BC817-16-G

General Purpose Transistors
BC817-16-G/25-G/40-G (NPN)
RoHS Device
Features
SOT-23
- For general AF applications.
- High collector current.
- High current gain.
- Low collector-emitter saturation voltage.
0.119(3.00)
0.110(2.80)
3
0.056(1.40)
0.047(1.20)
1
Marking:
2
0.079(2.00)
0.071(1.80)
BC817-16-G: 6A
BC817-25-G: 6B
BC817-40-G: 6C
0.006(0.15)
0.003(0.08)
0.045(1.15)
0.100(2.55)
0.035(0.90)
0.089(2.25)
Diagram:
0.004(0.10) max
0.020(0.50)
0.020(0.50)
0.012(0.30)
0.012(0.30)
Collector
3
1
Base
Dimensions in inches and (millimeter)
2
Emitter
Maximum Ratings (at T =25°C unless otherwise noted)
A
Parameter
Symbol
Value
Unit
Collector-Base voltage
VCBO
50
V
Collector-Emitter voltage
VCEO
45
V
Emitter-Base voltage
VEBO
5
V
Collector current-continuous
IC
500
mA
Collector power dissipation
PC
300
mW
TJ, TSTG
-55 to +150
°C
Junction and storage temperature range
Company reserves the right to improve product design , functions and reliability without notice.
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General Purpose Transistors
Electrical Characteristics (at T =25°C unless otherwise noted)
A
Symbol
Parameter
Conditions
Typ
Min
Unit
Max
Collector-Base breakdown voltage
V(BR)CBO
IC = 10μA, IE = 0
50
V
Collector-Emitter breakdown voltage
V(BR)CEO
IC = 10mA, IB = 0
45
V
Emitter-Base breakdown voltage
V(BR)EBO
IE = 1μA, IC = 0
5
V
Collector cut-off current
ICBO
VCB = 45V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 4V, IC = 0
0.1
μA
hFE(1)
VCE = 1V, IC = 100mA
100
hFE(2)
VCE = 1V, IC = 500mA
40
600
DC current gain
Collector-Emitter saturation voltage
VCE(SAT)
IC = 500mA, IB = 50mA
0.7
V
Base-Emitter saturation voltage
VBE(SAT)
IC = 500mA, IB = 50mA
1.2
V
Base-Emitter voltage
VBE(ON)
VCE = 1V, IC = 500mA
1.2
V
Collector capacitance
Cob
Transition frequency
fT
VCB = 10V, f = 100MHz
pF
10
VCE = 5V, IC = 10mA, f = 100MHz
100
MHz
Classification of hFE(1)
Rank
BC817-16-G
BC817-25-G
BC817-40-G
100-250
160-400
250-600
Range
RATING AND CHARACTERISTIC CURVES (BC817-16-G/25-G/40-G)
Fig.2 - hFE — IC
Fig.1 - Static Characteristic
280
1mA
0.9mA
Ta=100°C
400
0.8mA
200
DC Current Gain, hFE
Collector Current, IC (mA)
240
500
COMMON
EMITTER
Ta = 25°C
0.7mA
0.6mA
160
0.5mA
120
0.4mA
0.3mA
80
300
Ta=25°C
200
0.2mA
40
VCE=1V
IB=0.1mA
0
100
0
2
4
6
8
10
12
14
16
1
Collector-Emitter Voltage, VCE (V)
10
100
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip Technology CO., LTD.
500
Collector Current, IC (mA)
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General Purpose Transistors
RATING AND CHARACTERISTIC CURVES (BC817-16-G/25-G/40-G)
Fig.4 - VCEsat — IC
Fig.3 - VBEsat — IC
0.4
β=10
β=10
Collector-Emitter Saturation Voltage
, VCEsat (V)
Base-Emitter Saturation Voltage
, VBEsat (V)
1.2
1.0
0.8
Ta=25°C
0.6
Ta=100°C
0.4
0.2
1
0.1
10
100
0.3
0.2
Ta=100°C
0.1
Ta=25°C
0
0.1
500
10
1
Collector Current, Ic (mA)
100
500
Collector Current, Ic (mA)
Fig.5 - IC — VBE
Fig.6 - Cob/Cib — VCB/VEB
500
100
f=1MHZ
IE=0 / IC=0
Capacitance, C (pF)
Collector Current, IC (mA)
Ta = 25°C
100
Ta=100°C
10
Ta=25°C
1
10
VCE=1V
0.1
0.3
1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
5
0
Base-Emitter Voltage, VBE (mV)
Reverse Voltage, V (V)
Fig.7 - fT — IC
Fig.8 - PC — Ta
300
0.40
Collector Power Dissipation, PC (W)
Transition Frequency, fT (MHZ)
10
100
VCE=5V
Ta = 25°C
10
0.20
0.10
0.00
10
1
0.30
60
0
Collector Current, IC (mA)
25
50
75
100
125
150
Ambient Temperature, Ta (°C)
Company reserves the right to improve product design , functions and reliability without notice.
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General Purpose Transistors
Reel Taping Specification
P1
F
E
d
P0
B
XX
12
o
0
D2
D1 D
W1
SOT-23
SOT-23
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
1.50 ± 0.10
178.00 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004
0.059 ± 0.004
7.008 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 / - 0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004 0.315 + 0.012 / - 0.004
0.484 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
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Comchip Technology CO., LTD.
General Purpose Transistors
Marking Code
3
Part Number
Marking Code
BC817-16-G
6A
BC817-25-G
6B
BC817-40-G
6C
XX
1
2
xx = Product type marking code
Suggested PAD Layout
B
SOT-23
SIZE
(mm)
(inch)
A
0.80
0.031
B
0.60
0.024
C
1.90
0.075
D
2.02
0.080
E
2.82
0.111
A
D
E
C
Standard Packaging
Case Type
SOT-23
Qty Per Reel
Reel Size
(Pcs)
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:B
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