CPDT-5V0USP-HF

Low Capacitance SMD ESD Protection Diode
CPDT-5V0USP-HF
RoHS Device
Halogen Free
Features
SOT-23
- IEC61000-4-2 Level 4 ESD protection
- Surface mount package.
0.118(3.00)
0.110(2.80)
- High component density.
3
0.055(1.40)
Mechanical data
0.047(1.20)
1
- Case: SOT-23 Standard package, molded
plastic.
2
0.079(2.00)
0.071(1.80)
- Terminals: Solderable per MIL-STD-750,
method 2026.
0.006(0.15)
0.003(0.08)
- Mounting position: Any.
0.045(1.15)
0.100(2.55)
0.035(0.90)
0.089(2.25)
- Weight: 0.0078 grams(approx.).
Circuit diagram
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.020(0.50)
0.012(0.30)
0.012(0.30)
3
Dimensions in inches and (millimeter)
1
2
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Value
Unit
Peak pulse power
TP = 8/20us
PPP
76
W
Peak pulse current
TP = 8/20us
IPP
4
A
ESD capability
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
±15
±8
kV
Tj
-55~+150
°C
TSTG
-55~+150
°C
Operation temperature range
Storage temperature range
ESD
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Working peak reverse voltage
Symbol
Min
Typ
Max
5
VRWM
Unit
V
Breakdown voltage
IT = 1mA
Reverse leakage current
VRWM = 5V
IR
0.5
uA
Forward voltage
IF = 10mA
VF
1.2
V
Clamping voltage
IPP = 1A, TP = 8/20us
IPP = 4A, TP = 8/20us
VC
12
19
V
VR = 0V, f = 1MHz (I/O pin to I/O pin)
CJ
0.3
0.45
pF
VR = 0V, f = 1MHz (I/O pin to GND pin)
CJ
0.6
0.9
pF
Junction capacitance
VBR
6
V
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
QW-JP049
Page 1
Comchip Technology CO., LTD.
Low Capacitance SMD ESD Protection Diode
RATING AND CHARACTERISTIC CURVES (CPDT-5V0USP-HF)
Fig.1 - 8/20us Peak Pulse Current
Wave Form Acc. IEC 61000-4-5
120%
Ta=25°C
Mounting on glass epoxy PCBs
100
Power Rating (%)
Percentage of Ipp
120
Test Waveform
parameters
tf=8us
td=20us
Peak Valur Ipp
100%
Fig.2 - Power Rating Derating Curve
e-t
80%
60%
40%
td= t Ipp/2
80
60
40
20
20%
0
0%
0
5
10
15
20
25
0
30
25
50
75
100
125
150
Ambient Temperature, ( °C )
Time, (us)
Fig.4 - Clamping Voltage Vs.
Peak Pulse Current
Fig.3 - Forward Characteristic
20
10
Clamping Voltage, (V)
Forward Current, (mA)
8/20us waveform
150°C
125°C
75°C
100°C
1
50°C
16
12
8
4
25°C
0
0
0.5
0.6
0.7
0.8
0.9
1.0
1
2
3
4
Peak Pulse Current, (A)
Forward Voltage, ( V )
Capacitance Between Terminals, (pF)
Fig.5 - Capacitance Between
Terminals Characteristics
0.9
I/O Pin to GND
I/O Pin to I/O Pin
0.6
0.3
0.0
0
1
2
3
4
5
Reverse Voltage, (V)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
QW-JP049
Page 2
Comchip Technology CO., LTD.
Low Capacitance SMD ESD Protection Diode
Reel Taping Specification
P1
XXX
B
F
E
d
P0
12
o
0
D2
D1 D
W1
SOT-23
SOT-23
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
1.50 ± 0.10
178.00 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004
0.059 ± 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 / - 0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004 0.315 + 0.012 / - 0.004
0.484 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
QW-JP049
Page 3
Comchip Technology CO., LTD.
Low Capacitance SMD ESD Protection Diode
Marking Code
3
Part Number
Marking Code
CPDT-5V0USP-HF
E5UP
E5UP
1
2
Suggested PAD Layout
E
SOT-23
SIZE
(mm)
(inch)
A
0.80
0.031
B
1.90
0.075
C
2.02
0.080
D
2.82
0.111
A
C
D
B
E
0.80
0.031
Standard Packaging
REEL PACK
Case Type
SOT-23
REEL
Reel Size
( pcs )
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
QW-JP049
Page 4
Comchip Technology CO., LTD.
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