DCR2830C18

DCR2830C18
Phase Control Thyristor
DS6030-1 April 2011 (LN28241)
KEY PARAMETERS
FEATURES

Double Side Cooling

High Surge Capability
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
1800 V
2830 A
45000 A
1000 V/µs
200 A/µs
* Higher dV/dt selections available
APPLICATIONS

High Power Drives

High Voltage Power Supplies

Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
DCR2830C18
DCR2830C16
DCR2830C14
DCR2830C12
Repetitive Peak
Voltages
VDRM and VRRM
V
1800
1600
1400
1200
Conditions
Tvj = -40°C to 125°C,
IDRM = IRRM = 250mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM +100V
respectively
Lower voltage grades available.
Outline type code: C
(See Package Details for further information)
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
Fig. 1 Package outline
For example:
DCR2830C18
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR2830C18
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
2830
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
4440
A
Continuous (direct) on-state current
-
4000
A
IT
Half wave resistive load
SURGE RATINGS
Symbol
ITSM
2
It
Parameter
Surge (non-repetitive) on-state current
Test Conditions
Max.
Units
10ms half sine, Tcase = 125°C
45.0
kA
VR = 0
10.10
MA s
Min.
Max.
Units
2
I t for fusing
2
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Rth(j-c)
Thermal resistance – junction to case
Double side cooled
DC
-
0.0125
°C/W
Rth(c-h)
Thermal resistance – case to heatsink
Double side cooled
DC
-
0.004
°C/W
Tvj
Virtual junction temperature
Blocking VDRM / VRRM
-
125
°C
Tstg
Storage temperature range
-40
140
°C
Fm
Clamping force
40
50
kN
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DCR2830C18
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
IRRM/IDRM
Parameter
Test Conditions
Min.
Max.
Units
-
250
mA
1000
-
V/µs
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125°C, gate open
dI/dt
Rate of rise of on-state current
From 67% VDRM to 4000A
Repetitive 50Hz
-
200
A/µs
Gate source 30V, 10,
Non-repetitive
-
1000
A/µs
1.27
V
tr < 0.5µs, Tj = 125°C
VT
VT(TO)
rT
tgd
On-state voltage
IT = 3000A, Tcase = 125°C
Threshold voltage
Tcase = 125°C
-
0.91
V
On-state slope resistance
Tcase = 125°C
-
0.12
m
VD = 67% VDRM, gate source 30V, 10
-
3.0
µs
-
300
µs
IT = 4000A, tp = 1000us,Tj = 125°C,
dI/dt =10A/µs,
-
3000
µC
-
165
A
Delay time
tr = 0.5µs, Tj = 25°C
tq
Turn-off time
Tj = 125°C, VR = 100V, dI/dt = 10A/µs,
dVDR/dt = 20V/µs linear to 67% VDRM
QS
Stored charge
IRR
Reverse recovery current
IL
Latching current
Tj = 25°C,
-
1
A
IH
Holding current
Tj = 25°C,
-
200
mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
3
V
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25°C
VGD
Gate non-trigger voltage
At 40% VDRM, Tcase = 125°C
TBD
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25°C
300
mA
IGD
Gate non-trigger current
At 40% VDRM, Tcase = 125°C
TBD
mA
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DCR2830C18
SEMICONDUCTOR
CURVES
10000
Instantaneous on-state current, IT - (A)
9000
8000
7000
VTM EQUATION
6000
VTM = A + Bln (IT) + C.IT+D.IT
5000
4000
Where A = 0.8461895
B = -0.041135347
C = 0.0000348837
D = 0.01184
These values are valid for Tj = 125°C
3000
2000
Tj=25°C
1000
Tj=125°C
0
0.5
0.8
1.1
1.4
1.7
Instantaneous on-state voltage,VT - (V)
2
Fig.2 Maximum &minimum on-state characteristics
0.015
Double side cooled
t


