BC807-25-G

General Purpose Transistors
BC807-16-G/25-G/40-G (PNP)
RoHS Device
Features
SOT-23
- Ldeally suited for automatic insertion.
- Epitaxial planar die construction.
- Complementary NPN type available (BC817).
0.119(3.00)
0.110(2.80)
3
Mechanical data
0.056(1.40)
- Case: SOT-23 Standard package, molded
plastic.
- Terminals: Tin plated, solderable per
MIL-STD-750, method 2026
- Mounting position: Any.
- Weight: 0.008 grams(approx.).
0.047(1.20)
1
0.044(1.10)
0.103(2.60)
0.035(0.90)
0.086(2.20)
0.006(0.15) max
A
0.020(0.50)
Symbol
Value
Unit
Collector-Base voltage
VCBO
-50
V
Collector-Emitter voltage
VCEO
-45
V
Emitter-Base voltage
VEBO
-5
V
Collector current-continuous
IC
-500
mA
Collector power dissipation
PC
300
mW
RθJA
417
°C/W
Junction temperature range
TJ
150
°C
Storage temperature range
TSTG
-55 to +150
°C
Thermal resistance form
junction to ambient
0.006(0.15)
0.002(0.05)
0.066(1.70)
Maximum Ratings (at T =25°C unless otherwise noted)
Parameter
2
0.083(2.10)
0.007(0.20) min
0.013(0.35)
Dimensions in inches and (millimeter)
Diagram:
Collector
3
1
Base
2
Emitter
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Parameter
Symbol
Conditions
Min
Max
Unit
Collector-Base breakdown voltage
VCBO
IC=-10μA, IE = 0
-50
V
Collector-Emitter breakdown voltage
VCEO
IC=-10mA, IB=0
-45
V
Emitter-Base breakdown voltage
VEBO
IE=-1μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-45V, IE=0
-0.1
μA
Collector cut-off current
ICEO
VCE=-40V, IB=0
-0.2
μA
Emitter cut-off current
IEBO
VEB=-4V, IC=0
-0.1
μA
hFE(1)
VCE=-1V, IC=-100mA
100
hFE(2)
VCE=-1V, IC=-500mA
40
Collector-Emitter saturation voltage
VCE(sat)
IC=-500mA, IB=-50mA
-0.7
V
Base-Emitter saturation voltage
VBE(sat)
IC=-500mA, IB=-50mA
-1.2
V
600
DC current gain
Transition frequency
fT
VCE=-5V, IC=-10mA, f=100MHz
MHz
100
Classification of hFE(1)
Rank
BC807-16-G
BC807-25-G
BC807-40-G
Range
100-250
160-400
250-600
Marking
5A
5B
5C
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
Page 1
QW-BTR27
Comchip Technology CO., LTD.
General Purpose Transistors
RATING AND CHARACTERISTIC CURVES (BC807-16-G/25-G/40-G)
Fig.2 - hFE — IC
Fig.1 - Static Characteristic
Collector Current, IC (mA)
-240
-500
COMMON
-500uA
EMITTER
-450uA
Ta=25°C
Ta=100°C
-400
IB=-1mA
IB=-0.9mA
-220
IB=-0.8mA
-180
IB=-0.7mA
IB=-0.6mA
-160
IB=-0.5mA
-120
IB=-0.4mA
IB=-0.3mA
-80
DC Current Gain, hFE
-280
-300
Ta=25°C
-200
IB=-0.2mA
-40
IB=-0.1mA
VCE=5V
0
0
-100
-2
-4
-6
-8
-10
-12
-14
-16
-1
Fig.4 - VCEsat — IC
-0.4
Collector-Emitter Saturation Voltage
, VCEsat (V)
-1.2
Base-Emitter Saturation Voltage
, VBEsat (V)
-500
Collector Current , IC (mA)
Fig.3 - VBEsat — IC
-1.0
-0.8
-0.6
-0.4
-0.3
-0.2
-0.1
0
-0.2
-0.1
-10
-1
-100
-500
-0.1
-10
-1
Collector Current, IC (mA)
-100
-500
Collector Current, IC (mA)
Fig.5 - IC — VBE
Fig.6 - Cob / Cib
-1000
— VCB / VEB
100
f=1MHZ
IE=0 / IC=0
Ta=25°C
Capacitance, C (pF)
Collector Current, IC (mA)
-100
-10
Collector-Emitter Voltage, VCE (V)
-100
Ta=100°C
-10
Ta=25°C
Cib
10
1
Cob
-1
VCE=1V
-0.1
-0.3
0.1
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
0
Base-Emitter Voltage, VBE (V)
Company reserves the right to improve product design , functions and reliability without notice.
-5
-10
Reverse Voltage, V (V)
REV:B
Page 2
QW-BTR27
Comchip Technology CO., LTD.
General Purpose Transistors
RATING AND CHARACTERISTIC CURVES (BC807-16-G/25-G/40-G)
Fig.7 - fT — IC
Fig.8 - PC — Ta
0.4
100
VCE=-5V
Ta=25°C
Collector Power Dissipation, PD (W)
Transition Frequency , fT (MHZ)
300
0.3
0.2
0.1
0
10
-1
-10
-100
0
25
Collector Current, (mA)
Company reserves the right to improve product design , functions and reliability without notice.
50
75
100
125
150
Ambient Temperature , Ta (°C)
REV:B
Page 3
QW-BTR27
Comchip Technology CO., LTD.
Comchip
General Purpose Transistors
SMD Diode Specialist
Reel Taping Specification
P1
W
B
F
E
d
P0
SOT-23
SOT-23
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
1.50 + 0.10
178 ± 2.0
54.40 ± 1.0
13.00 ± 1.0
(inch)
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004
0.059 + 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
9.50 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.158 ± 0.004
0.158 ± 0.004
0.079 ± 0.004 0.315 + 0.012 /–0.004 0.374 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
Page 4
QW-BTR27
Comchip Technology CO., LTD.
Comchip
General Purpose Transistors
SMD Diode Specialist
Marking Code
3
Part Number
Marking Code
BC807-16-G
5A
BC807-25-G
5B
BC807-40-G
5C
XX
1
2
xx = Product type marking code
Suggested PAD Layout
SOT-23
B
SIZE
(mm)
(inch)
A
0.80
0.031
B
0.80
0.031
C
1.90
0.075
D
2.02
0.080
E
2.82
0.111
A
D
E
C
Standard Packaging
Case Type
SOT-23
Qty Per Reel
Reel Size
(Pcs)
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
Page 5
QW-BTR27
Comchip Technology CO., LTD.
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