IKW20N60H3 Data Sheet (2.1 MB, EN)

IGBT
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology
withsoft,fastrecoveryanti-paralleldiode
IKW20N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IKW20N60H3
Highspeedswitchingseriesthirdgeneration
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast
recoveryanti-paralleldiode
Features:
C
TRENCHSTOPTMtechnologyoffering
•verylowVCEsat
•lowEMI
•Verysoft,fastrecoveryanti-paralleldiode
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
Applications:
•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
G
C
E
KeyPerformanceandPackageParameters
Type
IKW20N60H3
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
600V
20A
1.95V
175°C
K20H603
PG-TO247-3
2
Rev.2.2,2014-03-12
IKW20N60H3
Highspeedswitchingseriesthirdgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.2.2,2014-03-12
IKW20N60H3
Highspeedswitchingseriesthirdgeneration
Maximumratings
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
600
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
40.0
20.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax
ICpuls
80.0
A
Turn off safe operating area
VCE≤600V,Tvj≤175°C,tp=1µs
-
80.0
A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF
20.0
10.0
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
80.0
A
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=150°C
tSC
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
170.0
85.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
µs
5
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
0.88
K/W
Diode thermal resistance,
junction - case
Rth(j-c)
1.89
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
4
Rev.2.2,2014-03-12
IKW20N60H3
Highspeedswitchingseriesthirdgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
600
-
-
VGE=15.0V,IC=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
1.95
2.30
2.50
2.40
-
-
1.65
1.67
1.65
2.05
-
4.1
5.1
5.7
Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA
Collector-emitter saturation voltage VCEsat
V
V
Diode forward voltage
VF
VGE=0V,IF=10.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
Gate-emitter threshold voltage
VGE(th)
IC=0.29mA,VCE=VGE
Zero gate voltage collector current
ICES
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=20.0A
-
10.9
-
S
V
V
40.0 µA
1500.0
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
1100
-
-
70
-
-
32
-
-
120.0
-
nC
-
13.0
-
nH
-
A
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: ≥ 1.0s
VCE=25V,VGE=0V,f=1MHz
VCC=480V,IC=20.0A,
VGE=15V
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=150°C
5
-
pF
120
Rev.2.2,2014-03-12
IKW20N60H3
Highspeedswitchingseriesthirdgeneration
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
17
-
ns
-
23
-
ns
-
194
-
ns
-
11
-
ns
-
0.56
-
mJ
-
0.24
-
mJ
-
0.80
-
mJ
-
112
-
ns
-
0.39
-
µC
-
11.0
-
A
-
-750
-
A/µs
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=25°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
rG=14.6Ω,Lσ=75nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=25°C,
VR=400V,
IF=10.0A,
diF/dt=1000A/µs
dirr/dt
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
16
-
ns
-
21
-
ns
-
227
-
ns
-
14
-
ns
-
0.71
-
mJ
-
0.36
-
mJ
-
1.07
-
mJ
-
191
-
ns
-
0.91
-
µC
-
14.2
-
A
-
-500
-
A/µs
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=175°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
rG=14.6Ω,Lσ=75nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=175°C,
VR=400V,
IF=10.0A,
diF/dt=1000A/µs
dirr/dt
6
Rev.2.2,2014-03-12
IKW20N60H3
Highspeedswitchingseriesthirdgeneration
60
100
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
50
40
30
TC=80°
TC=110°
20
TC=80°
TC=110°
tp=1µs
10
10µs
50µs
100µs
200µs
500µs
