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SPT02-236DDB
Automation sensor transient and overvoltage protection
Datasheet − production data
Applications
• Factory automation sensor application
• Proximity sensor interface protection
• Transient and surge voltage protection
• Compliant with sensor standard, EN 60947-5-2
µQFN-2L
SPT02-236DDB
Description
Features
• 6 V to 36 V supply voltage range
The SPT02 is specifically designed for the
protection of 24 V proximity sensors. It
implements the reverse polarity and the
overvoltage protection of the sensor power supply
and the power switch overvoltage protection.
• Minimum breakdown voltage VBR: 38 V
It provides a very compact and flexible solution.
• 8/20 µs 2 A maximum clamping voltage: 46 V
Thanks to high performance ST technology, the
SPT02 protects the proximity sensor to the
highest level compliant with IEC 61000-4-2, IEC
61000-4-4 and IEC 61000-4-5 standards.
• Double diode array for switch protection and
reverse blocking protection
• Blocking diode drop forward voltage VF:
1.1 V at 300 mA
• Blocking diode maximum 10 ms square pulse
current IFSM: 3 A
• Ambient temperature: -40 °C to +100 °C
Figure 1. Functional diagram (top view)
• µQFN 2L 0.8 mm flat package
K
D1
Complies with following standards
D2
A1
A2
• Voltage surge: IEC 61000-4-5, R CC = 500 Ω,
±1 kV
• Electrostatic discharge, IEC 61000-4-2:
– ±8 kV contact discharge
– ±15 kV air discharge
Figure 2. Bottom view
• Electrical transient immunity: IEC 61000-4-4:
±2 kV
Benefits
• Compliant for interface with logic input type 1,
2 and 3 IEC 61131-2 standard
• Highly compact with integrated power solution
in SMD version
March 2014
This is information on a product in full production.
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Basic application
1
SPT02-236DDB
Basic application
Figure 3. STP02 configuration
Sensor
Process control
VCC
Detector
LS
P.supply
D2
D1
GND
HS
Load
Load
Detector
LS
D2
VCC
D1
HS
GND
Sensor
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P.supply
Process control
SPT02-236DDB
2
Characteristics
Characteristics
Table 1. Pinout connections(1)
Symbol
Description
K
D1 power bus protection diode cathode and D2 reverse blocking protection cathode
A1
D1 power bus protection diode anode
A2
D2 reverse blocking protection anode
1. See Figure 1
Table 2. Absolute ratings (Tamb = 25 °C)
Symbol
Diode
Parameter
Value
Unit
VPP
All
30
kV
30
kV
VPP
All
Peak Surge Voltage, IEC 61000-4-5, per diode,
RCC = 500 Ω, (1)
1
kV
PPP
All
Peak pulse current, TJ = Tamb = 85 °C,
tP = 8/20 µs
1400
W
IPP
All
Peak pulse power dissipation, TJ = Tamb = 85 °C,
tP = 8/20 µs
25
A
IFSM
All
Maximum forward surge current, tP = 10 ms square
3
A
EAR
D1
Maximum repetitive avalanche energy
L= 1 H, IRAS= 0.3A, RS = 100 Ω, VCC = 30 V,
Tamb = 85 °C, (1)
66
mJ
TJ
All
Storage junction temperature range
- 40 to 150
°C
ESD protection, IEC 61000-4-2, per diode, in air (1)
ESD protection, IEC 61000-4-2, per diode, in contact
(1)
1. See system oriented test circuits in Figure 5 (ESD) and Figure 4 (Surge as also described in
IEC 60947-5-2).
