5) 10 100 mA Operating Ambient Temperature Range -40 +125 °C TA Notes: Parameter V 4. Device mounted on FR-4 PCB, 2oz with minimum recommended pad layout. 5. Subject to ambient temperature, power dissipation and PCB. AL5802LP4 Document number: DS37441 Rev. 4 - 2 3 of 10 www.diodes.com February 2016 © Diodes Incorporated INFORMATION ADVANCE NEW PRODUCT INFORMATION ADVANCED AL5802LP4 Electrical Characteristics: NPN Transistor – Q1 (@TA = +25°C, unless otherwise specified.) Symbol Characteristic Min Typ Max Unit IC = 1.0mA, IB = 0 Test Condition 40 — — V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6.0 — — V ICEX Collector Cutoff Current (Note 7) VCE = 30V, VEB(OFF) = 3.0V — — 50 nA IBL Base Cutoff Current (Note 7) VCE = 30V, VEB(OFF) = 3.0V — — 50 nA hFE DC Current Gain IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V 70 100 — — — 300 — VCE(SAT) Collector-Emitter Saturation Voltage (Note 6) IC = 10mA, IB = 1.0mA — — 0.20 V VBE(SAT) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 0.65 — 0.85 V VBE(ON) Base-Emitter Turn-On Voltage VCE = 1.20V, IC = 2.0mA 0.30 1.10 V V(BR)CEO Collector-Emitter Breakdown Voltage (Note 6) (Note 7) Electrical Characteristics: NPN Pre-biased Transistor – Q2 (@TA = +25°C, unless otherwise specified.) Min Typ Max Unit V(BR)CBO Symbol Collector-Base Breakdown Voltage Characteristic IC = 50μA, IE = 0 Test Condition 30 — — V V(BR)CEO Collector-Emitter Breakdown Voltage (Note 6) IC = 1mA, IB = 0 30 — — V V(BR)EBO Emitter-Base Breakdown Voltage (Note 7) IE = 50μA, IC = 0 5.0 — — V ICBO Collector Cutoff Current VCB = 30V, IE = 0 — — 0.5 µA IEBO Emitter Cutoff Current (Note 7) VEB = 4V, IC = 0 — — 0.5 µA VCE(SAT) Collector-Emitter Saturation Voltage (Note 6) IC = 10mA, IB = 1mA — — 0.3 V VBE(ON) Base-Emitter Turn-On Voltage VCE = 5.0V, IC = 2.0mA 0.30 1.10 V hFE DC Current Gain (Note 6) VCE = 5V, IC = 150mA 100 — — — R1 Input Resistance 7 10 13 kΩ — *Characteristics of transistor only. Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design and tested only at the wafer level for single die. These parameters cannot be tested at the finished good level due to test conditions changed after packaging multi-dies to form an application circuit. AL5802LP4 Document number: DS37441 Rev. 4 - 2 4 of 10 www.diodes.com February 2016 © Diodes Incorporated Thermal Characteristics 100 Vbias = 24V I OU T (mA) INFORMATION ADVANCE NEW PRODUCT INFORMATION ADVANCED AL5802LP4 Vout = 1.4V 50 Vout = 5.4V VOUT (V) Figure 3 Output Current vs. VOUT 0 1 10 REXT ( Ω) 100 Figure 4 Output Current vs. R VOUT (V) Figure 5 Output Current vs. VOUT AL5802LP4 Document number: DS37441 Rev. 4 - 2 EXT VOUT (V) Figure 6 Output Current vs. VOUT 5 of 10 www.diodes.com February 2016 © Diodes Incorporated INFORMATION ADVANCE NEW PRODUCT INFORMATION ADVANCED AL5802LP4 Typical Performance Characteristics (Continued) VBIAS (V) Figure 8 Output Current vs. VBIAS VOUT (V) Figure 7 Output Current vs. VOUT VBIAS (V) Figure 10 Output Current vs. VBIAS VBIAS (V) Figure 9 Output Current vs. VBIAS VBIAS (V) Figure 11 Output Current vs. VBIAS AL5802LP4 Document number: DS37441 Rev. 4 - 2 6 of 10 www.diodes.com February 2016 © Diodes Incorporated INFORMATION ADVANCE NEW PRODUCT INFORMATION ADVANCED AL5802LP4 Application Information The AL5802LP4 is designed for driving low current LEDs with typical LED currents of 10mA to 100mA. It provides a cost effective way of driving low current LEDs compared with more complex switching regulator solutions. Furthermore, it reduces the PCB board area of the solution as there is no need for external components like inductors, capacitors and switching diodes. Figure 12 shows a typical application circuit diagram for driving an LED or string of LEDs. The NPN transistor Q1 measures the LED current by sensing the voltage across an external resistor REXT. Q1 uses its VBE as reference to set the voltage across REXT and controls the base current into Q2. Q2 operates in linear mode to regulate the LED current. The LED current is: ILED = VBE(Q1) / REXT From this, for any required LED current the necessary external resistor REXT can be calculated from: REXT = VBE(Q1) / ILED Two or more AL5802LP4 can be connected in parallel to construct higher current LED strings as shown in Figure 13. Consideration of the expected linear mode power dissipation must be factored into the