General Purpose Transistors BC807-16-G/25-G/40-G (PNP) RoHS Device Features SOT-23 - Ldeally suited for automatic insertion. - Epitaxial planar die construction. - Complementary NPN type available (BC817). 0.119(3.00) 0.110(2.80) 3 Mechanical data 0.056(1.40) - Case: SOT-23 Standard package, molded plastic. - Terminals: Tin plated, solderable per MIL-STD-750, method 2026 - Mounting position: Any. - Weight: 0.008 grams(approx.). 0.047(1.20) 1 0.044(1.10) 0.103(2.60) 0.035(0.90) 0.086(2.20) 0.006(0.15) max A 0.020(0.50) Symbol Value Unit Collector-Base voltage VCBO -50 V Collector-Emitter voltage VCEO -45 V Emitter-Base voltage VEBO -5 V Collector current-continuous IC -500 mA Collector power dissipation PC 300 mW RθJA 417 °C/W Junction temperature range TJ 150 °C Storage temperature range TSTG -55 to +150 °C Thermal resistance form junction to ambient 0.006(0.15) 0.002(0.05) 0.066(1.70) Maximum Ratings (at T =25°C unless otherwise noted) Parameter 2 0.083(2.10) 0.007(0.20) min 0.013(0.35) Dimensions in inches and (millimeter) Diagram: Collector 3 1 Base 2 Emitter Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Symbol Conditions Min Max Unit Collector-Base breakdown voltage VCBO IC=-10μA, IE = 0 -50 V Collector-Emitter breakdown voltage VCEO IC=-10mA, IB=0 -45 V Emitter-Base breakdown voltage VEBO IE=-1μA, IC=0 -5 V Collector cut-off current ICBO VCB=-45V, IE=0 -0.1 μA Collector cut-off current ICEO VCE=-40V, IB=0 -0.2 μA Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 μA hFE(1) VCE=-1V, IC=-100mA 100 hFE(2) VCE=-1V, IC=-500mA 40 Collector-Emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.7 V Base-Emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -1.2 V 600 DC current gain Transition frequency fT VCE=-5V, IC=-10mA, f=100MHz MHz 100 Classification of hFE(1) Rank BC807-16-G BC807-25-G BC807-40-G Range 100-250 160-400 250-600 Marking 5A 5B 5C Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 1 QW-BTR27 Comchip Technology CO., LTD. General Purpose Transistors RATING AND CHARACTERISTIC CURVES (BC807-16-G/25-G/40-G) Fig.2 - hFE — IC Fig.1 - Static Characteristic Collector Current, IC (mA) -240 -500 COMMON -500uA EMITTER -450uA Ta=25°C Ta=100°C -400 IB=-1mA IB=-0.9mA -220 IB=-0.8mA -180 IB=-0.7mA IB=-0.6mA -160 IB=-0.5mA -120 IB=-0.4mA IB=-0.3mA -80 DC Current Gain, hFE -280 -300 Ta=25°C -200 IB=-0.2mA -40 IB=-0.1mA VCE=5V 0 0 -100 -2 -4 -6 -8 -10 -12 -14 -16 -1 Fig.4 - VCEsat — IC -0.4 Collector-Emitter Saturation Voltage , VCEsat (V) -1.2 Base-Emitter Saturation Voltage , VBEsat (V) -500 Collector Current , IC (mA) Fig.3 - VBEsat — IC -1.0 -0.8 -0.6 -0.4 -0.3 -0.2 -0.1 0 -0.2 -0.1 -10 -1 -100 -500 -0.1 -10 -1 Collector Current, IC (mA) -100 -500 Collector Current, IC (mA) Fig.5 - IC — VBE Fig.6 - Cob / Cib -1000 — VCB / VEB 100 f=1MHZ IE=0 / IC=0 Ta=25°C Capacitance, C (pF) Collector Current, IC (mA) -100 -10 Collector-Emitter Voltage, VCE (V) -100 Ta=100°C -10 Ta=25°C Cib 10 1 Cob -1 VCE=1V -0.1 -0.3 0.1 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 Base-Emitter Voltage, VBE (V) Company reserves the right to improve product design , functions and reliability without notice. -5 -10 Reverse Voltage, V (V) REV:B Page 2 QW-BTR27 Comchip Technology CO., LTD. General Purpose Transistors RATING AND CHARACTERISTIC CURVES (BC807-16-G/25-G/40-G) Fig.7 - fT — IC Fig.8 - PC — Ta 0.4 100 VCE=-5V Ta=25°C Collector Power Dissipation, PD (W) Transition Frequency , fT (MHZ) 300 0.3 0.2 0.1 0 10 -1 -10 -100 0 25 Collector Current, (mA) Company reserves the right to improve product design , functions and reliability without notice. 50 75 100 125 150 Ambient Temperature , Ta (°C) REV:B Page 3 QW-BTR27 Comchip Technology CO., LTD. Comchip General Purpose Transistors SMD Diode Specialist Reel Taping Specification P1 W B F E d P0 SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 1.50 + 0.10 178 ± 2.0 54.40 ± 1.0 13.00 ± 1.0 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 + 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 9.50 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.002 0.158 ± 0.004 0.158 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.374 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 4 QW-BTR27 Comchip Technology CO., LTD. Comchip General Purpose Transistors SMD Diode Specialist Marking Code 3 Part Number Marking Code BC807-16-G 5A BC807-25-G 5B BC807-40-G 5C XX 1 2 xx = Product type marking code Suggested PAD Layout SOT-23 B SIZE (mm) (inch) A 0.80 0.031 B 0.80 0.031 C 1.90 0.075 D 2.02 0.080 E 2.82 0.111 A D E C Standard Packaging Case Type SOT-23 Qty Per Reel Reel Size (Pcs) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 5 QW-BTR27 Comchip Technology CO., LTD.