Table 3. Recommended operating conditions
Symbol
VCC
IF
Tamb
TJ
Parameter
Value
Unit
Operating power bus supply voltage
-30 to 35
V
Pulse repetitive voltage tP = 0.5 s, RCC = 500 Ω
-30 to 37
V
300
mA
-40 to 100
°C
-40 to 150
°C
D2 forward peak current Tj = 150 °C duty cycle = 50%
Operating ambient temperature range
Operating junction temperature
range(1)
1. Extended from DC operating at 150 °C up to peak repetitive value during the inductive load
demagnetization
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Characteristics
SPT02-236DDB
Table 4. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-a)
SMD thermal resistance junction to ambient, per diode
FR4 board, copper thickness = 35 µm, recommended footprint
230
°C/W
Zth(j-a)
SMD thermal transient impedance junction to ambient, per diode
tp = 15 ms, Tamb = 85 °C, recommended footprint
6.5
°C/W
Table 5. Electrical characteristics (TJ = 25 °C, unless otherwise specified)
Symbol Diode
VRM
ALL
IRM
ALL
VBR
ALL
VCL
ALL
RD
ALL
Name
Reverse stand off voltage
Leakage reverse current
Reverse breakdown voltage
Peak clamping voltage
Value
Unit
IR = 200 nA
MIN
33
IR = 1 µA
MIN
36
VRM = 36 V(1)
MAX
1
µA
VRM = 36 V,
TJ = 150 °C
MAX
5
µA
MIN
38
V
TYP
41.4
V
MAX
46
V
TYP
44
V
TYP
0.5
Ω
MAX
17
10-4 /°C
IR = 1 mA
IPP = 2 A,
tP = 8 /20 µs
8/20µs dynamic resistance
sensitivity(2)
V
αT
ALL
VBR Temperature
VCL
D1
Peak clamping voltage
IR = 0.3 A, L = 1 H,
VCC = 30 V
MAX
46
V
VF
D2
Forward drop voltage
IF = 300 mA
MAX
1.1
V
1. Voltage applied at the nodes of each diode
2. VBR @ TJ = VBR @25 °C x (1+ αT x (TJ - 25))
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Test conditions
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3
System related electromagnetic compatibility ratings
System related electromagnetic compatibility ratings
Figure 4. Surge Voltage test circuit according to IEC 61000-4-5 with 500 Ω serial
resistor
C = 18 µF
R=2Ω
High voltage
surge generator
Diode
under test
PE
Figure 5. ESD test circuit according to IE 61000-4-2
R = 300 Ω
ESD voltage
source
Diode
under test
C = 150 pF
ESD generator
Figure 6. EOS test circuit according to IE 61000-4-5
Sensor
C = 18 µF
R=2Ω
Detector
LS
D2
D1
HS
4
High voltage
surge generator
PE
Evaluation of the clamping voltage
VBR (TJ) = VBR (25) x (1+ αT (TJ – 25))
VCL MAX (8/20 µs) = VBR MAX + RD x IPP
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Application considerations
SPT02-236DDB
5
Application considerations
5.1
Demagnetization of an inductive load driven by the switch
protection diode.
The turn off energy EOFF that could be dissipated in the D1 diode is calculated as shown in
AN587 and AN1351 application notes:
EOFF = VBR x L / / (RS)² x [VCC + (VCC - VBR) x ln (VBR / (VBR - VCC))]
tOFF = L x ln (VBR / (VBR - VCC)) / RS
POFF = EOFF / tOFF
With L = 1 H; I = 0.3 A; VBR = 39 V; VCC = 30 V, R S = 100 Ω the stress withstood by D1
becomes:
EOFF = 65 mJ; tOFF = 15 ms; POFF = 4.3 W
In a single pulse mode operation, the junction temperature can be fairly estimated:
TJ = Tamb + [ZTH (tOFF) x POFF]
In a repetitive operation with an F repetitive rate,
PAV = EOFF x F
TJ_AV = Tamb + PAV x RTH_JA
And during the demagnetization tOFF, TJ_PK < TJ_AV + POFF x ZTH (tOFF)
ZTH is the transient thermal impedance of each diode for a pulse having a duration
tOFF.
Figure 7. Electrical diagram for inductive load demagnetization
D
D2
VBR
Switch
D1
VCC
RS
Load
5.2
L
Life time considerations
Life time of the product is calculated to exceed 10 years. The key parameters to
consider are the ambient temperature (Tamb < 100 °C), the power supply voltage
(VCC < 30 V), and the current in the reverse blocking diode (IF = 0.1 A switching at
0.5 Hz with 50% duty cycle, the stand-by current being less than 1.5 mA).
For higher current or higher switching frequency operation, the life time should be
calculated considering the peak and average junction temperature.
