BC871 TRANSISTOR (NPN) BC817-16 BC817-25 BC817-40 SOT-23 FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) z z z z z 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Value Units VCBO Symbol Collector-Base Voltage Parameter 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= 10μA, IE=0 50 V Collector-emitter breakdown voltage VCEO IC= 10mA, IB=0 45 V Emitter-base breakdown voltage VEBO IE= 1μA, IC=0 5 V Collector cut-off current ICBO VCB= 45 V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 μA hFE(1) VCE= 1V, IC= 100mA 100 hFE(2) VCE= 1V, IC= 500mA 40 DC current gain 600 Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.7 V Base-emitter saturation voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V Base-emitter voltage VBE VCE= 1 V, IC= 500mA 1.2 V Collecter capactiance Cob VCB=10V ,f=1MHz Transition frequency fT CLASSIFICATION OF VCE= 5 V, f=100MHz IC= 10mA 10 pF 100 MHz hFE (1) Rank BC817-16 BC817-25 BC817-40 Range 100-250 160-400 250-600 Marking 6A 6B 6C １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC871 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５