IKW40N65H5 Data Sheet (2.5 MB, EN)

IGBT
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKP40N65H5,IKW40N65H5
650VDuoPackIGBTanddiode
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
FeaturesandBenefits:
C
HighspeedH5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowgatechargeQG
•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
1
2
3
Applications:
•Solarconverters
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
Packagepindefinition:
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
KeyPerformanceandPackageParameters
Type
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
IKP40N65H5
650V
40A
1.65V
175°C
K40EH5
PG-TO220-3
IKW40N65H5
650V
40A
1.65V
175°C
K40EH5
PG-TO247-3
2
Rev.2.1,2015-05-06
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing PG-TO220-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Package Drawing PG-TO247-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
3
Rev.2.1,2015-05-06
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
650
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
74.0
46.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax
ICpuls
120.0
A
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs
-
120.0
A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF
36.0
21.0
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
120.0
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
VGE
±20
±30
V
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
250.0
125.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
PG-TO220-3
PG-TO247-3
260
260
°C
M
0.6
Nm
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
0.60
K/W
Diode thermal resistance,
junction - case
Rth(j-c)
1.80
K/W
Thermal resistance
junction - ambient
Rth(j-a)
62
40
K/W
PG-TO220-3
PG-TO247-3
4
Rev.2.1,2015-05-06
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
650
-
-
VGE=15.0V,IC=40.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
1.65
1.85
1.95
2.10
-
-
1.45
1.40
1.40
1.80
-
3.2
4.0
4.8
Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA
Collector-emitter saturation voltage VCEsat
V
V
Diode forward voltage
VF
VGE=0V,IF=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
Gate-emitter threshold voltage
VGE(th)
IC=0.40mA,VCE=VGE
Zero gate voltage collector current
ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=40.0A
-
50.0
-
S
V
V
40.0 µA
4000.0
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
2500
-
-
50
-
-
9
-
Unit
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
VCC=520V,IC=40.0A,
VGE=15V
-
95.0
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
PG-TO220-3
PG-TO247-3
-
7.0
13.0
-
nH
VCE=25V,VGE=0V,f=1MHz
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
22
-
ns
-
12
-
ns
-
165
-
ns
-
13
-
ns
-
0.39
-
mJ
-
0.12
-
mJ
-
0.51
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
RG(on)=15.0Ω,RG(off)=15.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
5
Rev.2.1,2015-05-06
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=5.0A,
VGE=0.0/15.0V,
RG(on)=15.0Ω,RG(off)=15.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
-
19
-
ns
-
4
-
ns
-
190
-
ns
-
24
-
ns
-
0.09
-
mJ
-
0.05
-
mJ
-
0.14
-
mJ
-
62
-
ns
-
0.45
-
µC
-
12.5
-
A
-
-290
-
A/µs
-
30
-
ns
-
0.22
-
µC
-
10.7
-
A
-
-700
-
A/µs
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=25°C,
VR=400V,
IF=20.0A,
diF/dt=1000A/µs
Tvj=25°C,
VR=400V,
IF=5.0A,
diF/dt=1000A/µs
dirr/dt
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
20
-
ns
-
12
-
ns
-
195
-
ns
-
22
-
ns
-
0.54
-
mJ
-
0.22
-
mJ
-
0.76
-
mJ
-
19
-
ns
-
5
-
ns
-
240
-
ns
-
33
-
ns
-
0.15
-
mJ
-
0.07
-
mJ
-
0.22
-
mJ
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=150°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
RG(on)=15.0Ω,RG(off)=15.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=150°C,
VCC=400V,IC=5.0A,
VGE=0.0/15.0V,
RG(on)=15.0Ω,RG(off)=15.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
6
Rev.2.1,2015-05-06
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=150°C,
VR=400V,
IF=20.0A,
diF/dt=1000A/µs
Tvj=150°C,
VR=400V,
IF=5.0A,
diF/dt=1000A/µs
dirr/dt
7
-
90
-
ns
-
1.00
-
µC
-
17.5
-
A
-
-220
-
A/µs
-
52
-
ns
-
0.49
-
µC
-
15.0
-
A
-
-430
-
A/µs
Rev.2.1,2015-05-06
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
275
250
100
10
Ptot,POWERDISSIPATION[W]
IC,COLLECTORCURRENT[A]
225
tp=1µs
10µs
50µs
100µs
1
200µs
200
175
150
125
100
75
500µs
50
DC
25
0.1
1
10
100
0
1000
25
VCE,COLLECTOR-EMITTERVOLTAGE[V]
50
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V.
RecommendeduseatVGE≥7.5V)
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
80
120
70
VGE=20V
60
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
100
50
40
30
20
18V
80
15V
12V
60
10V
8V
7V
40
6V
5V
20
10
0
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
0
1
2
3
4
5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
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Rev.2.1,2015-05-06
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
120
120
Tj=25°C
Tj=150°C
100
100
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
VGE=20V
18V
80
15V
12V
60
10V
8V
7V
40
6V
80
60
40
5V
20
0
20
0
1
2
3
4
0
5
4.5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
5.5
6.0
6.5
7.0
7.5
8.0
8.5
VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=150°C)
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
2.50
1000
IC=10A
IC=20A
IC=40A
2.25
td(off)
tf
td(on)
tr
2.00
t,SWITCHINGTIMES[ns]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
5.0
1.75
1.50
1.25
100
10
1.00
0.75
0.50
0
25
50
75
100
125
150
1
175
Tvj,JUNCTIONTEMPERATURE[°C]
0
20
40
60
80
100
120
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=15Ω,Dynamictestcircuitin
Figure E)
9
Rev.2.1,2015-05-06
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
1000
1000
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
td(off)
tf
td(on)
tr
100
10
1
5
15
25
35
45
55
65
75
100
10
1
85
25
rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=20A,Dynamictestcircuitin
Figure E)
100
125
150
175
8
typ.
min.
max.
