NEW PRODUCT NEW PRODUCT NEW PRODUCT BAS16D, BAS16WS SMALL SIGNAL DIODES .022 (0.55) SOD-123 (BAS16D) .112 (2.85) .100 (2.55) ♦ Fast switching diode. ♦ Also available in case SOT-23 with designation BAS16. max. .053 (1.35) .067 (1.70) .055 (1.40) max. .006 (0.15) Top View max. .004 (0.1) .152 (3.85) .140 (3.55) Cathode Mark MECHANICAL DATA BAS16D Case: SOD-123 Plastic Case Weight: approx. 0.01 g Marking Code: A6 min. .010 (0.25) .012 (0.3) Cathode Mark .112 (2.85) .100 (2.55) .076 (1.95) .065 (1.65) FEATURES ♦ Silicon Epitaxial Planar Diode SOD-323 (BAS16WS) BAS16WS Case: SOD-323 Plastic Case Weight: approx. 0.004 g Marking Code: A6 max. .049 (1.25) max. .004 (0.1) .059 (1.5) .043 (1.1) max. .006 (0.15) Top View min. .010 (0.25) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Reverse Voltage Peak Reverse Voltage Forward Current (continuous) Non-Repetitive Peak Forward Current at t = 1µs at t = 1ms at t = 1s Power Dissipation at Tamb = 25 °C BAS16D BAS16WS Maxium Junction Temperature Storage Temperature Range 1)Valid provided electrodes are kept at ambient temperture. 10/21/98 SYMBOL VALUE UNIT VR VRM IF 75 100 250 V V mA IFSM IFSM IFSM 2.0 1.0 0.5 3501) 2001) 150 – 65 to +1501) A A A mW mW Ptot Tj TS °C °C BAS16D, BAS16W ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF VF VF VF – – – – – – – – 715 855 1.00 1.25 mV mV V V Leakage Current at VR = 25 V, Tj = 150 °C at VR = 75 V at VR = 75 V, Tj = 150 °C IR IR IR – – – – – – 30 1 50 µA µA µA Ctot – – 2 pF trr – – 6 ns RthJA – – Capacitance at VR = 0; f = 1 MHz Reverse Recovery Time from IF = 10 mA to IR = 10 mA IR = 1 mA, RL = 100Ω Thermal Resistance Junction to Ambient Air 1)Valid BAS16D BAS16WS provided that electrodes are kept at ambient temperature 3751) 6501) °C/W °C/W