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SPT02-236DDB
6
Package information
Package information
•
Epoxy meets UL94,V0
•
Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 8. µQFN-2L dimensions (definitions)
D2
b
L
E2
e
A
A1
D
E
Table 6. µQFN-2L dimensions (values)
Dimensions
Ref.
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
0.70
0.75
0.80
0.027
0.029
0.031
A1
0.00
0.02
0.05
0.00
0.001
0.002
b
0.25
0.30
0.35
0.010
0.011
0.014
D
-
3.30
-
-
0.13
-
D2
1.85
2.00
2.10
0.073
0.079
0.082
E
-
1.50
-
-
0.06
-
E2
0.90
1.05
1.16
0.035
0.041
0.046
e
-
2.8
-
-
0.110
-
L
0.97
1.07
1.18
0.038
0.042
0.046
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Package information
SPT02-236DDB
Figure 9. Footprint (dimensions in mm)
2.00
0.50
0.50
1.07
1.05
0.25
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SPT02-236DDB
Recommendation on PCB assembly
7
Recommendation on PCB assembly
7.1
Stencil opening design
1.
General recommendation on stencil opening design
a)
Stencil opening dimensions: L (Length), W (Width), T (Thickness).
Figure 10. Stencil opening dimensions
L
T
b)
W
General design rule
Stencil thickness (T) = 75 ~ 125 µm
W
Aspect Ratio = ----- ≥ 1,5
T
L×W
Aspect Area = ---------------------------- ≥ 0,66
2T ( L + W )
2.
7.2
Reference design
a)
Stencil opening thickness: 100 µm
b)
Stencil opening for central exposed pad: Opening to footprint ratio is 50%.
c)
Stencil opening for leads: Opening to footprint ratio is 90%.
Solder paste
1.
Halide-free flux qualification ROL0 according to ANSI/J-STD-004.
2.
“No clean” solder paste is recommended.
3.
Offers a high tack force to resist component movement during high speed.
4.
Solder paste with fine particles: powder particle size is 20-45 µm.
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Recommendation on PCB assembly
7.3
7.4
7.5
SPT02-236DDB
Placement
1.
Manual positioning is not recommended.
2.
It is recommended to use the lead recognition capabilities of the placement system, not
the outline centering.
3.
Standard tolerance of ± 0.05 mm is recommended.
4.
3.5 N placement force is recommended. Too much placement force can lead to
squeezed out solder paste and cause solder joints to short. Too low placement force
can lead to insufficient contact between package and solder paste that could cause
open solder joints or badly centered packages.
5.
To improve the package placement accuracy, a bottom side optical control should be
performed with a high resolution tool.
6.
For assembly, a perfect supporting of the PCB (all the more on flexible PCB) is
recommended during solder paste printing, pick and place and reflow soldering by
using optimized tools.
PCB design preference
1.
To control the solder paste amount, the closed via is recommended instead of open
vias.
2.
The position of tracks and open vias in the solder area should be well balanced. The
symmetrical layout is recommended, in case any tilt phenomena caused by
asymmetrical solder paste amount due to the solder flow away.
Reflow profile
Figure 11. ST ECOPACK® recommended soldering reflow profile for PCB mounting
240-245 °C
Temperature (°C)
250
-2 °C/s
2 - 3 °C/s
60 sec
(90 max)
200
-3 °C/s
150
-6 °C/s
100
0.9 °C/s
50
Time (s)
0
Note:
30
60
90
120
150
210
240
270
300
Minimize air convection currents in the reflow oven to avoid component movement.
Compliant with J-STD-020D soldering profile
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SPT02-236DDB
8
Ordering information
Ordering information
Figure 12. Ordering information scheme
SPT
02 - 2
36 DDB
Sensor protection termination
Generation
02 = 2nde génération
Channels number
2 = 2 channels
Stand-off voltage
36 = 36 V
Package
D = Dual
D = 3 x 2 mm package size
B = 3 pins
Table 7. Ordering information
9
Order code
Marking
Package
Weight
Packing
SPT02-236DDB
S2
µQFN-2L with
exposed pad
15.55 mg
Tape and reel
Revision history
Table 8. Document revision history
Date
Revision
Changes
06-May-2013
1
First issue
21-Mar-2014
2
Updated Table 2, Table 6 and Figure 9.
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SPT02-236DDB
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