DIM400DDM17-A

6
3
DS5549-5 June 2009 (LN26749)
14
±0.2
±0.2
Replaces DS5549-4.1 June 2002
Dual Switch IGBT Module
11.5
DIM400DDM17-A000
FEATURES
±0.2
 ±0.2
10µs Short Circuit Withstand
18
6 x O7
KEY PARAMETERS
28
±0.5

High44
Thermal
±0.2 Cycling Capability

Non Punch
Silicon
±0.2
57 Through
VCES
VCE(sat) * (typ)
IC
(max)
IC(PK)
(max)

Isolated AlSiC Base with AlN Substrates
* Measured at the power busbars, not the auxiliary terminals

Lead Free construction
55.2 ± 0.3
±0.2
11.85
APPLICATIONS

High Reliability Inverters

Motor Controllers

Traction Drives
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM400DDM17-A000 is a dual switch 1700V, nchannel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus 10μs
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
1(E)
1700V
2.7
V
screwing
depth
400A
max 8
800A
2(C)
5(E)
12(C)
6(G)
11(G)
7(C)
10(E)
3(C)
4(E)
Fig. 1 Circuit configuration
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM400DDM17-A000
Note: When ordering, please use the complete part
number
Outline type code: D
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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1 /8
DIM400DDM17-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Test Conditions
VGE = 0V
Max.
Units
1700
V
±20
V
Continuous collector current
Tcase = 75°C
400
A
IC(PK)
Peak collector current
1ms, Tcase = 110°C
800
A
Pmax
Max. transistor power dissipation
Tcase = 25°C, Tj = 150°C
3470
W
30
kA s
4000
V
10
pC
Max
Units
36
°C/kW
80
°C/kW
8
°C/kW
Transistor
150
°C
Diode
125
°C
125
°C
Mounting – M6
5
Nm
Electrical connections – M4
2
Nm
Electrical connections – M8
10
Nm
2
It
2
Diode I t value
VR = 0, tp = 10ms, Tj = 125ºC
Visol
Isolation voltage – per module
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
QPD
Partial discharge – per module
IEC1287, V1 = 1800V, V2 = 1300V, 50Hz RMS
2
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
20mm
Clearance:
10mm
CTI (Comparative Tracking Index):
350
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-h)
Tj
Tstg
Parameter
Thermal resistance –
transistor (per switch)
Thermal resistance –
diode (per switch)
Thermal resistance –
case to heatsink (per module)
Min
Continuous dissipation junction to case
Continuous dissipation junction to case
Mounting torque 5Nm
(with mounting grease)
Typ.
Junction temperature
Storage temperature range
Screw torque
2/8
Test Conditions
-
-40
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400DDM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
Max
Units
VGE = 0V, VCE = VCES
1
mA
VGE = 0V, VCE = VCES, Tcase = 125°C
12
mA
Gate leakage current
VGE = ± 20V, VCE = 0V
2
μA
Gate threshold voltage
IC = 20mA, VGE = VCE
5.5
6.5
V
Collector-emitter
saturation voltage
VGE = 15V, IC = 400A
2.7
3.2
V
VGE = 15V, IC = 400A, Tj = 125°C
3.4
4.0
V
IF
Diode forward current
DC
400
A
IFM
Diode maximum forward current
tp = 1ms
800
A
VF
Diode forward voltage
ICES
Test Conditions
Min
Typ
Collector cut-off current
IGES
VGE(TH)
VCE(sat)
Parameter
†
4.5
IF = 400A
2.2
2.5
V
IF = 400A, Tj = 125°C
2.3
2.6
V
Cies
Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
30
nF
Qg
Gate charge
±15V
4.5
μC
Cres
Reverse transfer capacitance
VCE = 25V, VGE = 0V, f = 1MHz
-
nF
LM
Module inductance – per switch
-
20
nH
Internal transistor resistance –
per switch
-
270
μ
I1
1850
A
I2
1600
A
RINT
Tj = 125°C, VCC = 1000V
SCData
Short circuit current, ISC
tp ≤ 10μs, VGE ≤ 15V
*
VCE (max) = VCES – L x dI/dt
IEC 60747-9
Note:
†
Measured at the power busbars, not the auxiliary terminals
*
L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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3 /8
DIM400DDM17-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
td(off)
tf
Parameter
Test Conditions
Min
Turn-off delay time
IC = 400A
Fall time
Typ.
Max
Units
1150
ns
100
ns
VGE = ±15V
EOFF
Turn-off energy loss
VCE = 900V
120
mJ
td(on)
Turn-on delay time
RG(ON) = 4.7
250
ns
250
ns
150
mJ
100
μC
tr
RG(OFF) = 4.7
Rise time
LS ~ 100nH
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse recovery current
VCE = 900V
230
A
Erec
Diode reverse recovery energy
dIF/dt = 3000A/μs
70
mJ
IF = 400A
Tcase = 125°C unless stated otherwise
Parameter
Symbol
td(off)
tf
Test Conditions
Turn-off delay time
IC = 400A
Fall time
Min
Typ.
Max
Units
1400
ns
130
ns
VGE = ±15V
EOFF
Turn-off energy loss
VCE = 900V
180
mJ
td(on)
Turn-on delay time
RG(ON) = 4.7
400
ns
250
ns
170
mJ
170
μC
tr
RG(OFF) = 4.7
Rise time
LS ~ 100nH
EON
Turn-on energy loss
Qrr
Diode reverse recovery charge
Irr
Diode reverse recovery current
VCE = 900V
270
A
Erec
Diode reverse recovery energy
dIF/dt = 2500A/μs
100
mJ
4/8
IF = 400A
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400DDM17-A000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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5 /8
DIM400DDM17-A000
6/8
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM400DDM17-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services.
All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
130±0.5
114 ±0.1
4 x M8
29.2 ±0.5
57 ±0.25
screwing depth
max 16
11.5 ±0.2
6 x M4
6 x Ø7
16 ±0.2 18 ±0.2
40 ±0.2
53 ±0.2
screwing depth
max 8
44 ±0.2
57 ±0.2
55.2 ±0.3
11.85 ±0.2
38
1(E)
5 ±0.2
+1.5
-0.0
14 ±0.2
35 ±0.2
140 ±0.5
124 ±0.25
30 ±0.2
5.25±0.3
57 ±0.25
2(C)
5(E)
12(C)
6(G)
11(G)
10(E)
7(C)
3(C)
Nominal Weight:
4(E)
900g
Module Outline Type Code:
D
Fig. 11 Module outline drawing
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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7 /8
DIM400DDM17-A000
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF, United Kingdom
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln
Lincolnshire, LN6 3LF, United Kingdom
Fax:
Tel:
Fax:
Tel:
+44(0)1522 500020
+44(0)1522 502901 / 502753
email:
[email protected]
+44(0)1522 500550
+44(0)1522 500500
 Dynex Semiconductor TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status.
The annotations are as follows:Target Information:
This is the most tentative form of information and represents a very preliminary specification.
No actual work on the product has been started.
Preliminary Information:
The product is in design and development.
The datasheet represents the product as it is understood but may change.
Advance Information:
The product design is complete and final characterisation for volume production is well in hand.
No Annotation:
The product parameters are fixed and the product is available to datasheet specification.
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contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee expressed or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
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8/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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