5.0
Eoff
Eon
Ets
7
E,SWITCHINGENERGYLOSSES[mJ]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
75
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=20A,rG=15Ω,Dynamictestcircuitin
Figure E)
5.5
4.5
4.0
3.5
3.0
2.5
2.0
6
5
4
3
2
1
1.5
1.0
50
Tvj,JUNCTIONTEMPERATURE[°C]
0
25
50
75
100
125
0
150
Tvj,JUNCTIONTEMPERATURE[°C]
0
20
40
60
80
100
120
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.4mA)
10
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=15Ω,Dynamictestcircuitin
Figure E)
Rev.2.1,2015-05-06
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
1.6
0.8
Eoff
Eon
Ets
0.7
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Eoff
Eon
Ets
0.6
0.5
0.4
0.3
0.2
0.1
5
15
25
35
45
55
65
75
0.0
85
25
rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=20A,Dynamictestcircuitin
Figure E)
125
150
175
130V
520V
14
VGE,GATE-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
100
16
Eoff
Eon
Ets
0.8
0.7
0.6
0.5
0.4
0.3
0.2
12
10
8
6
4
2
0.1
0.0
200
75
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=20A,rG=15Ω,Dynamictestcircuitin
Figure E)
1.0
0.9
50
Tvj,JUNCTIONTEMPERATURE[°C]
250
300
350
400
450
0
500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=20A,rG=15Ω,Dynamictestcircuitin
Figure E)
0
20
40
60
80
100
QGE,GATECHARGE[nC]
Figure 16. Typicalgatecharge
(IC=40A)
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Rev.2.1,2015-05-06
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
1E+4
1
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
Cies
Coes
Cres
C,CAPACITANCE[pF]
1000
100
10
1
0
5
10
15
20
25
D=0.5
0.2
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
ri[K/W]: 0.08245484 0.144197 0.2151774 0.1581708
τi[s]:
7.3E-5
7.0E-4
0.01235548 0.08020881
0.001
1E-6
30
0.1
0.1
1E-5
VCE,COLLECTOR-EMITTERVOLTAGE[V]
1E-4
0.001
0.01
0.1
1
tp,PULSEWIDTH[s]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
Figure 18. IGBTtransientthermalresistance
(D=tp/T)
1
D=0.5
0.2
0.1
0.05
0.1
0.02
0.01
single pulse
0.01
1E-6
1E-5
1E-4
0.001
0.01
0.1
110
100
90
80
70
60
50
i:
1
2
3
ri[K/W]: 0.6701584 0.775759 0.3540826
τi[s]:
3.4E-4
4.7E-3
0.04680901
0.001
1E-7
Tj=25°C, IF = 20A
Tj=150°C, IF = 20A
120
trr,REVERSERECOVERYTIME[ns]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
130
40
500
1
tp,PULSEWIDTH[s]
700
900
1100
1300
1500
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
Figure 20. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
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Rev.2.1,2015-05-06
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
1.2
20
Tj=25°C, IF = 20A
Tj=150°C, IF = 20A
Tj=25°C, IF = 20A
Tj=150°C, IF = 20A
19
Irr,REVERSERECOVERYCURRENT[A]
Qrr,REVERSERECOVERYCHARGE[µC]
18
1.0
0.8
0.6
0.4
17
16
15
14
13
12
11
10
9
8
7
6
0.2
500
700
900
1100
1300
5
500
1500
700
900
1100
1300
diF/dt,DIODECURRENTSLOPE[A/µs]
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 21. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
Figure 22. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
0
1500
60
Tj=25°C, IF = 20A
Tj=150°C, IF = 20A
Tj=25°C
Tj=150°C
-50
-100
IF,FORWARDCURRENT[A]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
50
-150
-200
-250
-300
40
30
20
10
-350
-400
500
700
900
1100
1300
1500
diF/dt,DIODECURRENTSLOPE[A/µs]
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VF,FORWARDVOLTAGE[V]
Figure 23. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
Figure 24. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
13
Rev.2.1,2015-05-06
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
2.0
IF=10A
IF=20A
IF=40A
VF,FORWARDVOLTAGE[V]
1.8
1.6
1.4
1.2
1.0
0.8
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 25. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
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Rev.2.1,2015-05-06
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
Package Drawing PG-TO220-3
15
Rev.2.1,2015-05-06
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
Package Drawing PG-TO247-3
16
Rev.2.1,2015-05-06
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
Testing Conditions
VGE(t)
I,V
90% VGE
t rr = t a + t b
Q rr = Q a + Q b
dIF/dt
a
10% VGE
b
t
Qa
IC(t)
Qb
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
(only for ZVT switching)
VCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
on
=
VCE x IC x d t
2% VCE
t3
t2
t3
t4
t
Figure B.
17
Rev.2.1,2015-05-06
IKP40N65H5,IKW40N65H5
Highspeedswitchingseriesfifthgeneration
RevisionHistory
IKP40N65H5, IKW40N65H5
Revision:2015-05-06,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2012-11-09
Preliminary data sheet
1.2
2013-12-18
New Marking Pattern
1.3
2014-12-04
Minor changes Fig.1, Fig.14 and typ. Eoff at 150°C = 0.22mJ
2.1
2015-05-06
Final data sheet
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18
Rev.2.1,2015-05-06