design, with respect to the AL5802LP4's thermal resistance. The maximum voltage across the device can be calculated by taking the maximum supply voltage less the voltage across the LED string. VCE(Q2) = VCC – VLED – VBE(Q1) PD = VCE(Q2) * ILED + ( VCC – VBE(Q2) – VBE(Q1))2 / R1 As the output current of AL5802LP4 increases, it is necessary to provide appropriate thermal relief to the device. The power dissipation supported by the device is dependent upon the PCB board material, the copper area and the ambient temperature. The maximum dissipation the device can handle is given by: PD = (TJ(MAX) - TA) /RθJA Figure 12 Typical Application Circuit for Linear Mode Current Sink LED Driver AL5802LP4 Document number: DS37441 Rev. 4 - 2 Figure 13 Application Circuit for Increasing LED Current 7 of 10 www.diodes.com February 2016 © Diodes Incorporated AL5802LP4 PWM dimming can be achieved by driving the EN Pin. An external open-collector NPN transistor or open-drain N-Channel MOSFET can be used to drive the EN Pin as shown in Figure 14. Dimming is achieved by turning the LEDs ON and OFF for a portion of a single cycle. The PWM signal can be provided by a micro-controller or analog circuitry. Figure 16 is a typical response of LED current vs. PWM duty cycle on the EN Pin. -or- Figure 14 Application Circuits for LED Driver with PWM Dimming Functionality 60 50 LED CURRENT (mA) INFORMATION ADVANCE NEW PRODUCT INFORMATION ADVANCED Application Information (Continued) 40 30 20 10 0 0 20 40 60 80 PWM DUTY CYCLE (%) 100 Figure 15 Typical LED Current Response vs. PWM Duty Cycle for REXT = 13Ω at 400Hz PWM Frequency To remove the potential of incorrect connection of the power supply damaging the lamp’s LEDs, many systems use some form of reverse polarity protection. One solution for reverse input polarity protection is to simply use a diode with a low V F in-line with the driver/LED combination. The low VF increases the available voltage to the LED stack and dissipates less power. A circuit example is presented in Figure 16 using Diodes Incorporated’s SBR (Super Barrier Rectifier) technology. An SDM10U45LP (0.1A/45V) is shown, providing exceptionally low VF for its package size of 1mm x 0.6mm, equivalent to an 0402 chip style package. Other reverse voltage ratings are available on Diodes’ website, such as the SBR02U100LP (0.2A/100V) or SBR0220LP (0.2A/20V). Automotive applications commonly use this method for reverse battery protection. AL5802LP4 Document number: DS37441 Rev. 4 - 2 8 of 10 www.diodes.com February 2016 © Diodes Incorporated AL5802LP4 INFORMATION ADVANCE NEW PRODUCT INFORMATION ADVANCED Application Information (cont.) A second approach, shown in Figure 17, improves upon the method shown in Figure 16. Whereas the method in Figure 16 protects the light engine, it will not function until the problem is diagnosed and corrected. The method shown in Figure 17 not only provides reverse polarity protection, it also corrects the reversed polarity, allowing the light engine to function. The BAS40BRW incorporates four low VF, Schottky diodes into a single package and allows more voltage to be available for the LED stack and dissipates less power than standard rectifier bridges. SDM10U45LP VS AL5802LP4 RS Figure 17 Application Circuit for LED Driver with Assured Operation Regardless of Polarity Figure 16 Application Circuit for LED Driver with Reverse Polarity Protection Package Outline Dimensions Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. X2-DFN1310-6 A A3 A1 Seating Plane D D2 z R0. f f b 150 E2 E(Pin #1 ID) d L f f AL5802LP4 Document number: DS37441 Rev. 4 - 2 d e z 9 of 10 www.diodes.com X2-DFN1310-6 Dim Min Max Typ A 0.40 A1 0 0.05 0.02 A3 0.13 b 0.10 0.20 0.15 D 1.25 1.38 1.30 d 0.25 D2 0.30 0.50 0.40 E 0.95 1.075 1.00 e 0.35 E2 0.30 0.50 0.40 f 0.10 L 0.20 0.30 0.25 Z 0.05 All Dimensions in mm February 2016 © Diodes Incorporated AL5802LP4 INFORMATION ADVANCE NEW PRODUCT INFORMATION ADVANCED Suggested Pad Layout Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. X2-DFN1310-6 G2 X2 Dimensions G1 G2 G3 X1 X2 Y1 Y2 a b Y2 G1 b Y1 G3 a X1 Value (in mm) 0.16 0.17 0.15 0.52 0.20 0.52 0.375 0.09 0.06 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2016, Diodes Incorporated www.diodes.com AL5802LP4 Document number: DS37441 Rev. 4 - 2 10 of 10 www.diodes.com February 2016 © Diodes Incorporated