i

Rthjc t    Rthi  1  e

i 1

Thermal Impedance Zth(j-c) (°C/W)
n
0.01
0.005




i
τi (s)
Rthi (°C/kW)
1
1.82
7.12
2
0.346
3.26
3
0.085
1.27
4
0.012
0.85
0
0.001
0.01
0.1
Time ( s )
1
10
100
Fig.3 Maximum (limit) transient thermal impedance – junction to case (°C/W)
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DCR2830C18
SEMICONDUCTOR
6000
130
120
Mean power dissipation - (W)
Maximum case temperature, Tcase - (°C)
110
5000
100
4000
3000
2000
180
120
90
60
30
1000
0
0
600
1200 1800 2400
Mean on-state current, IT(AV) - (A)
90
80
70
60
50
40
30
180
120
90
60
30
20
10
0
3000
0
Fig.4 On-state power dissipation – sine wave
600
1200
1800
2400
Mean on-state current, IT(AV) - (A)
3000
Fig.5 Maximum permissible case temperature,
double side cooled – sine wave
130
6000
120
Maximum case temperature, Tcase - (°C)
110
5000
Mean power dissipation - (W)
100
90
80
70
60
50
40
d.c.
180
120
90
60
30
30
20
10
0
4000
3000
2000
d.c.
180
120
90
60
30
1000
0
0
600
1200
1800
2400
Mean on-state current, IT(AV) - (A)
3000
Fig.6 Maximum permissible case temperature,
double side cooled – rectangular wave
0
600
1200
1800
2400
Mean on-state current, IT(AV) - (A)
3000
Fig.7 On-state power dissipation – rectangular wave
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DCR2830C18
SEMICONDUCTOR
50.0
Conditons:
Tcase=125°C
VR=0
Pulse width = 10ms
45.0
13.00
11.00
40.0
35.0
I2t (MA2s)
Surge current, ITSM - (KA)
Conditons:
Tcase=125°C
VR=0
half-sine wave
30.0
9.00
7.00
25.0
20.0
5.00
15.0
10.0
3.00
1
10
Number of cycles
100
1
Fig.9 Single-cycle I t
10000
900
Conditons:
Tj=125°C
IT=4000A
VR=0
Conditons:
Tj=125°C
IT=4000A
VR=0
800
Reverse recovery current, IRR - (A)
Stored charge, QS - (uC)
10
2
Fig.8 Multi-cycle surge current
8000
Pulse width, tp - (ms)
6000
4000
2000
700
600
500
400
300
200
100
0
1
10
Rate of decay of on-state current, di/dt - (A/us)
Fig.10 Stored charge vs di/dt
100
0
1
10
Rate of decay of on-state current, di/dt - (A/us)
100
Fig.11 Reverse recovery current vs di/dt
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DCR2830C18
SEMICONDUCTOR
4.50
4.00
Gate trigger voltage, VGT - (V)
3.50
Upper limit
3.00
2.50
2.00
1.50
1.00
Lower limit
0.50
Tj=-40°C
Tj=25°C
Tj=125°C
0.00
0
50
100
150
200
250
300
350
400
450
500
Gate trigger current IGT, - (mA)
Fig.12 Gate characteristics
12.0
PGM=20W
Gate trigger voltage, VGT - (V)
10.0
8.0
6.0
A
4.0
A is Recommended Triggering Area.
B is Unreliable Triggering Area.
C is Recommended Gate Load Line.
2.0
0.0
B
0.0
C
1.0
2.0
3.0
4.0
Gate trigger current IGT, - (A)
Fig.13 Gate characteristics
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DCR2830C18
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Package outline type code: C
Fig.14 Package outline
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DCR2830C18
SEMICONDUCTOR
IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute
any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of
the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements
are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical
errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the
most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property.
The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or
malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use
protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any
electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the
product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include
potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design
and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:Target Information:
Preliminary Information:
No Annotation:
This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
The product design is complete and final characterisation for volume production is in
progress.The datasheet represents the product as it is now understood but details may change.
The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
time of our order acknowledgement.
All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request.
Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their
respective owners.
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LIMITED
Doddington Road, Lincoln, Lincolnshire, LN6 3LF
United Kingdom.
Phone: +44 (0) 1522 500500
Fax:
+44 (0) 1522 500550
Web: http://www.dynexsemi.com
Phone: +44 (0) 1522 502753 / 502901
Fax:
+44 (0) 1522 500020
e-mail: [email protected]
 Dynex Semiconductor Ltd.
Technical Documentation – Not for resale.
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