1
DC
10
0
1
10
100
0.1
1000
1
f,SWITCHINGFREQUENCY[kHz]
10
100
1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tj≤175°C,D=0.5,VCE=400V,VGE=15/0V,
rG=14,6Ω)
Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tj≤175°C;VGE=15V)
180
40
160
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]
140
120
100
80
60
40
30
20
10
20
0
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
25
50
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase
temperature
(Tj≤175°C)
Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tj≤175°C)
7
Rev.2.2,2014-03-12
IKW20N60H3
Highspeedswitchingseriesthirdgeneration
80
80
VGE=20V
70
VGE=20V
70
60
17V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
17V
15V
13V
50
11V
9V
40
7V
30
5V
20
10
0
60
15V
13V
50
11V
9V
40
7V
30
5V
20
10
0
2
4
0
6
0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tj=25°C)
6
8
4.0
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
Tj=25°C
Tj=175°C
60
IC,COLLECTORCURRENT[A]
4
Figure 6. Typicaloutputcharacteristic
(Tj=175°C)
70
50
40
30
20
10
0
2
VCE,COLLECTOR-EMITTERVOLTAGE[V]
5
6
7
8
9
10
11
IC=10A
IC=20A
IC=40A
3.5
3.0
2.5
2.0
1.5
1.0
12
VGE,GATE-EMITTERVOLTAGE[V]
0
25
50
75
100
125
150
175
Tj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic
(VCE=20V)
Figure 8. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
8
Rev.2.2,2014-03-12
IKW20N60H3
Highspeedswitchingseriesthirdgeneration
1000
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
td(off)
tf
td(on)
tr
100
10
1
4
8
12
16
20
24
28
32
36
100
10
40
5
10
IC,COLLECTORCURRENT[A]
15
20
25
30
35
40
45
50
rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=14,6Ω,testcircuitinFig.E)
Figure 10. Typicalswitchingtimesasafunctionofgate
resistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=20A,testcircuitinFig.E)
td(off)
tf
td(on)
tr
100
t,SWITCHINGTIMES[ns]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
6
10
1
0
25
50
75
100
125
150
typ.
min.
max.
5
4
3
2
175
Tj,JUNCTIONTEMPERATURE[°C]
0
25
50
75
100
125
150
175
Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof
junctiontemperature
(ind.load,VCE=400V,VGE=15/0V,IC=20A,
rG=14,6Ω,testcircuitinFig.E)
Figure 12. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.29mA)
9
Rev.2.2,2014-03-12
IKW20N60H3
Highspeedswitchingseriesthirdgeneration
3.0
2.00
Eoff
Eon
Ets
1.75
2.5
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
Eoff
Eon
Ets
2.0
1.5
1.0
0.5
1.50
1.25
1.00
0.75
0.50
0.25
0.0
4
8
12
16
20
24
28
32
36
0.00
40
5
10
15
IC,COLLECTORCURRENT[A]
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=14,6Ω,testcircuitinFig.E)
30
35
40
45
50
1.50
Eoff
Eon
Ets
E,SWITCHINGENERGYLOSSES[mJ]
Eoff
Eon
Ets
E,SWITCHINGENERGYLOSSES[mJ]
25
Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=20A,testcircuitinFig.E)
1.25
1.00
0.75
0.50
0.25
0.00
20
rG,GATERESISTOR[Ω]
0
25
50
75
100
125
150
1.25
1.00
0.75
0.50
0.25
0.00
200
175
Tj,JUNCTIONTEMPERATURE[°C]
250
300
350
400
450
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(indload,VCE=400V,VGE=15/0V,IC=20A,
rG=14,6Ω,testcircuitinFig.E)
Figure 16. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(ind.load,Tj=175°C,VGE=15/0V,IC=20A,
rG=14,6Ω,testcircuitinFig.E)
10
Rev.2.2,2014-03-12
IKW20N60H3
Highspeedswitchingseriesthirdgeneration
16
120V
480V
14
12
C,CAPACITANCE[pF]
VGE,GATE-EMITTERVOLTAGE[V]
1000
10
8
6
Cies
Coes
Cres
100
4
2
0
0
20
40
60
80
100
120
10
140
0
QGE,GATECHARGE[nC]
Figure 17. Typicalgatecharge
(IC=20A)
30
15
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
20
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
300
250
200
150
100
50
10
VCE,COLLECTOR-EMITTERVOLTAGE[V]
10
12
14
16
18
12
9
6
3
0
20
VGE,GATE-EMITTERVOLTAGE[V]
10
11
12
13
14
15
VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,startatTj=25°C)
Figure 20. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤400V,startatTj≤150°C)
11
Rev.2.2,2014-03-12
IKW20N60H3
Highspeedswitchingseriesthirdgeneration
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
1
D=0.5
0.2
0.1
0.05
0.1
0.02
0.01
single pulse
0.01
i:
1
2
3
4
ri[K/W]: 0.07041042 0.3070851 0.3198984 0.1871538
τi[s]:
9.6E-5
6.8E-4
0.01084623 0.06925485
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
i:
1
2
3
4
ri[K/W]: 0.4398 0.6662 0.4734 0.3169
τi[s]:
1.3E-4 1.1E-3 7.1E-3 0.04629
0.001
1E-7
1
1E-6
tp,PULSEWIDTH[s]
1E-5
1E-4
0.001
0.01
0.1
1
tp,PULSEWIDTH[s]
Figure 21. IGBTtransientthermalimpedance
(D=tp/T)
Figure 22. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
250
1.00
Qrr,REVERSERECOVERYCHARGE[µC]
trr,REVERSERECOVERYTIME[ns]
Tj=25°C, IF = 20A
Tj=175°C, IF = 20A
200
150
100
50
600
800
1000
1200
1400
1600
diF/dt,DIODECURRENTSLOPE[A/µs]
0.75
Tj=25°C, IF = 20A
Tj=175°C, IF = 20A
0.50
0.25
0.00
800
900
1000 1100 1200 1300 1400 1500 1600
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
12
Figure 24. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
Rev.2.2,2014-03-12
IKW20N60H3
Highspeedswitchingseriesthirdgeneration
18
0
Tj=25°C, IF = 20A
Tj=175°C, IF = 20A
-200
16
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
Irr,REVERSERECOVERYCURRENT[A]
Tj=25°C, IF = 20A
Tj=175°C, IF = 20A
14
12
10
-400
-600
-800
-1000
8
-1200
6
800
900
-1400
800
1000 1100 1200 1300 1400 1500 1600
diF/dt,DIODECURRENTSLOPE[A/µs]
900
1000 1100 1200 1300 1400 1500 1600
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 25. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
Figure 26. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
40
2.50
Tj=25°C
Tj=175°C
IF=5A
IF=10A
IF=20A
35
30
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
2.25
25
20
15
10
2.00
1.75
1.50
1.25
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1.00
3.5
VF,FORWARDVOLTAGE[V]
0
25
50
75
100
125
150
175
Tj,JUNCTIONTEMPERATURE[°C]
Figure 27. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
13
Figure 28. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
Rev.2.2,2014-03-12
IKW20N60H3
Highspeedswitchingseriesthirdgeneration
PG-TO247-3
14
Rev.2.2,2014-03-12
IKW20N60H3
Highspeedswitchingseriesthirdgeneration
vGE(t)
90% VGE
a
a
b
b
t
iC(t)
90% IC
90% IC
10% IC
10% IC
t
vCE(t)
t
td(off)
tf
td(on)
t
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
2% IC
t
vCE(t)
2% VCE
t1
t2
t3
t4
t
15
Rev.2.2,2014-03-12
IKW20N60H3
Highspeedswitchingseriesthirdgeneration
RevisionHistory
IKW20N60H3
Revision:2014-03-12,Rev.2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2010-02-01
-
1.2
2010-07-26
Preliminary datasheet
2.1
2013-12-09
New value for IRmax limit at 175°C
2.2
2014-03-12
Max ratings Vce, Tvj ≥ 25°C
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?
Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument.
Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected]
Publishedby
InfineonTechnologiesAG
81726Munich,Germany
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.
Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe
applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,
includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin
question,pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems
and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon
Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,
automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life
supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain
and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe
endangered.
16
Rev.2.2,2014-03-12