Low Capacitance SMD ESD Protection Diode CPDT-5V0USP-HF RoHS Device Halogen Free Features SOT-23 - IEC61000-4-2 Level 4 ESD protection - Surface mount package. 0.118(3.00) 0.110(2.80) - High component density. 3 0.055(1.40) Mechanical data 0.047(1.20) 1 - Case: SOT-23 Standard package, molded plastic. 2 0.079(2.00) 0.071(1.80) - Terminals: Solderable per MIL-STD-750, method 2026. 0.006(0.15) 0.003(0.08) - Mounting position: Any. 0.045(1.15) 0.100(2.55) 0.035(0.90) 0.089(2.25) - Weight: 0.0078 grams(approx.). Circuit diagram 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) 3 Dimensions in inches and (millimeter) 1 2 Maximum Rating (at TA=25°C unless otherwise noted) Parameter Conditions Symbol Value Unit Peak pulse power TP = 8/20us PPP 76 W Peak pulse current TP = 8/20us IPP 4 A ESD capability IEC 61000-4-2(air) IEC 61000-4-2(contact) ±15 ±8 kV Tj -55~+150 °C TSTG -55~+150 °C Operation temperature range Storage temperature range ESD Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Conditions Working peak reverse voltage Symbol Min Typ Max 5 VRWM Unit V Breakdown voltage IT = 1mA Reverse leakage current VRWM = 5V IR 0.5 uA Forward voltage IF = 10mA VF 1.2 V Clamping voltage IPP = 1A, TP = 8/20us IPP = 4A, TP = 8/20us VC 12 19 V VR = 0V, f = 1MHz (I/O pin to I/O pin) CJ 0.3 0.45 pF VR = 0V, f = 1MHz (I/O pin to GND pin) CJ 0.6 0.9 pF Junction capacitance VBR 6 V Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP049 Page 1 Comchip Technology CO., LTD. Low Capacitance SMD ESD Protection Diode RATING AND CHARACTERISTIC CURVES (CPDT-5V0USP-HF) Fig.1 - 8/20us Peak Pulse Current Wave Form Acc. IEC 61000-4-5 120% Ta=25°C Mounting on glass epoxy PCBs 100 Power Rating (%) Percentage of Ipp 120 Test Waveform parameters tf=8us td=20us Peak Valur Ipp 100% Fig.2 - Power Rating Derating Curve e-t 80% 60% 40% td= t Ipp/2 80 60 40 20 20% 0 0% 0 5 10 15 20 25 0 30 25 50 75 100 125 150 Ambient Temperature, ( °C ) Time, (us) Fig.4 - Clamping Voltage Vs. Peak Pulse Current Fig.3 - Forward Characteristic 20 10 Clamping Voltage, (V) Forward Current, (mA) 8/20us waveform 150°C 125°C 75°C 100°C 1 50°C 16 12 8 4 25°C 0 0 0.5 0.6 0.7 0.8 0.9 1.0 1 2 3 4 Peak Pulse Current, (A) Forward Voltage, ( V ) Capacitance Between Terminals, (pF) Fig.5 - Capacitance Between Terminals Characteristics 0.9 I/O Pin to GND I/O Pin to I/O Pin 0.6 0.3 0.0 0 1 2 3 4 5 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP049 Page 2 Comchip Technology CO., LTD. Low Capacitance SMD ESD Protection Diode Reel Taping Specification P1 XXX B F E d P0 12 o 0 D2 D1 D W1 SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 1.50 ± 0.10 178.00 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 / - 0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 / - 0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP049 Page 3 Comchip Technology CO., LTD. Low Capacitance SMD ESD Protection Diode Marking Code 3 Part Number Marking Code CPDT-5V0USP-HF E5UP E5UP 1 2 Suggested PAD Layout E SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 1.90 0.075 C 2.02 0.080 D 2.82 0.111 A C D B E 0.80 0.031 Standard Packaging REEL PACK Case Type SOT-23 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-JP049 Page 4 Comchip Technology CO., LTD.